NRVTS1045EMFST1G

## NTS1045EMFS, NRVTS1045EMFS 

## Exceptionally Low Leakage Trench-based Schottky Rectifier 

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## **Features** 

- Fine Lithography Trench−based Schottky Technology for Very Low Leakage 

- Fast Switching with Exceptional Temperature Stability 

- Low Power Loss and Lower Operating Temperature 

- Higher Efficiency for Achieving Regulatory Compliance 

**SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 45 VOLTS** 

- Low Thermal Resistance 

- High Surge Capability 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These are Pb−Free and Halide−Free Devices 

## **Typical Applications** 

- Switching Power Supplies including Wireless, Smartphone and Notebook Adapters 

- High Frequency and DC−DC Converters 

- Freewheeling and OR−ing diodes 

- Reverse Battery Protection 

- Instrumentation 

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1,2,3 5,6<br>MARKING<br>DIAGRAM<br>A C<br>°<br>1 A TE1045<br>AYWWZZ<br>SO−8 FLAT LEAD A<br>CASE 488AA Not Used C<br>STYLE 2<br>TE1045 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>ZZ = Lot Traceability<br>**----- End of picture text -----**<br>


## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. 

- Lead Finish: 100% Matte Sn (Tin) 

- Lead and Mounting SurfaceTemperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NTS1045EMFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel|
|NTS1045EMFST3G|SO−8 FL<br>(Pb−Free)|5000 /<br>Tape & Reel|
|NRVTS1045EMFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel|
|NRVTS1045EMFST3G|SO−8 FL<br>(Pb−Free)|5000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NTS1045EMFS/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **July, 2014 − Rev. 0** 

**NTS1045EMFS, NRVTS1045EMFS** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|45|V|
|Average Rectified Forward Current<br>(Rated VR, TC= 166°C)|IF(AV)|10|A|
|Peak Repetitive Forward Current,<br>(Rated VR, Square Wave, 20 kHz, TC= 162°C)|IFRM|20|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|210|A|
|Storage Temperature Range|Tstg|−65 to +150|°C|
|Operating Junction Temperature|TJ|−55 to +150|°C|
|Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)|EAS|100|mJ|
|ESD Rating (Human Body Model)||3B||
|ESD Rating (Machine Model)||M4||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case, Steady State<br>(Assumes 600 mm21 oz. copper bond pad, on a FR4 board)|RθJC|−|2.0|°C/W|
|**ELECTRICAL CHARACTERISTICS**|||||
|Instantaneous Forward Voltage (Note 1)<br>(iF= 5.0 Amps, TJ= 25°C)<br>(iF= 10 Amps, TJ= 25°C)<br>(iF= 5.0 Amps, TJ= 125°C)<br>(iF= 10 Amps, TJ= 125°C)|vF|0.42<br>0.48<br>0.34<br>0.41|−<br>0.60<br>−<br>0.53|V|
|Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|iR|20<br>7.0|50<br>20|�A<br>mA|
|Diode Capacitance<br>(Rated dc Voltage, TJ= 25°C, f = 1 MHz)|Cd|300||pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**NTS1045EMFS, NRVTS1045EMFS** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>T A  = 175 ° C TA = 175 ° C<br>10 TA = 150 ° C 10 TA = 150 ° C<br>T A  = 125 ° C TA = 125 ° C<br>1 TA = 25 ° C 1 TA = 25 ° C<br>TA = −55 ° C TA = −55 ° C<br>0.1 0.1<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E+00 1.E+00<br>T A  = 175 ° C<br>1.E−01 TA = 175 ° C 1.E−01 TA = 150 ° C<br>1.E−02 T A  = 150 ° C 1.E−02 TA = 125 ° C<br>1.E−03 TA = 125 ° C 1.E−03<br>1.E−04 1.E−04<br>TA = 25 ° C<br>1.E−05 TA = 25 ° C 1.E−05<br>1.E−06 1.E−06<br>0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Characteristics** 

**Figure 4. Maximum Reverse Characteristics** 

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10,000 20<br>TJ = 25 ° C DC<br>15<br>Square Wave<br>1000 10<br>5<br>R � JC = 2.1 ° C/W<br>100 0<br>1 10 50 100 110 120 130 140 150 160 170<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>C, JUNCTION CAPACITANCE (pF) , AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating** 

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**3** 

**NTS1045EMFS, NRVTS1045EMFS** 

## **TYPICAL CHARACTERISTICS** 

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22<br>20 IPK/IAV IPK/IAV = 10 I PK /I AV  = 5<br>= 20<br>18<br>16<br>14 T J  = 175 ° C<br>12<br>10<br>Square Wave<br>8<br>6 dc<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 7. Forward Power Dissipation<br>100<br>50% (DUTY CYCLE)<br>20%<br>10<br>10%<br>5.0%<br>2.0%<br>1<br>1.0% Assumes 25 ° C ambient and soldered to<br>a 600 mm [2]  − oz copper pad on PCB<br>0.1<br>SINGLE PULSE<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (s)<br>Figure 8. Typical Thermal Characteristics<br>10<br>1 50% (DUTY CYCLE)<br>20%<br>10%<br>0.1 5.0% Assumes 25 ° C ambient and soldered to<br>2.0% a 600 mm [2]  − oz copper pad on PCB<br>1.0%<br>SINGLE PULSE<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (s)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>R(t) (C/W)<br>R(t) (C/W)<br>**----- End of picture text -----**<br>


**Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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DFN5 5x6, 1.27P<br>(SO−8FL)<br>CASE 488AA<br>+<br>1 ISSUE N<br>SCALE 2:1 DATE 25 JUN 2018<br>2 X NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>D = A o 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>fet = A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>c 0.23 0.28 0.33<br>E D 5.00 5.15 5.30<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.00 6.15 6.30<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.575 0.71<br>C K 1.20 1.35 1.50<br>SEATING L 0.51 0.575 0.71<br>0.10 C DETAIL A PLANE L1 0.125 REF<br>M 3.00 3.40 3.80<br>~. | A —— 0  −−− 12<br>0.10 C GENERIC<br>Sy SIDE VIEW SS MARKING DIAGRAM*<br>DETAIL A<br>1<br>8X b XXXXXX<br>0.10 C A B e/2 AYWZZ<br>0.05 c<br>L e<br>1 4 XXXXXX = Specific Device Code<br>P o {IF S<br>K A = Assembly Location<br>Y = Year<br>RECOMMENDED W = Work Week<br>E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability<br>(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to<br>2X device data sheet for actual part marking.<br>a<br>1.530 Pb−Free indicator, “G” or microdot “ ”,<br>G = D2 2X may not follow the Generic Marking.may or may not be present. Some products<br>BOTTOM VIEW 0.475<br>an 7a 3.200 |<br>4.530<br>| |<br>STYLE 1: STYLE 2: 2X 1.330<br>PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905<br> 3. SOURCE  3. ANODE 1<br> 4. GATE  4. NO CONNECT<br> 5. DRAIN  5. CATHODE 0.965<br>“ 4X g o l a<br>1.000 1.270<br>4X 0.750 one PITCH<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON14036D Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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