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NP29N04QUK-E1-AY
Dual MOSFET, Dual N Channel, 40 V, 30 A, 0.0101 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: RENESAS
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Dual N Channel
- Product Range: NP29N04QUK Series
- Qualification: AEC-Q101
- Transistor Case Style: HSON
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 44W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 30A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.0101ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 2500 |
| Price | 0.696 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Data Sheet
## **NP29N04QUK**
## 40 V – 30 A – Dual N-channel Power MOS FET A lication: Automotive pp
R07DS1329EJ0200 Rev. 2.00 May 24, 2018
## **Description**
NP29N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
## **Features**
- Super low on-state resistance
- RDS(on) = 10.1 m MAX. (VGS = 10 V, ID = 15 A)
- Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual
## **Outline**
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
## **Ordering Information**
|**Part No.**|**Lead Plating**|**Packing**|**Packing**|**Package **|
|---|---|---|---|---|
|NP29N04QUK-E1-AY*1|Pure Sn (Tin)|Tape 2500 p/reel|Taping (E1 type)|8-pin HSON dual|
|NP29N04QUK -E2-AY*1|||Taping (E2 type)||
Note: * 1. Pb-free (This product does not contain Pb in the external electrode)
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NP29N04QUK
## **Absolute Maximum Ratings** (TA = 25°C)
|**Item**|**Symbol**|**Ratings **|**Unit**|
|---|---|---|---|
|Drain to Source Voltage(VGS= 0 V)|VDSS|40|V|
|Gate to Source Voltage(VDS= 0 V)|VGSS|±20|V|
|Drain Current(DC) (TC= 25C) 4|ID(DC)|±30|A|
|Drain Current(pulse) 1, 4, 5|ID(pulse)|±60|A|
|Total Power Dissipation(TC= 25C) 4|PT1|44|W|
|Total Power Dissipation(TA= 25C) 2, 4|PT2|1.0|W|
|Channel Temperature|Tch|175|C|
|Storage Temperature|Tstg|55 to175|C|
|Repetitive Avalanche Current3, 5|IAR|17|A|
|Repetitive Avalanche Energy 3, 5|EAR|30|mJ|
## **Thermal Resistance**
Channel to Case Thermal Resistance Rth(ch-C)[ *5] 3.37 C/W Channel to Ambient Thermal Resistance[][2] Rth(ch-A)[ *5] 150 C/W
Notes: * 1. TC = 25°C, PW 10 s, Duty Cycle 1%
- 2. Mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m)
- 3. RG = 25 , VGS = 20 V 0 V
- 4. One channel operation
- *5. Not subject of production test. Verified by design/characterization.
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NP29N04QUK
## **Electrical Characteristics** (TA = 25°C)
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|---|---|---|---|---|---|---|
|Zero Gate Voltage Drain|Current<br>IDSS|||1|A|VDS= 40 V, VGS= 0 V|
|Gate Leakage Current|IGSS|||±100|nA|VGS= ±20 V, VDS= 0 V|
|Gate to Source Threshol|d Voltage<br>VGS(th)|2.0|3.0|4.0|V|VDS= VGS, ID= 250A|
|Forward Transfer Admitt|ance1<br>| yfs||10|17||S|VDS= 5 V, ID= 15 A|
|Drain to Source On-stat|e Resistance1<br>RDS(on)1||8.5|10.1|m|VGS= 10 V, ID= 15 A|
|Input Capacitance*2|Ciss||1000|1500|pF|VDS= 25 V,<br>VGS= 0 V,<br>f = 1 MHz|
|Output Capacitance*2|Coss||150|230|pF||
|Reverse Transfer Capac|itance*2<br>Crss||70|130|pF||
|Turn-on DelayTime*2|td(on)||14|28|ns|VDD= 20 V, ID= 15 A,<br>VGS= 10 V,<br>RG= 0|
|Rise Time*2|tr||4|10|ns||
|Turn-off DelayTime*2|td(off)||30|60|ns||
|Fall Time*2|tf||6|15|ns||
|Total Gate Charge*2|QG||19|29|nC|VDD= 32 V,<br>VGS= 10 V,<br>ID= 30 A|
|Gate to Source Charge|QGS||6||nC||
|Gate to Drain Charge|QGD||5||nC||
|BodyDiode Forward Vol|tage1<br>VF(S-D)||0.9|1.5|V|IF= 30 A, VGS= 0 V|
|Reverse RecoveryTime|<br>trr||30||ns|IF= 30 A, VGS= 0 V,<br>di/dt = 100 A/s|
|Reverse RecoveryChar|ge<br>Qrr||31||nC||
Note: *1. Pulsed test Note: *2. Not subject of production test. Verified by design/characterization.
