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NJD35N04T4G

Bipolar Transistor Array, Dual NPN, 350 V, 4 A, 45 W, 300 hFE, TO-252 (DPAK)

  • Manufacturer: ONSEMI
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • Power Dissipation NPN: 45W
  • Transition Frequency NPN: 90MHz
  • DC Current Gain hFE Min NPN: 300hFE
  • Continuous Collector Current NPN: 4A
  • Collector Emitter Voltage Max NPN: 350V
Delivery and price
Units per pack 500
Price 0.748 €
Current stock N/A
Lead time 30 days