NFP36060L42T

## NFP36060L42T SPM 3 27 Series Intelligent Power Module (IPM) ; Bridgeless PFC, 600 V, 60 A 

The NFP36060L42T is an advanced PFC SPM 3 module providing a fully−featured, high−performance Bridgeless PFC (Power Factor Correction) input power stage for consumer, medical, and industrial applications. These modules integrate optimized gate drive of the built−in IGBTs to minimize EMI and losses, while also providing multiple on−module protection features including under−voltage lockout, short−circuit current protection, thermal monitoring, and fault reporting. These modules also feature high−performance output diodes and shunt resistor for additional space savings and mounting convenience. 

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## **Features** 

- UL Certified No. E209024 (UL1557) 

- 600 V – 60 A 2−Phase Bridgeless PFC with Integral Gate Drivers and Protection 

- Very Low Thermal Resistance using AlN DBC Substrate 

- Low−Loss Field Stop 4[th] Generation IGBT 

- Optimized for 20 kHz Switching Frequency 

- Built−in NTC Thermistor for Temperature Monitoring 

- Built−in Shunt Resistor for Current Sensing 

- Isolation Rating of 2500 Vrms / 1 min 

3D Package Drawing (Click to Activate 3D Content) 

**SPMHC−027 CASE MODFJ** 

- These Devices are RoHS Compliant 

## **Typical Applications** 

- 2−Phase Bridgeless PFC Converter (AC 200V Class) 

## **MARKING DIAGRAM** 

- ♦ HVAC (Commercial Air−conditioner) 

## **Integrated Power Functions** 

- 600 V – 60 A 2−Phase Bridgeless PFC for Single−phase AC / DC Power Conversion (refer to Figure 2) 

## **Integrated Drive, Protection, and System Control Functions** 

- For IGBTs: Gate−drive Circuit, Short−Circuit Protection (SCP) Control Circuit, Under−Voltage Lock−Out Protection (UVLO) 

- Fault Signaling: Corresponding to UV and SC faults 

- Built−in Thermistor: Temperature Monitoring 

- Input Interface: Active−HIGH Interface, works with 3.3 V / 5 V Logic, Schmitt−Trigger Input 

ON = ON Semiconductor Logo NFP36060L42T = Specific Device Code XXX = Lot Number Y = Year WW = Work Week 

## **Related Resources** 

- AN−9041 Bridgeless PFC SPM 3 Series Design Guide 

- • AN−9086 SPM 3 Package Mounting Guidance 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 7 of this data sheet. 

Publication Order Number: **NFP36060L42T/D** 

**1** 

© Semiconductor Components Industries, LLC, 2019 **November, 2019 − Rev. 1** 

**NFP36060L42T** 

## **PIN CONFIGURATION** 

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(1) VDD<br>(21) VAC−<br>(2) VSS<br>(3) N.C.<br>(4) IN(R) (22) NSENSE<br>(5) IN(S)<br>(6) VFO (23) NC<br>(7) CFOD<br>(8) CIN<br>(9) N.C. (24) N<br>(10) N.C.<br>Case Temperature (TC)<br>(11) N.C. Detecting Point<br>(12) N.C.<br>(13) N.C. (25) R<br>(14) N.C.<br>(15) N.C.<br>(16) N.C. (26) S<br>(17) N.C.<br>(18) N.C. DBC Substrate<br>(19) RTH<br>(20) VTH (27) PR<br>**----- End of picture text -----**<br>


**Figure 1. Pin Configuration − Top View** 

## **INTERNAL EQUIVALENT CIRCUIT AND INPUT/OUTPUT PINS** 

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(20) VTH<br>NTC<br>Thermistor (27) PR<br>(19) RTH D1 D2<br>(26) S<br>(8) CIN CIN<br>(25) R<br>(7) CFOD CFOD<br>(6) VFO VFO<br>OUT(S) Q1 D3 Q 2 D4<br>(5) IN(S) IN(S)<br>(24) N<br>(4) IN(R) IN(R)<br>(22) NSENSE<br>(2) VSS VSS Shunt<br>Resistor<br>(1) VDD VDD OUT(R) (21) VAC−<br>**----- End of picture text -----**<br>


