NFAM5065L4BL

## **ON Semiconductor** 

## **Is Now** 

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**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## Intelligent Power Module (IPM), 650 V, 50 A 

## _Advance Information_ NFAM5065L4BL 

## **General Description** 

The NFAM5065L4BL is a fully-integrated inverter power module consisting of an independent High side gate driver, LVIC, six IGBT’s and a temperature sensor (VTS), suitable for driving permanent magnet synchronous (PMSM) motors, brushless DC (BLDC) motors and AC asynchronous motors. The IGBT’s are configured in a three-phase bridge with separate emitter connections for the lower legs for maximum flexibility in the choice of control algorithm. 

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The power stage has under voltage lockout protection (UVP). Internal boost diodes are provided for high side gate boost drive. 

## **Features** 

- Three-phase 650 V, 50 A IGBT Module with Independent Drivers 

- Active Logic Interface 

- Built-in Undervoltage Protection (UVP) 

- Integrated Bootstrap Diodes and Resistors 

- Separate Low-side IGBT Emitter Connections for Individual Current Sensing of Each Phase 

**DIP39, 54.5x31.0 EP−2 CASE MODGX** 

## **MARKING DIAGRAM** 

- Temperature Sensor (VTS) 

- UL1557 Certified (File No.339285) 

- This Device is Pb−Free and RoHS Compliant 

## **Typical Applications** 

NFAM5065L4BL ZZZATYWW 

- Industrial Drives 

- Industrial Pumps 

- Industrial Fans 

- Industrial Automation 

**==> picture [276 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
P U V W<br>VS(U)<br>VB(U) High Side HS1<br>VDD(UH) HVIC1<br>HIN(U)<br>VS(V)<br>VDD(VH)VB(V) High SideHVIC2 HS2 HS1 HS2 HS3<br>HIN(V)<br>VS(W)<br>VDD(WH)VB(W) Se High SideHVIC3 HS3 aha<br>HIN(W)<br>VTS LS1 LS2 LS3<br>LIN(U)<br>LIN(V) LS1<br>LIN(W) Low Side<br>VFO LVIC LS2<br>CFOD with<br>CIN Protection LS3<br>VSS<br>VDD(L)<br>NU NV NW<br>**----- End of picture text -----**<br>


Device marking is on package top side 

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**----- Start of picture text -----**<br>
NFAM5065L4BL = Specific Device Code<br>ZZZ = Assembly Lot Code<br>A = Assembly Location<br>T = Test Location<br>Y = Year<br>WW = Work Week<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|NFAM5065L4BL|DIP39<br>54.5 x 31.0<br>(Pb-Free)|90 / Box|



**Figure 1. Application Schematic** 

This document contains information on a new product. Specifications and information herein are subject to change without notice. 

Publication Order Number: **NFAM5065L4BL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2021 **March, 2021 − Rev. P0** 

**NFAM5065L4BL** 

## **APPLICATION SCHEMATIC** 

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**----- Start of picture text -----**<br>
VB(U) (3) N.C (38)<br>VS(U) (1) P (37)<br>CS + C1<br>HIN(U) (6) VB<br>HIN HOUT<br>VDD(UH) (4) VDD HVIC1<br>VSS VS U (36)<br>VB(V) (9)<br>VS(V) (7)<br>VB<br>HIN(V) (12) HIN HOUT<br>VDD(VH) (10) HVIC2<br>VDD<br>V (35)<br>VSS VS Motor<br>VB(W) (15)<br>VS(W) (13)<br>MCU VB<br>HIN(W) (18) HIN HOUT<br>VDD(WH) (16) HVIC3<br>VDD<br>W (34)<br>VSS VS<br>VTS (20) VTS<br>LIN(U) (21) OUT(U)<br>LIN(U)<br>LIN(V) (22) LIN(V) NU (33)<br>LIN(W) (23)<br>LIN(W)<br>5V line<br>LVIC<br>VFO (24) VFO OUT(V)<br>CFOD (25) CFOD NV (32)<br>CIN (26) CIN<br>15V line<br>VDD(L) (28) VDD<br>VSS (27) VSS OUT(W)<br>NW (31)<br>Signal for over current trip<br>Phase current<br>**----- End of picture text -----**<br>


