NRVBB30H60CTT4G

**DATA SHEET www.onsemi.com** 

## Switch-mode Power Rectifier 

## **60 V, 30 A** 

## MBRB30H60CT-1G, MBRB30H60CTT4G, NRVBB30H60CTT4G, 

## **Features and Benefits** 

- Low Forward Voltage 

- Low Power Loss/High Efficiency 

- High Surge Capacity 

- 175°C Operating Junction Temperature 

# **SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 60 VOLTS** 

1 2, 4 3 

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4<br>I [2] PAK (TO−262)<br>CASE 418D−01<br>PLASTIC<br>STYLE 3<br>1<br>2<br>3<br>**----- End of picture text -----**<br>


- 30 A Total (15 A Per Diode Leg) 

- Guard−Ring for Stress Protection 

- AEC−Q101 Qualified and PPAP Capable 

- NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 

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**D[2] PAK 3 CASE 418B−04** 

- These are Pb−Free and Halide Free Devices* 

## **ORDERING AND MARKING INFORMATION** 

## **Applications** 

- Power Supply − Output Rectification 

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 

- Power Management 

- Instrumentation 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight (Approximately): 1.5 Grams (I[2] PAK) 

Weight (Approximately): 1.7 Grams (D[2] PAK) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

> *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **MBRB30H60CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **September, 2022 − Rev. 11** 

## **MBRB30H60CT−1G, MBRB30H60CTT4G, NRVBB30H60CTT4G,** 

## **MAXIMUM RATINGS** (Per Diode Leg) 

|**MAXIMUM RATINGS**(Per Diode Leg)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|60|V|
|Average Rectified Forward Current<br>(Rated VR) TC= 159°C|IF(AV)|15|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz)|IFRM|30|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|260|A|
|Operating Junction Temperature (Note 1)|TJ|−55 to +175|°C|
|Storage Temperature|Tstg|�55 to +175|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|
|Controlled Avalanche Energy (see test conditions in Figures 11 and 12)|WAVAL|350|mJ|
|ESD Ratings:<br>Machine Model = C<br>Human Body Model = 3B||> 400<br>> 8000|V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Maximum Thermal Resistance<br>(MBRB30H60CT−1G)<br>Junction−to−Case<br>Junction−to−Ambient<br>(MBRB30H60CTT4G and NRVBB30H60CTT4G)<br>Junction−to−Case|R�JC<br>R�JA<br>R�JC|2.0<br>70<br>1.6|°C/W|



## **ELECTRICAL CHARACTERISTICS** (Per Diode Leg) 

|**Characteristic**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(IF= 15 A, TC= 25°C)<br>(IF= 15 A, TC= 125°C)<br>(IF= 30 A, TC= 25°C)<br>(IF= 30 A, TC= 125°C)|vF|0.62<br>0.56<br>0.78<br>0.71|V|
|Maximum Instantaneous Reverse Current (Note 2)<br>(Rated DC Voltage, TC= 25°C)<br>(Rated DC Voltage, TC= 125°C)|iR|0.3<br>45|mA|



2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**MBRB30H60CT−1G, MBRB30H60CTT4G, NRVBB30H60CTT4G,** 

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100 100<br>TJ = 125 ° C TJ = 125 ° C<br>10 10<br>TJ = 25 ° C TJ = 25 ° C<br>1 1<br>0.1 0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>, INSTANTANEOUS FORWARD CURRENT (A)IF , INSTANTANEOUS FORWARD CURRENT (A)IF<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Maximum Forward Voltage** 

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1.0E−01 1.0E−01<br>1.0E−02 1.0E−02 TJ = 125 ° C<br>TJ = 125 ° C<br>1.0E−03 1.0E−03<br>1.0E−04 1.0E−04<br>1.0E−05 TJ = 25 ° C 1.0E−05 TJ = 25 ° C<br>1.0E−06 1.0E−06<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>, REVERSE CURRENT (A)<br>IR<br>, MAXIMUM REVERSE CURRENT (A)<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Current** 

**Figure 4. Maximum Reverse Current** 

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30 20<br>18<br>dc<br>25<br>16<br>14<br>20<br>SQUARE WAVE 12 SQUARE<br>15 10<br>DC<br>8<br>10<br>6<br>4<br>5<br>2<br>0 0<br>100 110 120 130 140 150 160 170 180 0 5 10 15 20 25<br>TC, CASE TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>(W)<br>, AVERAGE POWER DISSIPATION<br>FO<br>, AVERAGE FORWARD CURRENT (A)IF P<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating for MBRB30H60CT−1G, MBR30H60CTG, MBRB30H60CTT4G and NRVBB30H60CTT4G** 

