NSR0530HT1G

## NSR0530H 

## _Product Preview_ Schottky Barrier Diode 

Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0530H in a SOD−323 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 

## **Features** 

## **www.onsemi.com** 

## **30 V SCHOTTKY BARRIER DIODE** 

- Very Low Forward Voltage Drop − 370 mV @ 100 mA 

- Low Reverse Current − 1.4 A @ 10 V VR 

- 500 mA of Continuous Forward Current 

- Very High Switching Speed 

1 2 CATHODE ANODE 

- Low Capacitance − CT = 10 pF 

- This is a Pb−Free Device 

## **Typical Applications** 

- LCD and Keypad Backlighting 

- Camera Photo Flash 

- Buck and Boost dc−dc Converters 

- Reverse Voltage and Current Protection 

- Clamping & Protection 

## **Markets** 

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2 MARKING<br>DIAGRAM<br>1<br>SOD−323 AK M<br>CASE 477<br>STYLE 1<br>— | i<br>AK = Specific Device Code<br>M = Month Code<br>**----- End of picture text -----**<br>


- Mobile Handsets 

- MP3 Players 

- Digital Camera and Camcorders 

- Notebook PCs & PDAs 

- GPS 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|30|V|
|Forward Current (DC)|IF|500|mA|
|Forward Surge Current<br>(60 Hz @ 1 cycle)|IFSM|2.5|A|
|ESD Rating:<br>Human Body Model<br>Machine Model|ESD|Class 3B<br>Class C||



## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NSR0530HT1G|SOD−323<br>(Pb−Free)|3000/Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. 

Publication Order Number: **NSR0530H/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **June, 2016 − Rev. P2** 

**NSR0530H** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Thermal Resistance<br>Junction−to−Ambient (Note 1)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|||740<br>160|°C/W<br>mW|
|Thermal Resistance<br>Junction−to−Ambient (Note 2)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|||460<br>270|°C/W<br>mW|
|Junction and Storage Temperature Range|TJ, Tstg|||−55 to +150|°C|



1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

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Characteristic Symbol Min Typ Max Unit<br>Reverse Leakage IR � A<br>(VR = 10 V) 1.4 10<br>(VR = 30 V) 24 200<br>Forward Voltage (IF = 10 mA) VF 0.28 0.37 V<br>(IF = 100 mA) 0.37 0.46<br>(IF = 500 mA) 0.52 0.62<br>Total Capacitance CT 10 pF<br>(VR = 1.0 V, f = 1 MHz)<br>10,000 1,000,000<br>100,000<br>1000<br>10,000 125 ° C<br>100 85 ° C<br>1000<br>10 100 25 ° C<br>125 ° C<br>1 10<br>−40 ° C<br>1<br>0.1<br>85 ° C 0.1<br>0.01<br>0.01<br>25 ° C −40 ° C<br>0.001 0.001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 35<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>, REVERSE CURRENT (Ir<br>, FORWARD CURRENT (mA)<br>IF<br>**----- End of picture text -----**<br>


**Figure 1. Forward Voltage** 

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20<br>18 TA = 25 ° C<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35<br>VR, REVERSE VOLTAGE (V)<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 3. Total Capacitance** 

**Figure 2. Leakage Current** 

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4.5<br>Based on square wave currents<br>4 TJ = 25 ° C prior to surge<br>3.5<br>3<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>0.001 0.01 0.1 1 10 100 1000<br>TP, PULSE ON TIME (ms)<br>, FORWARD SURGE CURRENT (A)<br>IFSM<br>**----- End of picture text -----**<br>


**Figure 4. Forward Surge Current** 

**www.onsemi.com** 

**2** 

**NSR0530H** 

## **PACKAGE DIMENSIONS** 

**SOD−323** CASE 477−02 ISSUE H 

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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>HE 2. CONTROLLING DIMENSION: MILLIMETERS.<br>D 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING<br>WITH SOLDER PLATING.<br>4. DIMENSIONS A AND B DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>at, 5. DIMENSION L IS MEASURED FROM END OF RADIUS.<br>b 1 2 E<br>MILLIMETERS INCHES<br>= DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>A3 b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>A E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>C if NOTE 5L A1 C O, 4<br>NOTE 3 SOLDERING FOOTPRINT*<br>**----- End of picture text -----**<br>


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0.63<br>0.025 — > —<br>0.83<br>0.033<br>1.60<br>Us<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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## **LITERATURE FULFILLMENT** : 

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**NSR0530H/D** 

**3**