NRVBM140T3G

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## Surface Mount Schottky Power Rectifier 

## **POWERMITE**[] **Power Surface Mount Package** 

## MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G 

The Schottky POWERMITE[] employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the POWERMITE[] has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles,  1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. 

## **Features** 

- Low Profile-Maximum Height of 1.1 mm 

- Small Footprint-Footprint Area of 8.45 mm[2] 

- Low VF Provides Higher Efficiency and Extends Battery Life 

- Supplied in 12 mm Tape and Reel 

- Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink 

- ESD Ratings: 

   - Human Body Model = 3B (> 16000 V) 

   - Machine Model = C (> 400 V) 

- AEC−Q101 Qualified and PPAP Capable 

- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

- All Packages are Pb-Free* 

## **SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 40 VOLTS** 

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ANODE<br>CATHODE $<br>POWERMITE<br>CASE 457<br>PLASTIC<br>**----- End of picture text -----**<br>


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MARKING DIAGRAM<br>**----- End of picture text -----**<br>


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M<br>1 2<br>BCJ<br>[|<br>M = Date Code<br>BCJ = Device Code<br>= Pb - Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBRM140T1G|POWERMITE<br>(Pb-Free)|3,000 /<br>Tape & Reel|
|NRVBM140T1G|POWERMITE<br>(Pb-Free)|3,000 /<br>Tape & Reel|
|MBRM140T3G|POWERMITE<br>(Pb-Free)|12,000 /<br>Tape & Reel|



**DISCONTINUED** (Note 1) NRVBM140T3G POWERMITE 12,000 / (Pb - Free) Tape & Reel ~~ee ee~~ 

- For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

1. **DISCONTINUED:** This device is not available. Please contact your **onsemi** representative for information. The most current information on this device may be available on www.onsemi.com. 

## **Mechanical Characteristics:** 

- POWERMITE[] is JEDEC Registered as D0-216AA 

- Case: Molded Epoxy 

- Epoxy Meets UL 94 V-0 @ 0.125 in 

- Weight: 16.3 mg (Approximately) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260  C Maximum for 10 Seconds 

- *For additional information on our Pb - Free strategy and soldering details, please download  the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D 

Publication Order Number: **MBRM140/D** 

**1** 

 Semiconductor Components Industries, LLC, 2012 **July, 2025 − Rev. 5** 

**MAXIMUM RATINGS** 

## **MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**<br>~~es~~|**Symbol**<br>~~es~~|**Value**<br>~~es~~|**Unit**<br>~~es~~|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage<br>~~es~~|VRRM<br>VRWM<br>VR<br>~~es~~|40<br>~~es~~|V<br>~~es~~|
|Average Rectified Forward Current<br>(At Rated VR, TC= 110C)<br>~~es~~|IO<br>~~es~~|1.0<br>~~es~~|A<br>~~es~~|
|Peak Repetitive Forward Current<br>(At Rated VR, Square Wave, 100 kHz, TC= 110C)|IFRM|2.0|A|
|Non-Repetitive Peak Surge Current<br>(Non-Repetitive peak surge current, halfwave, single phase, 60 Hz)|IFSM|50|A|
|Storage Temperature|Tstg|−55 to 150|C|
|Operating Junction Temperature|TJ|−55 to 125|C|
|Voltage Rate of Change<br>(Rated VR, TJ= 25C)|dv/dt|10,000|V/ s|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

**THERMAL CHARACTERISTICS Characteristic Symbol Value Unit** Thermal Resistance, Junction - to - Lead (Anode) (Note 1) Rtjl 35 C/W Thermal Resistance, Junction - to - Tab (Cathode) (Note 1) Rtjtab 23 Thermal Resistance, Junction - to - Ambient (Note 1) Rtja 277 ~~a~~ 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**||**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2), See Figure 2<br>(IF= 0.1 A)<br>(IF= 1.0 A)<br>(IF= 3.0 A)|VF|**TJ = 25****C**|**TJ = 85****C**|V|
|||0.36<br>0.55<br>0.85|0.30<br>0.515<br>0.88||
|Maximum Instantaneous Reverse Current (Note 2), See Figure 4<br>(VR= 40 V)<br>(VR= 20 V)|IR|**TJ = 25****C**|**TJ = 85****C**|mA|
|||0.5<br>0.15|25<br>18||



2. Pulse Test: Pulse Width  250 s, Duty Cycle  2% 

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**MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G** 

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100<br>10 10<br>a es Oe a<br>ae Ee<br>1.0 TJ = 125C 1.0<br>[e][e]<br>— [f] TJ = 85C [fi] TJ = 25C TJ = 125C<br>TJ = 85C TJ = 25C<br>TJ = −40C<br>0.1 APP ae TT —aaa 0.1 LEe/ a<br>0.1 0.3 0.5 0.7 0.9 0.1 0.3 0.5 0.7 0.9<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE<br>(VOLTS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)iF , INSTANTANEOUS FORWARD CURRENT (AMPS)IF<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Maximum Forward Voltage** 

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**MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G** 

