NRVB130T1G
Schottky Rectifier, 30 V, 1 A, Single, SOD-123, 2 Pins, 470 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):1A; Diode Configuration:Single; Diode Case Style:SOD-123; No. of Pins:2Pins; Forward Voltage VF Max:470mV; Forward Su
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-123
- Diode Configuration: Single
- Forward Voltage Max: 470mV
- Forward Surge Current: 5.5A
- Average Forward Current: 1A
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 30V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.079 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## MBR130, NRVB130 ## Surface Mount Schottky Power Rectifier **Plastic SOD−123 Package** This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. ## **Features** ## **http://onsemi.com** **SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS** - Guardring for Stress Protection - Low Forward Voltage - 125°C Operating Junction Temperature - Epoxy Meets UL 94 V−0 @ 0.125 in - Package Designed for Optimal Automated Board Assembly - ESD Rating: - ♦ Human Body Model = 3 **==> picture [38 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> SOD−123<br>CASE 425<br>STYLE 1<br>**----- End of picture text -----**<br> - ♦ Machine Model = C - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable - These are Pb−Free Packages* ## **Mechanical Characteristics** - Device Marking: S3 - Polarity Designator: Cathode Band - Weight: 11.7 mg (approximately) - Case: Epoxy, Molded ## **MARKING DIAGRAM** **==> picture [146 x 86] intentionally omitted <==** **----- Start of picture text -----**<br> 1 S3 M<br>S3 = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br> - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MBR130T1G,<br>NRVB130T1G|SOD−123<br>(Pb−Free)|3,000 /<br>Tape & Reel **| |MBR130T3G,<br>NRVB130T3G|SOD−123<br>(Pb−Free)|10,000 /<br>Tape & Reel ***| - ** 8 mm Tape, 7” Reel - *** 8 mm Tape, 13” Reel - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MBR130T1/D** **1** © Semiconductor Components Industries, LLC, 2014 **April, 2013 − Rev. 5** **MBR130, NRVB130** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|30|V| |Average Rectified Forward Current<br>(Rated VR) TL= 65°C|IF(AV)|1.0|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)|IFSM|5.5|A| |Storage Temperature Range|Tstg|−65 to +125|°C| |Operating Junction Temperature|TJ|−65 to +125|°C| |Voltage Rate of Change (Rated VR)|dv/dt|1000|V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction to Ambient (Note 1)|RθJA|230|°C/W| |Thermal Resistance,Junction to Lead(Note 1)|RθJL|108|°C/W| 1. FR−4 or FR−5 = 3.5 × 1.5 inches using a 1 inch Cu pad. ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**| |Instantaneous Forward Voltage (Note 2)<br>(IF= 0.1 A, TJ= 25°C)<br>(IF= 0.7 A, TJ= 25°C)<br>(IF= 1.0 A, TJ= 25°C)|VF|−<br>−<br>0.47|0.35<br>0.45<br>−|V| |Maximum Instantaneous Reverse Current (Note 2)<br>(Rated DC Voltage, TC= 25°C)<br>(VR= 5 V, TC= 25°C)|IR|60<br>10||�A| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2%. **http://onsemi.com** **2** **MBR130, NRVB130** **==> picture [491 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>1 1<br>TJ = 125 ° C TJ = 125 ° C<br>75 ° C 25 ° C 75 ° C 25 ° C<br>0.1 0.1<br>0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65<br>VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)<br>Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage<br>0.01 200<br>TJ = 125 ° C 180<br>0.001 160<br>140<br>75 ° C<br>0.0001 120<br>100<br>0.00001 80<br>25 ° C 60<br>0.000001 40<br>20<br>0.0000001 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30 35<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Typical Capacitance<br>1.8 0.9<br>1.6 RATED 0.8<br>dc VOLTAGE<br>1.4 APPLIED 0.7<br>dc<br>1.2 0.6 SQUARE<br>SQUARE WAVE<br>1 WAVE 0.5<br>0.8 0.4<br>0.6 0.3<br>0.4 0.2<br>0.2 0.1<br>0 0<br>0 20 40 60 80 100 120 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8<br>TL, LEAD TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>CURRENT (AMPS) CURRENT (AMPS)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>IF IF<br>C, CAPACITANCE (pF)<br>, REVERSE CURRENT (AMPS)<br>IR<br>DISSIPATION (WATTS)<br>, AVERAGE FORWARD POWER<br>F(AV)<br>, AVERAGE FORWARD CURRENT (AMPS) P<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 5. Current Derating, Lead, R � JL = 108** � **C/W** **Figure 6. Forward Power Dissipation** **http://onsemi.com** **3** **MBR130, NRVB130** ## **PACKAGE DIMENSIONS** **SOD−123** CASE 425−04 ISSUE G **==> picture [429 x 333] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>A NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>A1 Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>1<br>MILLIMETERS INCHES<br>ÂÂÂÂ DIM MIN NOM MAX MIN NOM MAX<br>A 0.94 1.17 1.35 0.037 0.046 0.053<br>ÂÂÂÂ A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 0.51 0.61 0.71 0.020 0.024 0.028<br>HE E c --- --- 0.15 --- --- 0.006<br>D 1.40 1.60 1.80 0.055 0.063 0.071<br>E 2.54 2.69 2.84 0.100 0.106 0.112<br>HE 3.56 3.68 3.86 0.140 0.145 0.152<br>L 0.25 --- --- 0.010 --- ---<br>0° --- 10° 0° --- 10°<br>2<br>ot<br>STYLE 1:<br>i n b e L PIN 1. CATHODE [aeeeee 2. ANODE<br>C<br>SOLDERING FOOTPRINT*<br>0.91<br>0.036<br>ÉÉ ÉÉ<br>ÉÉ ÉÉ 0.0481.22<br>ÉÉ 1 t ÉÉ h<br>2.36<br>0.093<br>4.19<br>oo 0.165<br>SCALE 10:1 mm<br>: inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : **www.onsemi.com** **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com** **MBR130T1/D** **4**
Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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