NRVTS2H60ESFT1G

**DATA SHEET www.onsemi.com** 

## Very Low Forward Voltage Trench-based Schottky Rectifier 

## NRVTS2H60ESF, NRVTSM260EV2 

## **TRENCH SCHOTTKY RECTIFIER 2.0 AMPERES 60 VOLTS** 

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## **Features** 

- Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage 

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SOD−123FL POWERMITE<br>CASE 498 CASE 457<br>**----- End of picture text -----**<br>


- Fast Switching with Exceptional Temperature Stability 

- Low Power Loss and Lower Operating Temperature 

- Higher Efficiency for Achieving Regulatory Compliance 

- Low Thermal Resistance 

- High Surge Capability 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MARKING DIAGRAMs** 

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2H6M � M<br>� 1 2H6 � 2<br>2H6 = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **Mechanical Characteristics:** 

- Case: Molded Epoxy 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight: 11.7 mg (Approximately) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds 

- MSL 1 

## **Typical Applications** 

- Switching Power Supplies including Compact Adapters and Flat Panel Display 

- High Frequency and DC−DC Converters 

- Freewheeling and OR−ing diodes 

- Reverse Battery Protection 

- Instrumentation 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NRVTS2H60ESFT1G|SOD−123FL<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|NRVTS2H60ESFT3G|SOD−123FL<br>(Pb−Free)|10,000 /<br>Tape & Reel|
|NRVTSM260EV2T1G|Powermite<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|NRVTSM260EV2T3G|Powermite<br>(Pb−Free)|12,000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2017 **December, 2021 − Rev. 3** 

**NRVTS2H60ESF/D** 

**NRVTS2H60ESF, NRVTSM260EV2** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|60|V|
|Average Rectified Forward Current<br>(TL= 125°C)|IO|2.0|A|
|Peak Repetitive Forward Current<br>(Square Wave, 20 kHz, TL= 139°C)|IFRM|4.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Storage and Operating Junction Temperature Range (Note 1)|Tstg, TJ|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|**SOD−123FL**||||
|Thermal Resistance, Junction−to−Lead (Note 2)|�JCL|24.4|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|85|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 3)|R�JA|330|°C/W|
|**POWERMITE**||||
|Thermal Resistance, Junction−to−Lead (Note 2)|�JCL|8.6|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|80|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 3)|R�JA|237|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 4)<br>(IF= 1.0 A, TJ= 25°C)<br>(IF= 2.0 A, TJ= 25°C)<br>(IF= 1.0 A, TJ= 125°C)<br>(IF= 2.0 A, TJ= 125°C)|VF|0.55<br>0.65<br>0.47<br>0.58|V|
|Maximum Instantaneous Reverse Current (Note 4)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|IR|12<br>3|�A<br>mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Mounted with 700 mm[2] copper pad size (Approximately 1 in[2] ) 1 oz FR4 Board. 

3. Mounted with pad size approximately 20 mm[2] copper, 1 oz FR4 Board. 

4. Pulse Test: Pulse Width ≤ 380 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**NRVTS2H60ESF, NRVTSM260EV2** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>TA = 175 ° C T A  = 175 ° C<br>10 TA = 150 ° C 10 TA = 150 ° C<br>TA = 125 ° C TA = 125 ° C<br>1 TA = 85 ° C 1 TA = 85 ° C<br>TA = 25 ° C TA = 25 ° C<br>0.1 TA = −55 ° C 0.1 TA = −55 ° C<br>0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E−01 1.E−01<br>TA = 175 ° C<br>1.E−02 TA = 175 ° C 1.E−02 TA = 150 ° C<br>T A  = 150 ° C<br>1.E−03 1.E−03 TA = 125 ° C<br>1.E−04 TA = 125 ° C 1.E−04<br>TA = 85 ° C<br>1.E−05 TA = 85 ° C 1.E−05<br>1.E−06 TA = 25 ° C 1.E−06 TA = 25 ° C<br>1.E−07 1.E−07<br>10 20 30 40 50 60 10 20 30 40 50 60<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>1000 4<br>TJ = 25 ° C R � JL = 24.4 = 24.4 ° C/W<br>DC<br>3<br>SQUARE WAVE<br>100 2<br>1<br>10 0<br>0.1 1 10 100 110 120 130 140 150 160 170 180<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (C, CASE TEMPERATURE (, CASE TEMPERATURE ( ° C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>, AVERAGE FORWARD CURRENT (A)<br>C, JUNCTION CAPACITANCE (pF)<br>IF(AV)F(AV)<br>**----- End of picture text -----**<br>


