NRVB1H100SFT3G

## **ON Semiconductor** 

## **Is Now** 

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**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## MBR1H100SFT3G, NRVB1H100SFT3G 

## Schottky Power Rectifier, Surface Mount 

## **1.0 A, 100 V, SOD-123FL Package** 

This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. 

## **http://onsemi.com** 

**SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 100 VOLTS** 

## **Features** 

- Guardring for Stress Protection 

- Low Forward Voltage 

**SOD−123FL CASE 498** 

- 175°C Operating Junction Temperature 

- Epoxy Meets UL 94 V−0 

## **MARKING DIAGRAM** 

- Package Designed for Optimal Automated Board Assembly 

- ESD Ratings: Machine Model, C 

   - Human Body Model, 3B 

- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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L1HM<br>ql -"p<br>L1H = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

## **Mechanical Characteristics** 

- Reel Options: MBR1H100SFT3G = 10,000 per 13 in reel/8 mm tape 

- Device Marking: L1H 

- Polarity Designator: Cathode Band 

- Weight: 11.7 mg (approximately) 

- Case: Epoxy, Molded 

- Lead Finish: 100% Matte Sn (Tin) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] MBR1H100SFT3G SOD−123 10000/Tape & Reel (Pb−Free) NRVB1H100SFT3G SOD−123 10000/Tape & Reel (Pb−Free) ~~=o~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **August, 2014 − Rev. 2** 

**MBR1H100SF/D** 

**MBR1H100SFT3G, NRVB1H100SFT3G** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(TL= 162°C)|IO|1.0|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Storage and Operating Junction Temperature Range (Note 1)|Tstg, TJ|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Lead (Note 2)|�JCL|23|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 2)|R�JA|85|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 3)|R�JA|330|°C/W|
|**ELECTRICAL CHARACTERISTICS**||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 4)<br>(IF= 1.0 A, TJ= 25°C)<br>(IF= 2.0 A, TJ= 25°C)<br>(IF= 1.0 A, TJ= 125°C)<br>(IF= 2.0 A, TJ= 125°C)|VF|0.76<br>0.84<br>0.61<br>0.68|V|
|Maximum Instantaneous Reverse Current (Note 4)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|IR|40<br>0.5|�A<br>mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Mounted with 700 mm[2] copper pad size (Approximately 1 in[2] ) 1 oz FR4 Board. 

3. Mounted with pad size approximately 20 mm[2] copper, 1 oz FR4 Board. 

4. Pulse Test: Pulse Width ≤ 380 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**MBR1H100SFT3G, NRVB1H100SFT3G** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>150 ° C 125 ° C 25 ° C 150 ° C 125 ° C 25 ° C<br>10 10<br>1 1<br>0.1 0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>10 10<br>1 150 ° C 1 150 ° C<br>0.1 125 ° C 0.1 125 ° C<br>0.01 0.01<br>25 ° C<br>0.001 0.001<br>0.0001 25 ° C 0.0001<br>0.00001 0.00001<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>2.0 1.0<br>dc R � JL = 23 ° C/W TJ = 175 ° C Square Wave<br>0.8<br>1.5<br>dc<br>Square Wave 0.6<br>1.0<br>0.4<br>0.5<br>0.2<br>0 0<br>135 140 145 150 155 160 165 170 175 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (A)<br>, FORWARD CURRENT (A) , FORWARD CURRENT (A)<br>IF IF<br>, REVERSE CURRENT (mA) , REVERSE CURRENT (mA)<br>IR IR<br>, AVERAGE FORWARD CURRENT (A)<br>, AVERAGE POWER DISSIPATION (W)<br>IF(AV) PFO<br>**----- End of picture text -----**<br>


**Figure 5. Current Derating** 

**Figure 6. Forward Power Dissipation** 

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**3** 

**MBR1H100SFT3G, NRVB1H100SFT3G** 

## **TYPICAL CHARACTERISTICS** 

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140<br>TJ = 25 ° C<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance** 

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1000<br>50% (DUTY CYCLE)<br>100 25%<br>10%<br>5.0%<br>10 2.0%<br>1.0%<br>1.0<br>0.1<br>SINGLE PULSE<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (s)<br>Figure 8. Thermal Response, Junction−to−Ambient (20 mm [2]  pad)<br>100<br>50% (DUTY CYCLE)<br>25%<br>10 10%<br>5.0%<br>2.0%<br>1.0<br>1.0%<br>0.1<br>SINGLE PULSE<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>PULSE TIME (s)<br>R(t) (C/W)<br>R(t) (C/W)<br>**----- End of picture text -----**<br>


**Figure 9. Thermal Response, Junction−to−Ambient (1 in[2] pad)** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SOD−123FL<br>CASE 498<br>ISSUE D<br>**----- End of picture text -----**<br>


DATE 10 MAY 2013 

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SCALE 4:1<br>E<br>‘ D a r £<br>1 2<br>A1<br>POLARITY INDICATOR<br>OPTIONAL AS NEEDED A<br>TOP VIEW END VIEW<br>_ “<br>= 4 HE c<br>SIDE VIEW<br>2X L<br>2X b<br>“ c e<br>BOTTOM VIEW<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>4.20<br>2X<br>1.25<br>ÉÉÉ ÉÉÉÉ<br>— - =<br>2X 1.22 ÉÉÉ ÉÉÉÉ<br>ÉÉÉ ÉÉÉÉ<br>(A<br>ÉÉÉ ÉÉÉÉ<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


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NOTES:<br>**----- End of picture text -----**<br>


1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 

2. CONTROLLING DIMENSION: MILLIMETER. 

3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 

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4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION<br>OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.90 0.95 0.98 0.035 0.037 0.039<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 0.70 0.90 1.10 0.028 0.035 0.043<br>c 0.10 0.15 0.20 0.004 0.006 0.008<br>D 1.50 1.65 1.80 0.059 0.065 0.071<br>E 2.50 2.70 2.90 0.098 0.106 0.114<br>L 0.55 0.75 0.95 0.022 0.030 0.037<br>H E 3.40 3.60 3.80 0.134 0.142 0.150<br>0° − 8° 0° − 8°<br>GENERIC<br>SS MARKING DIAGRAM*<br>XXXM<br>XXX = Specific Device Code<br>M = Date Code<br>— = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON11184D** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOD−123FL PAGE 1 OF 1** ~~a~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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