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NP23N06YDG-E1-AY
Power MOSFET, N Channel, 60 V, 23 A, 0.027 ohm, HSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: RENESAS
- Product type:
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: NP23N06YDG Series
- Qualification: AEC-Q101
- Power Dissipation: 60W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: HSON
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 23A
- Drain Source On State Resistance: 0.027ohm
- Gate Source Threshold Voltage Max: 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 2500 |
| Price | 0.421 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Preliminary Data Sheet
## **NP23N06YDG**
## MOS FIELD EFFECT TRANSISTOR
R07DS0014EJ0100 Rev.1.00 Jul 01, 2010
## **Description**
The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
## **Features**
- Low on-state resistance
- ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
- Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON
## **Ordering Information**
|**Ordering Information**||||
|---|---|---|---|
|**Part No.**|**LEAD PLATING**|**PACKING**|**Package **|
|NP23N06YDG -E1-AY∗1|Pure Sn (Tin)|Tape 2500 p/reel|8-pin HSON, Taping (E1 type)|
|NP23N06YDG -E2-AY∗1|||8-pin HSON, Taping (E2 type)|
Note:[∗] 1. Pb-free (This product does not contain Pb in the external electrode.)
## **Absolute Maximum Ratings (TA = 25** ° **C)**
|**Absolute Maximum Ratings**|**(TA = 25**°**C)**|||
|---|---|---|---|
|**Item**|**Symbol**|**Ratings **|**Unit**|
|Drain to Source Voltage(VGS= 0 V)|VDSS|60|V|
|Gate to Source Voltage(VDS= 0 V)|VGSS|±20|V|
|Drain Current(DC) (TC= 25°C)|ID(DC)|±23|A|
|Drain Current(pulse) ∗1|ID(pulse)|±46|A|
|Total Power Dissipation(TC= 25°C)|PT1|60|W|
|Total Power Dissipation(TA= 25°C) ∗2|PT2|1.0|W|
|Channel Temperature|Tch|175|°C|
|Storage Temperature|Tstg|−55 to+175|°C|
|Repetitive Avalanche Current∗3|IAR|11|A|
|Repetitive Avalanche Energy ∗3|EAR|12|mJ|
## **Thermal Resistance**
Channel to Case Thermal Resistance Rth(ch-C) 2.5 ° C/W Channel to Ambient Thermal Resistance[∗][2] Rth(ch-A) 150 ° C/W
Notes:[∗] 1. TC = 25 ° C, PW ≤ 10 μ s, Duty Cycle ≤ 1%
- ∗ 2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
- *3. Tch(peak) ≤ 150 ° C, RG = 25 Ω
R07DS0014EJ0100 Rev.1.00 Jul 01, 2010
Page 1 of 6
**NP23N06YDG**
## **Electrical Characteristics (TA = 25** ° **C)**
|**Item**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Conditions**|
|---|---|---|---|---|---|---|
|Zero Gate Voltage Drain Current|IDSS|||1|μA|VDS= 60 V, VGS= 0 V|
|Gate Leakage Current|IGSS|||±100|nA|VGS=±20 V, VDS= 0 V|
|Gate to Source Threshold Voltage|VGS(th)|1.4|1.8|2.5|V|VDS= VGS, ID= 250μA|
|Forward Transfer Admittance∗1|| yfs||9.0|18||S|VDS= 5 V, ID= 11.5 A|
|Drain to Source On-state<br>Resistance∗1|RDS(on)1||22|27|mΩ|VGS= 10 V, ID= 11.5 A|
||RDS(on)2||24|37|mΩ|VGS= 5 V, ID= 11.5 A|
|Input Capacitance|Ciss||1200|1800|pF|VDS= 25 V,<br>VGS= 0 V,<br>f = 1 MHz|
|Output Capacitance|Coss||100|150|pF||
|Reverse Transfer Capacitance|Crss||70|130|pF||
|Turn-on DelayTime|td(on)||12|24|ns|VDD= 30 V, ID= 11.5 A,<br>VGS= 10 V,<br>RG= 0Ω|
|Rise Time|tr||6|15|ns||
|Turn-off DelayTime|td(off)||36|72|ns||
|Fall Time|tf||4|10|ns||
|Total Gate Charge|QG||27|41|nC|VDD= 48 V,<br>VGS= 10 V,<br>ID= 23 A|
|Gate to Source Charge|QGS||5||nC||
|Gate to Drain Charge|QGD||8||nC||
|BodyDiode Forward Voltage∗1|VF(S-D)||0.9|1.5|V|IF= 23 A, VGS= 0 V|
|Reverse RecoveryTime|trr||32||ns|IF= 23 A, VGS= 0 V,<br>di/dt = 100 A/μs|
|Reverse RecoveryCharge|Qrr||37||nC||
Note:[∗] 1. Pulsed
## **TEST CIRCUIT 1 AVALANCHE CAPABILITY**
## **TEST CIRCUIT 2 SWITCHING TIME**
**==> picture [476 x 137] intentionally omitted <==**
**----- Start of picture text -----**<br>
D.U.T. D.U.T.<br>PG. RG = 25 Ω L PG. RG RL VWave FormGS VGS0 10% VGS 90%<br>50 Ω VDD VDD<br>VGS = 20 → 0 V VDS<br>90% 90%<br>BVDSS V0 GS VDS V0DS 10% 10%<br>IAS Wave Form<br>ID VDS τ td(on) tr td(off) tf<br>VDD<br>τ = 1 sμ ton toff<br>Duty Cycle ≤ 1%<br>Starting Tch<br>**----- End of picture text -----**<br>
