NMLU1210TWG

## NMLU1210 

## Full Bridge Rectifier 

Dual 20 V N−Channel with dual 3.2 A Schottky Barrier Diode, 4.0 x 4.0 x 0.5 mm Cool nM ™ Package 

## **Features** 

- Full−Bridge Rectifier Block 

- Up to 3.2 A operation 

- Low RDS(on) MOSFET to minimize conduction loss 

- Low gate charge MOSFET 

- Low VF Schottky diode 

- Ultra Low Inductance Package 

- This Device uses Halogen−Free Molding Compound 

- These are Pb−Free Devices 

## **Applications** 

## **http://onsemi.com** 

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||||
|---|---|---|
|MOSFET|
|V(BR)DSS|RDS(on) TYP|ID MAX|
|23 m|@ 4.5 V|
|20 V|3.2 A|
|17 m|@ 10 V|
|SCHOTTKY DIODE|
|VR MAX|VF TYP|IF MAX|
|20 V|0.45 V|3.2 A|

**----- End of picture text -----**<br>


- Wireless Charging 

- AC−DC Rectification 

- Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others 

## **RECTIFIER MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) 

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Value|Unit|
|oO|GND1|GND?|
|Input voltage between two MOSFET drain|VLL|20|V|
|RECTIFIER|
|Bridge Operating Junction and Storage|TJ, TSTG|−55 to|°|C|4.0 4.0 mm Cool Pin Connections|
|Temperature|125|(Top View)|
|Lead Temperature for Soldering Purposes|TL|260|°|C|MARKING DIAGRAM|
|(1/8” from case for 10 s)|
|Continuous Drain Current|TA = 25|°C|IO|2.2|A|UDFN|1210|
|R|_|JA (Note 1)|TA = 85|°C|1.16|Ç|CASE 517BS|AYWW|
|Power Dissipation R|_|JA (Note 1)|TTAA = 25 = 85|°°CC|PD|0.471.2|W|ÇÇ1210A|= Specific Device Code= Assembly Location|
|Continuous Drain Current|TA = 25|°C|IO|3.2|A|Y|= Year|
|R|_|JA t < 5 s (Note 1)|TA = 85|°C|1.88|WW|= Work Week= Pb−Free Package|
|Power Dissipation|TA = 25|°C|PD|2.34|W|(*Note: Microdot may be in either location)|
|R|_|JA t < 5 s (Note 1)|TA = 85|°C|0.94|PIN CONNECTIONS|
|Continuous Drain Current|TA = 25|°C|IO|1.16|A|Vout|Vout|Vout|
|R|_|JA (Note 2)|TA = 85|°C|0.6|L1_1|L|S|tet|i|d|L1_2|
|Power Dissipation|TA = 25|°C|PD|0.47|W|GND1GND1GND1|=a|ot|=|GND2GND2GND2|
|R|_|JA (Note 2)|TA = 85|°C|0.185|

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Vout Vout Vout<br>L1_1 L S tet i d L1_2<br>GND1GND1GND1 =a ot = GND2GND2GND2<br>(Top View)<br>L1_1 L1_2<br>**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **ORDERING INFORMATION** 

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|||||
|---|---|---|---|
|Device|Package|Shipping|[†]|
|UDFN|
|NMLU1210TWG|3000 / Tape & Reel|
|(Pb−Free)|

**----- End of picture text -----**<br>


1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 

2. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm[2] , 2 oz. Cu. 

- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **NMLU1210/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **August, 2013 − Rev. 1** 

**NMLU1210** 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Unit**|
|Junction−to−Ambient – Steady State (Note 3)|RθJA|82.5|°C/W|
|Junction−to−Ambient – t≤5 s (Note 3)|RθJA|42.5||
|Junction−to−Ambient – Steady State min Pad (Note 4)|RθJA|209||



3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 

4. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm[2] , 2 oz. Cu. 

**BRIDGE ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**ON CHARACTERISTICS**|||||||
|Rectifying Forward Voltage (Note 5)|Vfd2|Input voltage VLL=±5 V;<br>The output current of Rectifier Iout= 2 A||0.45|.56|V|
|Rectifier leakage current|Ileak|Input voltage VLL= 16 V;<br>No Load on the Rectifier output||31|1000|uA|
|Rectifier Reverse leakage current|Irleak|Input voltage VLL= 0 V;<br>The output voltage of the Rectifier<br>Vout= 5 V||21|1000|uA|



5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 

**MOSFET ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**Parameter**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**ON CHARACTERISTICS**||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.2||2.2|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/<br>TJ||||4||mV/°C|
|Drain−to−Source On Resistance<br>(Note 6)|RDS(on)|VGS= 10 V, ID=|3.2 A||17|26|m�|
|||VGS= 4.5 V, ID|= 3.2 A||23|32||
|Forward Transconductance|gFS|VDS = 10 V, ID|= 2.0 A||3.5||S|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage (Note 6)|VSD|VGS= 0 V, IS= 2.0 A|TJ= 25°C||0.79||V|
||||TJ= 125°C||0.65|||



6. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 

## **SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**SCHOTTKY DIODE ELECTRICAL**|**CHARACT**|**ERISTICS**(TJ= 25°C unless otherwise sp|ecified)||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|Maximum Instantaneous Forward<br>Voltage (Note 7)|VF|IF= 1.0 A||0.36||V|
|||IF= 2.0 A||0.41|||
|Maximum Instantaneous Reverse<br>Current|IR|VR=  20 V||0.04||mA|



7. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 

## **SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS** (TJ = 100 ° C unless otherwise specified) 

|**SCHOTTKY DIODE ELECTRICAL**|**CHARACT**|**ERISTICS**(TJ= 100°C unless otherwise s|pecified)||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|Maximum Instantaneous Forward<br>Voltage (Note 8)|VF|IF= 1.0 A||0.29||V|
|||IF= 2.0 A||0.36|||
|Maximum Instantaneous Reverse<br>Current|IR|VR=  20 V||4||mA|



8. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2% 

9. For detailed MOSFET and Diode parameters, please refer to the ON Semiconductor datasheets of NTTFS4930N and MBR230LSFT1G. The test on each individual die is limited to the system package. 

