NRVTSA3100ET3G

## NRVTSA3100E, NRVTSAF3100E 

## Low Forward Voltage, Low Leakage Trench-based Schottky Rectifier 

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## **Features** 

- Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage 

- Fast Switching with Exceptional Temperature Stability 

- Low Power Loss and Lower Operating Temperature 

- Higher Efficiency for Achieving Regulatory Compliance 

- High Surge Capability 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These are Pb−Free and Halide−Free Devices 

## **Typical Applications** 

- Switching Power Supplies including Wireless, Smartphone and Notebook Adapters 

- High Frequency and DC−DC Converters 

- Freewheeling and OR−ing diodes 

- Reverse Battery Protection 

- Instrumentation 

- LED Lighting 

## **Mechanical Characteristics:** 

**SCHOTTKY BARRIER RECTIFIERS 3 AMPERES 100 VOLTS** 

## **MARKING DIAGRAMS** 

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SMA<br>CASE 403D TE31<br>STYLE 1 AYWW<br>SMA−FL<br>E31<br>CASE 403AA<br>AYWW<br>STYLE 6<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


- Case: Epoxy, Molded 

- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. 

- Lead Finish: 100% Matte Sn (Tin) 

- Lead and Mounting SurfaceTemperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

**ORDERING INFORMATION** 

**Device Package Shipping** † NRVTSA3100ET3G SMA 5000 / (Pb−Free) Tape & Reel NRVTSAF3100ET3G SMA−FL 5000 / (Pb−Free) Tape & Reel ~~=o~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NRVTSA3100E/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **November, 2016 − Rev. 2** 

**NRVTSA3100E, NRVTSAF3100E** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(TL= 134°C)|IF(AV)|3.0|A|
|Peak Repetitive Forward Current,<br>(Square Wave, 20 kHz, TL= 127°C)|IFRM|6.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature|TJ|−55 to +175|°C|
|ESD Rating (Human Body Model)||1A||
|ESD Rating (Machine Model)||M3||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**|
|Maximum Thermal Resistance, Steady State (Note 1)<br>NRVTSA3100E<br>Junction−to−Lead<br>Junction−to−Ambient<br>NRVTSAF3100E<br>Junction−to−Lead<br>Junction−to−Ambient|RθJL<br>RθJA<br>RθJL<br>RθJA|−<br>−<br>−<br>−|22<br>80<br>23.8<br>82|°C/W|
|**ELECTRICAL CHARACTERISTICS**|||||
|Instantaneous Forward Voltage (Note 2)<br>(iF= 1.0 Amps, TJ= 25°C)<br>(iF= 3.0 Amps, TJ= 25°C)<br>(iF= 1.0 Amps, TJ= 125°C)<br>(iF= 3.0 Amps, TJ= 125°C)|vF|0.61<br>0.88<br>0.53<br>0.66|−<br>0.995<br>−<br>0.70|V|
|Reverse Current (Note 2)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|iR|0.90<br>0.62|5.0<br>2.0|�A<br>mA|
|Diode Capacitance<br>(Rated dc Voltage, TJ= 25°C, f = 1 MHz)|Cd|14.3||pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

1. Assumes 600 mm[2] 1 oz. copper bond pad, on a FR4 board. 

2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**NRVTSA3100E, NRVTSAF3100E** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>10 TA = 150 TA °  = 175 C ° C TA = 85 ° C 10 TA = 175 ° C TA = 85 ° C<br>TA = 150 ° C<br>T A  = 125 ° C<br>T A  = 25 ° C TA = 125 ° C TA = 25 ° C<br>1 1<br>0.1 TA = −55 ° C 0.1 TA = −55 ° C<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E−02 1.E−01<br>1.E−03 T A  = 175 ° C 1.E−02 TA = 175 ° C<br>TA = 150 ° C TA = 150 ° C<br>1.E−04 TA = 125 ° C 1.E−03 TA = 125 ° C<br>TA = 85 ° C<br>1.E−05 TA = 85 ° C 1.E−04<br>1.E−06 1.E−05<br>T A  = 25 ° C<br>1.E−07 TA = 25 ° C 1.E−06<br>1.E−08 1.E−07<br>10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>1000 5<br>TJ = 25 ° C R � JL = 22 ° C/W<br>DC<br>4<br>3 Square Wave<br>100<br>2<br>1<br>10 0<br>0.1 1 10 100 0 10 30 50 70 90 110 130 150 170<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>C, JUNCTION CAPACITANCE (pF) , AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating for NRVTSA3100E** 