**Figure 2. Application Schematic − Adjustable Option** 

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**2** 

**NFAM5065L4BL** 

## **BLOCK DIAGRAM** 

**==> picture [440 x 541] intentionally omitted <==**

**----- Start of picture text -----**<br>
N.C (38)<br>VS(U) (1)<br>P (37)<br>VB(U) (3)<br>VB<br>VDD(UH) (4) VDD HOUT<br>HVIC1<br>HIN(U) (6) HIN<br>VSS VS U (36)<br>VS(V) (7)<br>VB(V)(9)<br>VB<br>VDD(VH) (10) VDD HOUT<br>HVIC2<br>HIN(V) (12) HIN<br>VSS VS V (35)<br>VS(W) (13)<br>VB(W) (15)<br>VB<br>VDD(WH) (16) VDD HOUT<br>HVIC3<br>HIN(W) (18) HIN<br>VSS VS W (34)<br>VTS (20) VTS OUT(U)<br>LIN(U) (21) LIN(U)<br>NU (33)<br>LIN(V) (22) LIN(V)<br>LIN(W) (23) LIN(W)<br>VFO (24) VFO OUT(V)<br>LVIC<br>CFOD (25) CFOD<br>NV (32)<br>CIN (26) CIN<br>VSS (27) VSS<br>VDD(L) (28) VDD OUT(W)<br>NW (31)<br>**----- End of picture text -----**<br>


**Figure 3. Equivalent Block Diagram** 

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**3** 

**NFAM5065L4BL** 

## **PIN FUNCTION DESCRIPTION** 

|**Pin**|**Name**|**Description**|
|---|---|---|
|1|VS(U)|High−Side Bias Voltage GND for U phase IGBT Driving|
|(2)|−|Dummy|
|3|VB(U)|High−Side Bias Voltage for U phase IGBT Driving|
|4|VDD(UH)|High−Side Bias Voltage for U phase IC|
|(5)|−|Dummy|
|6|HIN(U)|Signal Input for High−Side U Phase|
|7|VS(V)|High−Side Bias Voltage GND for V phase IGBT Driving|
|(8)|−|Dummy|
|9|VB(V)|High−Side Bias Voltage for V phase IGBT Driving|
|10|VDD(VH)|High−Side Bias Voltage for V phase IC|
|(11)|−|Dummy|
|12|HIN(V)|Signal Input for High−Side V Phase|
|13|VS(W)|High−Side Bias Voltage GND for W phase IGBT Driving|
|(14)|−|Dummy|
|15|VB(W)|High−Side Bias Voltage for W phase IGBT Driving|
|16|VDD(WH)|High−Side Bias Voltage for W phase IC|
|(17)|−|Dummy|
|18|HIN(W)|Signal Input for High−Side W Phase|
|(19)|−|Dummy|
|20|VTS|Voltage Output for LVIC Temperature Sensing Unit|
|21|LIN(U)|Signal Input for Low−Side U Phase|
|22|LIN(V)|Signal Input for Low−Side V Phase|
|23|LIN(W)|Signal Input for Low−Side W Phase|
|24|VFO|Fault Output|
|25|CFOD|Capacitor for Fault Output Duration Selection|
|26|CIN|Input for Current Protection|
|27|VSS|Low−Side Common Supply Ground|
|28|VDD(L)|Low−Side Bias Voltage for IC and IGBTs Driving|
|(29)|−|Dummy|
|(30)|−|Dummy|
|31|NW|Negative DC−Link Input for U Phase|
|32|NV|Negative DC−Link Input for V Phase|
|33|NU|Negative DC−Link Input for W Phase|
|34|W|Output for U Phase|
|35|V|Output for V Phase|
|36|U|Output for W Phase|
|37|P|Positive DC−Link Input|
|38|N.C|No Connection|
|(39)|−|Dummy|



