NRVTS2H60ESFT3G

## NRVTS2H60ESF, NRVTSM260EV2 

## Very Low Forward Voltage Trench-based Schottky Rectifier 

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## **Features** 

- Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage 

- Fast Switching with Exceptional Temperature Stability 

- Low Power Loss and Lower Operating Temperature 

- Higher Efficiency for Achieving Regulatory Compliance 

**TRENCH SCHOTTKY RECTIFIER 2.0 AMPERES 60 VOLTS** 

- Low Thermal Resistance 

- High Surge Capability 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

- Case: Molded Epoxy 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight: 11.7 mg (Approximately) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds 

- MSL 1 

## **Typical Applications** 

- Switching Power Supplies including Compact Adapters and Flat Panel Display 

- High Frequency and DC−DC Converters 

- Freewheeling and OR−ing diodes 

- Reverse Battery Protection 

- Instrumentation 

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ge ¢<br>SOD−123FL POWERMITE<br>CASE 498 CASE 457<br>**----- End of picture text -----**<br>


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MARKING DIAGRAMs<br>**----- End of picture text -----**<br>


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2H6M M<br>1 2<br>2H6<br>L h<br>2H6 = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NRVTS2H60ESFT1G|SOD−123FL<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|NRVTS2H60ESFT3G|SOD−123FL<br>(Pb−Free)|10,000 /<br>Tape & Reel|
|NRVTSM260EV2T1G|Powermite<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|NRVTSM260EV2T3G|Powermite<br>(Pb−Free)|12,000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NRVTS2H60ESF/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **August, 2018 − Rev. 2** 

**NRVTS2H60ESF, NRVTSM260EV2** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|60|V|
|Average Rectified Forward Current<br>(TL= 125°C)|IO|2.0|A|
|Peak Repetitive Forward Current<br>(Square Wave, 20 kHz, TL= 139°C)|IFRM|4.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Storage and Operating Junction Temperature Range (Note 1)|Tstg, TJ|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|**SOD−123FL**||||
|Thermal Resistance, Junction−to−Lead (Note 2)|�JCL|24.4|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|85|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 3)|R�JA|330|°C/W|
|**POWERMITE**||||
|Thermal Resistance, Junction−to−Lead (Note 2)|�JCL|8.6|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|80|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 3)|R�JA|237|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 4)<br>(IF= 1.0 A, TJ= 25°C)<br>(IF= 2.0 A, TJ= 25°C)<br>(IF= 1.0 A, TJ= 125°C)<br>(IF= 2.0 A, TJ= 125°C)|VF|0.55<br>0.65<br>0.47<br>0.58|V|
|Maximum Instantaneous Reverse Current (Note 4)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|IR|12<br>3|�A<br>mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Mounted with 700 mm[2] copper pad size (Approximately 1 in[2] ) 1 oz FR4 Board. 

3. Mounted with pad size approximately 20 mm[2] copper, 1 oz FR4 Board. 

4. Pulse Test: Pulse Width ≤ 380 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**NRVTS2H60ESF, NRVTSM260EV2** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>T A  = 175 ° C T A  = 175 ° C<br>10 TA = 150 ° C 10 TA = 150 ° C<br>TA = 125 ° C TA = 125 ° C<br>1 TA = 85 ° C 1 TA = 85 ° C<br>TA = 25 ° C TA = 25 ° C<br>0.1 TA = −55 ° C 0.1 TA = −55 ° C<br>0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E−01 1.E−01<br>TA = 175 ° C<br>1.E−02 TA = 175 ° C 1.E−02 TA = 150 ° C<br>T A  = 150 ° C<br>1.E−03 1.E−03 TA = 125 ° C<br>1.E−04 TA = 125 ° C 1.E−04<br>TA = 85 ° C<br>1.E−05 TA = 85 ° C 1.E−05<br>1.E−06 TA = 25 ° C 1.E−06 TA = 25 ° C<br>1.E−07 1.E−07<br>10 20 30 40 50 60 10 20 30 40 50 60<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>1000 4<br>T J  = 25 ° C R � JL = 24.4 ° C/W<br>DC<br>3<br>SQUARE WAVE<br>100 2<br>1<br>10 0<br>0.1 1 10 100 110 120 130 140 150 160 170 180<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>, AVERAGE FORWARD CURRENT (A)<br>C, JUNCTION CAPACITANCE (pF)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating** 

