NRVBSS24T3G
Schottky Rectifier, 40 V, 2 A, Single, DO-214AA (SMB), 2 Pins, 500 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- Diode Mounting: Surface Mount
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.142 € |
| Current stock | 10+ |
| Lead time | 30 days |
SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G Surface Mount Schottky Power Rectifier **www.onsemi.com SMB Power Surface Mount Package SCHOTTKY BARRIER** These devices employ the Schottky Barrier principle in a **RECTIFIER** metal−to−silicon power rectifier. Features epitaxial construction with **2 AMPERES** oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling **20, 40 VOLTS** diodes and polarity protection diodes. **Features** • Compact Package with J−Bend Leads Ideal for Automated Handling • Highly Stable Oxide Passivated Junction **SMB** • Guardring for Over−Voltage Protection **CASE 403A** • Low Forward Voltage Drop • NRVB Prefix for Automotive and Other Applications Requiring **MARKING DIAGRAM** Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* AYWW • These Devices are Pb−Free and are RoHS Compliant SS2x ~~:~~ **Mechanical Characteristics** • Case: Molded Epoxy SS2x = Specific Device Code • Epoxy Meets UL 94 V−0 @ 0.125 in x = 2 ro 4 A = Assembly Location** • Weight: 95 mg (approximately) Y = Year • Cathode Polarity Band WW = Work Week = Pb−Free Package - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds (Note: Microdot may be in either location) - **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. - Available in 12 mm Tape, 2500 Units per 13 in Reel, Add “T3” Suffix to Part Number - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - ESD Ratings: Machine Model = C ## **ORDERING INFORMATION** ESD Ratings: Human Body Model = 3B |**Device**|**Package**|**Shipping**†| |---|---|---| |SS22T3G|SMB<br>(Pb−Free)|2500 /<br>Tape & Reel| |SS24T3G|SMB<br>(Pb−Free)|2500 /<br>Tape & Reel| |NRVBSS24T3G*|SMB<br>(Pb−Free)|2500 /<br>Tape & Reel| |SBRSS24T3G|SMB<br>(Pb−Free)|2500 /<br>Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **May, 2017 − Rev. 6** **SS24/D** **SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage<br>SS22<br>SS24|VRRM<br>VRWM<br>VR|20<br>40|V| |Average Rectified Forward Current<br>(At Rated VR, TL= 132°C)|IO|2.0|A| |Peak Repetitive Forward Current<br>(At Rated VR, Square Wave,<br>100 kHz, TC= 127°C)|IFRM|3.0|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|75|A| |Storage/Operating Case Temperature|Tstg, TC|−55 to +150|°C| |Operating Junction Temperature (Note 1)|TJ|−55 to +150|°C| |Voltage Rate of Change<br>(Rated VR, TJ= 25°C)|dv/dt|10,000|V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Value**||**Unit**| |Thermal Resistance,<br>Junction−to−Lead (Note 2)<br>Thermal Resistance,<br>Junction−to−Ambient (Note 3)|R�JL<br>R�JA|24<br>80||°C/W| |**ELECTRICAL CHARACTERISTICS**||||| |Maximum Instantaneous Forward Voltage (Note 4)<br>see Figure 2<br>(iF= 2.0 A)|vF|**TJ = 25**°**C**|**TJ = 125**°**C**|V| |||0.50|0.46|| |Maximum Instantaneous Reverse Current (Note 4)<br>see Figure 4<br>(VR= 40 V)|IR|**TJ = 25**°**C**|**TJ = 100**°**C**|mA| |||0.4|5.7|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with minimum recommended pad size, PC Board FR4. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 4. Pulse Test: Pulse Width ≤ 250 � s, Duty Cycle ≤ 2.0%. **www.onsemi.com** **2** **SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>10 10<br>TJ = 125°C 25°C TJ = 125°C<br>1.0 1.0<br>100°C 100°C<br>-�40°C<br>25°C<br>0.1 0.1<br>0.1 0.3 0.5 0.7 0.9 0.1 0.3 0.5 0.7 0.9<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>100E-3 100E-3<br>10E-3 TJ = 125°C 10E-3 TJ = 125°C<br>1.0E-3 1.0E-3 100°C<br>100°C<br>100E-6 100E-6<br>25°C<br>10E-6 25°C 10E-6<br>1.0E-6 1.0E-6<br>0 10 20 30 40 0 10 20 30<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) 40<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>3.5 1.2<br>R�JL = 24°C/W dc<br>3.0 dc 1.0 SQUARE WAVE<br>2.5 Ipk/Io = �<br>0.8<br>Ipk/Io = 5.0<br>2.0 SQUARE WAVE<br>0.6<br>1.5 Ipk/Io = 10<br>0.4 Ipk/Io = 20<br>1.0<br>0.2<br>0.5<br>0 0<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0 0.5 1.0 1.5 2.0<br>TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>iF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IO<br>PFO, AVERAGE POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br> **Figure 5. Current Derating** **==> picture [183 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 6. Forward Power Dissipation 2.5<br>**----- End of picture text -----**<br> **www.onsemi.com** **3** **SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G** **==> picture [491 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 125<br>TJ = 25°C Rtja = 24°C/W<br>115<br>43°C/W<br>105 63°C/W<br>100 95 80°C/W<br>85<br>93°C/W<br>75<br>10 65<br>0 5.0 10 15 20 25 30 35 40 0 5.0 10 15 20 25 30 35 40<br>VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS)<br>Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*<br>* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-<br>verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating<br>TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where<br>r(t) = thermal impedance under given conditions,<br>Pf = forward power dissipation, and<br>Pr = reverse power dissipation<br>This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,<br>where r(t) = Rthja. For other power applications further calculations must be performed.<br>1.0E+00<br>50%<br>20%<br>1.0E-01<br>10%<br>5.0%<br>1.0E-02 2.0%<br>1.0%<br>1.0E-03<br>Rtjl(t) = Rtjl * r(t)<br>1.0E-04<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>Figure 9. Thermal Response — Junction to Case<br>1.0E+00<br>50%<br>20%<br>1.0E-01<br>10%<br>5.0%<br>1.0E-02<br>2.0%<br>1.0E-03<br>1.0%<br>Rtjl(t) = Rtjl * r(t)<br>1.0E-04<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>°<br>C, CAPACITANCE (pF)<br>, DERATED OPERATING TEMPERATURE ( C)<br>TJ<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>T<br>R<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>T<br>R<br>**----- End of picture text -----**<br> **Figure 10. Thermal Response — Junction to Ambient** **www.onsemi.com** **4** **SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G** ## **PACKAGE DIMENSIONS** **==> picture [474 x 391] intentionally omitted <==** **----- Start of picture text -----**<br> SMB<br>CASE 403A−03<br>ISSUE J<br>HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.95 2.30 2.47 0.077 0.091 0.097<br>= > b D ——— A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>i: POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A<br>A1<br>eh L L1 c [Ho] S S<br>SOLDERING FOOTPRINT*<br>2.261<br>0.089<br>F<br>7 2.743<br>0.108<br>|<br>2.159<br>0.085 mm<br>SCALE 8:1<br>cs (—) inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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