NRVS3BB
Standard Recovery Diode, 100 V, 3 A, Single, 1.15 V, 1.5 µs, 80 A
- Manufacturer: ONSEMI
- Product type: Standard Recovery Rectifier Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Case Style: DO-214AA (SMB)
- Diode Configuration: Single
- Forward Voltage Max: 1.15V
- Forward Surge Current: 80A
- Reverse Recovery Time: 1.5µs
- Average Forward Current: 3A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.091 € |
| Current stock | 10+ |
| Lead time | 30 days |
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ## Rectifiers, Surface Mount 1 2 Cathode Anode ## S3AB-S3MB ## **Features** - Glass Passivated Chip Junction - High Surge Current Capacity - Low Forward Voltage: 1.15 V Maximum - UL Flammability 94V−0 Classification - MSL 1 per J−STD−020 - RoHS Compliant / Green Molding Compound - NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These are Pb−Free and Halide Free Devices **==> picture [173 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING<br>DIAGRAM<br>SMB ZYWW<br>CASE 403AF S3xB<br>Polarity<br>: Mark i<br>Z = Assembly Plant Code<br>Y = Year<br>WW = Work Week<br>S3xB = Specific Device Code<br>x = A, B, D, G, J, K, M<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 3 of this data sheet. NOTE: Some of the devices on this data sheet have been **DISCONTINUED** . Please refer to the table on page 3. **ABSOLUTE MAXIMUM RATINGS** Values are at TA = 25 ° C unless otherwise noted. |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**Values are at TA = 25A = 25= 25°C unless otherwise noted.|C unless otherwise noted.|C unless otherwise noted.|C unless otherwise noted.|C unless otherwise noted.|C unless otherwise noted.|C unless otherwise noted.|C unless otherwise noted.|| |---|---|---|---|---|---|---|---|---|---| |**Symbol**<br>~~ee~~<br>~~po~~|**Parameter**<br>~~ee~~|**Value**<br>~~ee~~|||||||**Unit**<br>~~ee~~| |||**S3AB**<br>~~ee~~|**S3BB**<br>~~ee~~|**S3DB**<br>~~ee~~|**S3GB**<br>~~ee~~|**S3JB**<br>~~ee~~|**S3KB**<br>~~ee~~|**S3MB**<br>~~ee~~|| |VRRM<br>~~po~~|Repetitive Peak Reverse Voltage|50|100|200|400|600|800|1000|V| |VRMS<br>~~po~~<br>~~po~~|RMS Reverse Voltage|35|70|140|280|420|560|700|V| |VR<br>~~po~~<br>~~po~~|DC Blocking Voltage<br>|50<br>|100<br>|200<br>|400<br>|600<br>|800<br>|1000<br>|A<br>| |IF(AV)<br>~~po~~<br>~~po~~|Average Forward Rectified Current<br>|3<br>|||||||A<br>| |IFSM<br>~~po~~|Peak Forward Surge Current: 8.3 ms Single<br>Half Sine−Wave Superimposed on Rated Load<br>|80<br>|||||||A<br>| |TJ<br>~~pf~~|Operating Junction Temperature Range<br>~~pf~~|−55 to 150<br>~~pf~~|||||||°C<br>~~pf~~| |TSTG<br>~~pO~~|Storage Temperature Range<br>~~pO~~|−55 to 150<br>~~pO~~|||||||°C<br>~~pO~~| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL CHARACTERISTICS** Values are at TA = 25 ° C unless otherwise noted. (Note 1) |**THERMAL CHARACTERISTICS**Values are at TA = 25A = 25= 25°C unless otherwise noted. (Note 1)||||| |---|---|---|---|---| |**Symbol**<br>**Parameter**<br>~~a~~||**Value**||**Unit**| |R JA<br>Typical Thermal Resistance, Junction−to−Ambient<br>~~a~~||148||°C/W| |JL<br>Typical Thermal Characteristics, Junction−to−Lead<br>14<br>°C/W<br>1. Device mounted on FR−4 PCB, board size = 76.2 mm x 114.3 mm per JESD51−3.<br>**ELECTRICAL CHARACTERISTICS**Values are at TA= 25°C unless otherwise noted.<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>~~aee~~||||| |VF<br>Instantaneous Forward Voltage (Note 2)<br>IF= 3 A<br>−<br>~~a~~<br>~~a~~<br>~~ee~~||−|1.15|V| |IR<br>Reverse Current at Rated VR<br>TJ= 25°C|−|−|10|A| |TJ= 125°C|−|−|250|| |trr<br>Reverse Recovery Time<br>IF= 0.5 A, IR= 1 A, Irr= 0.25 A<br>~~a~~|−|1.5|−|s| |CJ<br>Junction Capacitance<br>VR= 4 V, f = 1 MHz<br>~~a~~|−|40|−|pF| |Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product||||| |performance may not be indicated by the Electrical Characteristics if operated under different conditions.||||| |2. Pulse test with PW = 300 s, 1% duty cycle.