**Figure 6. Forward Power Dissipation** 

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**3** 

**MBRB30H60CT−1G, MBRB30H60CTT4G, NRVBB30H60CTT4G,** 

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30 10,000<br>TJ = 25 ° C<br>dc<br>25<br>20<br>SQUARE WAVE<br>15 1000<br>10<br>5<br>0 100<br>100 110 120 130 140 150 160 170 180 0 10 20 30 40 50 60<br>TC, CASE TEMPERATURE ( ° C) VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, AVERAGE FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


**Figure 8. Current Derating for MBRF30H60CTG and MBRJ30H60CTG** 

**Figure 7. Capacitance** 

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10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>P(pk)<br>0.1<br>0.01 t1<br>t 2<br>SINGLE PULSE DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 9. Thermal Response Junction−to−Case for MBRB30H60CT−1G, MBR30H60CTG, MBRB30H60CTT4G and NVRBB30H60CTT4G** 

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10<br>D = 0.5<br>1<br>0.2<br>0.1<br>0.05<br>0.1<br>0.01<br>P(pk)<br>0.01 t 1<br>SINGLE PULSE t2<br>DUTY CYCLE, D = t 1 /t 2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Response Junction−to−Case for MBRF30H60CTG and MBRJ30H60CTG** 

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**4** 

**MBRB30H60CT−1G, MBRB30H60CTT4G, NRVBB30H60CTT4G,** 

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+VDD<br>IL 10 mH COIL<br>VD<br>MERCURY ID<br>SWITCH<br>DUT<br>S1<br>**----- End of picture text -----**<br>


**Figure 11. Test Circuit** 

The unclamped inductive switching circuit shown in Figure 11 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. 

When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. 

By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive 

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BVDUT<br>IL ID<br>VDD<br>t0 t1 t2 t<br>**----- End of picture text -----**<br>


**Figure 12. Current−Voltage Waveforms** 

elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). 

## **EQUATION (1):** 

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## **EQUATION (2):** 

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**MBRB30H60CT−1G, MBRB30H60CTT4G, NRVBB30H60CTT4G,** 

## **MARKING DIAGRAMS** 

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AYWW<br>AYWW B30H60G<br>B30H60G<br>AKA<br>AKA<br>I [2] PAK (TO−262) D [2] PAK<br>B30H60 = Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AKA = Polarity Designator<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|MBRB30H60CT−1G|TO−262<br>(Pb−Free)|50 Units / Tube|
|MBRB30H60CTT4G|D2PAK<br>(Pb−Free)|800 / Tape & Reel|
|NRVBB30H60CTT4G|D2PAK<br>(Pb−Free)|800 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**D[2] PAK 3** CASE 418B−04 ISSUE L 

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DATE 17 FEB 2015 

**SCALE 1:1** 

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NOTES:<br>C 1. DIMENSIONING AND TOLERANCING<br>PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>−B− V 3. 418B−01 THRU 418B−03 OBSOLETE,NEW STANDARD 418B−04.<br>W<br>4 INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 0.340 0.380 8.64 9.65<br>B 0.380 0.405 9.65 10.29<br>A C 0.160 0.190 4.06 4.83<br>S D 0.020 0.035 0.51 0.89<br>1 2 3 E 0.045 0.055 1.14 1.40<br>F 0.310 0.350 7.87 8.89<br>G 0.100 BSC 2.54 BSC<br>−T− H 0.080 0.110 2.03 2.79<br>K J 0.018 0.025 0.46 0.64<br>SEATINGPLANE G J W KL 0.0900.052 0.0720.110 2.291.32 2.791.83<br>M 0.280 0.320 7.11 8.13<br>H N 0.197 REF 5.00 REF<br>D 3 PL P 0.079 REF 2.00 REF<br>R 0.039 REF 0.99 REF<br>0.13 (0.005) M T B M S 0.575 0.625 14.60 15.88<br>V 0.045 0.055 1.14 1.40<br>VARIABLE<br>CONFIGURATION<br>ZONE N P<br>R<br>U<br>L L L<br>M M M<br>F F F<br>VIEW W−W VIEW W−W VIEW W−W<br>1 2 3<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT<br>2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE<br>3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE<br>4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE<br>**----- End of picture text -----**<br>


## **MARKING INFORMATION AND FOOTPRINT ON PAGE 2** 

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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42761B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION:  D [2] PAK 3 PAGE 1 OF 2<br>**----- End of picture text -----**<br>


**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

DATE 17 FEB 2015 

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D [2] PAK 3<br>CASE 418B−04<br>ISSUE L<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>xx AYWW<br>xxxxxxxxG<br>xxxxxxxxx xxxxxxxxG<br>AYWW<br>AWLYWWG  AKA<br>IC Standard Rectifier<br>xx = Specific Device Code<br>A = Assembly Location<br>WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AKA = Polarity Indicator<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

## **SOLDERING FOOTPRINT*** 

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10.49<br>8.38<br>16.155<br>2X<br>3.504<br>2X<br>1.016<br>5.080<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42761B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK 3 PAGE 2 OF 2** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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~~**2**~~ 

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© Semiconductor Components Industries, LLC, 2019 

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