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10E−3 100E−3<br>1.0E−3 TJ = 85C 10E−3 TJ = 85C<br>100E−6 1.0E−3<br>ee<br>TJ = 25C TJ = 25C<br>10E−6 100E−6<br>1.0E−6 =ee 10E−6<br>0 10 20 30 40 0 10 20 30 40<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>1.8 1.0<br>FREQ = 20 kHz<br>dc<br>1.6 Fa SD 0.9<br>Ipk/Io =  SQUARE<br>1.21.4 PEPE SQUARE WAVE 0.80.7 EEO Ipk/Io = 10 Ipk/Io = 5 WAVE dc<br>0.6 Ipk/Io = 20<br>1.0<br>Oe Ipk/Io =  0.5 th Ho<br>0.8<br>Ne Ipk/Io = 5 0.4 ee 1 0<br>0.6<br>ee NN 0.3 mses eee<br>Ipk/Io = 10<br>0.4<br>0.2<br>Ipk/Io = 20<br><=<br>0.2 0.1<br>0 Fe NN|\ IN 0 KoAR~<br>25 35 45 55 65 75 85 95 105 115 125 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>Figure 5. Current Derating Figure 6. Forward Power Dissipation<br>1000 125<br>115<br>=== ——— TJ = 25C eee<br>105<br>100 W e AQ Rtja = 33.72C/W<br>95<br>51C/W<br>69C/W<br>SSeS SSS 85 UR 83.53C/W  S 96C/W E<br>10 PPP Perry 75 Ly SSS<br>0 5.0 10 15 20 25 30 35 40 0 5.0 10 15 20 25 30 35 40<br>VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS)<br>Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>, AVERAGE FORWARD CURRENT (AMPS)IO , AVERAGE POWER DISSIPATION (WATTS)FO<br>P<br>C)<br>C, CAPACITANCE (pF)<br>, DERATED OPERATING TEMPERATURE (<br>J<br>T<br>**----- End of picture text -----**<br>


* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation 

This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 

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**MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G** 

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1.0<br>aaTT 50% a 0|a00 GGee |TT | | | alemme0 ns|GOA | | A | yd SKGEmd Lr GOOA DO 0GGG GF OH<br>PL 20% rmrT = =o EE<br>0.1 10% esee [_.5] 2 |=eee== 2 = = TTa eel<br>===):— a ee ee a ne [—_] |ee 0 ee 0 eeeee ee<br>ee ee et Le eee<br>5.0%<br>Pe ree<br>a a a ee<br>TTT TT<br>2.0%<br>0.01 eecB-, 1.0% SSaPeeSS eBse SseeNSeeeSA OS Be ES|SREeA eeeSH|OEsy SSeeeRSTeA SSSSeeeOS|eeeSasGS 7 eeeeEc3neSGeeeDcGN 6 Pemee eroeSG|EeeeeOF<br>*<br>arti Rtjl(t) = Rtjl r(t) a<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100<br>T, TIME (s)<br>Figure 9. Thermal Response Junction to Lead<br>1.0 SSSSET 50% >=PPTBBTy= =.BB 8 PS=.0 OO=.0TT] | ee|=.| |)ee| fter| | eeee Lha—eeeee eeeee<br>FSSare erTT TT<br>0.1 eT 20% 10% rr]==ee eee>.eee EeeeS| | tir|Ssree|EE eeeSSeleeees<br>FSfee a eeeEs CO eee EEeeeee Ee eeeeeeeeeEeeee eeePetEee<br>5.0% aa aa a cesoce NO= |<br>a a ce ek | |<br>0.01 assseOteS ee ee ee ee |aee ee eeeeee ee ee|ee ee |eee<br>FE 2.0% A A eteeOS OO OO OS A OO OS SG OO OS NS OS OO ES SO 6 SS 6 GS<br>a Ps | Pe Er eee Er Er eee ee eee eee<br>ee ee | Rtjl(t) = Rtjl * r(t) aPy|<br>1.0%<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000<br>T, TIME (s)<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>(T)<br>R<br>, TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>(T)<br>R<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Response Junction to Ambient** 

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**MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G** 

## **REVISION HISTORY** 

|**Revision**<br>**Description of Changes**<br>**Date**<br>5<br>NRVBM140T3G OPN Marked as Discontinued + Rebranded the Data Sheet to**onsemi**format<br>7/4/2025<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~|
|---|
|on the noted approval dates.|



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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **POWERMITE 1.90x1.96x1.00** 

CASE 457 ISSUE H 

DATE 16 MAY 2025 

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GENERIC<br>MARKING DIAGRAMS*<br>M M<br>1 2 1 2<br>XXX XXX<br>STYLE 1:<br>i= =<br>PIN 1.<br>STYLE 1 STYLE 2 2.<br>M<br>1 2<br>XXX<br>XXX = Specific Device Code<br>M = Date Code<br>STYLE 3 = Pb−Free Package<br>DOCUMENT NUMBER: 98ASB14853C<br>DESCRIPTION: POWERMITE 1.90x1.96x1.00<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3:<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>PIN 1. CATHODE PIN 1. ANODE OR CATHODE PIN 1. ANODE<br>2. ANODE 2. CATHODE OR ANODE 2. CATHODE<br>(BI−DIRECTIONAL)<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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