NSR05T30P2T5G

## NSR05T30P2 

## 500 mA, 30 V Schottky Barrier Diode 

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in spacing saving micro−packaging ideal for space constraint applications. 

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## **Features** 

- Low Forward Voltage Drop − 450 mV (Typ.) @ IF = 500 mA 

 **MARKING** 2 • Low Reverse Current − 40 A (Typ.) @ VR = 30 V **DIAGRAM** • 500 mA of Continuous Forward Current 1 • ESD Rating: − Human Body Model: Class 3B YNM **SOD−923** − Charged Device Model: Class IV **CASE 514AB** • High Switching Speed ~~Of~~ • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS YN = Specific Device Code M = Date Code Compliant **Typical Applications** • LCD and Keypad Backlighting ~~WELe)~~ 1 2 • Camera Photo Flash CATHODE ANODE AN “<) • Buck and Boost dc−dc Converters • Reverse Voltage and Current Protection We ~~8 ae~~ • Clamping & Protection O ~~St~~ **ORDERING INFORMATION** KA PO ~~s~~ **MAXIMUM RATINGS Device Package Shipping** Ore **Rating Symbol Value Unit** NSR05T30P2T5G SOD−923 2 mm Pitch (Pb−Free) Reverse Voltage VR 30 V ~~a~~ Forward Current (DC) ~~& } ECON EAA~~ IF 500 mA †For information on tape and reel specifications,including part orientation and tape sizes, pleaseincluding part orientation and tape sizes, please ~~| CUD KC cm~~ Forward Surge Current IFSM 2.5 A refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (60 Hz @ 1 cycle) ~~pe~~ Repetitive Peak Forward Current ~~Seger~~ IFRM ~~Te~~ 1 A (Pulse Wave = 1 sec, Duty Cycle = 66%) ~~pwr~~ ESD Rating: Human Body Model ~~S|~~ ESD ~~|~~ > 8 kV Charged Device Model > 1 ~~a~~ 

|**Device**<br>~~s~~|**Package**|**Shipping**†|
|---|---|---|
|NSR05T30P2T5G|SOD−923<br>(Pb−Free)|2 mm Pitch<br>8000/Tape & Reel|



†For information on tape and reel specifications,including part orientation and tape sizes, pleaseincluding part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

Publication Order Number: **NSR05T30P2/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **May, 2024 − Rev. 1** 

**NSR05T30P2** 

## **THERMAL CHARACTERISTICS** 

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Characteristic Symbol Min Typ Max Unit<br>Thermal Resistance<br>Junction−to−Ambient (Note 1) R � JA 345 ° C/W<br>Total Power Dissipation @ TA = 25 ° C PD 360 mW<br>Thermal Resistance<br>Junction−to−Ambient (Note 2) R � JA 175 ° C/W<br>Total Power Dissipation @ TA = 25 ° C PD 715 mW<br>Junction and Storage Temperature Range TJ, Tstg −55 to +150 ° C<br>1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.<br>2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.<br>1000<br>D = 0.5<br>100 0.2<br>0.1<br>0.05<br>0.02<br>10<br>0.01<br>SINGLE PULSE<br>1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (sec)<br>Figure 1. Thermal Response (Note 1)<br>1000<br>D = 0.5<br>100<br>0.2<br>0.1<br>0.05<br>10<br>0.02<br>0.01<br>SINGLE PULSE<br>1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (sec)<br>R(t) (C/W)<br>R(t) (C/W)<br>**----- End of picture text -----**<br>


**Figure 2. Thermal Response (Note 2)** 

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**2** 

**NSR05T30P2** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Leakage<br>(VR= 10 V)<br>(VR= 30 V)|IR||15<br>40|26<br>85|�A|
|Forward Voltage<br>(IF= 10 mA)<br>(IF= 100 mA)<br>(IF= 200 mA)<br>(IF= 500 mA)|VF||225<br>310<br>350<br>450|255<br>335<br>385<br>485|mV|
|Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)|CT||33||pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR(REC)= 1.0 mA, Figure 3)|trr||9||ns|
|Peak Forward Recovery Voltage<br>(IF= 100 mA, tr= 20 ns, Figure 4)|VFRM||460||mV|
|Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product<br>performance may not be indicated by the Electrical Characteristics if operated under different conditions.||||||



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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>Notes: 1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>Figure 3. Recovery Time Equivalent Test Circuit<br>IF tr VF<br>VFRM<br>VF<br>Time Time<br>**----- End of picture text -----**<br>


**Figure 4. Peak Forward Recovery Voltage Definition** 

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**3** 

**NSR05T30P2** 

## **TYPICAL CHARACTERISTICS** 

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1000 100<br>150 ° C<br>150 ° C 10 125 ° C<br>100 ° C<br>100 125 ° C 1<br>85 ° C<br>100 ° C 0.1 25 ° C<br>10<br>85 ° C 0.01<br>−25 ° C<br>25 ° C 0.001<br>1 −55 ° C<br>−25 ° C<br>0.0001<br>−55 ° C<br>0.1 0.00001<br>0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 5. Forward Voltage Figure 6. Leakage Current<br>1000 1000<br>1.0<br>100 1.0<br>100<br>10 0.1<br>0.2 0.5 0.8<br>1 10 0.2 0.5 0.8<br>0.1<br>0.1<br>1<br>0.01<br>0.001 0.1<br>0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30<br>IF, FORWARD CURRENT (mA) VR, REVERSE VOLTAGE (V)<br>Figure 7. Average Forward Power Dissipation Figure 8. Average Reverse Power Dissipation<br>50 9<br>Based on square wave currents<br>45 f = 1.0 MHz 8 TJ = 25 ° C prior to surge<br>40<br>7<br>35<br>6<br>30<br>5<br>25<br>4<br>20<br>3<br>15<br>10 2<br>5 1<br>0 0<br>0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000<br>VR, REVERSE VOLTAGE (V) tP, PULSE ON TIME (ms)<br>, FORWARD CURRENT (mA)IF , REVERSE CURRENT (mA)IR<br>W)<br>( �<br>, AVERAGE REVERSE POWER<br>R<br>, AVERAGE FORWARD POWER (mW) P<br>F<br>P<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSM<br>**----- End of picture text -----**<br>


**Figure 9. Total Capacitance** 

**Figure 10. Forward Surge Current** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **SOD−923 0.80x0.60x0.37** 

CASE 514AB ISSUE E 

## DATE  08 FEB 2024 

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GENERIC<br>MARKING DIAGRAM*<br>X M | X M<br>STYLE 1 STYLE 2<br>X = Specific Device Code<br>M = Date Code<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE 

## **DOCUMENT NUMBER:** 

## **98AON23284D DESCRIPTION: SOD−923 0.80x0.60x0.37** 

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