NRVHP8H200MFDWFT1G

## NRVHP8H200MFD 

NRVHP8H200MFD Switch-Mode Power Rectifier This ultrafast rectifier in the dual flag SO−8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as **www.onsemi.com** common cathode, as common anode or in series as a function of board level layout. The exposed pad design provides low thermal resistance. **ULTRAFAST RECTIFIER** The clip attach design creates a package with very efficient die size to board area ratio. While thermal performance is nearly the same as the **8 AMPERES (4x2), 200 VOLTS** DPAK package height and board footprint are less than half. **Features** 1,2 7,8 • New Package Provides Capability of Inspection and Probe After 3,4 5,6 Board Mounting • Low Forward Voltage Drop • 175°C Operating Junction Temperature **MARKING DIAGRAM** • NRV Prefix for Automotive and Other Applications Requiring C1 C1 Unique Site and Control Change Requirements; AEC−Q101 1 A1 C1 Qualified and PPAP Capable **DFN8 5x6** A1 8H200M C1 **(SO8FL)** A2 AYWZZ C2 • These are Pb−Free and Halide−Free Devices **CASE 506BT** A2 C2 ~~:~~ C2 C2 **Mechanical Characteristics:** • Case: Epoxy, Molded 8H200M = Specific Device Code • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. AY = Assembly Location= Year • Lead Finish: 100% Matte Sn (Tin) W = Work Week • ZZ = Lot Traceability 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

## **ORDERING INFORMATION** 

## **Applications** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NRVHP8H200MFDT1G|DFN8<br>(Pb−Free)|1500 /<br>Tape & Reel|
|NRVHP8H200MFDT3G|DFN8<br>(Pb−Free)|5000 /<br>Tape & Reel|
|NRVHP8H200MFDWFT1G|DFN8<br>(Pb−Free)|1500 /<br>Tape & Reel|
|NRVHP8H200MFDWFT3G|DFN8<br>(Pb−Free)|5000 /<br>Tape & Reel|



- Excellent Alternative to DPAK in Space−Constrained Automotive Applications 

- Output Rectification in Switching Power Supplies 

- Freewheeling Diode used with Inductive Loads 

- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NRVHP8H200MFD/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **February, 2018 − Rev. 0** 

## **NRVHP8H200MFD** 

## **MAXIMUM RATINGS** (per diode unless noted) 

|**MAXIMUM RATINGS**(per diode unless noted)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V|
|Average Rectified Forward Current<br>(Rated VR, TC= 170°C)|IF(AV)|4.0|A|
|Peak Repetitive Forward Current,<br>(Rated VR, Square Wave, 20 kHz, TC= 169°C)|IFRM|8.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|80|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature|TJ|−55 to +175|°C|
|Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)|EAS|10|mJ|
|ESD Rating (Human Body Model)||3B||
|ESD Rating (Machine Model)||M4||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** (per diode unless noted) 

|**THERMAL CHARACTERISTICS**(per diode unless noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case, Steady State<br>(Assumes 600 mm21 oz. copper bond pad, on a FR4 board)|RθJC|−|3.4|°C/W|
|**ELECTRICAL CHARACTERISTICS**(per diode unless noted)|||||
|Instantaneous Forward Voltage (Note 1)<br>(iF= 4.0 Amps, TJ= 125°C)<br>(iF= 4.0 Amps, TJ= 25°C)<br>(iF= 6.0 Amps, TJ= 125°C)<br>(iF= 6.0 Amps, TJ= 25°C)<br>(iF= 8.0 Amps, TJ= 125°C)<br>(iF= 8.0 Amps, TJ= 25°C)|vF|0.76<br>0.88<br>0.80<br>0.92<br>0.94<br>0.83|0.85<br>1.0<br>0.88<br>1.05<br>1.1<br>0.91|V|
|Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 125°C)<br>(Rated dc Voltage, TJ= 25°C)|iR|1.00<br>0.012|50<br>0.5|�A|
|Reverse Recovery Time<br>IF= 4.0 A, VR= 30 V, dl/dt = 200 A/�s, TJ= 25°C|trr|17|30|ns|
|Reverse Recovery Time<br>IF= 4.0 A, VR= 30 V, dl/dt = 200 A/�s, TJ= 50°C|trr|20|50|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

