NRVB120LSFT1G
Schottky Rectifier, 20 V, 1 A, Single, SOD-123FL, 2 Pins, 650 mV
- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-123FL
- Diode Configuration: Single
- Forward Voltage Max: 650mV
- Forward Surge Current: 50A
- Average Forward Current: 1A
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 20V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.109 € |
| Current stock | 10+ |
| Lead time | 30 days |
**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~ee~~ ## Surface Mount Schottky Power Rectifier ## **Plastic SOD−123 Package** ## **SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS** ## MBR120LSF, NRVB120LSF This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. ## **Features** - Guardring for Stress Protection **==> picture [46 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> SOD−123FL<br>CASE 498<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** **==> picture [116 x 75] intentionally omitted <==** **----- Start of picture text -----**<br> L2L [M]<br>a|(ea<br>L2L = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) - Low Forward Voltage - 125 C Operating Junction Temperature - Epoxy Meets UL 94 V−0 @ 0.125 in - Package Designed for Optimal Automated Board Assembly - ESD Rating: - Human Body Model = 3B - Machine Model = C - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MBR120LSFT1G|SOD−123FL<br>(Pb−Free)|3,000 /<br>Tape & Reel **| |NRVB120LSFT1G|SOD−123FL<br>(Pb−Free)|3,000 /<br>Tape & Reel **| |MBR120LSFT3G|SOD−123FL<br>(Pb−Free)|10,000 /<br>Tape & Reel ***| - ** 8 mm Tape, 7” Reel - *** 8 mm Tape, 13” Reel ## **Mechanical Characteristics** - Device Marking: L2L - Polarity Designator: Cathode Band - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. - Weight: 11.7 mg (approximately) - Case: Epoxy, Molded - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260 C Max. for 10 Seconds Publication Order Number: **MBR120LSFT1/D** **1** Semiconductor Components Industries, LLC, 2014 **January, 2024 − Rev. 5** **MBR120LSF, NRVB120LSF** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|20|V| |Average Rectified Forward Current<br>(At Rated VR, TL= 115C)|IO|1.0|A| |Peak Repetitive Forward Current<br>(At Rated VR, Square Wave, 100 kHz, TL= 110C)|IFRM|2.0|A| |Non−Repetitive Peak Surge Current<br>(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)|IFSM|50|A| |Storage Temperature|Tstg|−55 to 150|C| |Operating Junction Temperature|TJ|−55 to 125|C| |Voltage Rate of Change (Rated VR, TJ= 25C)|dv/dt|10,000|V/ s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL CHARACTERISTICS** **Characteristic Symbol Value Unit** Thermal Resistance − Junction−to−Lead (Note 1) Rtjl 26 C/W Thermal Resistance − Junction−to−Lead (Note 2) Rtjl 21 Thermal Resistance − Junction−to−Ambient (Note 1) Rtja 325 ~~es~~ Thermal Resistance − Junction−to−Ambient (Note 2) Rtja 82 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm[2] ). ## **ELECTRICAL CHARACTERISTICS** |**Characteristic**|**Symbol**|**Value**|**Value**|**Unit**| |---|---|---|---|---| |Maximum Instantaneous Forward Voltage (Note 3), See Figure 2|VF|**TJ = 25****C**|**TJ = 85****C**|V| |(IF= 0.1 A)<br>(IF= 1.0 A)<br>(IF= 3.0 A)||0.34<br>0.45<br>0.65|0.26<br>0.415<br>0.67|| |Maximum Instantaneous Reverse Current (Note 3), See Figure 4|IR|**TJ = 25****C**|**TJ = 85****C**|mA| |(VR= 20 V)<br>(VR= 10 V)||0.40<br>0.10|25<br>18|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** **MBR120LSF, NRVB120LSF** **==> picture [491 x 641] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>TJ = 125C<br>TJ = 85C TJ = 125C<br>4 4a e A<br>1.0 1.0<br>-I|Zf fp L TJ = 85C e<br>=f TJ = 25C<br>Fe, tS OC A<br>———————— TJ = −40C ey TJ = 25C<br>0.1 A A) 0.1 A<br>0.1 0.3 0.5 0.7 0.9 0.1 0.3 0.5 0.7 0.9<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE<br>(VOLTS)<br>Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage<br>100E−3 1.0E+0<br>10E−3 TJ = 125C 100E−3<br>1.0E−3 TJ = 85C 10E−3 TJ = 85C<br>100E−6 1.0E−3<br>TJ = 25C TJ = 25C<br>10E−6 100E−6<br>1.0E−6 SSSS SS S 55 — 10E−6 SS SS<br>0 5.0 10 15 20 0 5.0 10 15 20<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current<br>1.8 0.7<br>dc freq = 20 kHz<br>1.6 fT [| [| |<br>0.6 SQUARE<br>1.4 Ipk/Io = WAVE dc<br>SQUARE 0.5 I pk /I o = 5<br>SSS Eee<br>1.2 WAVE Ipk/Io = 10<br>1.0 ee 0.4 LLL<br>Ipk/Io = Ipk/Io = 20<br>0.8 a a \ \ 0.3 P AS VY<br>Ipk/Io = 5<br>0.6<br>PNM |ee<br>Ipk/Io = 10 0.2<br>0.4<br>Ipk/Io = 20<br>0.1<br>0.2<br>a A \ YE<br>0 es es 0 ee<br>25 45 65 85 105 125 145 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS)<br>, INSTANTANEOUS FORWARD CURRENT (AMPS)iF , INSTANTANEOUS FORWARD CURRENT (AMPS)IF<br>, REVERSE CURRENT (AMPS)<br>IR<br>, MAXIMUM REVERSE CURRENT (AMPS)<br>IR<br>, AVERAGE FORWARD CURRENT (AMPS)IO , AVERAGE POWER DISSIPATION (WATTS)FO<br>P<br>**----- End of picture text -----**<br> **Figure 5. Current Derating** **Figure 6. Forward Power Dissipation** **www.onsemi.comonsemi.com 3** ~~oo~~ **www.onsemi.comonsemi.com** **Share Feedback** Your Opinion Matters **MBR120LSF, NRVB120LSF** **==> picture [487 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 125<br>pn 120 = TT_tN_L_OF<br>a OUI LI<br>115 R JA = 25.6C/W<br>aes ee se TJ = 25 | C E q 110 SPT] QN S S<br>R ee 105 RAR<br>100<br>100 PST TT TT 95 NNNESSRNSE T 130C/W<br>e ee HINA ES<br>90<br>———_——_————| 85 aN\ NeN 235C/W<br>80<br>75 324.9C/W<br>RESRESEESS 70 Fee Se 400C/W<br>10 eee ee 65 eeefF | tf | lcdT dT > MY<br>0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20<br>VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS)<br>Figure 7. Capacitance Figure 8. Typical Operating Temperature<br>Derating*<br>C)<br><br>TEMPERATURE (<br>, DERATED OPERATING<br>J<br>T<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. **==> picture [490 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>D = 0.5<br>100 0.2<br>0.1<br>0.05<br>10 P(pk)<br>0.01<br>t 1<br>t 2<br>1 DUTY CYCLE, D = t1/t2<br>SINGLE PULSE<br>Test Type > Min Pad < Die Size 38x38 @ 75% mils JA = 321.8 C/W<br>0.1 FECHAve atu ety ncaa Eo<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, TIME (sec)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 9. Thermal Response** **www.onsemi.com** **Share Feedback** Your Opinion Matters **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOD−123−2 1.65x2.70x0.90** CASE 498 ISSUE E **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 22 AUG 2023<br>**----- End of picture text -----**<br> **==> picture [103 x 101] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM*<br>XXXM<br>XXX = Specific Device Code<br>M = Date Code<br>. = Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. ## **DOCUMENT NUMBER: 98AON11184D DESCRIPTION: SOD−123−2 1.65x2.70x0.90** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 4, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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