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4<br>R � JL = 24.4 = 24.4 ° C/W<br>DC<br>3<br>SQUARE WAVE<br>2<br>1<br>0<br>100 110 120 130 140 150 160 170 180<br>TC, CASE TEMPERATURE (C, CASE TEMPERATURE (, CASE TEMPERATURE ( ° C)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)F(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating** 

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**NRVTS2H60ESF, NRVTSM260EV2** 

## **TYPICAL CHARACTERISTICS** 

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14 16<br>IPK/IAV = 20 IPK/IAV = 10 TJ = 175 ° C<br>12 14 R � JA = 80 ° C/W<br>Square Wave<br>12<br>10 D = 0.2<br>10<br>8<br>D = 0.3<br>8<br>6<br>IPK/IAV = 5 Square Wave 6 D = 0.5<br>4<br>4<br>DC<br>2 DC<br>2<br>0 0<br>0 1 2 3 25 40 55 70 85 100 115 130 145 160 175<br>IF(AV), AVERAGE FORWARD CURRENT (A)F(AV), AVERAGE FORWARD CURRENT (A), AVERAGE FORWARD CURRENT (A) TA, AMBIENT TEMPERATURE ( ° C)<br>, AVERAGE FORWARD<br>PF(AV) POWER DISSIPATION (W) , PEAK FORWARD CURRENT (A)IF(PK)<br>**----- End of picture text -----**<br>


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IF(AV), AVERAGE FORWARD CURRENT (A)F(AV), AVERAGE FORWARD CURRENT (A), AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


**Figure 8. Forward Current Derating of Ambient Temperature** 

**Figure 7. Forward Power Dissipation** 

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30<br>28 TJ = 175 ° C<br>26 �� JC = 8.6 ° C/W<br>24<br>22<br>20<br>18<br>16 Square Wave<br>14 (Duty = 0.5)<br>12 DC<br>10<br>8<br>6<br>4<br>2<br>0<br>25 40 55 70 85 100 115 130 145 160 175<br>TC, CASE TEMPERATURE ( ° C)<br>, PEAK FORWARD CURRENT (A)<br>IF(PK)<br>**----- End of picture text -----**<br>


**Figure 9. Forward Current Derating of Case Temperature** 

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100<br>50% Duty Cycle<br>20%<br>10%<br>10<br>5%<br>2%<br>1%<br>1<br>Single Pulse<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (s)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Characteristics** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **POWERMITE 1.90x1.96x1.00** 

CASE 457 ISSUE H 

DATE 16 MAY 2025 

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GENERIC<br>MARKING DIAGRAMS*<br>M M<br>1 2 1 2<br>XXX XXX<br>STYLE 1:<br>i= =<br>PIN 1.<br>STYLE 1 STYLE 2 2.<br>M<br>1 2<br>XXX<br>XXX = Specific Device Code<br>M = Date Code<br>STYLE 3 = Pb−Free Package<br>DOCUMENT NUMBER: 98ASB14853C<br>DESCRIPTION: POWERMITE 1.90x1.96x1.00<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3:<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>PIN 1. CATHODE PIN 1. ANODE OR CATHODE PIN 1. ANODE<br>2. ANODE 2. CATHODE OR ANODE 2. CATHODE<br>(BI−DIRECTIONAL)<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOD−123−2 1.65x2.70x0.90** CASE 498 ISSUE E 

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DATE 22 AUG 2023<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>XXXM<br>XXX = Specific Device Code<br>M = Date Code<br>. = Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

## **DOCUMENT NUMBER: 98AON11184D DESCRIPTION: SOD−123−2 1.65x2.70x0.90** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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