NRVBAF360T3G

## MBRAF360T3G, NRVBAF360T3G 

## Surface Mount Schottky Power Rectifier 

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. 

## **Features** 

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**SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 60 VOLTS** 

- Low Profile Package for Space Constrained Applications 

- Rectangular Package for Automated Handling 

- Highly Stable Oxide Passivated Junction 

- 150°C Operating Junction Temperature 

- Guard−Ring for Stress Protection 

- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

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SMA−FL<br>CASE 403AA<br>STYLE 6<br>**----- End of picture text -----**<br>


- These are Pb−Free and Halide−Free Devices 

## **MARKING DIAGRAM** 

## **Mechanical Charactersistics** 

- Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 

- Weight: 95 mg (approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Cathode Polarity Band 

- Device Meets MSL 1 Requirements 

- ESD Ratings: Machine Model = C 

ESD Ratings: Human Body Model = 3B 

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RAH<br>AYWW<br>RAH = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>ORDERING INFORMATION<br>Device Package Shipping [†]<br>MBRAF360T3G SMA−FL 5000 / Tape & Reel<br>(Pb−Free)<br>NRVBAF360T3G SMA−FL 5000 / Tape & Reel<br>(Pb−Free)<br>=<br>†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specification<br>Brochure, BRD8011/D.<br>**----- End of picture text -----**<br>


Publication Order Number: **MBRAF360/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **December, 2016 − Rev. 3** 

## **MBRAF360T3G, NRVBAF360T3G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|60|V|
|Average Rectified Forward Current|IF(AV)|3.0 @ TL= 100°C<br>4.0 @ TL= 80°C|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz) TC= 125°C|IFRM|6|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|125|A|
|Storage Temperature Range|Tstg|−65 to +150|°C|
|Operating Junction Temperature (Note 1)|TJ|−65 to +150|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Note 2)|R�JL|25|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|90|°C/W|



2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 3)<br>(iF= 3.0 A, TJ= 25°C)|VF|0.63|V|
|Maximum Instantaneous Reverse Current (Note 3)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 100°C)|iR|0.03<br>3.0|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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10 10<br>TJ = 150 ° C<br>TJ = 175 ° C<br>TJ = 175 ° C<br>1 1<br>TJ = 100 ° C TJ = 150 ° C<br>TJ = 25 ° C TJ = 25 ° C<br>0.1 0.1 TJ = 100 ° C<br>TJ = −40 ° C TJ = −40 ° C<br>0.01 0.01<br>0.0 0.2 0.4 0.6 0.8 0.0 0.2 0.4 0.6 0.8<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>IF IF<br>**----- End of picture text -----**<br>


**Figure 1. Typical Forward Voltage** 

**Figure 2. Maximum Forward Voltage** 

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**2** 

**MBRAF360T3G, NRVBAF360T3G** 

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1.0E+00<br>1.0E−01 TJ = 175 ° C<br>1.0E−02<br>TJ = 150 ° C<br>1.0E−03 TJ = 100 ° C<br>1.0E−04<br>1.0E−05<br>TJ = 25 ° C<br>1.0E−06<br>1.0E−07<br>0 10 20 30 40 50 60<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current<br>1.0E+00<br>1.0E−01 TJ = 175 ° C<br>1.0E−02 TJ = 150 ° C<br>TJ = 100 ° C<br>1.0E−03<br>1.0E−04<br>TJ = 25 ° C<br>1.0E−05<br>1.0E−06<br>0 10 20 30 40 50 60<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 4. Maximum Reverse Current<br>1000<br>TJ = 25 ° C<br>100<br>10<br>0 10 20 30 40 50 60 70<br>VR, REVERSE VOLTAGE (V)<br>CURRENT (A)<br>, INSTANTANEOUS REVERSE<br>IR<br>CURRENT (A)<br>, INSTANTANEOUS REVERSE<br>IR<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Capacitance** 

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**3** 

**MBRAF360T3G, NRVBAF360T3G** 

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100<br>50% Duty Cycle<br>a 20% i<br>10 10%<br>5%<br>Pe 2% ere<br>1 a a||<br>1%<br>C7 a nl<br>0.1 PE ere TTT TTT i<br>a t nl<br>0.01 Single Pulse<br>ST te) ol<br>_EH FE2 2 1FH<br>De ee ee ee oe ee  -SCDUTY CYCLE, D = ty/t2 nM<br>0.001 LT TTT TTT TT ll<br>0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (S)<br>C/W)<br>°<br>RESISTANCE (<br>, TYPICAL TRANSIENT THERMAL<br>(t)<br>R<br>**----- End of picture text -----**<br>


**Figure 6. Typical Transient Thermal Response, Junction−to−Ambient** 

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**4** 

**MBRAF360T3G, NRVBAF360T3G** 

## **PACKAGE DIMENSIONS** 

**SMA−FL** CASE 403AA ISSUE O 

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E<br>NOTES:<br>E1 1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>MILLIMETERS<br>D DIM MIN MAX<br>A 0.90 1.10<br>b 1.25 1.65<br>c 0.15 0.30<br>D 2.40 2.80<br>TOP VIEW E 4.80 5.40<br>E1 4.00 4.60<br>[f — A = L 0.70 1.10<br>if RECOMMENDED<br>SOLDER FOOTPRINT*<br>c<br>SIDE VIEW C SEATING<br>PLANE 5.56<br>1.76<br>: 3 ro<br>2X b<br>1.30<br>Wey 2X L DIMENSIONS: MILLIMETERS<br>BOTTOM VIEW *For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**MBRAF360/D** 

**5**