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**3** 

**NRVTSA3100E, NRVTSAF3100E** 

## **TYPICAL CHARACTERISTICS** 

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5 6<br>R JL = 22 ° C/W IPK/IAV = 20<br>DC<br>5<br>4 T oT TTT an) rn<br>N) | LEY<br>IPK/IAV = 10<br>4 I PK /I AV  = 5<br>3 TOTTIP| | | | dT rT dT tT | TT NA Ty] LE<br>Square Wave<br>3<br>Square Wave<br>2<br>2 DC<br>\ Annes<br>1 LEELA L__—-<br>1<br>\ ce<br>0 PON 0 Beer<br>0 10 30 50 70 90 110 130 150 170 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>TC, CASE TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 7. Current Derating for NRVTSAF3100E Figure 8. Forward Power Dissipation<br>100<br>50% Duty Cycle<br>ess— nT<br>20%<br>ee 211<br>10 10%<br>1 A eee |<br>5%<br>2%<br>SOG 1% iiilimesee eee tf<br>1<br>se ee ee nc ee cee aETL 4<br>0.1 aaPL LUTIIMN ETAT CTI TEI)eeETI ellTCT —EDull  oak ll<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (S)<br>Figure 9. Typical Transient Thermal Response, Junction−to−Ambient for NRVTSA3100E<br>100<br>50% Duty Cycle<br>SS ETT erm TTI I Tt<br>20%<br>10 10%<br>geeee?|<br>5%<br>2%<br>ECORI nD Serre rrr Tn TCT<br>1 1%<br>Soe eee ee eee ee se nee aE TL 4<br>LT TTT TET EET — iEa ll<br>0.1 a ee ell<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (S)<br>DISSIPATION (W)<br>, AVERAGE FORWARD POWER<br>, AVERAGE FORWARD CURRENT (A) F(AV)<br>IF(AV) P<br>C/W)<br>°<br>RESISTANCE (<br>, TYPICAL TRANSIENT THERMAL<br>(t)<br>R<br>C/W)<br>°<br>RESISTANCE (<br>, TYPICAL TRANSIENT THERMAL<br>(t)<br>R<br>**----- End of picture text -----**<br>


**Figure 10. Typical Transient Thermal Response, Junction−to−Ambient for NRVTSAF3100E** 

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**4** 

**NRVTSA3100E, NRVTSAF3100E** 

## **PACKAGE DIMENSIONS** 

## **SMA** 

CASE 403D−02 ISSUE G 

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HE<br>E<br>b D<br>POLARITY INDICATOR<br>OPTIONAL AS NEEDED<br>(SEE STYLES)<br>**----- End of picture text -----**<br>


- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. 

|**DIM**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**|
|---|---|---|---|---|---|---|
||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**|
|**A**|1.97|2.10|2.20|0.078|0.083|0.087|
|**A1**|0.05|0.10|0.20|0.002|0.004|0.008|
|**b**|1.27|1.45|1.63|0.050|0.057|0.064|
|**c**|0.15|0.28|0.41|0.006|0.011|0.016|
|**D**|2.29|2.60|2.92|0.090|0.103|0.115|
|**E**|4.06|4.32|4.57|0.160|0.170|0.180|
|**HE**|4.83|5.21|5.59|0.190|0.205|0.220|
|**L**|0.76|1.14|1.52|0.030|0.045|0.060|



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A<br>A1<br>L c<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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4.000<br>0.157<br>2.000<br>0.079<br>2.000<br>0.079<br>SCALE 8:1<br>� inches [mm] �<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**5** 

**NRVTSA3100E, NRVTSAF3100E** 

## **PACKAGE DIMENSIONS** 

**SMA−FL** CASE 403AA ISSUE O 

**==> picture [408 x 260] intentionally omitted <==**

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E<br>NOTES:<br>E1 1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>MILLIMETERS<br>D DIM MIN MAX<br>A 0.90 1.10<br>b 1.25 1.65<br>c 0.15 0.30<br>D 2.40 2.80<br>TOP VIEW E 4.80 5.40<br>E1 4.00 4.60<br>[f — A = L 0.70 1.10<br>if RECOMMENDED<br>SOLDER FOOTPRINT*<br>c<br>SIDE VIEW C SEATING<br>PLANE 5.56<br>1.76<br>: 3 ro<br>2X b<br>1.30<br>Wey 2X L DIMENSIONS: MILLIMETERS<br>BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**6**