**Figure 2. Internal Block Diagram** 

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**NFP36060L42T** 

**Table 1. PIN DESCRIPTION** 

|**Pin Number**|**Pin Name**|**Pin Description**|
|---|---|---|
|1|VDD|Common Supply Voltage of IC for IGBTs Driving|
|2|VSS|Common Supply Ground|
|4|IN(R)|Signal Input for Low−Side R−Phase IGBT|
|5|IN(S)|Signal Input for Low−Side S−Phase IGBT|
|6|VFO|Fault Output|
|7|CFOD|Capacitor for Fault Output Duration Selection|
|8|CIN|Capacitor (Low−Pass Filter) for Short−Circuit Current Detection|
|19|RTH|Series Resistor for The Use of Thermistor|
|20|VTH|Thermistor Bias Voltage|
|21|VAC−|Current Sensing Terminal|
|22|NSENSE|Current Sensing Reference Terminal|
|24|N|Negative Rail of DC−Link|
|25|R|Output for R−Phase|
|26|S|Output for S−Phase|
|27|PR|Positive Rail of DC−Link|
|3, 9~18, 23|N.C.|No Connection|



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**NFP36060L42T** 

**Table 2. ABSOLUTE MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**Table 2. AB**|**SOLUTE MAXIMUM RATINGS**(TJ=|25°C unless otherwise noted)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|**CONVERTER PART**|||||
|Vi|Input Supply Voltage|Applied between R − S|264|Vrms|
|Vi(Surge)|Input Supply Voltage (Surge)|Applied between R − S|500|V|
|VPN|Output Voltage|Applied between P − N|450|V|
|VPN(Surge)|Output Supply Voltage (Surge)|Applied between P − N|500|V|
|VCES|Collector-Emitter Voltage|Breakdown Voltage|600|V|
|VRRM|Repetitive Peak Reverse Voltage|Breakdown Voltage|600|V|
|IF|Diode Forward Current|Tc = 25°C, Tj≤150°C (Note 1)|60|A|
|IFSM|Peak Forward Surge Current|Non−Repetitive, 60 Hz Single Half−Sine Wave<br>(Note 1)|350|A|
|±Ic|Each IGBT Collector Current|VDD = 15 V, Tc = 25°C, Tj≤150°C (Note 1)|60|A|
|±Icp|Each IGBT Collector Current (Peak)|Tc = 25°C, Tj≤150°C, Under 1 ms Pulse Width<br>(Note 1)|90|A|
|Pc|Collector Dissipation|Tc = 25°C per IGBT (Note 1)|160|W|
|PRSH|Power Rating of Shunt Resistor|Tc < 125°C|2|W|
|Tj|Operating Junction Temperature||−40 ~ 150|�C|
|**CONTROL PART**|||||
|VDD|Control Supply Voltage|Applied between VDD − VSS|20|V|
|VIN|Input Signal Voltage|Applied between IN(X), IN(Y) − VSS|~0.3 ~ VDD + 0.3|V|
|VFO|Fault Output Supply Voltage|Applied between VFO − VSS|~0.3 ~ VDD + 0.3|V|
|IFO|Fault Output Current|Sink Current at VFO pin|2|mA|
|VCIN|Current Sensing Input Voltage|Applied between CIN − VSS|~0.3 ~ VDD + 0.3|V|
|Tj|Operating Junction Temperature||−40 ~ 150|�C|
|**TOTAL SYSTEM**|||||
|Tc|Module Case Operation Temperature|See Figure 1|−40 ~ 125|�C|
|Tstg|Storage Temperature||−40 ~ 125|�C|
|Viso|Isolation Voltage|60 Hz, Sinusoidal, AC 1 Minute, Connection Pins<br>to Heat Sink Plate|2500|Vrms|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These values had been made an acquisition by the calculation considered to design factor . 

**Table 3. THERMAL RESISTANCE** 

|**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|Rth(j−c)Q|Junction−to−Case Thermal<br>Resistance (Note 2)|Each IGBT under Operating Condition|−|−|0.78|�C/W|
|Rth(j−c)D||Each Boost Diode under Operating Condition|−|−|1.50|�C/W|
|Rth(j−c)R||Each Rectifier under Operating Condition|−|−|0.85|�C/W|



2. For the measurement point of case temperature (Tc), please refer to Figure 1. DBC discoloration and Picker Circle Printing allowed, please refer to application note AN−9190 (Impact of DBC Oxidation on SPM[®] Module Performance). 

