NSPU5132MUTBG

## NSPU5132 

## 13.5 V Unidirectional ESD and Surge Protection Device 

## **Features** 

- Unidirectional High Voltage ESD & Surge Protection Device 

- Provides ESD Protection to IEC61000−4−2 Level 4: 

## **www.onsemi.com** 

   - ±30 kV Contact Discharge 

- Small Package (1.8 mm x 2.0 mm) 

- High Voltage Zener Diode Protects Supply Rail up to 200 A (8/20 s) 

- These Devices are Pb−Free and are RoHS Compliant 

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UDFN6<br>D4 SUFFIX<br>CASE 517CS<br>**----- End of picture text -----**<br>


## **APPLICATION DIAGRAM** 

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Vcc (1,2,3,4)<br>GND (6,8)<br>DAP**<br>GND (5,7)<br>**Die Attach Pad on<br>|! 7<br>back of package<br>(connect to ground)<br>**----- End of picture text -----**<br>


## **BLOCK DIAGRAM** 

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Cathode Anode<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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4W M<br>1<br>4W = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>ORDERING INFORMATION<br>Device Package Shipping [†]<br>NSPU5132MUTBG UDFN6 3000 / Tape &<br>(Pb−Free) Reel<br>"ESF<br>**----- End of picture text -----**<br>


†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2017 **November, 2018 − Rev. 1** 

**NSPU5132/D** 

**NSPU5132** 

## **Table 1. PIN DESCRIPTIONS** 

|**Table 1. PIN DESCRIPTIONS**|**Table 1. PIN DESCRIPTIONS**|**Table 1. PIN DESCRIPTIONS**|
|---|---|---|
||||
|||**6−Lead, UDFN−8 Package**|
|**Pin**|**Name**|**Description**|
|1|VCC|Cathode|
|2|VCC|Cathode|
|3|VCC|Cathode|
|4|VCC|Cathode|
|5|GND|Anode|
|6|GND|Anode|
|7|GND|Anode|
|8|GND|Anode|



## **PACKAGE / PINOUT DIAGRAMS** 

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Top View Bottom View<br>(Pins Down View) (Pins Up View)<br>6   5 1 2 3 4<br>XX M 8 7<br>Pin 1<br>Marking<br>1   2   3   4 6 5<br>6−Lead UDFN<br>**----- End of picture text -----**<br>


## **ELECTRICAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|
|---|---|
|IPP|Maximum Reverse Peak Pulse Current|
|VC|Clamping Voltage @ IPP|
|VRWM|Working Peak Reverse Voltage|
|IR|Maximum Reverse Leakage Current @ VRWM|
|VBR|Breakdown Voltage @ IT|
|IT|Test Current|
|�VBR|Maximum Temperature Coefficient of VBR|
|IF|Forward Current|
|VF|Forward Voltage @ IF|



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I<br>IF<br>VC VBR VRWM<br>V<br>IR VF<br>IT<br>IPP<br>Uni−Directional Surge Protection<br>**----- End of picture text -----**<br>


## **SPECIFICATIONS** 

## **Table 2. ABSOLUTE MAXIMUM RATINGS** 

|**Table 2. ABSOLUTE MAXIMUM RATINGS**|||
|---|---|---|
|**Parameter**|**Rating**|**Units**|
|Operating Temperature Range|–55 to +125|°C|
|Storage Temperature Range|–65 to +150|°C|
|Peak Current (tp= 8/20�s)|200|A|
|Peak Pulse Power (tp= 8/20�s)|4800|W|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **ELECTRICAL CHARACTERISTICS** 

|**Device**<br>**Name**|**Device**<br>**Marking**|**VRWM (V)**<br>(Note 1)|**IR @ VRWM**<br>**��A)**|**Breakdown Voltage**|**Breakdown Voltage**|**Breakdown Voltage**|**Breakdown Voltage**|**VC @ IPP**<br>(8 x 20�s) (Note 3)|**VC @ IPP**<br>(8 x 20�s) (Note 3)|**Junction Capacitance**<br>(VR= 0 V, f = 1 MHz,<br>Pin 1 to Pin 5)|**Junction Capacitance**<br>(VR= 0 V, f = 1 MHz,<br>Pin 1 to Pin 5)|
|---|---|---|---|---|---|---|---|---|---|---|---|
|||||**VBRV **(Note 2)|||**@ IT (mA)**|**VC (V)**|**IPP (A)**|**CJ (**|**pF)**|
|||**Max**|**Max**|**Min**|**Nom**|**Max**||**Max**||**Typ**|**Max**|
|NSPU5132|4W|13.5|0.5|13.6|15.5|17.5|1|24|200|1325|1550|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

