NSR0520V2T1G

## NSR0520V2, NSVR0520V2 

## Schottky Barrier Diode 

Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0520V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 

## **Features** 

- Very Low Forward Voltage Drop − 325 mV @ 100 mA 

## **http://onsemi.com** 

**20 VOLT SCHOTTKY BARRIER DIODE** 

- Low Reverse Current − 8.0 A @ 10 V 

- Continuous Forward Current − 500 mA 

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• Power Dissipation with Minimum Trace − 170 mW 1 2<br>• Very High Switching Speed − 12 ns @ 10 mA CATHODE ANODE<br>• Low Capacitance − 35 pF @ 1.0 V<br>• NSV Prefix for Automotive and Other Applications Requiring 2<br>Unique Site and Control Change Requirements; AEC−Q101<br>°<br>Qualified and PPAP Capable 1<br>• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS SOD−523<br>Compliant CASE 502<br>STYLE 1<br>**----- End of picture text -----**<br>


## **Typical Applications** 

- LCD and Keypad Backlighting 

- Camera Photo Flash 

- Buck and Boost dc−dc Converters 

- Reverse Voltage and Current Protection 

- Clamping and Protection 

## **Markets** 

- Mobile Handsets 

- MP3 Players 

- Digital Camera and Camcorders 

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MARKING DIAGRAM<br>AA M<br>1 2<br>{I<br>AA = Device Code<br>M = Date Code*<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation position may vary depending<br>upon manufacturing location.<br>**----- End of picture text -----**<br>


- Notebook PCs & PDAs 

- GPS 

## **ORDERING INFORMATION** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|20|Vdc|
|Forward Continuous Current (DC)|IF|500|mA|
|Non−Repetitive Peak Forward Surge Current|IFSM|2.0|A|
|Repetitive Peak Forward Current<br>(Pulse Wave = 1 sec, Duty Cycle = 66%)|IFRM|1.5|A|
|ESD Rating: Human Body Model<br>Machine Model|ESD|Class 3B<br>Class C||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NSR0520V2T1G|SOD−523<br>(Pb−Free)|3000/Tape & Reel|
|NSVR0520V2T1G|SOD−523<br>(Pb−Free)|3000/Tape & Reel|
|NSR0520V2T5G|SOD−523<br>(Pb−Free)|8000/Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **NSR0520V2T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **October, 2014 − Rev. 4** 

**NSR0520V2, NSVR0520V2** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance<br>Junction−to−Ambient (Note 1)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|600<br>170|°C/W<br>mW|
|Thermal Resistance<br>Junction−to−Ambient (Note 2)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|300<br>340|°C/W<br>mW|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to +125|°C|



1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Leakage<br>(VR= 10 V)<br>(VR= 20 V)|IR||8.0<br>75|30|�A|
|Forward Voltage<br>(IF= 10 mA)<br>(IF= 100 mA)<br>(IF= 500 mA)|VF||255<br>325<br>410|320<br>390<br>480|mV|
|Total Capacitance<br>(VR= 1.0 V, f = 1 MHz)|CT||35||pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR= 1.0 mA)|trr||12.0||ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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DC Current<br>Source<br>+ − tr t p<br>0.1  � F 0 V<br>10%<br>750  � H IF VR 90%<br>50  �  Output 0.1  � F Pulse Generator<br>Pulse Output<br>Generator IF<br>Adjust for IRM DUT t rr<br>RL = 50  �<br>iR(REC) = 1 mA<br>Current IRM<br>Transformer Output Pulse<br>(IF = IRM = 10 mA; measured<br>at iR(REC) = 1 mA)<br>50  �  Input<br>Oscilloscope<br>1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.<br>2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.<br>3. Pulse Generator transition time << trr.<br>4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.<br>5. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

**http://onsemi.com** 

**2** 

**NSR0520V2, NSVR0520V2** 

## **TYPICAL CHARACTERISTICS** 

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1000 100000<br>10000 125 ° C<br>1000<br>100<br>100 85 ° C<br>125 ° C<br>10<br>10 25 ° C<br>1<br>85 ° C 25 ° C −40 ° C 0.1<br>1<br>0.01 −40 ° C<br>0.001<br>0.1 0.0001<br>0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 2 4 6 8 10 12 14 16 18 20<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>, REVERSE CURRENT (<br>, FORWARD CURRENT (mA)IF IR<br>**----- End of picture text -----**<br>


**Figure 2.** 

**Figure 3.** 

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60<br>55<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>0 2 4 6 8 10 12 14 16 18 20<br>VR, REVERSE VOLTAGE (V)<br>, TOTAL CAPACITANCE (pF)Ct<br>**----- End of picture text -----**<br>


**Figure 4.** 

**http://onsemi.com** 

**3** 

**NSR0520V2, NSVR0520V2** 

## **PACKAGE DIMENSIONS** 

**SOD−523** CASE 502 

ISSUE E 

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−X−<br>D NOTES:<br>−Y− 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>— — 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>E MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>BASE MATERIAL.<br>1 2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-<br>2X b TRUSIONS, OR GATE BURRS.<br>0.08 M X Y MILLIMETERS<br>DIM MIN NOM MAX<br>TOP VIEW A 0.50 0.60 0.70<br>b 0.25 0.30 0.35<br>c 0.07 0.14 0.20<br>D 1.10 1.20 1.30<br>E 0.70 0.80 0.90<br>A H E 1.50 1.60 1.70<br>L 0.30 REF<br>TE = L2 0.15 0.20 0.25<br>id ob<br>c JL HE J RECOMMENDED<br>SOLDERING FOOTPRINT*<br>SIDE VIEW<br>2X 1.80<br>0.48 2X<br>2X L 0.40<br>PACKAGE<br>OUTLINE oo DIMENSION: MILLIMETERS<br>2X L2 ate RS<br>*For additional information on our Pb−Free strategy and soldering<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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## **LITERATURE FULFILLMENT** : 

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**http://onsemi.com** 

**NSR0520V2T1/D** 

**4**