**http://onsemi.com** 

**2** 

**NMLU1210** 

**Figure 1. Typical Application Circuit** 

GND1 and GND2 are not internally connected. The user should make the connection in the PCB design. 

**http://onsemi.com 3** 

**NMLU1210** 

## **TYPICAL PERFORMANCE CURVES** 

(TJ = 25 ° C unless otherwise specified) 

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10 10<br>−55 ° C<br>125 ° C 25 ° C<br>1 125 ° C 1<br>25 ° C<br>−55 ° C<br>0.1 0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 2. Bridge Typical Forward Voltage Drop Figure 3. Bridge Maximum Forward Voltage<br>at Vin �  5 V Drop at Vin �  5 V<br>10k 1k<br>1k<br>100<br>Maximum<br>100 Maximum<br>10<br>10<br>Typical<br>1<br>1 Typical<br>0.1<br>0.1<br>0.01 0.01<br>25 35 45 55 65 75 85 95 105 115 125 25 35 45 55 65 75 85 95 105 115 125<br>TJ, TEMPERATURE JUNCTION ( ° C) TJ, TEMPERATURE JUNCTION ( ° C)<br>Figure 4. Output Leakage at 5 V Bias vs. Figure 5. Input Leakage at 16 V vs. Junction<br>Junction Temperature Temperature<br>700 40<br>600 T IDJ = 2 A  = 25 ° C TIJD = 25 = 2 A ° C<br>35<br>500<br>400 30<br>300<br>25<br>200<br>20<br>100<br>0 15<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10<br>VGS (V)<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>IF IF<br>, OUTPUT LEAKAGE (mA)<br>OUTPUT LEAKAGE (mA)<br>ILEAK<br>) � ) �<br> (m  (m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>


**Figure 6. FET Typical On−Resistance vs. Gate−to−Source Voltage ( from 3 V to 10 V)** 

**Figure 7. FET Typical On−Resistance vs. Gate−to−Source Voltage** 

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**4** 

**NMLU1210** 

## **TYPICAL PERFORMANCE CURVES** 

(TJ = 25 ° C unless otherwise specified) 

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10 100<br>125 ° C<br>10<br>1.0<br>1 125 ° C<br>0.1<br>25 ° C<br>25 ° C<br>−55 ° C 0.01<br>0.1 0.001<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 5 10 15 20 25<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 8. Schottky Typical Forward Current vs. Figure 9. Schottky Typical Reverse Current vs.<br>Forward Voltage Reverse Voltage<br>CURRENT (A)<br>CURRENT (mA)<br>, INSTANTANEOUS FORWARDIF , INSTANTANEOUS REVERSEIR<br>**----- End of picture text -----**<br>


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**5** 

**NMLU1210** 

## **PACKAGE DIMENSIONS** 

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UDFN8 4x4, 0.8P<br>CASE 517BS<br>ISSUE A<br>D A L NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>B L3 L3 ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. DIMENSION b APPLIES TO PLATED<br>TERMINAL AND IS MEASURED BETWEEN<br>REFERENCEPIN ONE ÉÉÉ mae, E L “oto DETAIL AL1 art oe 4. 0.15 AND 0.25MM FROM TERMINAL TIP.COPLANARITY APPLIES TO THE EXPOSEDPAD AS WELL AS THE TERMINALS.<br>a c 0.15 ot C ÉÉÉ ! |p CONSTRUCTIONSALTERNATE 5. POSITIONAL TOLERANCE APPLIES TO ALLOF THE EXPOSED PADS.<br>MILLIMETERS<br>0.15 C DIM MIN MAX<br>e lo TOP VIEW EXPOSED Cu MOLD CMPD - A3 A1A 0.450.00 0.550.05<br>A3 0.13 REF<br>DETAIL B A ÇÇÉÉ ÉÉÇÇ b 0.20 0.30<br>0.10 C D 4.00 BSC<br>0.08 C ÇÇÇÇ (A3) ÇÇ ÉÉ DETAIL B A1 ÇÇ D3D2E 0.902.104.00 BSC1.102.30<br>NOTE 4 SIDE VIEW A1 C SEATINGPLANE CONSTRUCTIONSALTERNATE E3E2 1.002.50 1.202.70<br>e 0.80 BSC<br>F 3.55 BSC<br>D3 e 0.10 on M C A B L1L 0.300.00 0.500.15<br>D2 NOTE 5 L3 0.13 0.23<br>DETAIL A F/2 RECOMMENDED<br>1 4 2X E3 0.10 M C A B SOLDERING FOOTPRINT*<br>4X<br>E2 NOTE 5 0.35 6X<br>2.34 0.60<br>fad ao +r<br>8 5 PACKAGE<br>8X b OUTLINE<br>e 0.10 M C A B 4.15 2.74<br>e/2<br>0.05 M C NOTE 3<br>& F | Seb<br>0.80 2X<br>BOTTOM VIEW 0.40 1 1.24<br>1.14 DETAIL C<br>3.69<br>2X 1.15<br>0.80 DIMENSIONS: MILLIMETERS<br>DETAIL C<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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## **LITERATURE FULFILLMENT** : 

**NMLU1210/D** 

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