NRVB140SFT3G
Schottky Rectifier, 40 V, 1 A, Single, SOD-123FL, 2 Pins, 850 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-123FL
- Diode Configuration: Single
- Forward Voltage Max: 850mV
- Forward Surge Current: 30A
- Average Forward Current: 1A
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 40V
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 0.085 € |
| Current stock | 10+ |
| Lead time | 30 days |
**DATA SHEET www.onsemi.com** ## Surface Mount Schottky Power Rectifier ## **Plastic SOD−123 Package** ## MBR140SF, NRVB140SF, SNRVB140SF This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. ## **SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS** **==> picture [44 x 36] intentionally omitted <==** **==> picture [46 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> SOD−123FL<br>CASE 498<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** **==> picture [147 x 89] intentionally omitted <==** **----- Start of picture text -----**<br> L4FM �<br>�<br>L4F = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package)<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br> ## **Features** - Guardring for Stress Protection - Low Forward Voltage - 125°C Operating Junction Temperature - Epoxy Meets UL 94 V−0 @ 0.125 in - Package Designed for Optimal Automated Board Assembly - ESD Rating: - ♦ Human Body Model = 3B - ♦ Machine Model = C - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Mechanical Characteristics** - Device Marking: L4F - Polarity Designator: Cathode Band - Weight: 11.7 mg (approximately) - Case: Epoxy, Molded - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MBR140SFT1G|SOD−123FL<br>(Pb−Free)|3,000 /<br>Tape & Reel **| |NRVB140SFT1G|SOD−123FL<br>(Pb−Free)|3,000 /<br>Tape & Reel **| |MBR140SFT3G|SOD−123FL<br>(Pb−Free)|10,000 /<br>Tape & Reel ***| |NRVB140SFT3G|SOD−123FL<br>(Pb−Free)|10,000 /<br>Tape & Reel ***| |SNRVB140SFT1G|SOD−123FL<br>(Pb−Free)|3,000 /<br>Tape & Reel **| |SNRVB140SFT3G|SOD−123FL<br>(Pb−Free)|10,000 /<br>Tape & Reel ***| - ** 8 mm Tape, 7” Reel - *** 8 mm Tape, 13” Reel - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Publication Order Number: **MBR140SFT1/D** **1** © Semiconductor Components Industries, LLC, 2014 **April, 2023 − Rev. 7** ## **MBR140SF, NRVB140SF, SNRVB140SF** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|40|V| |Average Rectified Forward Current (At Rated VR, TL= 112°C)|IO|1.0|A| |Peak Repetitive Forward Current<br>(At Rated VR, Square Wave, 100 kHz, TL= 95°C)|IFRM|2.0|A| |Non−Repetitive Peak Surge Current<br>(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)|IFSM|30|A| |Storage Temperature|Tstg|−55 to 150|°C| |Operating Junction Temperature|TJ|−55 to 125|°C| |Voltage Rate of Change (Rated VR, TJ= 25°C)|dv/dt|10,000|V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction−to−Lead (Note 1)<br>Thermal Resistance, Junction−to−Lead (Note 2)<br>Thermal Resistance, Junction−to−Ambient (Note 1)<br>Thermal Resistance, Junction−to−Ambient (Note 2)|Rtjl<br>Rtjl<br>Rtja<br>Rtja|26<br>21<br>325<br>82|°C/W| 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm[2] ). ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Value**||**Unit**| |Maximum Instantaneous Forward Voltage (Note 3), See Figure 2<br>(IF= 0.1 A)<br>(IF= 1.0 A)<br>(IF= 3.0 A)|VF|**TJ = 25**°**C**|**TJ = 85**°**C**|V| |||0.36<br>0.55<br>0.85|0.30<br>0.515<br>0.88|| |Maximum Instantaneous Reverse Current (Note 3), See Figure 4<br>(VR= 40 V)<br>(VR= 20 V)|IR|**TJ = 25**°**C**|**TJ = 85**°**C**|mA| |||0.5<br>0.15|25<br>18|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 � s, Duty Cycle ≤ 2%. **www.onsemi.com** **2** **MBR140SF, NRVB140SF, SNRVB140SF** **==> picture [234 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1.0 TJ = 125 ° C<br>TJ = 85 ° C TJ = 25 ° C<br>TJ = −40 ° C<br>0.1<br>0.1 0.3 0.5 0.7 0.9<br>, INSTANTANEOUS FORWARD CURRENT (AMPS) vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>iF<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage** **==> picture [243 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1.0<br>TJ = 125 ° C<br>TJ = 85 ° C TJ = 25 ° C<br>0.1<br>0.1 0.3 0.5 0.7 0.9<br>VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE<br>(VOLTS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>IF<br>**----- End of picture text -----**<br> **Figure 2. Maximum Forward Voltage** **==> picture [493 x 395] intentionally omitted <==** **----- Start of picture text -----**<br> 100E−3 1.0E+0<br>10E−3 TJ = 125 ° C 100E−3<br>TJ = 85 ° C TJ = 85 ° C<br>1.0E−3 10E−3<br>100E−6 1.0E−3<br>TJ = 25 ° C T J = 25 ° C<br>10E−6 100E−6<br>1.0E−6 10E−6<br>0 10 20 30 40 0 10 20 30 40<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>1.8 1.0<br>dc freq = 20 kHz<br>1.6 0.9<br>Ipk/Io = � SQUARE<br>1.4 SQUARE 0.80.7 Ipk/Io = 10 Ipk/Io = 5 WAVE dc<br>1.2 WAVE<br>0.6 Ipk/Io = 20<br>1<br>Ipk/Io = � 0.5<br>0.8<br>Ipk/Io = 5 0.4<br>0.6<br>0.3<br>Ipk/Io = 10<br>0.4<br>Ipk/Io = 20 0.2<br>0.2 0.1<br>0 0<br>25 35 45 55 65 75 85 95 105 115 125 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>TL, LEAD TEMPERATURE ( ° C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>, AVERAGE FORWARD CURRENT (AMPS) , AVERAGE POWER DISSIPATION (WATTS)<br>IO FO<br>P<br>**----- End of picture text -----**<br> **Figure 5. Current Derating** **Figure 6. Forward Power Dissipation** **www.onsemi.com** **3** **MBR140SF, NRVB140SF, SNRVB140SF** **==> picture [485 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 125<br>R � JA = 25.6 ° C/W<br>115<br>130 ° C/W<br>TJ = 25 ° C 105<br>324.9 ° C/W<br>95<br>100<br>85<br>235 ° C/W<br>75<br>65<br>10 55<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40<br>VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS)<br>C)<br>°<br>TEMPERATURE (<br>, DERATED OPERATING<br>C, CAPACITANCE (pF) J<br>T<br>**----- End of picture text -----**<br> **Figure 7. Capacitance** **Figure 8. Typical Operating Temperature Derating*** * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. **==> picture [490 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>D = 0.5<br>100 0.2<br>0.1<br>0.05<br>10 P(pk)<br>0.01<br>t 1<br>t 2<br>1 DUTY CYCLE, D = t1/t2<br>SINGLE PULSE<br>Test Type > Min Pad < Die Size 38x38 @ 75% mils � JA = 321.8 ° C/W<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 9. Thermal Response** **www.onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOD−123−2 1.65x2.70x0.90** CASE 498 ISSUE E **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 22 AUG 2023<br>**----- End of picture text -----**<br> **==> picture [103 x 101] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM*<br>XXXM<br>XXX = Specific Device Code<br>M = Date Code<br>. = Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER: 98AON11184D DESCRIPTION: SOD−123−2 1.65x2.70x0.90** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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