NP36P04SDG-E1-AY

Datasheet 

## **NP36P04SDG** 

-40V – -36A – P-channel Power MOS FET Application : Automotive 

R07DS1519EJ0100 Rev.1.00 Jun. 17, 2022 

## **Description** 

This product is P-channel MOS Field Effect Transistor designed for high current switching applications. 

## **Features** 

- Super low on-state resistance : RDS(on) = 17.0 m Max. ( VGS = -10 V, ID = -18 A ) RDS(on) = 23.5 m Max. ( VGS = -4.5 V, ID = -18 A ) 

- Low input capacitance : Ciss = 2800 pF Typ. 

- Designed for automotive application and AEC-Q101 qualified. 

- Pb-free (This product does not contain Pb in the external electrode) 

## **Outline** 

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4<br>Drain<br>1       2       3 Gate<br>1. Gate<br>2. Drain<br>3. Source<br>4. Drain(Fin) Source<br>MP-3ZK (TO-252) Equivalent circuit<br>**----- End of picture text -----**<br>


Equivalent circuit 

## **Absolute Maximum Ratings** 

(Ta=25°C) 

||||(Ta=25°C)|
|---|---|---|---|
|**Item**|**Symbol**|**Ratings **|**Unit**|
|Drain to Source Voltage(VGS= 0 V)|VDSS|-40|V|
|Gate to Source Voltage(VDS= 0 V)|VGSS|20|V|
|Drain Current(DC) (Tc= 25 °C)|ID(DC)|36|A|
|Drain Current(pulse)|ID(pulse)<br>Notes1|108|A|
|Total Power Dissipation(Tc= 25 °C)|PT1|56|W|
|Total Power Dissipation(Ta= 25 °C)|PT2|1.2|W|
|Channel Temperature|Tch|175|°C|
|Storage Temperature|Tstg|-55 to 175|°C|
|Single Avalanche Current|IAS<br>Notes2|26|A|
|Single Avalanche Energy|EAS<br>Notes2|67|mJ|



Notes 1. PW  10 s , Duty Cycle  1% 

2. Starting Tch=25 ℃ , VDD = -20V , RG = 25  , VGS = -20  0V , L = 100H 

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NP36P04SDG 

## **Thermal Resistance** 

Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance 

Rth(ch-c) Notes3 2.68 °C/W Rth(ch-a) Notes3 125 °C/W 

## **Electrical Characteristics** 

(Ta=25°C) 

|||||||(Ta=25°C)|
|---|---|---|---|---|---|---|
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|Zero Gate Voltage Drain Current|IDSS|—|—|-10|A|VDS= -40 V, VGS= 0 V|
|Gate Leakage Current|IGSS|—|—|100|nA|VGS=20 V, VDS= 0 V|
|Gate to Source Threshold Voltage|VGS(th)|-1.0|-1.6|-2.5|V|VDS= VGS, ID= -250μA|
|Forward Transfer Admittance|| yfs| Notes4|12|23|—|S|VDS= -10 V, ID= -18 A|
|Drain to Source On-state Resistance|RDS(on)1<br>Notes4|—|12.5|17.0|m|VGS= -10 V, ID= -18 A|
||RDS(on)2<br>Notes4|—|15.4|23.5|m|VGS= -4.5 V, ID= -18 A|
|Input Capacitance|Ciss|—|2800|—|pF|VDS= -10 V<br>VGS= 0 V<br>f = 1 MHz|
|Output Capacitance|Coss|—|450|—|pF||
|Reverse Transfer Capacitance|Crss|—|280|—|pF||
|Turn-on DelayTime|td(on)|—|8|—|ns|VDD= -20 V<br>ID= -18 A<br>VGS= -10 V<br>RG= 0|
|Rise Time|tr|—|10|—|ns||
|Turn-off DelayTime|td(off)|—|250|—|ns||
|Fall Time|tf|—|140|—|ns||
|Total Gate Charge|Qg|—|55|—|nC|VDD= -32 V<br>VGS= -10 V<br>ID= -36 A|
|Gate to Source Charge|Qgs|—|7|—|nC||
|Gate to Drain Charge|Qgd|—|15|—|nC||
|BodyDiode Forward Voltage|VF(S-D)<br>Notes4|—|0.95|1.5|V|IF= -36 A, VGS= 0 V|
|Reverse RecoveryTime|trr|—|44|—|ns|IF= -36 A, VGS= 0 V<br>di/dt = -100 A/s|
|Reverse RecoveryCharge|Qrr|—|51|—|nC||



Notes 3.  Designed target value on Renesas measurement condition. Not subject to production test. 

4.  Pulse test. 

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NP36P04SDG 

## **Typical Characteristics** 

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NP36P04SDG 

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NP36P04SDG 

## **Test Circuit** 

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Avalanche<br>Test Circuit Waveform<br>V(BR)DSS<br>L IAS<br>ID<br>VDD<br>RG D.U.T. VDD VDS<br>VGS EAS = [1] 2 ・ V(BR)DSS<br>2 [・L・] [I][AS] V(BR)DSS  -  VDD<br>Switching Time<br>Test Circuit Waveform<br>RL 90%<br>VGS 10%<br>RG D.U.T. VDD VDS 90% 90%<br>1 0% 10%<br>VGS<br>td(on) tr td(off) tf<br>Gate Charge<br>Test Circuit Waveform<br>VDS<br>RL<br>IG Qg<br>D.U.T. VDD<br>VGS<br>VGS<br>Qgs Qgd<br>Reverse Recovery<br>Test Circuit Waveform<br>IF<br>IF<br>D.U.T. trr<br>L<br>0<br>di/dt Qrr<br>RG VDD<br>VGS<br>**----- End of picture text -----**<br>


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NP36P04SDG 

## **Package Dimensions** 

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6.5 ± 0.2 2.3 ± 0.1<br>5.1 0.5 ± 0.1<br>4.3 Min.<br>4<br>Pin No.<br>1 2 3<br>1.14 Max. 0.76 ± 0.12 0 to 0.25<br>0.5 ± 0.1<br>2.3 2.3<br>1.0<br>Unit : mm<br>Mass : 0.3g<br>1.0<br>4.0 Min.<br>6.1 ± 0.2 10.4 Max. (9.8)<br>0.51 Min.<br>0.8<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Information**|||
|---|---|---|
|**Part No.**|**Quantity**|**Shipping container**|
|NP36P04SDG-E1-AY|2500pcs/reel|Taping|



Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 

R07DS1519EJ0100 Rev.1.00 Jun.17.2022 

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