NRVBS3200T3G-VF01

## Surface Mount Schottky Power Rectifier 

Surface Mount Schottky Power Rectifier . MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G conductor® **www.onsemi.com** This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay **SCHOTTKY BARRIER** contact. Ideally suited for low voltage, high frequency rectification, or **RECTIFIER** as free wheeling and polarity protection diodes in surface mount **3.0 AMPERE** applications where compact size and weight are critical to the system. **200 VOLTS Features** • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • Very High Blocking Voltage − 200 V **SMB** • 175°C Operating Junction Temperature°C Operating Junction TemperatureC Operating Junction Temperature **CASE 403A** • Guard−Ring for Stress Protection **MARKING DIAGRAM** • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AEC−Q101 AYWW Qualified and PPAP Capable* B320 • These are Pb−Free Devices ~~:~~ **Mechanical Charactersistics** B320 = Specific Device Code • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 A = Assembly Location** • Weight: 95 mg (approximately) Y = Year WW = Work Week • Finish: All External Surfaces Corrosion Resistant and Terminal = Pb−Free Package 

## MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G 

## **Features** 

- Small Compact Surface Mountable Package with J−Bend Leads 

- Rectangular Package for Automated Handling 

- Highly Stable Oxide Passivated Junction 

- Very High Blocking Voltage − 200 V 

- 175°C Operating Junction Temperature°C Operating Junction TemperatureC Operating Junction Temperature 

- Guard−Ring for Stress Protection 

- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AEC−Q101 Qualified and PPAP Capable* 

- These are Pb−Free Devices 

## **Mechanical Charactersistics** 

- Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 

- Weight: 95 mg (approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

(Note: Microdot may be in either location) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

      - **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. 

- Cathode Polarity Band 

- Device Meets MSL 1 Requirements 

- ESD Ratings: 

   - ♦ Machine Model = A 

## **ORDERING INFORMATION** 

- ♦ Human Body Model = 1C 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBRS3200T3G|SMB<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|NRVBS3200T3G*|SMB<br>(Pb−Free)|2,500 /<br>Tape & Reel|
|NRVBS3200NT3G*|NRVBS3200NT3G*<br>SMB<br>(Pb−Free)|2,500 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **MBRS3200T3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **December, 2019 − Rev. 8** 

**MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|200|V|
|Average Rectified Forward Current (TL= 150°C)|IF(AV)|3.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|100|A|
|Operating Junction Temperature|TJ|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Note 1)<br>Thermal Resistance, Junction−to−Ambient (Note 2)|R�JL<br>R�JA|13<br>62|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|Maximum Instantaneous Forward Voltage (Note 3)<br>(IF= 3.0 A, TJ= 25°C)<br>(IF= 4.0 A, TJ= 25°C)<br>(IF= 3.0 A, TJ= 150°C)|VF|0.84<br>0.86<br>0.59|V|
|Maximum Instantaneous Reverse Current (Note 3)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 150°C)|IR|1.0<br>5.0|mA<br>mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. 3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

**==> picture [486 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>TA = 150 ° C TA = 100 ° C TA = 150 ° C TA = 100 ° C<br>TA = 175 ° C TA = 25 ° C TA = 175 ° C TA = 25 ° C<br>10 10<br>1 1<br>0.1 0.1<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3<br>VF, FORWARD VOLTAGE (V) VF, FORWARD VOLTAGE (V)<br>, FORWARD CURRENT (A) , FORWARD CURRENT (A)<br>IF IF<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Maximum Forward Voltage** 

**www.onsemi.com** 

**2** 

**MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G** 

**==> picture [491 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0E−02 1.0E−02<br>TA = 175 ° C TA = 175 ° C<br>1.0E−03 T A  = 150 ° C 1.0E−03 T A = 150 ° C<br>1.0E−04 1.0E−04<br>1.0E−05 TA = 100 ° C 1.0E−05 TA = 100 ° C<br>1.0E−06 1.0E−06<br>1.0E−07 1.0E−07 TA = 25 ° C<br>1.0E−08 TA = 25 ° C 1.0E−08<br>1.0E−09 1.0E−09<br>0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>, REVERSE CURRENT (A)IR , REVERSE CURRENT (A)IR<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Current** 

**Figure 4. Maximum Reverse Current** 

**==> picture [491 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 7<br>R � JL = 13 ° C/W<br>TC = 25 ° C 6<br>f = 1 MHz dc<br>5<br>Typical Capacitance SQUARE WAVE<br>at 0 V = 209 V 4<br>100<br>3<br>2<br>1<br>10 0<br>0 20 40 60 80 100 120 140 160 180 200 80 90 100 110 120 130 140 150 160 170 180<br>VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE ( ° C)<br>C, CAPACITANCE (pF)<br>, AVERAGE FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


**Figure 5. Typical Capacitance** 

**Figure 6. Current Derating − Lead** 

**==> picture [237 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
5<br>4.5<br>4 SQUARE WAVE<br>3.5<br>dc<br>3<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>0 1 2 3 4 5 6<br>IO, AVERAGE FORWARD CURRENT (A)<br>, AVERAGE POWER DISSIPATION (W)<br>fo<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Forward Power Dissipation** 

**www.onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMB** CASE 403A−03 ISSUE J 

DATE 19 JUL 2012 

**==> picture [479 x 403] intentionally omitted <==**

**----- Start of picture text -----**<br>
SCALE 1:1 SCALE 1:1<br>Polarity Band Non−Polarity Band<br>HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.95 2.30 2.47 0.077 0.091 0.097<br>= b D SS A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>as POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A GENERIC<br>MARKING DIAGRAM*<br>A1<br>L L1 c<br>AYWW AYWW<br>XXXXX XXXXX<br>ae Qo (Lal.<br>SOLDERING FOOTPRINT*<br>Polarity Band Non−Polarity Band<br>2.261<br>0.089 XXXXX = Specific Device Code<br>—— A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>2.743<br>(Note: Microdot may be in either location)<br>0.108<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Lrt Pb−Free indicator, “G” or microdot “ ”, |<br>2.159 may or may not be present.<br>0.085 mm<br>SCALE 8:1<br>c— (—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**DOCUMENT NUMBER: 98ASB42669B DESCRIPTION: SMB** [[_ 

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