**www.onsemi.com** 

**2** 

**NRVHP8H200MFD** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>TA = 175 ° C TA = 175 ° C<br>10 10<br>TA = 150 ° C<br>TA = 125 ° C TA = 150 ° C<br>1 TA = 85 ° C 1 TA = 125 ° C TA = 85 ° C<br>T A  = 25 ° C TA = 25 ° C<br>0.1 TA = −55 ° C 0.1 TA = −55 ° C<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E−03 1.E−02<br>1.E−04 TA = 175 ° C 1.E−03 TA = 175 ° C<br>1.E−05 TA = 150 ° C 1.E−04 TA = 150 ° C<br>1.E−06 T A  = 125 ° C 1.E−05 T A = 125 ° C<br>1.E−07 TA = 85 ° C 1.E−06 T A  = 85 ° C<br>TA = 25 ° C<br>1.E−08 TA = 25 ° C 1.E−07<br>1.E−09 TA = −55 ° C 1.E−08 T A  = −55 ° C<br>1.E−10 1.E−09<br>0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>1000 7<br>TJ = 25 ° C<br>6<br>DC<br>5<br>100<br>4 Square Wave<br>3<br>10<br>2<br>1<br>R � JC = 3.4 ° C/W<br>1 0<br>0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>C, JUNCTION CAPACITANCE (pF) , AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating per Device** 

**www.onsemi.com** 

**3** 

**NRVHP8H200MFD** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [246 x 177] intentionally omitted <==**

**----- Start of picture text -----**<br>
8<br>7 IPK/IAV = 20 I PK /I AV = 5<br>IPK/IAV = 10<br>6<br>5 Square Wave<br>4<br>DC<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Forward Power Dissipation** 

**==> picture [492 x 379] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>50% Duty Cycle<br>10<br>20%<br>10%<br>5%<br>1<br>2%<br>1%<br>0.1<br>Assumes 25 ° C ambient and soldered to<br>a 600 mm [2]  − oz copper pad on PCB<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 8. Typical Thermal Characteristics per Package<br>100<br>50% Duty Cycle<br>10 20%<br>10%<br>5%<br>1 2%<br>1%<br>0.1<br>Assumes 25 ° C ambient and soldered to<br>Single Pulse<br>a 600 mm [2]  − oz copper pad on PCB<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 9. Typical Thermal Characteristics per Diode** 

**www.onsemi.com** 

**4** 

**NRVHP8H200MFD** 

## **PACKAGE DIMENSIONS** 

**DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual)** CASE 506BT ISSUE E 

**==> picture [479 x 575] intentionally omitted <==**

**----- Start of picture text -----**<br>
2X<br>NOTES:<br>0.20 C 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>D A 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED<br>BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.<br>8 7 D16 5 B 2X 0.20 C 4.5. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELLAS THE TERMINALS.DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED<br>AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST<br>POINT ON THE PACKAGE BODY.<br>[  : a co 7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.<br>PIN ONE E1 E 4X MILLIMETERS<br>IDENTIFIER h DIM MIN MAX MAX<br>NOTE 7 ÉÉ A 0.90 −−− 1.10<br>A1 −−− −−− 0.05<br>ÉÉ c = A1 —— b 0.33 0.42 = 0.51<br>1 2 3 4 b1 0.33 0.42 0.51<br>c 0.20 −−− 0.33<br>TOP VIEW D 5.15 BSC<br>D1 4.70 4.90 5.10<br>0.10 C D2 3.90 4.10 4.30<br>A DETAIL A D3E 1.50 6.15 BSC1.70 1.90<br>0.10 C E1 5.70 5.90 6.10<br>NOTE 4 SIDE VIEW C [SEATING] PLANE E2e 3.90 1.27 BSC4.15 4.40<br>DETAIL A NOTE 6 G 0.45 0.55 0.65<br>h −−− −−− 12<br>D2 K 0.51 −−− −−−<br>K1 0.56 −−− −−−<br>D3 SOLDERING FOOTPRINT* L 0.48 0.61 0.71<br>4X L M 3.25 3.50 3.75<br>e 4.56 N 1.80 2.00 2.20<br>DETAIL B 1 4 K DETAIL BALTERNATE 0.758X 2.082X 0.562X<br>Set | U CONSTRUCTION 4| =<br>4X<br>N b1<br>M E2<br>4X<br>lallalt | 4.84 1.40 6.59<br>8 5 2.30<br>4X G 8X b 3.70<br>K1 0.10 C A B<br>a 0.05 C NOTE 3 ES<br>Ee BOTTOM VIEW |<br>0.70<br>4X 1.00 1.27<br>PITCH<br>ae 5.55<br>DIMENSION: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent<br>coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.<br>ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability<br>arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.<br>Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,<br>regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or<br>specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer<br>application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not<br>designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification<br>in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized<br>application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and<br>expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such<br>claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This<br>literature is subject to all applicable copyright laws and is not for resale in any manner.<br>**----- End of picture text -----**<br>


## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

◊ 

**N. American Technical Support** : 800−282−9855 Toll Free USA/Canada 

**Europe, Middle East and Africa Technical Support:** Phone: 421 33 790 2910 

**www.onsemi.com** 

**ON Semiconductor Website** : **www.onsemi.com Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 

**NRVHP8H200MFD/D** 

**5**