NRVTS260ESFT3G
Schottky Rectifier, 60 V, 2 A, Single, SOD-123FL, 2 Pins, 650 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-123FL
- Diode Configuration: Single
- Forward Voltage Max: 650mV
- Forward Surge Current: 50A
- Average Forward Current: 2A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 60V
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 0.077 € |
| Current stock | 10+ |
| Lead time | 30 days |
## NTS260ESF, NRVTS260ESF ## Very Low Forward Voltage Trench-based Schottky Rectifier ## **Features** **www.onsemi.com** - Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability **TRENCH SCHOTTKY** **RECTIFIER** Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance **2.0 AMPERES** Low Thermal Resistance **60 VOLTS** High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 ~~We~~ Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **SOD−123FL** wee **CASE 498 Mechanical Characteristics:** Case: Molded Epoxy AN SJ ~~9% eo~~ K ~~oe~~ **MARKING DIAGRAM** Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 11.7 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: OA ~~s"~~ AACM 260 C Maximum for 10 Seconds MSL 1 G RScor ql) 7p AAC = Specific Device Code **Typical Applications** M = Date Code Switching Power Supplies including Compact Adapters and Flat = Pb−Free Package Panel Display (Note: Microdot may be in either location) High Frequency and DC−DC Converters dv ConorWOW cS ~~|~~ Freewheeling and OR−ing diodes sO ME ~~rs~~ **ORDERING INFORMATION** - Reverse Battery Protection - Instrumentation |**Device**|**Package**|**Shipping**†| |---|---|---| |NTS260ESFT3G|SOD−123FL<br>(Pb−Free)|10,000/<br>Tape & Reel| |NRVTS260ESFT3G|SOD−123FL<br>(Pb−Free)|10,000/<br>Tape & Reel| |NTS260ESFT1G|SOD−123FL<br>(Pb−Free)|3,000/<br>Tape & Reel| |NRVTS260ESFT1G|SOD−123FL<br>(Pb−Free)|3,000/<br>Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **NTS260ESF/D** **1** Semiconductor Components Industries, LLC, 2016 **May, 2025 − Rev. 5** **NTS260ESF, NRVTS260ESF** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|60|V| |Average Rectified Forward Current<br>(TL= 128C)|IO|2.0|A| |Peak Repetitive Forward Current<br>(Square Wave, 20 kHz, TL= 137C)|IFRM|4.0|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A| |Storage and Operating Junction Temperature Range (Note 1)|Tstg, TJ|−65 to +175|C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. |<br>should not be assumed, damage may occur and reliability may be affected.<br>1. The heat generated must be less than the thermal conductivity from<br>JtitAbit dP/dT1/R|||| |---|---|---|---| |uncon−o−men:DJ<�JA.<br>**THERMAL CHARACTERISTICS**|||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction−to−Lead (Note 2)|�JCL|24.4|C/W| |Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|85|C/W| |Thermal Resistance, Junction−to−Ambient (Note 3)|R�JA|330|C/W| |**ELECTRICAL CHARACTERISTICS**|||| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 4)<br>(IF= 1.0 A, TJ= 25C)<br>(IF= 2.0 A, TJ= 25C)<br>(IF= 1.0 A, TJ= 125C)<br>(IF= 2.0 A, TJ= 125C)|VF|0.55<br>0.65<br>0.47<br>0.58|V| |Maximum Instantaneous Reverse Current (Note 4)<br>(Rated dc Voltage, TJ= 25C)<br>(Rated dc Voltage, TJ= 125C)|IR|12<br>3|�A<br>mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm[2] copper pad size (Approximately 1 in[2] ) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm[2] copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width 380 � s, Duty Cycle 2.0%. **==> picture [34 x 31] intentionally omitted <==** **www.onsemi.com** **2** **NTS260ESF, NRVTS260ESF** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 591] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>TA = 175C T A = 175C<br>10 TA = 150C 10 TA = 150C<br>TA = 125 C TA = 125 C<br>1 TA = 85C 1 TA = 85C<br>TA = 25 C TA = 25 C<br>0.1 TA = −55C 0.1 TA = −55C<br>0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E−01 1.E−01<br>TA = 175C<br>1.E−02 TA = 175C 1.E−02 TA = 150C<br>T A = 150C<br>1.E−03 1.E−03 TA = 125C<br>1.E−04 TA = 125 C 1.E−04<br>TA = 85C<br>1.E−05 TA = 85 C 1.E−05<br>1.E−06 TA = 25C 1.E−06 TA = 25 C<br>1.E−07 1.E−07<br>10 20 30 40 50 60 10 20 30 40 50 60<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>1000 4<br>TJ = 25 C DC R � JL = 24.4C/W = 24.4C/WC/WC/W<br>3<br>SQUARE WAVE<br>100 2<br>1<br>10 0<br>0.1 1 10 100 105110115120125130135140145150155160165170175110115120125130135140145150155160165170175160165170175165170175175<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (C)C, CASE TEMPERATURE (C), CASE TEMPERATURE (C)C)C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>, AVERAGE FORWARD CURRENT (A)<br>C, JUNCTION CAPACITANCE (pF)<br>IF(AV)F(AV)<br>**----- End of picture text -----**<br> **==> picture [236 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>R � JL = 24.4C/W = 24.4C/WC/WC/W<br>DC<br>3<br>SQUARE WAVE<br>2<br>1<br>0<br>100 105110115120125130135140145150155160165170175110115120125130135140145150155160165170175160165170175165170175175<br>TC, CASE TEMPERATURE (C)C, CASE TEMPERATURE (C), CASE TEMPERATURE (C)C)C)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)F(AV)<br>**----- End of picture text -----**<br> **Figure 5. Typical Junction Capacitance** **Figure 6. Current Derating** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOD−123−2 1.65x2.70x0.90** CASE 498 ISSUE E **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 22 AUG 2023<br>**----- End of picture text -----**<br> **==> picture [103 x 101] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM*<br>XXXM<br>XXX = Specific Device Code<br>M = Date Code<br>. = Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER: 98AON11184D DESCRIPTION: SOD−123−2 1.65x2.70x0.90** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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