NRVB0530T3G
Small Signal Schottky Diode, Single, 30 V, 500 mA, 430 mV, 5.5 A, 125 °C
- Manufacturer: ONSEMI
- Product type:
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOD-123
- Diode Configuration: Single
- Forward Voltage Max: 430mV
- Forward Surge Current: 5.5A
- Reverse Recovery Time: -
- Average Forward Current: 500mA
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 30V
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 0.079 € |
| Current stock | 10+ |
| Lead time | 30 days |
## **Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** ~~onsem~~ Surface Mount **SCHOTTKY BARRIER** Schottky Power Rectifier **RECTIFIER** ## **SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 30 VOLTS** ## **Plastic SOD−123 Package** ## MBR0530, NRVB0530 The MBR0530 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. These state−of−the−art devices have the following features: ## **Features** - Guardring for Stress Protection - Low Forward Voltage - 125°C Operating Junction Temperature - Epoxy Meets UL 94, V−0 @ 0.125 in - Package Designed for Optimal Automated Board Assembly - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable **==> picture [38 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> SOD−123<br>CASE 425<br>STYLE 1<br>**----- End of picture text -----**<br> **==> picture [103 x 83] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING DIAGRAM<br>B3 M<br>1<br>|a:<br>B3 = Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) - These Devices are Pb−Free and are RoHS Compliant* ## **Mechanical Characteristics** - Polarity Designator: Cathode Band - Weight: 11.7 mg (approximately) - Case: Epoxy, Molded - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |MBR0530T1G|SOD−123<br>(Pb−Free)|3,000 /<br>Tape & Reel **| |NRVB0530T1G|SOD−123<br>(Pb−Free)|3,000 /<br>Tape & Reel **| |MBR0530T3G|SOD−123<br>(Pb−Free)|10.000 /<br>Tape & Reel ***| **DISCONTINUED** (Note 1) NRVB0530T3G SOD−123 10.000 / (Pb−Free) Tape & Reel *** ~~7~~ ** 8 mm Tape, 7” Reel *** 8 mm Tape, 13” Reel - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. **DISCONTINUED:** This device is not recommended for new design. Please contact your **onsemi** representative for information. The most current information on this device may be available on www.onsemi.com. > *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **MBR0530T1/D** **1** © Semiconductor Components Industries, LLC, 2014 **October, 2024 − Rev. 9** **MBR0530, NRVB0530** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|30|V| |Average Rectified Forward Current<br>(Rated VR, TL= 100°C)|IF(AV)|0.5|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|5.5|A| |Storage Temperature Range|Tstg|−65 to +150|°C| |Operating Junction Temperature|TJ|−65 to +125|°C| |Voltage Rate of Change (Rated VR)<br>~~QO~~|dv/dt<br>~~QO~~|1000<br>~~QO~~|V/ s<br>~~QO~~| |ESD Rating:<br>Machine Model = C<br>Human Body Model = 3B||> 400<br>> 8000|V| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Thermal Resistance − Junction−to−Ambient (Note 2)|R JA|206|°C/W| |Thermal Resistance − Junction−to−Lead|R JL|150|°C/W| 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Instantaneous Forward Voltage (Note 3)<br>(iF= 0.1 Amps, TJ= 25°C)<br>(iF= 0.5 Amps, TJ= 25°C)|vF|0.375<br>0.43|V| |Maximum Instantaneous Reverse Current (Note 3)<br>(Rated DC Voltage, TC= 25°C)<br>(VR= 15 V, TC= 25°C)|IR|130<br>20|A| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle m ≤ 2%. **==> picture [491 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4]<br>a ee ————<br>a a<br>1 ————— ee o e < 1000 ma aa TJ = 125°C reee e e<br>Ot FE 5 ———————<br>a oe [_eo<br>TJ = 125°C 75°C 25°C °C 100 75°C<br>7 A| f/f a, | Oowi ——————SSS — $< — —— — $_ — —|<br>(Jp) a<br>0.1<br>10<br>[4 ss ss = —————— eS<br>pr eee<br>25°C<br>aa | 1 SS—_———————eeSEE<br>PO ——<br>0.010.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0 5 10 15 20 25 30 35 40<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>iF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage** **Figure 2. Typical Reverse Current** **www.onsemi.com** **Share Feedback** Your Opinion Matters **2** **MBR0530, NRVB0530** **==> picture [243 x 606] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>160 TYPICAL CAPACITANCE AT 0 V = 170 pF<br>140 te | ||<br>120 ee<br>100 [A<br>80 A<br>60 es ee<br>40<br>ee<br>20 oo<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Typical Capacitance<br>1<br>0.875 “CELL LLLLEL<br>0.75 Pere DC<br>0.625 SQUARE WAVE<br>PTS<br>0.5 PSE<br>=<br>0.375<br>am... = 5 eNEee<br>0.25 S = 10 SR<br>0.125 SOE Ipk/Iav = 20<br>0 PySTSS SS<br>60 67 74 81 88 95 102 109 116 123 130<br>LEAD TEMPERATURE (°C)<br>Figure 4. Current Derating (Lead)<br>0.35<br>0.315 TJ = 125°C<br>SQUARE WAVE<br>0.28 py DC<br>=<br>0.245 Fo to K |<br>= 10 = 5<br>0.21 | || |[| | cplAA 7sLY| |<br>0.175 Ipk/Iav = 20<br>0.14 LL WH C/A Y<br>0.105 | |S ferAnn| |<br>0.07<br>/) Aa<br>0.035 Li VWUYy | | | | |<br>0 Zee ee<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>IF(AV), AVERAGE FORWARD CURRENT (AMP)<br>C, CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (AMP)<br>PF(AV), AVERAGE POWER DISSIPATION (WATT)<br>**----- End of picture text -----**<br> **Figure 5. Power Dissipation** PACKAGE DIMENSIONS **www.onsemi.com 3** ~~—~~ **Share Feedback** Your Opinion Matters MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOD−123 2−LEAD, 1.60x2.69x1.16** CASE 425 ISSUE H DATE 29 FEB 2024 **==> picture [119 x 33] intentionally omitted <==** **----- Start of picture text -----**<br> Ө 1<br>Ө 1<br>ee<br>**----- End of picture text -----**<br> ## **GENERIC** ## **MARKING DIAGRAM*** **==> picture [103 x 62] intentionally omitted <==** **----- Start of picture text -----**<br> XXXM<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) - *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42927B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOD−123 2−LEAD, 1.60x2.69x1.16 PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at April 27, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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