## **TEST CIRCUIT 3 GATE CHARGE**
**==> picture [122 x 60] intentionally omitted <==**
**----- Start of picture text -----**<br>
D.U.T.<br>IG = 2 mA RL<br>PG.<br>50 Ω VDD<br>**----- End of picture text -----**<br>
R07DS0014EJ0100 Rev.1.00 Jul 01, 2010
Page 2 of 6
**NP23N06YDG**
## **Typical Characteristics (TA = 25** ° **C)**
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
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**----- Start of picture text -----**<br>
100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br> dT - Percentage of Rated Power - %<br>**----- End of picture text -----**<br>
TC - Case Temperature - ° C
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
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**----- Start of picture text -----**<br>
70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175<br> - Total Power Dissipation - W<br>T<br> P<br>**----- End of picture text -----**<br>
TC - Case Temperature - ° C
FORWARD BIAS SAFE OPERATING AREA
**==> picture [414 x 412] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>100<br>ID(pulse)<br>10<br>Power Dissipation Limited<br>1<br>TC = 25 ° C<br>Single Pulse<br>0.1<br>0.1 1 10 100<br> VDS - Drain to Source Voltage - V<br> TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH<br>1000<br>Rth(ch-A) = 150 ° C/W<br>100<br>10<br>Rth(ch-C) = 2.5 ° C/W<br>1<br>0.1<br>Single pulse<br>Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt<br>0.01<br>100 μ 1 m 10 m 100 m 1 10 100 1000<br> PW - Pulse Width - s<br>R(VDS(on)GS Lim = 110 V) 1 ited<br>PW = 1100 μ s<br>1 s<br>110 m<br>11m 1 s<br> - Drain Current - A<br>D<br> I<br>th(t)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
C/W<br>°<br> - Transient Thermal Resistance -<br>th(t)<br> r<br>**----- End of picture text -----**<br>
R07DS0014EJ0100 Rev.1.00 Jul 01, 2010
Page 3 of 6
**NP23N06YDG**
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
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**----- Start of picture text -----**<br>
50<br>40<br>VGS = 10 V<br>5 V<br>30<br>20<br>10<br>Pulsed<br>0<br>0 0.5 1 1.5 2<br> VDS - Drain to Source Voltage - V<br> - Drain Current - A<br>D<br> I<br>**----- End of picture text -----**<br>
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
**==> picture [215 x 185] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.5<br>2<br>1.5<br>1<br>0.5<br>VDS = VGS<br>ID = 250 μ A<br>0<br>-100 0 100 200<br> Tch - Channel Temperature - ° C<br>- Gate to Source Threshold Voltage - V<br>GS(th)<br> V<br>**----- End of picture text -----**<br>
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
**==> picture [213 x 181] intentionally omitted <==**
**----- Start of picture text -----**<br>
50<br>Pulsed<br>45<br>40<br>35<br>30<br>V GS = 5 V<br>25<br>20 10 V<br>15<br>10<br>5<br>0<br>0.1 1 10 100<br> ID - Drain Current - A<br>Ω<br> - Drain to Source On-state Resistance - m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
## FORWARD TRANSFER CHARACTERISTICS
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**----- Start of picture text -----**<br>
100<br>TA = − 55 ° C<br>10 25 ° C<br>75 ° C<br>125 ° C<br>1 175 ° C<br>0.1<br>0.01<br>VDS = 10 V<br>Pulsed<br>0.001<br>1 2 3 4 5<br> VGS - Gate to Source Voltage - V<br>FORWARD TRANSFER ADMITTANCE vs. DRAIN<br>CURRENT<br>100<br>TA = − 55 ° C<br>25 ° C<br>75 ° C<br>125 ° C<br>10 175 ° C<br>VDS = 5 V<br>Pulsed<br>1<br>0.1 1 10 100<br>ID - Drain Current - A<br> - Drain Current - A<br>D<br> I<br> | - Forward Transfer Admittance - S<br>fs<br> | y<br>**----- End of picture text -----**<br>
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
