NJD35N04T4G

Bipolar Transistor Array, Dual NPN, 350 V, 4 A, 45 W

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Manufacturer: ONSEMI
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:350V; Power Dissipation Pd:45W; DC Collector Current:4A; DC Current Gain hFE:300hFE; Transistor Case Style:TO-252;
MSL: MSL 1 - Unlimited
SVHC: Lead (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Dual NPN
Power Dissipation NPN: 45W
Power Dissipation PNP: -
Transistor Case Style: TO-252 (DPAK)
Transition Frequency NPN: 90MHz
Transition Frequency PNP: -
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 300hFE
DC Current Gain hFE Min PNP: -
Continuous Collector Current NPN: 4A
Continuous Collector Current PNP: -
Collector Emitter Voltage Max NPN: 350V
Collector Emitter Voltage Max PNP: -

Delivery and price
Units per pack	5000
Price	0.46 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 18, 2026