NRVB30H100MFST3G

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## Switch-mode Power Rectifiers 

## MBR30H100MFS, NRVB30H100MFS 

## **SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 100 VOLTS** 

1,2,3 5,6 

These state−of−the−art devices have the following features: 

## **Features** 

- Low Power Loss / High Efficiency 

- New Package Provides Capability of Inspection and Probe After Board Mounting 

- Guardring for Stress Protection 

- Low Forward Voltage Drop 

- 175  C Operating Junction Temperature 

- Wettable Flacks Option Available 

- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

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MARKING<br>DIAGRAM<br>@& 1 A C<br>A B30H10<br>SO−8 FLAT LEAD<br>CASE 488AA A AYWZZ<br>STYLE 2 Not Used C<br>B30H10 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>ZZ = Lot Traceability<br>**----- End of picture text -----**<br>


- These are Pb−Free and Halide−Free Devices 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. 

- Lead Finish: 100% Matte Sn (Tin) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260  C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

## **Applications** 

- Output Rectification in Compact Portable Consumer Applications 

- Freewheeling Diode used with Inductive Loads 

- Telecom Power Conversion 

- Automotive Freewheeling Diode 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBR30H100MFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel|
|MBR30H100MFST3G|SO−8 FL<br>(Pb−Free)|5000 /<br>Tape & Reel|
|NRVB30H100MFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel|
|NRVB30H100MFST3G|SO−8 FL<br>(Pb−Free)|5000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **MBR30H100MFS/D** 

**1** 

 Semiconductor Components Industries, LLC, 2015 **January, 2024 − Rev. 3** 

**MBR30H100MFS, NRVB30H100MFS** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(Rated VR, TC= 140C)|IF(AV)|30|A|
|Peak Repetitive Forward Current,<br>(Rated VR, Square Wave, 20 kHz, TC= 135C)|IFRM|60|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|300|A|
|Storage Temperature Range|Tstg|−65 to +175|C|
|Operating Junction Temperature|TJ|−55 to +175|C|
|Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)|EAS|100|mJ|
|ESD Rating (Human Body Model)||3B||
|ESD Rating (Machine Model)||M4||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. 

## **THERMAL CHARACTERISTICS** 

**Characteristic Symbol Typ Max Unit** Thermal Resistance, Junction−to−Case, Steady State RJC − 1.6 C/W (Assumes 600 mm[2] 1 oz. copper bond pad, on a FR4 board) **ELECTRICAL CHARACTERISTICS** Instantaneous Forward Voltage (Note 1) vF V (iF = 15 A, TJ = 125C) 0.58 0.72 (iF = 15 A, TJ = 25C) 0.71 0.76 (iF = 30 A, TJ = 125C) 0.66 0.86 (iF = 30 A, TJ = 25C) 0.81 0.90 Instantaneous Reverse Current (Note 1) iR mA (Rated dc Voltage, TJ = 125C) 5 15 (Rated dc Voltage, TJ = 25C) 0.005 0.1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ~~ee~~ Pulse Test: Pulse Width = 300 s, Duty Cycle .0%. 

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**MBR30H100MFS, NRVB30H100MFS** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>——— Eee<br>TA = 175C TA = 175C<br>10 are TA = 150C Ae ae 10 P| TA = |  150C UCU<br>TA = 125  C TA = 125  C<br>FI fi RAP<br>1 1<br>P| Lyi szy | | | | PP li“ fZf|| |<br>T A  = 25C TA = 25  C<br>ee ee<br>0.1 T LTT TA = −40C 0.1 es elcee a TA = −40C<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E+00 1.E+00<br>1.E−01 TA = 175C 1.E−01 TA = 175C<br>2<br>1.E−02 1.E−02<br>1.E−031.E−04 7 TA = 125C TA = 150C e 1.E−031.E−04 ee TA = 125C ae TA = 150C<br>1.E−05 1.E−05<br>1.E−06 TA = 25C 1.E−06 TA = 25C<br>ee<br>1.E−07 1.E−07<br>1.E−08 1.E−08<br>1.E−09 1.E−09<br>1.E−10 TA = −40C 1.E−10 TA = −40C<br>1.E−11 1.E−11<br>1.E−12 1.E−12<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>10000 60<br>ee eee TJ = 25C 55 ee R JC  = 1.6C/W<br>50 dc<br>a } | | ft tt<br>a a ee 45 p—ftt<br>1000 ht | | | | cd] dT dT] 40 PNP| dt ET<br>35 Square Wave<br>Bo 30 ee<br>a Po Na<br>25<br>100 PT | Pr 20 PNA<br>15<br>BESS SS==== AN<br>10<br>pF IN<br>5<br>10 fF | | | | | jf | ft ft 0 PofF |oN| [ | | | | | | [| IN<br>0 10 20 30 40 50 60 70 80 90 100 60 80 100 120 140 160<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>C, JUNCTION CAPACITANCE (pF) , AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating** 

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## **TYPICAL CHARACTERISTICS** 

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8<br>IPK/IAV = 20 IPK/IAV = 10 TJ = 175C<br>7<br>a an<br>6<br>en a)<br>a<br>5<br>IPK/IAV = 5<br>4 i<br>3<br>2 LLAaa [a] Square Wave<br>1 TLEa dc<br>0 Zan<br>0 1 2 3 4<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>ER DISSIPATION (W)<br>, AVERAGE FORWARD POW-<br>F(AV)<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Forward Power Dissipation** 

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100<br>50% Duty Cycle<br>20%<br>10 10%<br>5%<br>2%<br>1<br>1%<br>0.1 Assumes 25C ambient and soldered to<br>a 600 mm [2] − oz copper pad on PCB<br>0.01<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br><br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 8. Thermal Characteristics** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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DFN5 5x6, 1.27P<br>(SO−8FL)<br>CASE 488AA<br>1 ISSUE N<br>SCALE 2:1 DATE 25 JUN 2018<br>2 X NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>� c 0.23 0.28 0.33<br>E D 5.00 5.15 5.30<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.00 6.15 6.30<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.575 0.71<br>C K 1.20 1.35 1.50<br>SEATING L 0.51 0.575 0.71<br>0.10 C DETAIL A PLANE L1 0.125 REF<br>M 3.00 3.40 3.80<br>A � 0   � −−− 12    �<br>0.10 C GENERIC<br>SIDE VIEW MARKING DIAGRAM*<br>DETAIL A<br>1<br>8X b XXXXXX<br>0.10 C A B e/2 AYWZZ<br>0.05 c<br>L e<br>1 4 XXXXXX = Specific Device Code<br>K A = Assembly Location<br>Y = Year<br>RECOMMENDED W = Work Week<br>E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability<br>(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to<br>2X device data sheet for actual part marking.<br>1.530 Pb−Free indicator, “G” or microdot “  � ”,<br>may or may not be present. Some products<br>G D2 2X may not follow the Generic Marking.<br>BOTTOM VIEW 0.475<br>3.200<br>4.530<br>STYLE 1: STYLE 2: 2X 1.330<br>PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905<br> 3. SOURCE  3. ANODE 1<br> 4. GATE  4. NO CONNECT<br> 5. DRAIN  5. CATHODE 0.965<br>4X<br>1.000 1.270<br>4X 0.750 PITCH<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the  onsemi  Soldering and Mounting<br>Techniques Reference Manual, SOLDERRM/D.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON14036D Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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