NSR0320XV6T1G

## NSR0320XV6T1 

## Schottky Barrier Diode 

These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. 

## **Features** 

## **http://onsemi.com** 

- Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc 

- High Current Capability 

- These are Pb−Free Devices 

**MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) 

|**MAXIMUM RATINGS** (TJ = 125J = 125= 125°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|23|V|
|Forward Power Dissipation @ TA= 25°C<br>Derate above 25°C|PF|200<br>2.0|mW<br>mW/°C|
|Forward Current (DC) − Continuous|IF|1|A|
|Forward Current<br>t = 8.3 ms Half Sinewave; JEDEC Method|IF|7.5|A|
|Junction Temperature|TJ|125 Max|°C|
|Storage Temperature Range|Tstg|−55 to +150|°C|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **HIGH CURRENT SCHOTTKY BARRIER DIODE** 

1, 2, 5, 6 3, 4 CATHODE ANODE **SOT−563 CASE 463A** S 1 **STYLE 5** 

## **MARKING DIAGRAM** 

RD M 1 

RD = Specific Device Code M = Month Code = Pb−Free Package 

(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**Characteristic**<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~ee~~|**Min**<br>~~ee~~<br>~~es~~|**Typ**<br>~~ee~~<br>~~ee~~|**Max**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|
|Total Capacitance<br>(VR= 5.0 V, f = 1.0 MHz)<br>~~a~~|CT<br>~~ee ~~<br>~~a~~|−<br> ~~es ~~<br>~~a~~|30<br> ~~ee~~<br>~~a~~|35<br>~~ee~~<br>~~a~~|pF<br>~~a~~|
|Reverse Leakage<br>(VR= 15 V)<br>~~a~~|IR<br>~~a~~|−<br>~~a~~|10<br>~~a~~|50<br>~~a~~|Adc<br>~~a~~|
|Forward Voltage<br>(IF= 10 mAdc)<br>~~eo~~|VF<br>~~eo~~|−<br>~~eo~~|0.24<br>~~eo~~|0.27<br>~~eo~~|Vdc<br>~~eo~~|
|Forward Voltage<br>(IF= 100 mAdc)<br>~~Oo~~|VF<br>~~Oo~~|−<br>~~Oo~~|0.30<br>~~Oo~~|0.35<br>~~Oo~~|Vdc<br>~~Oo~~|
|Forward Voltage<br>(IF= 900 mAdc)<br>~~pe~~|VF<br>~~pe~~|−<br>~~pe~~|0.45<br>~~pe~~|0.50<br>~~pe~~|Vdc<br>~~pe~~|



|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NSR0320XV6T1|NSR0320XV6T1<br>SOT−563*|4000/Tape & Reel|
|NSR0320XV6T1G|NSR0320XV6T1G<br>SOT−563*|4000/Tape & Reel|
|NSR0320XV6T5|NSR0320XV6T5<br>SOT−563*|8000/Tape & Reel|
|NSR0320XV6T5G|NSR0320XV6T5G<br>SOT−563*|8000/Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

- *This package is inherently Pb−Free. 

Publication Order Number: **NSR0320XV6T1/D** 

© Semiconductor Components Industries, LLC, 2007 **February, 2007 − Rev. 6** 

**NSR0320XV6T1** 

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1000 10000<br>150 ° C<br>125 ° C<br>1000<br>100 °<br>150 C<br>85 ° C<br>100<br>10<br>85 ° C<br>10<br>−55 ° C 25 ° C<br>1 25 ° C −45 ° C 1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (<br>**----- End of picture text -----**<br>


**Figure 1. Forward Voltage** 

**Figure 2. Leakage Current** 

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140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 5 10 15 20<br>VR, REVERSE VOLTAGE (V)<br>CT, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Total Capacitance** 

**http://onsemi.com** 

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**NSR0320XV6T1** 

## **PACKAGE DIMENSIONS** 

## **SOT−563, 6 LEAD** 

CASE 463A−01 ISSUE F 

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D A NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI<br>−X− Y14.5M, 1982.<br>L 2. CONTROLLING DIMENSION: MILLIMETERS<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>FINISH THICKNESS. MINIMUM LEAD THICKNESS<br>6 5 4 IS THE MINIMUM THICKNESS OF BASE MATERIAL.<br>E<br>−Y− HE MILLIMETERS INCHES<br>1 2 3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.50 0.55 0.60 0.020 0.021 0.023<br>S e VoTW oes<br>b 0.17 0.22 0.27 0.007 0.009 0.011<br>b 6 5 PL C C 0.08 0.12 0.18 0.003 0.005 0.007<br>D 1.50 1.60 1.70 0.059 0.062 0.066<br>e 0.08 (0.003) M X Y E 1.10 1.20 1.30 0.043 0.047 0.051<br>e 0.5 BSC 0.02 BSC<br>L 0.10 0.20 0.30 0.004 0.008 0.012<br>HE 1.50 1.60 1.70 0.059 0.062 0.066<br>STYLE 5:<br>PIN 1. CATHODE<br> 2. CATHODE<br> 3. ANODE<br> 4. ANODE<br> 5. CATHODE<br> 6. CATHODE<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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0.3<br>0.0118<br>0.45<br>0.0177<br>Aone<br>1.0<br>Teou, 1.35 0.0394<br>0.0531<br>lag<br>0.5 0.5<br>0.0197 0.0197<br>SCALE 20:1 mm<br>(—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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**NSR0320XV6T1/D** 

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