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**NFP36060L42T** 

**Table 4. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified.) 

|**Table 4. EL**|**ECTRICAL CHARACTERISTI**|**CS**(TJ= 25°C unless otherwise specified.)|**CS**(TJ= 25°C unless otherwise specified.)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|**CONVERTER PART**||||||||
|VCE(sat)|Collector − Emitter<br>Saturation Voltage|VDD = 15 V, VIN = 5 V, Ic = 50 A, Tj = 25°C||−|1.55|2.05|V|
|VFH|High−Side Diode Forward Voltage|IFH = 50 A, Tj = 25°C||−|2.40|2.90|V|
|VFL|Low−Side Diode Forward Voltage|IFL = 50 A, Tj = 25°C||−|1.20|1.60|V|
|ton|Switching Characteristics|VPN = 400 V, VDD = 15 V, Ic = 60 A<br>Tj = 25°C<br>VIN = 0 V�5 V, Inductive Load<br>See Figure 3<br>(Note 3)||−|990|−|ns|
|tc(on)||||−|120|−|ns|
|toff||||−|930|−|ns|
|tc(off)||||−|190|−|ns|
|trr||||−|65|−|ns|
|Irr||||−|5|−|A|
|ICES|Collector − Emitter Leakage<br>Current|VCE = VCES||−|−|1|mA|
|IR|Boost Diode Revers Leakage<br>Current|VR = VRRM||−|−|1|mA|
|RSENSE|Collector Sensing Resistor|||1.83|2.00|2.17|m�|
|**CONTROL PART**||||||||
|IQDD|Quiescent VDD Supply Current|VDD = 15 V, IN(X), IN(Y) − VSS = 0 V,<br>Supply Current between VDD and VSS||−|−|5.00|mA|
|IPDD|Operating VDD Supply Current|VDD = 15 V, FPWM = 20 kHz, Duty = 50%,<br>Applied to one PWM Signal Input  per IGBT,<br>Supply Current between VDD and VSS||−|−|10.00|mA|
|VFOH|Fault Output Voltage|VDD = 15 V, VFO Circuit: 10 k�<br>to 5 V Pull−up|VCIN = 0 V|4.50|−|−|V|
|VFOL||VDD = 15 V, IFO = 1 mA|VCIN = 1 V|−|−|0.50|V|
|VCIN(ref)|Short Circuit Trip Level|VDD = 15 V|CIN − VSS|0.45|0.50|0.55|V|
|UVDDD|Supply Circuit Under−Voltage<br>Protection|Detection Level||9.8|−|13.3|V|
|UVDDR||Reset Level||10.3|−|13.8|V|
|VIN(ON)|ON Threshold Voltage|Applied between IN(X), IN(Y) − VSS||−|−|2.6|V|
|VIN(OFF)|OFF Threshold Voltage|||0.8|−|−|V|
|tFOD|Fault−Out Pulse Width|CFOD = 33 nF (Note 4)||25|−|−|ms|
|RTH|Resistance of Thermistor|at TTH = 25°C|See Figure 4<br>(Note 5)|−|50|−|k�|
|||at TTH = 85°C||−|5.76|−|k�|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. ton and toff include the propagation delay of the internal drive IC. tc(on) and tc(off) are the switching times of IGBT under the given gate−driving condition internally. For the detailed information, please see Figure 3. 

4. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 0.89 x 10−6 x tFOD [F] 

5. TTH is the temperature of thermistor itself. To know case temperature (Tc), conduct experiments considering the application. 

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**5** 

**NFP36060L42T** 

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100% Ic 100% Ic<br>trr<br>Vce Ic Ic Vce<br>VIN VIN<br>ton<br>toff<br>tc(on) tc(off)<br>10% Ic<br>’ v<br>VIN(ON) 90% Ic 10% Vce VIN(OFF) 10% Vce 10% Ic<br>(a) turn−on (b) turn−off<br>**----- End of picture text -----**<br>


