NRTS10100PFST3G

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## Schottky Barrier Rectifier, **-** Trench based 

## NRTS10100PFS, NRVTS10100PFS 

This TO-277 trench Schottky rectifier provides fast switching performance in a compact thermally efficient package. The TO-277 package provides an excellent alternative to the DPAK, offering thermal performance nearly as good in a package occupying less than half the board space. Its low profile makes it a good option for flat panel display and other applications with limited vertical clearance. The device offers low leakage over temperature making it a good match for applications requiring low quiescent current. 

## **Features** 

- Package Provides Capability of Inspection and Probe After Board Mounting 

- Low Forward Voltage Drop 

- 175 °C Operating Junction Temperature 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 

- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

## **SCHOTTKY BARRIER RECTIFIER, 10 AMPERES 100 VOLTS** 

||3<br>1<br>2<br>~~ov~~|3<br>1<br>2<br>~~ov~~|
|---|---|---|
|||**TO-277-3LD**|
|||**CASE 340CZ**|
|3<br>Anode 1<br>Anode 2<br>Cathode<br>~~ook~~|||
||**MARKING DIAGRAM**<br>T10100<br>AWLYW<br>||||
||T10100<br>A|= Specific Device Code<br>= Assembly Location|
||Y|= Year|
||W|= Work Week|
||WL|= Wafer Lot|



- Case: Epoxy, Molded 

- Epoxy Meets Flammability Rating UL 94-0 @ 0.125 in. 

- Lead Finish: 100% Matte Sn (Tin) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

## **Applications** 

- Excellent Alternative to DPAK in Space-Constrained Automotive Applications 

- Low Leakage for Higher Temperature Operation 

- Output Rectification in Compact Portable Consumer Applications 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NRTS10100PFST3G|TO-277<br>(Pb-Free)|5000 /<br>Tape & Reel|
|NRVTS10100PFST3G|TO-277<br>(Pb-Free)|5000 /<br>Tape & Reel|



   - For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

- Freewheeling Diode used with Inductive Loads 

Publication Order Number: **NRTS10100PFS/D** 

**1** 

© Semiconductor Components Industries, LLC, 2020 **November, 2025 − Rev. 2** 

**NRTS10100PFS, NRVTS10100PFS** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(TC= 162°C)|IF(AV)|10|A|
|Peak Repetitive Forward Current,<br>(TC= 159°C, Square Wave, Duty = 0.5)|IFRM|20|A|
|Non-Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|120|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature|TJ|−55 to +175|°C|
|ESD Rating (Human Body Model)||3B||
|ESD Rating (Machine Model)||M4||



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction-to-Ambient<br>(Assumes 600 mm2, 1 oz. copper bond pad on a FR4 board)|RθJA|69|°C/W|
|Thermal Resistance, Junction-to-Case, Top<br>(Assumes 600 mm2, 1 oz. copper bond pad on a FR4 board)|RθJCT|60|°C/W|
|Thermal Resistance, Junction-to-Case, Bottom<br>(Assumes 600 mm2, 1 oz. copper bond pad on a FR4 board)|RθJCB|2.0|°C/W|



## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**|
|Instantaneous Forward Voltage (Note 1)<br>(iF= 5 A, TJ= 25°C)<br>(iF= 5 A, TJ= 125°C)<br>(iF= 10 A, TJ= 25°C)<br>(iF= 10 A, TJ= 125°C)|vF|0.58<br>0.54<br>0.73<br>0.65|−<br>−<br>0.78<br>0.70|V|
|Instantaneous Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|iR|5.6<br>4.5|100<br>51|A<br>mA|
|Junction Capacitance<br>(VR= 1 V, TJ= 125°C, 1 MHz)|CJ|760|−|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. 

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**NRTS10100PFS, NRVTS10100PFS** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100 1.E+00<br>== 1.E−011.E−02 TA = 175  ° C<br>10 -| TA = 150  ° CTA = 175  _ Ae ° C 1.E−031.E−04 ee TTTAAA=== 150  125  85  °°° CCC<br>1.E−05<br>HF T A = 125  ° C — 1.E−06 ———S=——— TA = 25  ° C<br>1 TA = 85  ° C 1.E−07 TA = −40  ° C<br>Tf TA = 25  ° C 1.E−081.E−09 a TA = −55  ° C<br>T A = −40  ° C 1.E−10<br>0.1 elHiif-= TA = −55  ° C 1.E−11 ————————_——_SS<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 60 70 80 90 100<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Typical Reverse Characteristics<br>Characteristics<br>10,000 40<br>TJ = 25  ° C 35 R T JC J = 175   = 2.0 ° ° C/W C<br>30<br>1000 AS DC<br>25<br>Square Wave<br>20<br>(Duty = 0.5)<br>th 15 sott+ $N<br>100<br>rN<br>10<br>5<br>10 el 0 Pt | | ee | NN<br>0.1 1 10 100 25 40 55 70 85 100 115 130 145 160 175<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>CURRENT (A)<br>, INSTANTANEOUS FORWARD<br>IF<br>, INSTANTANEOUS REVERSE CURRENT (A)<br>IR<br>C, JUNCTION CAPACITANCE (pF) , AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 3. Typical Junction Capacitance** 

**Figure 4. Current Derating** 

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**NRTS10100PFS, NRVTS10100PFS** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
10<br>TJ = 175  ° C<br>8<br>Square Wave<br>(Duty = 0.5)<br>itt |<br>6<br>DC<br>EERREEE Zoe<br>4 ERED? Zane<br>2<br>ja<br>0 =acne<br>0 2 4 6 8 10<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 5. Forward Power Dissipation<br>100<br>50% (DUTY CYCLE)<br>20%<br>10 rn 10%<br>5.0%<br>2.0%<br>1 1.0%<br>0.1<br>0.01 SINGLE PULSE<br>(Assumes 600 mm [2] , 1 oz. copper bond pad on a FR4 board)<br>0.001 ES el<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (s)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>R(t) (C/W)<br>**----- End of picture text -----**<br>


**Figure 6. Typical Thermal Characteristics, Junction-to-Ambient** 

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**NRTS10100PFS, NRVTS10100PFS** 

## **REVISION HISTORY** 

|**Revision**|**Description of Changes**|**Date**|
|---|---|---|
|0|Initial datasheet release for production.|02/12/2020|
|1|Rebranded the Data Sheet to**onsemi**format.|10/27/2025|
|2|Corrected shipping quantity from 1500 to 5000.|11/12/2025|



This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **TO−277−3 4.40x6.10x1.10, 2.13P** CASE 340CZ ISSUE B 

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DATE 04 MAY 2026<br>**----- End of picture text -----**<br>


## **GENERIC** 

## **MARKING DIAGRAM*** 

XXXXXX = Specific Device Code *This information is generic. Please refer to A = Assembly Location device data sheet for actual part marking. XXXXXX Y = Year Pb−Free indicator, “G” or microdot “ ”, AWLYW W = Work Week may or may not be present. Some products WL = Wafer Lot may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **98AON97727G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **TO−277−3 4.40x6.10x1.10, 2.13P PAGE 1 OF 1** 

## **DOCUMENT NUMBER:** 

## **DESCRIPTION: TO−277−3 4.40x6.10x1.10, 2.13P** 

**PAGE 1 OF 1** 

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