Illustrative purposes only
NHDTA123JTR
Bipolar Pre-Biased / Digital Transistor, Single PNP, 80 V, 100 mA, 2.2 kohm, 47 kohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: NEXPERIA
- Product type: Pre-Biased / Digital Bipolar Transistors
- Product variants: No other variants available. No other names.
- No. of Pins: 3 Pin
- Product Range: NHDTA123JT Series
- Qualification: AEC-Q101
- Power Dissipation: 250mW
- RF Transistor Case: TO-236AB
- Transistor Mounting: Surface Mount
- Transistor Polarity: Single PNP
- Transistor Case Style: TO-236AB
- Base Input Resistor R1: 2.2kohm
- DC Current Gain hFE Min: 100hFE
- Resistor Ratio, R1 / R2: 0.04(Ratio)
- Base Emitter Resistor R2: 47kohm
- Operating Temperature Max: 150°C
- Digital Transistor Polarity: Single PNP
- Continuous Collector Current: 100mA
- Continuous Collector Current Ic: 100mA
- Collector Emitter Voltage Max PNP: 80V
- Collector Emitter Voltage V(br)ceo: 80V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.028 € |
| Current stock | 925 |
| Lead time | 7 days |
Datasheet
|
|---|