**Figure 3. Switching Time Definition** 

**Figure 4. R−T Curve of Built−in Thermistor** 

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**NFP36060L42T** 

**Table 5. RECOMMENDED OPERATIONG CONDITIONS** 

|**Symbol**<br>~~ee~~<br>~~a~~<br>~~a~~|**Parameter**<br>~~ee~~<br>~~es~~|**Conditions**<br>~~ee~~<br>~~es~~|**Value**<br>~~eeee~~|**Value**<br>~~eeee~~|**Value**<br>~~eeee~~|**Unit**<br>~~ee~~<br>~~es~~|
|---|---|---|---|---|---|---|
||||**Min**<br>~~ee~~<br>~~es~~|**Typ**<br>~~ee~~<br>~~es~~|**Max**<br>~~eeee~~<br>~~es~~||
|Vi<br><br>~~a~~<br>~~a~~<br>~~a~~|Input Supply Voltage<br><br>~~es~~<br>~~es~~|Applied between R − S<br><br>~~es~~<br>~~Se~~|160<br><br>~~es~~<br>~~Gs~~|−<br><br>~~es~~<br>~~Gs~~|264<br>~~ee~~<br>~~es~~|Vrms<br>~~ee~~<br>~~es~~|
|VPN<br>~~a~~<br>~~a~~<br>~~a~~|Supply Voltage<br>~~es~~<br>~~es~~<br>~~es~~|Applied between P − N<br>~~es~~<br>~~Se~~<br>~~en~~|−<br>~~es~~<br>~~Gs~~<br>~~Gs~~|280<br>~~es~~<br>~~Gs~~|400<br>~~es~~|V<br>~~es~~|
|VDD<br>~~a~~<br>~~a~~<br>~~a~~|Control Supply Voltage<br>~~es~~<br>~~es~~<br>~~es er~~|Applied between VDD − VSS<br>~~Se~~<br>~~en~~<br>~~er~~|13.5<br>~~Gs~~<br>~~Gs~~<br>~~Gd~~|15.0<br>~~Gs~~<br>~~es~~|16.5<br>~~co~~|V<br>~~co~~|
|dVDD / dt<br>~~a~~<br>~~a~~<br>~~a~~|Control Supply Variation<br>~~es~~<br>~~es er~~<br>~~es~~|~~en~~<br>~~er~~<br>~~rs~~|−1<br>~~Gs~~<br>~~Gd~~<br>~~ss~~|−<br>~~es~~<br>~~ss~~|+1<br>~~co~~|V / s<br>~~co~~|
|FPWM<br>~~a~~<br>~~a~~|PWM Input Signal<br>~~es er~~<br>~~es~~<br>~~es~~|−40°C≤Tc≤125°C, −40°C≤Tj≤150°C<br>~~er~~<br>~~rs~~<br>~~Re~~|−<br>~~Gd ~~<br>~~ss~~|20<br> ~~es~~<br>~~ss~~<br>~~(~~|−<br>~~co~~|kHz<br>~~co~~|
|Tj<br>~~a~~|Junction Temperature<br>~~es~~<br>~~es~~|~~rs ~~<br>~~Re~~|−40<br> ~~ss~~|−<br>~~ss~~<br>~~(~~|150|°C|



Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 

## **PACKAGE MARKING AND ODERING INFORMATION** 

|**Device**|**Device Marking**|**Package**|**Shipping**|
|---|---|---|---|
|NFP36060L42T|NFP36060L42T|SPMHC-027|10 Units / Tube|



|~~es~~|||~~E~~<br>|~~E~~<br>|~~E~~<br>||
|---|---|---|---|---|---|---|
|**Parameter**<br>~~ef~~<br>~~es~~|**Conditions**<br>~~ef~~<br>||**Value**<br>~~ef~~<br>~~E~~<br>|||**Unit**<br>|
||||**Min**<br>~~ef~~<br>~~E~~<br>|**Typ**<br>~~ef~~<br>|**Max**<br>~~ef~~<br>||
|Device Flatness<br>~~es~~|See Figure 5<br>~~eG~~||0<br>~~E~~<br>~~eG~~|−<br>~~eG~~|+120<br>~~eG~~|m<br>~~eG~~|
|Mounting Torque<br>~~es~~<br>~~es~~|Mounting Screw: M3<br>See Figure 6 (Note 6, 7)<br><br>~~en~~|Recommended 0.62 N•m<br><br>~~en~~|0.51<br>~~E~~<br><br>~~(~~|0.62<br><br>~~(~~|0.72<br>|N•m<br>|
|Weight<br>~~es~~|~~en~~||−<br>~~(~~|15.00<br>~~(~~|−|g|



6. Do not over torque when mounting screws. Too much mounting torque may cause DBC cracks, as well as bolts and Al heat−sink destruction. 

7. Avoid one−sided tightening stress. Uneven mounting can cause the DBC substrate of package to be damaged. The pre−screwing torque is set to 20 ~ 30% of maximum torque rating. 