**==> picture [217 x 182] intentionally omitted <==**
**----- Start of picture text -----**<br>
50<br>45<br>40<br>35<br>ID = 23 A<br>30 11.5 A<br>25 4.6 A<br>20<br>15<br>10<br>5<br>Pulsed<br>0<br>0 5 10 15 20<br> VGS - Gate to Source Voltage - V<br>Ω<br> - Drain to Source On-state Resistance - m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
R07DS0014EJ0100 Rev.1.00 Jul 01, 2010
Page 4 of 6
**NP23N06YDG**
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
**==> picture [212 x 181] intentionally omitted <==**
**----- Start of picture text -----**<br>
80<br>ID = 11.5 A<br>70 Pulsed<br>60<br>50<br>40<br>VGS = 5 V<br>30 10 V<br>20<br>10<br>0<br>-100 0 100 200<br> Tch - Channel Temperature - ° C<br>Ω<br> - Drain to Source On-state Resistance - m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
SWITCHING CHARACTERISTICS
**==> picture [215 x 406] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>VDD = 30 V<br>VGS = 10 V<br>RG = 0 Ω<br>100<br>td(off)<br>td(on)<br>10<br>tr<br>tf<br>1<br>0.1 1 10 100<br> ID - Drain Current - A<br> SOURCE TO DRAIN DIODE FORWARD VOLTAGE<br>100<br>10<br>VGS = 10 V 0 V<br>1<br>Pulsed<br>0.1<br>0 0.5 1 1.5<br>VF(S-D) - Source to Drain Voltage - V<br> - Switching Time - ns , tf<br>d(off)<br>, t, tr<br>d(on)<br> t<br> - Diode Forward Current - A<br>F<br> I<br>**----- End of picture text -----**<br>
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
**==> picture [217 x 161] intentionally omitted <==**
**----- Start of picture text -----**<br>
10000<br>VGS = 0 V<br>f = 1 MHz<br>1000<br>Ciss<br>Coss<br>100<br>Crss<br>10<br>0.1 1 10 100<br> - Capacitance - pF<br>rss<br>, C<br>oss<br>, C<br>iss<br> C<br>**----- End of picture text -----**<br>
**==> picture [140 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDS - Drain to Source Voltage - V<br>**----- End of picture text -----**<br>
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
**==> picture [217 x 399] intentionally omitted <==**
**----- Start of picture text -----**<br>
60 12<br>50 10<br>VDD = 48 V<br>30 V<br>40 12 V VGS 8<br>30 6<br>20 4<br>10 2<br>VDS<br>ID = 23 A<br>0 0<br>0 10 20 30<br> QG - Gate Charge - nC<br>REVERSE RECOVERY TIME vs.<br>DRAIN CURRENT<br>100<br>10<br>VGS = 0 V<br>di/dt = 100 A/ μ s<br>1<br>0.1 1 10 100<br> IF - Drain Current - A<br> - Drain to Source Voltage - V<br>DS<br> V<br> - Reverse Recovery Time - ns<br>rr<br> t<br>**----- End of picture text -----**<br>
R07DS0014EJ0100 Rev.1.00 Jul 01, 2010
Page 5 of 6
**NP23N06YDG**
## **Package Drawings (Unit: mm)**
## **8-pin HSON (Mass: 0.13 g TYP.)**
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**----- Start of picture text -----**<br>
1<br>8<br>2 7<br>3 6<br>4 5<br>6.0 ± 0.2 0.10 S<br>5.4 ± 0.2<br>0.73<br>0.4<br>1, 2, 3 : Source<br>4 : Gate<br>5, 6, 7, 8: Drain<br>3.18 ± 0.2<br>0.6 ± 0.15 0.8 ± 0.15<br>1.27<br>0.2 ± 0.2 ±<br>5.0 5.15<br>+0.1 0.05 −<br>0.42<br>0.10 M<br>+0.050 −<br>0 0.05<br>±<br>1.45 MAX.<br>0.42<br>0.2<br>±<br>3.8<br>**----- End of picture text -----**<br>
## **Equivalent Circuit**
**==> picture [103 x 88] intentionally omitted <==**
**----- Start of picture text -----**<br>
Drain<br>Body<br>Gate Diode<br>Source<br>**----- End of picture text -----**<br>
**Remark** Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0014EJ0100 Rev.1.00 Jul 01, 2010
Page 6 of 6
|**Revision History**|**Revision History**|**Revision History**||**NP23N06YDG**|
|---|---|---|---|---|
||||||
|**Rev.**|**Date**|||**Description**|
|||**Page **||**Summary**|
|1.00|Jul 01, 2010|−||First Eddition Issued|
||||||
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**==> picture [482 x 32] intentionally omitted <==**
© 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0
Updated at March 31, 2026
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