NSD914XV2T5G
Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 500 mA
- Manufacturer: ONSEMI
- Product type: Small Signal Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-523
- Diode Configuration: Single
- Forward Voltage Max: 1V
- Forward Surge Current: 500mA
- Reverse Recovery Time: 4ns
- Average Forward Current: 200mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 8000 |
| Price | 0.013 € |
| Current stock | 10+ |
| Lead time | 30 days |
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## High‐Speed Switching Diode **==> picture [38 x 47] intentionally omitted <==** **----- Start of picture text -----**<br> a 2<br>1<br>SOD-523<br>CASE 502<br>**----- End of picture text -----**<br> ## NSD914XV2 ## **Features** - High-Speed Switching Applications - Lead Finish: 100% Matte Sn (Tin) - Qualified Maximum Reflow Temperature: 260 C - Extremely Small SOD-523 Package - These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ## **MAXIMUM RATINGS** (TA = 25 C) |**MAXIMUM RATINGS**|**MAXIMUM RATINGS**(TA = 25 C)A = 25 C)= 25 C)C)C)||| |---|---|---|---| |**Symbol**|**Rating**|**Max**|**Unit**| |VR|Reverse Voltage|100|V| |IF|Forward Current|200|mAdc| |IFM(surge)|Peak Forward Surge Current|500|mAdc| **==> picture [147 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2<br>CATHODE ANODE<br>MARKING DIAGRAM<br>5D M<br>i: 1 2<br>5D = Specific Device Code<br>M = Date Code<br>= Pb-Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br> > Stresses exceeding those listed in the Maximum Ratings table may damage the **ORDERING INFORMATION** device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **Device Package Shipping** † NSD914XV2T1G SOD-523 3,000 / Tape & **THERMAL CHARACTERISTICS** (Pb-Free) Reel **Symbol Characteristic Max Unit** NSD914XV2T5G SOD-523 8,000 / Tape & ~~a~~ PD Total Device Dissipation FR-5 Board (Note 1)TA = 25 ~~ee~~ C 200 ~~ee~~ mW ~~TP~~ (Pb-Free) Reel ~~Pf~~ Derate above 25 C 1.57 mW/C † For information on tape and reel specifications, ~~a~~ R JA Thermal Resistance ~~ee~~ Junction-to-Ambient 635 ~~ee~~ C/W including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specification TJ, Tstg Junction and Storage Temperature Range −55 C Brochure, BRD8011/D. to 150 ~~Pf a~~ 1. FR−4 @ Minimum Pad. **Symbol Characteristic Min Max Unit** ~~a|~~ **OFF CHARACTERISTICS** V(BR) Reverse Breakdown Voltage 100 − Vdc (IBR = 100 Adc) ~~Pf~~ IR Reverse Voltage Leakage Current (VR = 20 Vdc) − 25 nAdc A (VR = 75 Vdc) − 5.0 dc ~~Pf~~ CD Diode Capacitance − 4.0 pF (VR = 0 V, f = 1.0 MHz) ~~Pf~~ VF Forward Voltage − 1.0 Vdc (IF = 10 mAdc) ~~Pf~~ trr Reverse Recovery Time − 4.0 ns (IF = IR = 10 mAdc) ~~es~~ Publication Order Number: **1** Semiconductor Components Industries, LLC, 2012 **July, 2025 − Rev. 6** **NSD914XV2T1/D** **NSD914XV2** **==> picture [479 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 820 <br>IF<br>+10 V 2.0 k 0.1 F tr t p t<br>100 H IF 10% t rr t<br>| I +<br>0.1 F ‘|<br>50 OUTPUT L___J DUT 50 INPUT 90% iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>au [f][y]<br>Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br> **Figure 1. Recovery Time Equivalent Test Circuit** **==> picture [486 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10<br>TA = 150 C<br>TA = 85 C TA = -40 C 1.0 TA = 125 C<br>Pt AAAS SS<br>10<br>es ee es e e<br>——— eS SS ————_————————— TA = 85 C<br>ee AA T ae A = 25 C 0.1 ee ee<br>Se ee ee ee<br>1.0 -——f=eS A= A SS | 0.01 po ——eESE=—ESEE=—ESE=—S=—=—=S=—S== TTAA = 55 = 25 CC SSS SS S<br>0.1 ne A + F-F — —} — 0.001 —————— Se<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage Figure 3. Leakage Current<br>0.68 Pf | tf fF |<br>0.64 PfPf | | ft tf tf fF | |<br>0.60 Af AP | | tf | tf | ff|<br>0.56<br>pA | | |<br>ee<br>0.52 ee ee<br>0 2.0 4.0 6.0 8.0<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>, FORWARD CURRENT (mA)IF , REVERSE CURRENT (IR<br>, DIODE CAPACITANCE (pF)<br>D<br>C<br>**----- End of picture text -----**<br> **Figure 4. Capacitance** **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** **NSD914XV2** **REVISION HISTORY Revision Description of Changes Date** 6 Rebranded the Data Sheet to **onsemi** format. 7/10/2025 ~~—~~ This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. > **www.onsemi.com Share Feedback** ~~SS?~~ **3** Your Opinion Matters MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOD−523 1.20x0.80x0.60** CASE 502 ISSUE F ## DATE 08 FEB 2024 ## **GENERIC** ## **MARKING DIAGRAM*** **==> picture [130 x 60] intentionally omitted <==** **----- Start of picture text -----**<br> XX XX<br>1 2 1 2<br>STYLE 1 STYLE 2<br>XX = Specific Device Code<br>M Date Code<br>M M<br>**----- End of picture text -----**<br> - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: STYLE 2: PIN 1. CATHODE (POLARITY BAND) NO POLARITY 2. ANODE ## **DOCUMENT NUMBER: 98AON11524D DESCRIPTION: SOD−523 1.20x0.80x0.60** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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