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**3** 

**NRVTS2H60ESF, NRVTSM260EV2** 

## **TYPICAL CHARACTERISTICS** 

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14<br>IPK/IAV = 20 IPK/IAV = 10<br>12<br>10<br>8<br>6<br>Square Wave<br>IPK/IAV = 5<br>4<br>2 DC<br>0<br>0 1 2 3<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 7. Forward Power Dissipation<br>100<br>50% Duty Cycle<br>20%<br>10%<br>10<br>5%<br>2%<br>1%<br>1<br>Single Pulse<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (s)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 8. Thermal Characteristics** 

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## **NRVTS2H60ESF, NRVTSM260EV2** 

# **PACKAGE DIMENSIONS** 

## **SOD−123FL** CASE 498 ISSUE D 

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E � NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.<br>4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION<br>D OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A1 A 0.90 0.95 0.98 0.035 0.037 0.039<br>POLARITY INDICATOR<br>OPTIONAL AS NEEDED A A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 0.70 0.90 1.10 0.028 0.035 0.043<br>TOP VIEW END VIEW c 0.10 0.15 0.20 0.004 0.006 0.008<br>D 1.50 1.65 1.80 0.059 0.065 0.071<br>E 2.50 2.70 2.90 0.098 0.106 0.114<br>� L 0.55 0.75 0.95 0.022 0.030 0.037<br>H E 3.40 3.60 3.80 0.134 0.142 0.150<br>� 0° − 8° 0° − 8°<br>RECOMMENDED<br>HE c SOLDERING FOOTPRINT*<br>SIDE VIEW<br>4.20<br>2X<br>2X L 1.25<br>ÉÉÉ ÉÉÉ<br>2X b 2X 1.22 ÉÉÉ ÉÉÉ<br>ÉÉÉ ÉÉÉ<br>BOTTOM VIEW<br>ÉÉÉ ÉÉÉ<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**NRVTS2H60ESF, NRVTSM260EV2** 

## **PACKAGE DIMENSIONS** 

**POWERMITE** CASE 457−04 ISSUE F 

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NOTES:<br>−A− C F 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>J 0.08 (0.003) M T B S C [S] 2. CONTROLLING DIMENSION: MILLIMETER.<br>3. DIMENSIONS A AND B DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS. MOLD<br>S FLASH, PROTRUSIONS OR GATE BURRS SHALL<br>NOT EXCEED 0.15 (0.006) PER SIDE.<br>MILLIMETERS INCHES<br>PIN 1 DIM MIN MAX MIN MAX<br>−B− A 1.75 2.05 0.069 0.081<br>B 1.75 2.18 0.069 0.086<br>K C 0.85 1.15 0.033 0.045<br>D 0.40 0.69 0.016 0.027<br>PIN 2<br>F 0.70 1.00 0.028 0.039<br>H -0.05 +0.10 -0.002 +0.004<br>J 0.10 0.25 0.004 0.010<br>R K 3.60 3.90 0.142 0.154<br>L L 0.50 0.80 0.020 0.031<br>ii cia R 1.20 1.50 0.047 0.059<br>S _ 0.50 REF 0.019 REF<br>J<br>H D<br>pf. −T− 0.08 (0.003) M T B S C [S]<br>SOLDERING FOOTPRINT*<br>0.635<br>0.025<br>2.67<br>0.105 0.762<br>0.030<br>— -<br>2.54 1.27<br>0.100 0.050<br>ih<br>SCALE 10:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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