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NSM6056MT1G
Bipolar Transistor Array, NPN, 40 V, 600 mA, 380 mW
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:380mW; DC Collector Current:600mA; DC Current Gain hFE:20hFE; Transistor Case Style:SC-74; No. of P
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Power Dissipation NPN: 380mW
- Power Dissipation PNP: -
- Transistor Case Style: SC-74
- Transition Frequency NPN: 250MHz
- Transition Frequency PNP: -
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 20hFE
- DC Current Gain hFE Min PNP: -
- Continuous Collector Current NPN: 600mA
- Continuous Collector Current PNP: -
- Collector Emitter Voltage Max NPN: 40V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.04 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 18, 2026