NJVMJD45H11T4G

Bipolar (BJT) Single Transistor, PNP, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:90MHz; Power Dissipation Pd:20W; DC Collector Current:-8A; DC Current Gain hFE:40hFE; Tra
MSL: MSL 1 - Unlimited
SVHC: Lead (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 20W
Transistor Mounting: Surface Mount
Transistor Polarity: PNP
Transition Frequency: 90MHz
Transistor Case Style: TO-252 (DPAK)
DC Current Gain hFE Min: 40hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 8A
Collector Emitter Voltage Max: 80V

Delivery and price
Units per pack	1000
Price	0.332 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 14, 2026