NSR0340V2T1G

NSR0340V2 

## Schottky Barrier Diode 

Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 

## **Features** 

- Very Low Forward Voltage Drop − 410 mV @ 100 mA 

- Low Reverse Current − 0.5 A @ 25 V VR 

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## **40 VOLT SCHOTTKY BARRIER DIODE** 

- 250 mA of Continuous Forward Current 

- Power Dissipation of 200 mW with Minimum Trace 

- Very High Switching Speed 

1 2 • Low Capacitance − CT = 6 pF CATHODE ANODE • This is a Pb−Free Device **Typical Applications** 2 • LCD and Keypad Backlighting 1 • Camera Photo Flash **SOD−523** • Buck and Boost dc−dc Converters **CASE 502** • Reverse Voltage and Current Protection • Clamping & Protection **MARKING DIAGRAM Markets** • Mobile Handsets AD M • MP3 Players 1 2 

- Digital Camera and Camcorders 

AD = Device Code M = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation position may vary depending upon manufacturing location. 

- Notebook PCs and PDAs 

• GPS = Pb−Free Package (Note: Microdot may be in either location) **MAXIMUM RATINGS** *Date Code orientation position may vary depending upon manufacturing location. **Rating Symbol Value Unit** Reverse Voltage VR 40 Vdc Forward Continuous Current (DC) IF 250 mA **ORDERING INFORMATION** Non−Repetitive Peak Forward Surge IFSM 1.0 A **Device Package Shipping**[†] Current ESD Rating: Human Body Model ESD Class 2 NSR0340V2T1G SOD−523 3000 / Tape & Reel Machine Model Class A (Pb−Free) Stresses exceeding Maximum Ratings may damage the device. Maximum NSR0340V2T5G SOD−523 8000 / Tape & Reel Ratings are stress ratings only. Functional operation above the Recommended (Pb−Free) ~~=~~ Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **NSR0340V2T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **June, 2013 − Rev. 1** 

**NSR0340V2** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance<br>Junction−to−Ambient (Note 1)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|600<br>200|°C/W<br>mW|
|Thermal Resistance<br>Junction−to−Ambient (Note 2)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|300<br>400|°C/W<br>mW|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C|



1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Leakage<br>(VR= 10 V)<br>(VR= 25 V)<br>(VR= 40 V)|IR||0.2<br>0.5<br>1.5|1.0<br>3.0<br>6.0|�A|
|Forward Voltage<br>(IF= 10 mA)<br>(IF= 100 mA)<br>(IF= 200 mA)|VF||310<br>410<br>470|350<br>450<br>510|mV|
|Total Capacitance<br>(VR= 10 V, f = 1 MHz)|CT||6.0||pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR= 1.0 mA)|trr||5.0||ns|



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DC Current<br>Source<br>+ − tr tp<br>0.1  � F 0 V<br>10%<br>750  � H IF VR 90%<br>50  �  Output 0.1  � F Pulse Generator<br>Pulse Output<br>Generator IF<br>Adjust for IRM DUT trr<br>RL = 50  �<br>iR(REC) = 1 mA<br>Current IRM<br>Transformer Output Pulse<br>(IF = IRM = 10 mA; measured<br>at iR(REC) = 1 mA)<br>50  �  Input<br>Oscilloscope<br>1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.<br>2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.<br>3. Pulse Generator transition time << trr.<br>4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.<br>5. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**NSR0340V2** 

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1000 10000<br>1000 150 ° C<br>100 125 ° C 100 125 ° C<br>10<br>10 ° 85 ° C<br>150 C<br>1<br>1 0.1 25 ° C<br>0.01<br>0.1 85 ° C 25 ° C −40 ° C 0.001 −40 ° C<br>0.0001<br>0.01 0.00001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 35 40<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 2. Forward Voltage Figure 3. Leakage Current<br>30<br>25 T A = 25 ° C<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35 40<br>VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>, REVERSE CURRENT (<br>, FORWARD CURRENT (mA)IF IR<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

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**3** 

**NSR0340V2** 

## **PACKAGE DIMENSIONS** 

**SOD−523** CASE 502 ISSUE E 

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−X−<br>D NOTES:<br>— −Y− 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>—— TS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>E MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>BASE MATERIAL.<br>1 2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-<br>2X b TRUSIONS, OR GATE BURRS.<br>0.08 M X Y MILLIMETERS<br>DIM MIN NOM MAX<br>TOP VIEW A 0.50 0.60 0.70<br>b 0.25 0.30 0.35<br>c 0.07 0.14 0.20<br>D 1.10 1.20 1.30<br>E 0.70 0.80 0.90<br>A H E 1.50 1.60 1.70<br>L 0.30 REF<br>afh ne L2 0.15 0.20 0.25<br>c a HE RECOMMENDED<br>SIDE VIEW SOLDERING FOOTPRINT*<br>2X 1.80<br>2X L 0.48 2X<br>0.40<br>PACKAGE<br>2X L2 ao ) ke OUTLINE a DIMENSION: MILLIMETERS<br>BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**NSR0340V2T1/D** 

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