1. A surge protector is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 

2. VBR measured at pulse test current IT at an ambient temperature of 25 ° C. 

3. Surge current waveform per Figure 1. 

**www.onsemi.com** 

**2** 

**NSPU5132** 

## **TYPICAL CHARACTERISTICS** 

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tr = rise time to peak value [8  � s]<br>Peak tf = decay time to half value [20  � s]<br>100<br>Value<br>50 Half Value<br>0<br>0 tr tf<br>TIME ( � s)<br>Ipp - PEAK PULSE CURRENT - %Ipp<br>**----- End of picture text -----**<br>


**Figure 1. IEC61000−4−5 8/20 � s Pulse Waveform** 

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24<br>22<br>20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220 240<br>IPK (A)<br> (V)<br>PK<br> @ I<br>C<br>V<br>**----- End of picture text -----**<br>


**Figure 2. Positive Clamping Voltage vs. Peak Pulse Current** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**UDFN6, 1.8x2, 0.4P** CASE 517CS ISSUE O 

## DATE 30 APR 2013 

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SCALE 4:1<br>D A B EXPOSED Cu MOLD CMPD NOTES:<br>1.<br>ÇÇ Y14.5M, 1994.<br>2.<br>ÇÇÉÉ 3.<br>- a S DETAIL B aw FROM THE TERMINAL TIP.<br>PIN ONE E ALTERNATE 4.<br>REFERENCE CONSTRUCTION AS WELL AS THE TERMINALS.<br>ÍÍÍ<br>MILLIMETERS<br>2X 0.10 C ÍÍÍ DIM MIN MAX<br>at i A 0.45 0.55<br>2X 0.10 ÍÍÍ C TOP VIEW L L A1A3 0.000.125 REF0.05<br>b 0.15 0.25<br>D 1.80 BSC<br>L1 D2 0.35 0.55<br>DETAIL B E 2.00 BSC<br>0.05 C A3 DETAIL AALTERNATE E2e 0.740.40 BSC0.94<br>6X A CONSTRUCTIONS e1 0.80 BSC<br>e2 0.95 BSC<br>0.05 C L 0.20 0.40<br>NOTE 4 ao SIDE VIEW A1 C SEATINGPLANE tof of a L1 --- 0.15<br>GENERIC<br>MARKING DIAGRAM*<br>e/2<br>0.10 C<br>DETAIL A 2X D2 e XX M<br>6X b<br>1 4 1 4 1<br>0.07 C A B<br>ayumi r 2X E2 cal : ro | 0.05 C NOTE 3 XX = Specific Device Code<br>u tt M = Date Code<br>6X L<br>0.10 C<br>Pb−Free indicator, “G” or microdot “ ”,<br>gt 6 5 [i] [o)] 6 5 J may or may not be present.<br>e1/2 e2<br>A y he e1 = SUPPLEMENTAL RECOMMENDED<br>BOTTOM VIEW BOTTOM VIEW MOUNTING FOOTPRINT*<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 

2. CONTROLLING DIMENSION: MILLIMETERS. 

3. DIMENSION b APPLIES TO PLATED TERMINALS AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 

4. COPLANARITY APPLIES TO THE EXPOSED PAD 

XX M 1 XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, . may or may not be present. 

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0.95<br>0.40<br>PITCH 6X<br>0.48<br>2X 0.55<br>PACKAGE<br>OUTLINE 2X<br>0.94 2.20<br>ie<br>0.40<br>6X 0.25 ‘poa PITCH t<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON89602E** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: UDFN6 1.8X2, 0.4P PAGE 1 OF 1** ~~es~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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