Illustrative purposes only
NSBC114EPDXV6T1G
Bipolar Pre-Biased / Digital Transistor, NPN and PNP Complement, 50 V, 100 mA, 10 kohm, 10 kohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Pre-Biased / Digital Bipolar Transistors
- Product variants: No other variants available. No other names.
- No. of Pins: 6 Pin
- Power Dissipation: 357mW
- RF Transistor Case: SOT-563
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN and PNP Complement
- Transistor Case Style: SOT-563
- Base Input Resistor R1: 10kohm
- DC Current Gain hFE Min: 60hFE
- Resistor Ratio, R1 / R2: 1(Ratio)
- Base Emitter Resistor R2: 10kohm
- Operating Temperature Max: 150°C
- Digital Transistor Polarity: NPN and PNP Complement
- Continuous Collector Current: 100mA
- Continuous Collector Current Ic: 100mA
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage Max PNP: 50V
- Collector Emitter Voltage V(br)ceo: 50V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.087 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
|
|---|