Illustrative purposes only
NSBC114EDXV6T1G
Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 (Ratio)
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Pre-Biased / Digital Bipolar Transistors
- Product variants: No other variants available. No other names.
- No. of Pins: 6 Pin
- Power Dissipation: 500mW
- RF Transistor Case: SOT-563
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Transistor Case Style: SOT-563
- Base Input Resistor R1: 10kohm
- DC Current Gain hFE Min: 35hFE
- Resistor Ratio, R1 / R2: 1(Ratio)
- Base Emitter Resistor R2: 10kohm
- Operating Temperature Max: 150°C
- Digital Transistor Polarity: Dual NPN
- Continuous Collector Current: 100mA
- Continuous Collector Current Ic: 100mA
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage V(br)ceo: 50V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.09 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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