NSR01L30NXT5G

NSR01L30NXT5G 

## Schottky Barrier Diode 

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon No−lead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. 

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## **30 V SCHOTTKY BARRIER DIODE** 

## **Features** 

- Very Low Forward Voltage Drop − 400 mV @ 10 mA 

- Low Reverse Current − 0.2 A @ 10 V VR 

1 2 CATHODE ANODE 

- 100 mA of Continuous Forward Current 

- ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C 

- Power Dissipation of 312 mW with Minimum Trace 

- Very High Switching Speed 

- Low Capacitance − CT = 7 pF 

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MARKING<br>DIAGRAM<br>PIN 1<br>DSN2<br>(0201) I130<br>CASE 152AA YYY<br>**----- End of picture text -----**<br>


- This is a Halide−Free Device 

- This is a Pb−Free Device 

I130 = Specific Device Code YYY = Year Code 

## **Typical Applications** 

- LCD and Keypad Backlighting 

- Camera Photo Flash 

- Buck and Boost dc−dc Converters 

- Reverse Voltage and Current Protection 

- Clamping & Protection 

## **Markets** 

- Mobile Handsets 

- MP3 Players 

**ORDERING INFORMATION** 

**Device Package Shipping** † NSR01L30NXT5G DSN2 5000 / Tape & Reel (Pb−Free) ~~a~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

- Digital Camera and Camcorders 

- Notebook PCs & PDAs 

- GPS 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|30|V|
|Forward Current (DC)|IF|100|mA|
|Forward Surge Current<br>(60 Hz @ 1 cycle)|IFSM|4.0|A|
|ESD Rating:<br>Human Body Model<br>Machine Model|ESD|>8.0<br>>400|kV<br>V|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

Publication Order Number: **NSR01L30/D** 

**1** 

© Semiconductor Components Industries, LLC, 2010 **September, 2010 − Rev. 2** 

**NSR01L30NXT5G** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Thermal Resistance<br>Junction−to−Ambient (Note 1)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|||400<br>312|°C/W<br>mW|
|Thermal Resistance<br>Junction−to−Ambient (Note 2)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|||170<br>735|°C/W<br>mW|
|Storage Temperature Range|Tstg|||−40 to +125|°C|
|Junction Temperature|TJ|||+150|°C|



1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick  single sided. Operating to steady state. 

2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick  single sided. Operating to steady state. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Leakage<br>(VR= 10 V)<br>(VR= 30 V)|IR|||0.2<br>3.0|�A|
|Forward Voltage<br>(IF= 10 mA)<br>(IF= 100 mA)|VF|||0.40<br>0.53|V|
|Total Capacitance<br>(VR= 5.0 V, f = 1 MHz)|CT||7.0||pF|



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**2** 

**NSR01L30NXT5G** 

## **TYPICAL CHARACTERISTICS** 

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100 1.0E+03<br>150 ° C<br>1.0E+02 125 ° C<br>10<br>1.0E+01<br>75 ° C<br>150 ° C 1.0E+00<br>1<br>1.0E−01 25 ° C<br>125 ° C<br>0.1 1.0E−02<br>75 ° C<br>25 ° C 1.0E−03 −25 ° C<br>0.01<br>−25 ° C 1.0E−04<br>0.001 1.0E−05<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 1. Forward Voltage Figure 2. Leakage Current<br>20<br>18 T A = 25 ° C<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>, FORWARD CURRENT (mA)IF , REVERSE CURRENT (Ir<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 3. Total Capacitance** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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DSN2, 0.6x0.3, 0.4P, (0201)<br>CASE 152AA<br>ISSUE B<br>**----- End of picture text -----**<br>


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SCALE 8:1<br>**----- End of picture text -----**<br>


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DATE 30 APR 2017<br>**----- End of picture text -----**<br>


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D A NOTES:1. DIMENSIONING AND TOLERANCING PER<br>B ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>MILLIMETERS<br>DIM MIN MAX<br>E A 0.24 0.30<br>2X 0.06 C A1 0.00 0.01<br>fi<br>a n tt b 0.20 0.22<br>D 0.30 BSC<br>2X 0.06 C E 0.60 BSC<br>e 0.40 BSC<br>= TOP VIEW ia L 0.10 0.12<br>GENERIC GENERIC<br>0.05 C<br>MARKING DIAGRAM1* MARKING DIAGRAM2*<br>A<br>a PIN 1 PIN 1<br>2X 0.05 C<br>—<br>A1 8 C [SEATING] PLANE XXXXYYY XM<br>SIDE VIEW<br>XXXX = Specific Device Code X = Specific Device Code<br>1 1 e YYY = Year Code M = Date Code<br>*This information is generic. Please refer<br>2X L 2 to device data sheet for actual part<br>coe 2X b marking. Pb−Free indicator, “G”, may<br>0.05 C A B or not be present. Some products may<br>not follow the Generic Marking.<br>**----- End of picture text -----**<br>


**BOTTOM VIEW** 

## **CATHODE BAND MONTH CODING** 

## **MOUNTING FOOTPRINT*** 

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0.28<br>0.75<br>0.28 t”oa 0.30<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


See Application Note AND8398/D for more mounting details 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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NOV OCT<br>DEC<br>SEP ood<br>XXXX DEVICE CODE<br>JUN<br>MAR YYY YEAR CODE<br>FEB<br>JAN<br>a<br>XXXX<br>(EXAMPLE)<br>Y09<br>INDICATES AUG 2009<br>**----- End of picture text -----**<br>


|**DOCUMENT NUMBER:**|**98AON39897E**||
|---|---|---|
|**DESCRIPTION:**|**DSN2, 0.6X0.3, 0.4P, (0201)**||



Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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