NSR01L30MXT5G

NSR01L30MX 

## Schottky Barrier Diode 

These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. 

## **Features** 

- Very Low Forward Voltage Drop − 350 mV @ 1 mA 

- Low Reverse Current − 0.2 A @ 10 V 

- 100 mA of Continuous Forward Current 

- ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Class C 

## **www.onsemi.com 30 V SCHOTTKY BARRIER DIODE** 

- This is a Halide−Free Device 

- This is a Pb−Free Device 

1 2 CATHODE ANODE 

## **Typical Applications** 

- LCD and Keypad Backlighting 

- Camera Photo Flash 

- Buck and Boost dc−dc Converters 

- Reverse Voltage and Current Protection 

- Clamping & Protection 

## **Markets** 

- Mobile Handsets 

- MP3 Players 

**MARKING** ~~S~~ **DIAGRAM** PIN 1 **X3DFN2 CASE 152AF** M i= 

L = Specific Device Code (Rotated 180 ° ) M = Date Code 

- Digital Camera and Camcorders 

- Notebook PCs & PDAs 

## **ORDERING INFORMATION** 

- GPS 

**MAXIMUM RATINGS** 

**Rating Symbol Value Unit** Reverse Voltage VR 30 V Forward Current (DC) IF 100 mA Forward Surge Current IFSM A (60 Hz @ 1 cycle) 2.0 ESD Rating: Human Body Model ESD >8.0 kV Machine Model >400 V ~~Fe~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NSR01L30MXT5G|X3DFN2<br>(Pb−Free)|10000 /<br>Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **NSR01L30MX/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **April, 2016 − Rev. 2** 

**NSR01L30MX** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Thermal Resistance<br>Junction−to−Ambient (Note 1)<br>Total Power Dissipation @ TA= 25°C|R�JA<br>PD|||695<br>180|°C/W<br>mW|
|Storage Temperature Range|Tstg|||−55 to +150|°C|
|Junction Temperature|TJ|||+150|°C|



1. Mounted onto a 4 in square FR−4 board 100 mm sq. 2 oz. Cu 0.06” thick single−sided. Operating to steady state. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise note|d)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Leakage<br>(VR= 10 V)<br>(VR= 30 V)|IR|||0.2<br>0.5|�A|
|Forward Voltage<br>(IF= 1 mA)<br>(IF= 10 mA)|VF|||0.35<br>0.46|V|
|Total Capacitance<br>(VR= 5.0 V, f = 1 MHz)|CT||0.8||pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**NSR01L30MX** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100 1000<br>150 ° C<br>100<br>10 150 ° C 75 ° C 10 125 ° C 75 ° C<br>1<br>125 ° C 25 ° C 25 ° C<br>0.1<br>1<br>0.01<br>−25 ° C −25 ° C<br>0.001<br>−55 ° C<br>0.1 0.0001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 5 10 15 20 25 30<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 1. Forward Voltage Figure 2. Leakage Current<br>2.5<br>TA = 25 ° C<br>2<br>1.5<br>1<br>0.5<br>0<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>, FORWARD CURRENT (mA)IF , REVERSE CURRENT (Ir<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 3. Total Capacitance** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**X3DFN2, 0.62x0.32, 0.355P, (0201)** CASE 152AF ISSUE A 

**SCALE 8:1** 

## DATE 17 FEB 2015 

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NOTES:<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
D A B 1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>PIN 1<br>INDICATOR MILLIMETERS<br>(OPTIONAL) DIM MIN MAX<br>A 0.25 0.33<br>ay TOP VIEW E A1 −−− 0.05<br>b 0.22 0.28<br>D 0.58 0.66<br>E 0.28 0.36<br>e 0.355 BSC<br>0.05 C L2 0.17 0.23<br>- a<br>A<br>GENERIC<br>2X 0.05 C<br>MARKING DIAGRAM*<br>A1<br>SIDE VIEW Hy C [SEATING] PLANE<br>PIN 1<br>XM<br>e<br>_ 2X b io<br>1 2 X = Specific Device Code<br>M = Date Code<br>0.05 M C A B<br>2X L2<br>I 0.05 S]O] M C | A [| $Pr B e con RECOMMENDED<br>MOUNTING FOOTPRINT*<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


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RECOMMENDED<br>MOUNTING FOOTPRINT*<br>0.74 2X<br>0.30<br>Eo<br>1<br>FHE ET<br>2X 0.31<br>a<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


See Application Note AND8398/D for more mounting details 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **DOCUMENT NUMBER:** 

**98AON56472E** 

**PAGE 1 OF 1** 

**DESCRIPTION: X3DFN2, 0.62X0.32, 0.355P, (0201)** 

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