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NP29N04QUK
## **Typical Characteristics** (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
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120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br> TC - Case Temperature - C<br> dT - Percentage of Rated Power - %<br>**----- End of picture text -----**<br>
## TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
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50<br>40<br>30<br>20<br>10<br>0<br>0 50 100 150 200<br> TC - Case Temperature - C<br> – Total Power Dissipation - W Pt<br>**----- End of picture text -----**<br>
## FORWARD BIAS SAFE OPERATING AREA
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1000<br>100 ID(pulse)=60A<br>ID(DC)=30A<br>10<br>Power Dissipation Limited<br>1<br>Secondary Breakdown Limited<br>0.1<br>TC=25 ℃<br>Single Pulse<br>0.01<br>0.1 1 10 100<br> - Drain Current - A<br>D<br> I<br>**----- End of picture text -----**<br>
VDS - Drain to Source Voltage – V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
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1000<br>R th(ch-A) = 150°C/W<br>100<br>10<br>R th(ch-C) = 3.37°C/W<br>1<br>0.1<br>One channel operation<br>Single pulse<br>Mounted on glass epoxy substrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area(35m)<br>0.01<br>100 1 m 10 m 100 m 1 10 100 1000<br> PW - Pulse Width - s<br>C/W<br><br> - Transient Thermal Resistance -<br>th(t)<br> R<br>**----- End of picture text -----**<br>
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NP29N04QUK
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
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70<br>60<br>50<br>40<br>30<br>20<br>10 VGS=10V<br>Pulsed<br>0<br>0 0.2 0.4 0.6<br> VDS - Drain to Source Voltage - V<br> - Drain Current - A<br>ID<br>**----- End of picture text -----**<br>
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
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4<br>3<br>2<br>1<br>VDS = VGS<br>ID=250A<br>0<br>-100 -50 0 50 100 150 200<br> Tch - Channel Temperature - C<br>– Gate to Source Threshold Voltage - V<br>GS(th)<br>V<br>**----- End of picture text -----**<br>
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
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20<br>16<br>12<br>8<br>4<br>VGS=10V<br>Pulsed<br>0<br>0.1 1 10 100<br> ID - Drain Current - A<br><br> - Drain to Source On-state Resistance - m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
## FORWARD TRANSFER CHARACTERISTICS
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100<br>10 TA=175°C125°C<br>75°C<br>25°C<br>1 -40°C<br>-55°C<br>0.1<br>0.01<br>VDS = 10V<br>Pulsed<br>0.001<br>0 1 2 3 4 5 6<br> - Drain Current - A<br>ID<br>**----- End of picture text -----**<br>
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
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100<br>TA=175°C<br>125°C<br>75°C<br>25°C<br>-40°C<br>-55°C<br>10<br>VDS = 5V<br>Pulsed<br>1<br>0.1 1 10 100<br> | - Forward Transfer Admittance - S<br>fs<br> | y<br>**----- End of picture text -----**<br>
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ID - Drain Current - A<br>**----- End of picture text -----**<br>
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
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20<br>16 ID= 6A<br>15A<br>30A<br>12<br>8<br>4<br>Pulsed<br>0<br>0 5 10 15 20<br> VGS - Gate to Source Voltage - V<br><br> - Drain to Source On-state Resistance - m<br>DS(on)<br> R<br>**----- End of picture text -----**<br>
R07DS1329EJ0200 Rev. 2.00 May 24, 2018
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NP29N04QUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
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20<br>Pulsed<br>16<br>12<br>8<br>4<br>VGS=10V<br>ID=15A<br>0<br>-100 -50 0 50 100 150 200<br> Tch - Channel Temperature - C<br><br> - Drain to Source On-state Resistance - m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
SWITCHING CHARACTERISTICS
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1000<br>VDD = 20V<br>VGS=10V<br>RG=0Ω<br>100<br>td(off)<br>td(on)<br>10<br>tf<br>tr<br>1<br>0.1 1 10 100<br> ID - Drain Current - A<br>SOURCE TO DRAIN DIODE FORWARD VOLTAGE<br>100<br>VGS=10V<br>10<br>VGS=0V<br>1<br>Pulsed<br>0.1<br>0 0.2 0.4 0.6 0.8 1 1.2<br> VF(S-D) - Source to Drain Voltage - V<br> td(on),tr,td(off),tr – Switching Time - ns<br> - Diode Forward Current - A F<br> I<br>**----- End of picture text -----**<br>
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
## CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
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10000<br>Ciss<br>1000<br>Coss<br>100<br>Crss<br>VGS = 0V<br>f = 1.0MHz<br>10<br>0.01 0.1 1 10 100<br>S<br>i<br> - Capacitance - pF<br>rss Ad<br>, Coss f<br>, C<br>iss T<br>C<br>**----- End of picture text -----**<br>
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VDS - Drain to Source Voltage - V<br>**----- End of picture text -----**<br>
DYNAMIC INPUT CHARACTERISTICS
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35 14<br>30 VDD= 32V 12<br>20V<br>8V<br>25 10<br>20 8<br>15 6<br>VGS<br>10 4<br>5 VDS 2<br>ID=30A<br>0 0<br>0 4 8 12 16 20<br> QG - Gate Charge - nC<br> - Drain to Source Voltage - V<br>DS<br> V VGS - Gate to Source Voltage - V<br>**----- End of picture text -----**<br>
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REVERSE RECOVERY TIME vs.<br>DRAIN CURRENT<br>100<br>10<br>di/dt = 100A/μs<br>VGS = 0V<br>1<br>0.1 1 10 100<br> IF - Drain Current - A<br> – Reverse Recovery Time - ns<br>rr<br> t<br>**----- End of picture text -----**<br>
R07DS1329EJ0200 Rev. 2.00 May 24, 2018
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NP29N04QUK
## **Package Drawings** (Unit: mm)
## **8-pin HSON Dual (Mass: 0.12 g TYP.)**
Renesas package code: PLSN0008DA-A
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R07DS1329EJ0200 Rev. 2.00 May 24, 2018
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## **Revision History**
## **NP29N04QUK Data Sheet**
|**Rev.**|**Date**||**Description**|
|---|---|---|---|
|||**Page **|**Summary**|
|1.00|Mar 28, 2016|—|First Edition Issued|
|2.00|May 24,2018|2<br>3|Note 5 was added<br>Note 2 was added|
All trademarks and registered trademarks are the property of their respective owners.
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