NRVTS245ESFT1G

## NRVTS245ESF 

## Very Low Forward Voltage Trench-based Schottky Rectifier 

## **Features** 

- Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage 

- Fast Switching with Exceptional Temperature Stability 

- Low Power Loss and Lower Operating Temperature 

- Higher Efficiency for Achieving Regulatory Compliance 

- Low Thermal Resistance 

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**TRENCH SCHOTTKY RECTIFIER 2.0 AMPERES 45 VOLTS** 

- High Surge Capability 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These are Pb−Free and Halide−Free Devices 

## **Mechanical Characteristics:** 

- Case: Molded Epoxy 

**SOD−123FL CASE 498 PLASTIC** 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight: 11.7 mg (Approximately) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds 

- MSL 1 

## **Typical Applications** 

- Switching Power Supplies including Compact Adapters and Flat Panel Display 

- High Frequency and DC−DC Converters 

- Freewheeling and OR−ing diodes 

## **MARKING DIAGRAM** 

2AEM ql. 2AE = Specific Device Code M = Date Code = Pb−Free Package 

(Note: Microdot may be in either location) 

- Reverse Battery Protection 

- Instrumentation 

- Automotive LED Lighting 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] NRVTS245ESFT1G SOD−123 3,000/ (Pb−Free) Tape & Reel NRVTS245ESFT3G SOD−123 10,000/ (Pb−Free) Tape & Reel ~~I~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NRVTS245ESF/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **September, 2014 − Rev. 0** 

**NRVTS245ESF** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|45|V|
|Average Rectified Forward Current<br>(TL= 148°C)|IO|2.0|A|
|Peak Repetitive Forward Current<br>(Square Wave, 20 kHz, TL= 143°C)|IFRM|4.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Storage and Operating Junction Temperature Range (Note 1)|Tstg, TJ|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Note 2)|�JCL|23|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|85|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 3)|R�JA|330|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 4)<br>(IF= 2.0 A, TJ= 25°C)<br>(IF= 2.0 A, TJ= 125°C)|VF|0.65<br>0.58|V|
|Maximum Instantaneous Reverse Current (Note 4)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|IR|75<br>3|�A<br>mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Mounted with 700 mm[2] copper pad size (Approximately 1 in[2] ) 1 oz FR4 Board. 

3. Mounted with pad size approximately 20 mm[2] copper, 1 oz FR4 Board. 

4. Pulse Test: Pulse Width ≤ 380 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**NRVTS245ESF** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100 100<br>TA = 150 ° C TA = 175 ° C T A  = 175 ° C<br>10 10 T A  = 150 ° C<br>TA = 125 ° C<br>T A  = 125 ° C<br>1 1<br>TA = 25 ° C TA = 25 ° C<br>TA = −55 ° C TA = −55 ° C<br>0.1 0.1<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E−02 1.E−01<br>TA = 175 ° C TA = 175 ° C<br>1.E−03 TA = 150 ° C 1.E−02 TA = 150 ° C<br>TA = 125 ° C<br>1.E−04 1.E−03 TA = 125 ° C<br>TA = 90 ° C<br>T A  = 90 ° C<br>1.E−05 1.E−04<br>TA = 25 ° C TA = 25 ° C<br>1.E−06 1.E−05<br>1.E−07 1.E−06<br>5 15 25 35 45 5 15 25 35 45<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>1000 4<br>TJ = 25 ° C<br>DC<br>3<br>Square Wave<br>100 2<br>1<br>R � JL = 24.4 ° C/W<br>10 0<br>0.1 1 10 10 30 50 70 90 110 130 150 170<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>, AVERAGE FORWARD CURRENT (A)<br>C, JUNCTION CAPACITANCE (pF)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating** 

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**3** 

**NRVTS245ESF** 

## **TYPICAL CHARACTERISTICS** 

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4<br>IPK/IAV IPK/IAV = 10<br>= 20<br>3<br>IPK/IAV = 5<br>2<br>Square Wave<br>1 DC<br>0<br>0 0.5 1.0 1.5 2.0 2.5<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Forward Power Dissipation** 

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100<br>50% Duty Cycle<br>20%<br>10%<br>10<br>5%<br>2%<br>1%<br>1<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (s)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 8. Thermal Characteristics** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOD−123FL<br>CASE 498<br>ISSUE D<br>**----- End of picture text -----**<br>


DATE 10 MAY 2013 

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SCALE 4:1<br>E<br>‘ D a r £<br>1 2<br>A1<br>POLARITY INDICATOR<br>OPTIONAL AS NEEDED A<br>TOP VIEW END VIEW<br>_ “<br>= 4 HE c<br>SIDE VIEW<br>2X L<br>2X b<br>“ c e<br>BOTTOM VIEW<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>4.20<br>2X<br>1.25<br>ÉÉÉ ÉÉÉÉ<br>— - =<br>2X 1.22 ÉÉÉ ÉÉÉÉ<br>ÉÉÉ ÉÉÉÉ<br>(A<br>ÉÉÉ ÉÉÉÉ<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: MILLIMETER. 

3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 

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4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION<br>OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.90 0.95 0.98 0.035 0.037 0.039<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 0.70 0.90 1.10 0.028 0.035 0.043<br>c 0.10 0.15 0.20 0.004 0.006 0.008<br>D 1.50 1.65 1.80 0.059 0.065 0.071<br>E 2.50 2.70 2.90 0.098 0.106 0.114<br>L 0.55 0.75 0.95 0.022 0.030 0.037<br>H E 3.40 3.60 3.80 0.134 0.142 0.150<br>0° − 8° 0° − 8°<br>GENERIC<br>SS MARKING DIAGRAM*<br>XXXM<br>XXX = Specific Device Code<br>M = Date Code<br>— = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON11184D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOD−123FL PAGE 1 OF 1** ~~a~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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