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Pre−Screwing:  1  →  2<br>Final Screwing: 2  →  1<br>2<br>**----- End of picture text -----**<br>


**Figure 5. Flatness Measurement Position** 

**Figure 6. Mounting Screws Torque Order** 

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**NFP36060L42T** 

## **TIME CHARTS OF SPMs PROTECTIVE FUNCTION** 

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Input Signal<br>Protection<br>RESET SET RESET<br>Circuit State<br>UVDDR<br>Control a1 UVDDD a6<br>a3<br>Supply Voltage<br>a2<br>a4 a7<br>Output Current<br>a5<br>Fault Output Signal<br>**----- End of picture text -----**<br>


a1: Control supply voltage rises: after the voltage rises UVDDR, the circuits start to operate when the next input is applied. a2: Normal operation: IGBT ON and carrying current. 

a3: Under−voltage detection (UVDDD). 

a4: IGBT OFF in spite of control input condition. 

a5: Fault output operation starts. 

a6: Under−voltage reset (UVDDR). 

a7: Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH. 

**Figure 7. Under−Voltage Protection** 

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Lower Arms<br>Control Input b6 b7<br>Protection<br>Circuit state SET RESET<br>Internal IGBT<br>b4<br>Gate−Emitter Voltage b3<br>b2<br>Internal delay<br>at protection circuit<br>SC current trip level<br>b8<br>b1<br>Output Current<br>SC reference voltage<br>Sensing Voltage<br>of Sense Resistor<br>RC filter circuit<br>Fault Output Signal c5 time constantdelay<br>**----- End of picture text -----**<br>


(With the external over current detection circuit) 

- b1: Normal operation: IGBT ON and carrying current. 

- b2: Short−Circuit current detection (SC trigger). 

b3: All IGBTs gate are hard interrupted. 

b4: All IGBTs turn OFF. 

b5: Fault output operation starts with a fixed pulse width. 

- b6: Input HIGH − IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON. 

- b7: Fault output operation finishes, but IGBT doesn’t turn ON until triggering next signal from LOW to HIGH. 

- b8: Normal operation: IGBT ON and carrying current. 

**Figure 8. Short−Circuit Current Protection** 

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**8** 

**NFP36060L42T** 

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**----- Start of picture text -----**<br>
Vac<br>PFCM<br>5V line<br>VTH<br>Temp . RTH ThermistorNTC<br>Monitoring<br>R4 15V line PR<br>VDD<br>VDD<br>C2 C4 VSS S<br>VSS<br>R<br>M Gating S IN(S) IN(S) 3−Phase<br>R1 IN(R) Inverter<br>Gating R IN(R)<br>C R1 5V line OUT(S)<br>C1 C1<br>R2 VFO<br>U Fault VFO N<br>C1 R1 C1<br>C5 CFOD CFOD OUT(R) ResistorShunt NSENSE<br>Current VAC−<br>Sensing CIN CIN<br>for R3<br>Control C3<br>**----- End of picture text -----**<br>


**Figure 9. Typical Application Circuit** 

8. To avoid malfunction, the wiring of each input should be as short as possible (Less than 2 − 3 cm). 

9. VFO output is an open−drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 2 mA. 

- 10.Input signal is active−HIGH type. There is a 5 k � resistor inside the IC to pull−down each input signal line to GND. RC coupling circuits should be adopted for the prevention of input signal oscillation. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board . R1C1 time constant should be selected in the range 50 ~ 150 ns (Recommended R1 = 100 � , C1 = 1 nF). 

11. To prevent error of the protection function, the wiring related with R3 and C3 should be as short as possible. 

- 12.In the short−circuit current protection circuit, select the R3C3 time constant in the range 3 .0 ~ 4.0 � s. Do enough evaluation on the real system because over−current protection time may vary wiring pattern layout and value of the R3C3 time constant. 

- 13.Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible. 

- 14.Relays are used in most systems of electrical equipment in industrial application. In these cases, there should be sufficient distance between the MCU and the relays. 

- 15.The zener diode or transient voltage suppressor should be adapted for the protection of ICs from the surge destruction between each pair of control supply terminals (Recommended zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 � ). 

- 16.Please choose the electrolytic capacitor with good temperature characteristic in C2. Choose 0.1 ~ 0.2 � F R−category ceramic capacitors with good temperature and frequency characteristics in C4. 

SPM is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE<br>CASE MODFJ<br>ISSUE O<br>**----- End of picture text -----**<br>


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DATE 31 JAN 2017<br>**----- End of picture text -----**<br>


## **DOCUMENT NUMBER:** 

**DESCRIPTION:** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **98AON13563G** 

## **SPMCA−027 / PDD STD, SPM27−CA, DBC TYPE PAGE 1 OF 1** 

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