||||| Publication Order Number: **S3MB/D** **1** © Semiconductor Components Industries, LLC, 2018 **June, 2024 − Rev. 5** **S3AB−S3MB** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [491 x 602] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5 100<br>TJ = 125 ° C<br>2.53 ITT) ESS<br>10<br>TON eS<br>2 ==<br>1.5<br>1<br>Tee =<br>1<br>0.5 T J = 25 ° C<br>UN e<br>pli} Resistive or inductive load EAC) E QS<br>0 re nee 0.1 a<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140<br>Lead Temperature ( C) Percent of Rated Peak Reverse Voltage (%)<br>Figure 1. Forward Current Derating Curve Figure 2. Typical Reverse Characteristics<br>100 100<br>8.3 ms Single Half Sine Wave<br>Mo dd ee ee ee ee<br>PSE ee<br>a ee el =<br>10<br>CoOPSE<br>I eee<br>CISC SSS<br>1<br>PTI PSU ez<br>Pulse Width = 300 s<br>10 0.1 TAI 1% Duty Cycle<br>ELAINE LUM) )©=6EBBEEET"=<br>1 10 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6<br>Number of Cycles at 60 Hz Forward Voltage (V)<br>Figure 3. Maximum Non−Repetitive Forward Figure 4. Typical Forward Characteristics<br>Surge Current<br>100<br>ee<br>pe<br>10<br>ll<br>f = 1.0 MHz<br>Vsig = 50 mVp−p<br>1 emall<br>1 10 100<br>Reverse Voltage (V)<br>A)<br>Average Forward Current (A) Instantaneous Reverse Current (<br>Peak Forward Surge Current (A) Instantaneous Forward Current (A)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **Figure 5. Typical Junction Capacitance** **www.onsemi.com 2** ~~Oo~~ **Share Feedback** Your Opinion Matters **S3AB−S3MB** ## **TEST CIRCUIT DIAGRAM** **==> picture [317 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> 50 100<br>Noninductive Noninductive trr<br>+0.5 A<br>(−)<br>DUT<br>(+) Pulse 0<br>50 Vdc Generator<br>(approx) (Note 4) −0.25 A<br>+ i<br>(−) 1 Oscilloscope<br>Non é (Note 3) (+)<br>Inductive<br>−1.0 A<br>**----- End of picture text -----**<br> **Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram** NOTES: 3. Rise Time = 7 ns max. Input Impedance = 1 M 22 pF 4. Rise Time = 10 ns max. Source Impedance = 50 22 pF ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Part Number**|**Device Code Marking**|**Package**|**Shipping**†| |NRVS3BB*|S3BB|SMB<br>(Pb−Free, Halide−Free)|3000 / Tape & Reel| |S3DB|S3DB||| |S3GB, NRVS3GB*|S3GB||| |S3JB, NRVS3JB*|S3JB||| |S3KB|S3KB||| |S3MB, NRVS3MB*|S3MB||| ## **DISCONTINUED** (Note 5) |S3AB, NRVS3AB*|S3AB|SMB<br>(Pb−Free, Halide−Free)|3000 / Tape & Reel| |---|---|---|---| |S3BB|S3BB||| |NRVS3DB*|S3DB||| |NRVS3KB*|S3KB||| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - *NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 5. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. **www.onsemi.com 3** ~~OO~~ **Share Feedback** Your Opinion Matters MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SMB** CASE 403AF ISSUE O DATE 31 AUG 2016 **==> picture [470 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> 5.60<br>B B 5.08 0.13 M C B A<br>2.50<br>3.95 2.20<br>3.30 B 1.91 2.20<br>4.70<br>4.75<br>B 4.05 LAND PATTERN RECOMMENDATION<br>A<br>**----- End of picture text -----**<br> **==> picture [478 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> 8 °<br>0 °<br>2.65 MAX<br>A<br>R0.15 4X<br>GAUGE<br>2.45<br>PLANE<br>1.90<br> 0.45<br>0.41<br>0.30 0.15<br>B 0.2030.050 0.05 0 − 8 °<br>C<br>2.15 1.60<br>1.65 0.13 M C B A 0.75<br>DETAIL A<br>SCALE 20 : 1<br>**----- End of picture text -----**<br> ## NOTES: - A. EXCEPT WHERE NOTED CONFORMS TO JEDEC DO214 VARIATION AA. - B DOES NOT COMPLY JEDEC STD. VALUE. - C. ALL DIMENSIONS ARE IN MILLIMETERS. - D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. - E. DIMENSION AND TOLERANCE AS PER ASME - Y14.5−1994. - F. LAND PATTERN STD. DIOM5336X240M. ## **DOCUMENT NUMBER: 98AON13441G DESCRIPTION: SMB** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2016 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at April 14, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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