NSR0340P2T5G

NSR0340P2 

## Schottky Barrier Diode 

Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340P2 in a SOD−923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 

## **Features** 

- Very Low Forward Voltage Drop − 420 mV @ 100 mA 

- Low Reverse Current − 0.6 A @ 10 V 

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## **40 V SCHOTTKY BARRIER DIODE** 

- Continuous Forward Current − 200 mA 

- Power Dissipation with Minimum Trace − 190 mW 

- Very High Switching Speed − 3.0 ns @ 10 mA 

- Low Capacitance − 4 pF @ 5.0 V 

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1 2<br>CATHODE ANODE<br>**----- End of picture text -----**<br>


- This is a Pb−Free Device 

## **Typical Applications** 

- LCD and Keypad Backlighting 

- Camera Photo Flash 

- Buck and Boost dc−dc Converters 

- Reverse Voltage and Current Protection 

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MARKING<br>2 DIAGRAM<br>&<br>1<br>SOD−923   M<br>CASE 514AB<br>1 2<br>R<br>**----- End of picture text -----**<br>


- Clamping & Protection 

## **Markets** 

R = Specific Device Code M = Month Code 

- Mobile Handsets 

- MP3 Players 

- Digital Camera and Camcorders 

- Notebook PCs & PDAs 

- GPS 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|40|V|
|Forward Current (DC)|IF|200|mA|
|Non−Repetitive Peak Forward Surge<br>Current|IFSM|1.0|A|
|ESD Rating:<br>Human Body Model<br>Machine Model|ESD|Class 2<br>Class A||



## **ORDERING INFORMATION** 

|**Device**<br>**Package**|**Shipping**†|
|---|---|
|NSR0340P2T5G<br>SOD−923|2 mm Pitch|
|(Pb−Free)|8000 / Tape & Reel|
|†For information on tape and reel specifications,||
|including part orientation and tape sizes, please||
|refer to our Tape and Reel Packaging Specifications||
|Brochure, BRD8011/D.||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

Publication Order Number: **NSR0340P2/D** 

**1** 

© Semiconductor Components Industries, LLC, 2008 **March, 2017 − Rev. 1** 

**NSR0340P2** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance<br>Junction−to−Ambient (Note 1)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|520<br>190|°C/W<br>mW|
|Thermal Resistance<br>Junction−to−Ambient (Note 2)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|175<br>570|°C/W<br>mW|
|Junction and Storage Temperature Range|TJ, Tstg|−55 to +125|°C|



1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Leakage<br>(VR= 10 V)<br>(VR= 40 V)|IR||0.6<br>4.0|5.0<br>20|�A|
|Forward Voltage<br>(IF= 10 mA)<br>(IF= 100 mA)<br>(IF= 200 mA)|VF||290<br>420<br>520|320<br>460<br>560|mV|
|Total Capacitance<br>(VR= 5.0 V, f = 1 MHz)|CT||4.0||pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, IR= 1.0 mA)|trr||3.0||ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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DC Current<br>Source<br>+ − tr t p<br>0.1  � F 0 V<br>10%<br>750  � H IF VR 90%<br>50  �  Output 0.1  � F Pulse Generator<br>Pulse Output<br>Generator IF<br>Adjust for IRM DUT t rr<br>RL = 50  �<br>iR(REC) = 1 mA<br>Current IRM<br>Transformer Output Pulse<br>(IF = IRM = 10 mA; measured<br>at iR(REC) = 1 mA)<br>50  �  Input<br>Oscilloscope<br>**----- End of picture text -----**<br>


1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA. 

2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. 

3. Pulse Generator transition time << trr. 

4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM. 

5. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

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**2** 

**NSR0340P2** 

## **TYPICAL CHARACTERISTICS** 

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1000 10000<br>1000 125 ° C<br>100 100 85 ° C<br>10<br>125 ° C 25 ° C<br>10 1<br>25 ° C 0.1<br>1 85 ° C −40 ° C 0.01 −40 ° C<br>0.001<br>0.1 0.0001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 35 40<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 2.  Figure 3.<br>13<br>11<br>9<br>7<br>5<br>3<br>1<br>0 5 10 15 20 25 30 35 40<br>VR, REVERSE VOLTAGE (V)<br>Figure 4.<br>A)<br>�<br>, REVERSE CURRENT (<br>, FORWARD CURRENT (mA)IF IR<br>, TOTAL CAPACITANCE (pF)Ct<br>**----- End of picture text -----**<br>


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**3** 

**NSR0340P2** 

## **PACKAGE DIMENSIONS** 

**SOD−923** CASE 514AB ISSUE C 

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−X−<br>D<br>−Y−<br>E<br>1 2<br>2X b +h<br>0.08 X Y<br>TOP VIEW<br>A<br>c a HE<br>SIDE VIEW<br>2X L<br>r<br>2X L2 es<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

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3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>FINISH. MINIMUM LEAD THICKNESS IS THE<br>MINIMUM THICKNESS OF BASE MATERIAL.<br>4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.34 0.37 0.40 0.013 0.015 0.016<br>==———— b 0.15 0.20 0.25 0.006 0.008 0.010<br>c 0.07 0.12 0.17 0.003 0.005 0.007<br>D 0.75 0.80 0.85 0.030 0.031 0.033<br>E 0.55 0.60 0.65 0.022 0.024 0.026<br>HE 0.95 1.00 1.05 0.037 0.039 0.041<br>L 0.19 REF 0.007 REF<br>L2 0.05 0.10 0.15 0.002 0.004 0.006<br>—————<br>SOLDERING FOOTPRINT*<br>1.20<br>2X<br>0.36 2X<br>0.25<br>t P<br>PACKAGE<br>e p s<br>OUTLINE<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


See Application Note AND8455/D for more mounting details 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**NSR0340P2/D** 

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