NRVB230LSFT1G
Schottky Rectifier, 30 V, 2 A, Single, SOD-123FL, 2 Pins, 430 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-123FL
- Diode Configuration: Single
- Forward Voltage Max: 430mV
- Forward Surge Current: 40A
- Average Forward Current: 2A
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 30V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.136 € |
| Current stock | 10+ |
| Lead time | 30 days |
## MBR230LSFT1G ## Surface Mount Schottky Power Rectifier **Plastic SOD−123 Package** This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. ## **Features** **http://onsemi.com** **SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 30 VOLTS** **SOD−123FL CASE 498** - Guardring for Stress Protection - Low Forward Voltage - 125°C Operating Junction Temperature - Epoxy Meets UL 94 V−0 - Package Designed for Optimal Automated Board Assembly - ESD Ratings: Machine Model, C - Human Body Model, 3B - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free and are RoHS Compliant ## **Mechanical Characteristics** - Reel Options: MBR230LSFT1G = 3,000 per 7 in reel/8 mm tape - Device Marking: L3N - Polarity Designator: Cathode Band - Weight: 11.7 mg (approximately) - Case: Epoxy, Molded - Lead Finish: 100% Matte Sn (Tin) - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds **MARKING DIAGRAM** L3N M ql .p L3N = Specific Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) **ORDERING INFORMATION** **Device Package Shipping**[†] MBR230LSFT1G SOD−123FL 3000/Tape & Reel (Pb−Free) NRVB230LSFT1G SOD−123FL 3000/Tape & Reel (Pb−Free) ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. - Device Meets MSL 1 Requirements Publication Order Number: **MBR230LSFT1/D** **1** © Semiconductor Components Industries, LLC, 2014 **July, 2014 − Rev. 1** **MBR230LSFT1G** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|30|V| |Average Rectified Forward Current (At Rated VR, TL= 105°C)|IO|2.0|A| |Peak Repetitive Forward Current<br>(At Rated VR, Square Wave, 100 kHz, TL= 95°C)|IFRM|4.0|A| |Non−Repetitive Peak Surge Current<br>(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)|IFSM|40|A| |Storage Temperature|Tstg|−55 to 150|°C| |Operating Junction Temperature|TJ|−55 to 125|°C| |Voltage Rate of Change (Rated VR, TJ= 25°C)|dv/dt|10,000|V/�s| |**THERMAL CHARACTERISTICS**|||| |Thermal Resistance, Junction−to−Lead (Note 1)<br>Thermal Resistance, Junction−to−Lead (Note 2)<br>Thermal Resistance, Junction−to−Ambient (Note 1)<br>Thermal Resistance, Junction−to−Ambient (Note 2)|Rtjl<br>Rtjl<br>Rtja<br>Rtja|26<br>21<br>325<br>82|°C/W| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm[2] ). ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**||||| |---|---|---|---|---| |Maximum Instantaneous Forward Voltage (Note 3)<br>(IF= 1.0 A)<br>(IF= 2.0 A)|VF|**TJ = 25**°**C**|**TJ = 100**°**C**|V| |||0.38<br>0.43|0.30<br>0.37|| |Maximum Instantaneous Reverse Current (Note 3)<br>(VR= 30 V)|IR|**TJ = 25**°**C**|**TJ = 100**°**C**|mA| |||1.0|25|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 � s, Duty Cycle ≤ 2%. **http://onsemi.com** **2** **MBR230LSFT1G** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 630] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>TJ = 125 ° C<br>1 1 TJ = 125 ° C<br>TJ = 100 ° C<br>TJ = 100 ° C<br>TJ = 25 ° C<br>TJ = −55 ° C TJ = 25 ° C TJ = −55 ° C<br>0.1 0.1<br>0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.10 0.20 0.30 0.40 0.50 0.60 0.70<br>VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD<br>VOLTAGE (VOLTS)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>100E−3 1E+0<br>TJ = 125 ° C<br>10E−3<br>1E−3 TJ = 100 ° C 100E−3 TJ = 125 ° C<br>100E−6<br>10E−3<br>10E−6 TJ = 25 ° C TJ = 100 ° C<br>1E−3<br>1E−6<br>100E−9 TJ = −55 ° C TJ = 25 ° C<br>100E−6<br>10E−9 TJ = −55 ° C<br>1E−9 10E−6<br>0 10 20 30 0 10 20 30<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>3.5 1.6<br>dc<br>3 1.4<br>dc<br>square wave<br>1.2<br>2.5 Ipk/IO = p<br>square wave freq = 20 kHz 1.0<br>2 Ipk/IO = p Ipk/IO = 5<br>0.8<br>1.5 Ipk/IO = 5<br>0.6<br>1<br>0.4<br>0.5 0.2<br>0<br>0<br>25 35 45 55 65 75 85 95 105 115 125 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>Figure 5. Current Derating Figure 6. Forward Power Dissipation<br>CURRENT (AMPS) CURRENT (AMPS)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>IF IF<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IO FO<br>P<br>**----- End of picture text -----**<br> **http://onsemi.com** **3** **MBR230LSFT1G** ## **TYPICAL CHARACTERISTICS** **==> picture [238 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> 125<br>120 R � JA = 25.6 = 25.6 ° C/W<br>115<br>110<br>105 R � JA = 130 = 130 ° C/W<br>100<br>95<br>90<br>85 R � JA = 235 = 235 ° C/W<br>80<br>75 R � JA = 324.9 = 324.9 ° C/W<br>70 R � JA = 400 = 400 ° C/W<br>65<br>0 2 4 6 8 10 12 14 16 18 20<br>VR, DC REVERSE VOLTAGE (VOLTS)R, DC REVERSE VOLTAGE (VOLTS), DC REVERSE VOLTAGE (VOLTS)<br>Figure 8. Typical Operating Temperature<br>Derating<br>C)<br>°<br>, DERATED OPERATING TEMPERATURE (<br>J<br>T<br>**----- End of picture text -----**<br> **==> picture [490 x 414] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 125<br>TJ = 25 ° C 120 R � JA = 25.6 = 25.6 ° C/W<br>115<br>110<br>105 R � JA = 130 = 130 ° C/W<br>100<br>100 95<br>90<br>R � JA = 235 = 235 ° C/W<br>85<br>80<br>75 R � JA = 324.9 = 324.9 ° C/W<br>70 R � JA = 400 = 400 ° C/W<br>10 65<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20<br>VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS)R, DC REVERSE VOLTAGE (VOLTS), DC REVERSE VOLTAGE (VOLTS)<br>Figure 7. Capacitance Figure 8. Typical Operating Temperature<br>Derating<br>1000<br>D = 0.5<br>100 0.2<br>0.1<br>0.05<br>10 P(pk)<br>0.01<br>t 1<br>t 2<br>1 DUTY CYCLE, D = t1/t2<br>SINGLE PULSE<br>Test Type > Min Pad < Die Size 38x38 @ 75% mils � JA = 321.8 ° C/W<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>°<br>C, CAPACITANCE (pF)<br>, DERATED OPERATING TEMPERATURE (<br>J<br>T<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 9. Thermal Response** **http://onsemi.com** **4** **MBR230LSFT1G** ## **PACKAGE DIMENSIONS** **SOD−123LF** CASE 498 ISSUE D **==> picture [212 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> E<br>f y<br>D<br>1 2<br>A1<br>POLARITY INDICATOR<br>OPTIONAL AS NEEDED A<br>a e HO<br>TOP VIEW END VIEW<br>HE a4 c<br>SIDE VIEW<br>2X L<br>2X b<br>Ho BOTTOM VIEW |<br>**----- End of picture text -----**<br> **==> picture [189 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.<br>4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION<br>OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.90 0.95 0.98 0.035 0.037 0.039<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b === 0.70 0.90 1.10 0.028 == 0.035 0.043<br>c 0.10 0.15 0.20 0.004 0.006 0.008<br>D 1.50 1.65 1.80 0.059 0.065 0.071<br>E 2.50 2.70 2.90 0.098 0.106 0.114<br>L 0.55 0.75 0.95 0.022 0.030 0.037<br>H E 3.40 3.60 3.80 0.134 0.142 0.150<br>0° − 8° 0° − 8°<br>————<br>**----- End of picture text -----**<br> ## **RECOMMENDED SOLDERING FOOTPRINT*** **==> picture [251 x 93] intentionally omitted <==** **----- Start of picture text -----**<br> 4.20<br>2X<br>1.25<br>ÉÉÉÉ ÉÉÉÉ<br>2X 1.22 ÉÉÉÉ ÉÉÉÉ<br>ÉÉÉÉ ÉÉÉÉ<br>| LT .ET<br>ÉÉÉÉ ÉÉÉÉ<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **http://onsemi.com** **MBR230LSFT1/D** **5**
Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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