NRVB30H100MFST1G

## MBR30H100MFS, NRVB30H100MFS 

## Switch-mode Power Rectifiers 

These state−of−the−art devices have the following features: 

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## **Features** 

- Low Power Loss / High Efficiency 

- New Package Provides Capability of Inspection and Probe After Board Mounting 

- Guardring for Stress Protection 

- Low Forward Voltage Drop 

**SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 100 VOLTS** 

- 175°C Operating Junction Temperature 

- Wettable Flacks Option Available 

- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These are Pb−Free and Halide−Free Devices 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. 

- Lead Finish: 100% Matte Sn (Tin) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

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1,2,3 5,6<br>MARKING<br>DIAGRAM<br>|<br>> 1 A C<br>A B30H10<br>SO−8 FLAT LEAD<br>CASE 488AA A AYWZZ<br>STYLE 2 Not Used C<br>B30H10 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>ZZ = Lot Traceability<br>**----- End of picture text -----**<br>


## **Applications** 

- Output Rectification in Compact Portable Consumer Applications 

## **ORDERING INFORMATION** 

- Freewheeling Diode used with Inductive Loads 

- Telecom Power Conversion 

- Automotive Freewheeling Diode 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MBR30H100MFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel|
|MBR30H100MFST3G|SO−8 FL<br>(Pb−Free)|5000 /<br>Tape & Reel|
|NRVB30H100MFST1G|SO−8 FL<br>(Pb−Free)|1500 /<br>Tape & Reel|
|NRVB30H100MFST3G|SO−8 FL<br>(Pb−Free)|5000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **MBR30H100MFS/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **March, 2015 − Rev. 2** 

**MBR30H100MFS, NRVB30H100MFS** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(Rated VR, TC= 140°C)|IF(AV)|30|A|
|Peak Repetitive Forward Current,<br>(Rated VR, Square Wave, 20 kHz, TC= 135°C)|IFRM|60|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|300|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature|TJ|−55 to +175|°C|
|Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)|EAS|100|mJ|
|ESD Rating (Human Body Model)||3B||
|ESD Rating (Machine Model)||M4||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Case, Steady State<br>(Assumes 600 mm21 oz. copper bond pad, on a FR4 board)|RθJC|−|1.6|°C/W|
|**ELECTRICAL CHARACTERISTICS**|||||
|Instantaneous Forward Voltage (Note 1)<br>(iF= 15 A, TJ= 125°C)<br>(iF= 15 A, TJ= 25°C)<br>(iF= 30 A, TJ= 125°C)<br>(iF= 30 A, TJ= 25°C)|vF|0.58<br>0.71<br>0.66<br>0.81|0.72<br>0.76<br>0.86<br>0.90|V|
|Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 125°C)<br>(Rated dc Voltage, TJ= 25°C)|iR|5<br>0.005|15<br>0.1|mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**MBR30H100MFS, NRVB30H100MFS** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>TA = 175 ° C TA = 175 ° C<br>10 10<br>TA = 150 ° C TA = 150 ° C<br>T A  = 125 ° C T A  = 125 ° C<br>1 1<br>T A  = 25 ° C T A  = 25 ° C<br>0.1 TA = −40 ° C 0.1 TA = −40 ° C<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E+00 1.E+00<br>1.E−01 TA = 175 ° C 1.E−01 TA = 175 ° C<br>1.E−02 1.E−02<br>1.E−031.E−04 TA = 125 ° C TA = 150 ° C 1.E−031.E−04 TA = 125 ° C TA = 150 ° C<br>1.E−05 1.E−05<br>1.E−06 TA = 25 ° C 1.E−06 TA = 25 ° C<br>1.E−07 1.E−07<br>1.E−08 1.E−08<br>1.E−09 1.E−09<br>1.E−10 TA = −40 ° C 1.E−10 TA = −40 ° C<br>1.E−11 1.E−11<br>1.E−12 1.E−12<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>10000 60<br>TJ = 25 ° C 55 R � JC  = 1.6 ° C/W<br>50 dc<br>45<br>1000 40<br>35 Square Wave<br>30<br>25<br>100 20<br>15<br>10<br>5<br>10 0<br>0 10 20 30 40 50 60 70 80 90 100 60 80 100 120 140 160<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>C, JUNCTION CAPACITANCE (pF) , AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating** 

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**3** 

**MBR30H100MFS, NRVB30H100MFS** 

## **TYPICAL CHARACTERISTICS** 

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8<br>IPK/IAV = 20 IPK/IAV = 10 TJ = 175 ° C<br>7<br>6<br>5<br>IPK/IAV = 5<br>4<br>3<br>2 Square Wave<br>1 dc<br>0<br>0 1 2 3 4<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>ER DISSIPATION (W)<br>, AVERAGE FORWARD POW-<br>F(AV)<br>P<br>**----- End of picture text -----**<br>


**Figure 7. Forward Power Dissipation** 

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100<br>50% Duty Cycle<br>20%<br>10 10%<br>5%<br>2%<br>1<br>1%<br>0.1 Assumes 25 ° C ambient and soldered to<br>a 600 mm [2]  − oz copper pad on PCB<br>0.01<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 8. Thermal Characteristics** 

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**4** 

**MBR30H100MFS, NRVB30H100MFS** 

## **PACKAGE DIMENSIONS** 

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DFN6 5x6, 1.27P<br>(SO8 FL)<br>2 X CASE 488AA NOTES:<br>ISSUE H 1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>a D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>oe A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>c 0.23 0.28 0.33<br>E D 5.15 BSC<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.15 BSC<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.61 0.71<br>TSW 3 X C ———— K 1.20 1.35 1.50<br>0.10 C e SEATINGPLANE L1L 0.510.05 0.610.17 0.710.20<br>~ | [ ao M 3.00 3.40 3.80<br>A DETAIL A — 0  −−− 12<br>0.10 C STYLE 2:<br>a PIN 1. ANODE<br>SIDE VIEW  2. ANODE<br>DETAIL A SOLDERING FOOTPRINT*  3. ANODE<br> 4. NO CONNECT<br> 5. CATHODE<br>3X 4X<br>8X b 1.270 0.750<br>0.10 C A B 4X<br>1.000<br>0.05 c L e/2<br>1 4<br>0.965 _o ujo ot<br>K<br>r ile [—] 1.330 2X<br>0.905<br>E2 2X<br>(EXPOSED PAD)PIN 5 L1 M 0.495 4.530<br>3.200<br>0.475<br>G D2<br>acing<br>BOTTOM VIEW 2X<br>1.530<br>roo Li 4.560  eS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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## **LITERATURE FULFILLMENT** : 

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**MBR30H100MFS/D** 

**5**