1. Pins of () are the dummy for internal connection. These pins should be no connection. 

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**4** 

**NFAM5065L4BL** 

## **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C) (Note 2) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C) (Note 2)||||
|---|---|---|---|---|
|**Symbol**|**Rating**|**Conditions**|**Value**|**Unit**|
|VPN|Supply Voltage|P−NU, NV, NW|450|V|
|VPN(surge)|Supply Voltage (Surge)|P−NU, NV, NW (Note 3)|550|V|
|VPN(PROT)|Self Protection Supply Voltage Limit<br>(Short−Circuit Protection Capability)|VDD = VBS = 13.5 V～16.5 V, TJ= 150°C,<br>VCES < 650 V, Non−Repetitive, < 2�s|400|V|
|Vces|Collector−emitter voltage||650|V|
|VRRM|Maximum Repetitive<br>Revers Voltage||650|V|
|±Ic|Each IGBT Collector Current||±30|A|
|Iop|Output current (peak)|PWM control|±50|A|
|±Icp|Each IGBT Collector<br>Current (Peak)|Under 1 ms Pulse Width|±100|A|
|VDD|Control Supply Voltage|VDD(UH,VH,WH), VDD(L)−VSS|−0.3 to 20|V|
|VBS|High−Side<br>Control Bias voltage|VB(U)−VS(U), VB(V)−VS(V),<br>VB(W)−VS(W)|−0.3 to 20|V|
|VIN|Input Signal Voltage|HIN(U), HIN(V), HIN(W), LIN(U), LIN(V),<br>LIN(W)–VSS|−0.3 to VDD|V|
|VFO|Fault Output Supply Voltage|VFO–VSS|−0.3 to VDD|V|
|IFO|Fault Output Current|Sink Current at VFO pin|2|mA|
|VCIN|Current Sensing<br>Input Voltage|CIN–VSS|−0.3 to VDD|V|
|Pc|Corrector Dissipation|Per One Chip|125|W|
|TJ|Operating Junction Temperature||−40 to +150|°C|
|Tstg|Storage temperature||−40 to +125|°C|
|Tc|Module Case Operation Temperature||−40 to +125|°C|
|VISO|Isolation voltage|60 Hz, Sinusoidal, AC 1 minute,<br>Connection<br>Pins to Heat Sink Plate|2500|Vrms|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 

3. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Rating**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|Rth(j-c)Q|Junction-to-Case Thermal<br>Resistance|Inverter IGBT Part (per 1/6 module)|−|−|1.0|°C/W|
|Rth(j-c)F||Inverter FWD Part (per 1/6 module)|−|−|1.7|°C/W|



4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 

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**5** 

**NFAM5065L4BL** 

## **RECOMMENDED OPERATING CONDITIONS** (Note 5) 

|**Symbol**|**Rating**|**Conditions**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|VPN|Supply Voltage|P−NU, NV, NW||−|300|400|V|
|VDD|Gate Driver Supply<br>Voltages|VDD(UH,VH,WH), VDD(L)−VSS||13.5|15|16.5|V|
|VBS||VB(U)−VS(U), VB(V)−VS(V),<br>VB(W)−VS(W)||13.0|15|18.5|V|
|dVDD / dt,<br>dVBS / dt|Supply Voltage Variation|||−1|−|1|V/�s|
|fPWM|PWM Frequency|||1|−|20|kHz|
|DT|Dead Time|Turn-off to Turn-on (external)||2.0|−|−|�s|
|Io|Allowable r.m.s. Current|VPN = 300 V,<br>VDD = 15 V,<br>P.F. = 0.8<br>Tc≤125°C,<br>Tj≤150°C<br>(Note 5)|fPWM= 5 kHz|−|−|29.2|Arms|
||||fPWM=  15 kHz|−|−|20.2||
|PWIN (on)|Allowable Input Pulse<br>Width|200 V≤VPN≤400 V<br>13.5 V≤VDD≤16.5 V<br>13.0 V≤VBS≤18.5 V<br>−20°C≤Tc≤100°C||1.0|−|−|�s|
|PWIN (off)||||1.5|−|−||
||Package Mounting Torque|M3 type screw||0.6|0.7|0.9|Nm|



Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 5. Allowable r.m.s current depends on the actual conditions. 

6. Flatness tolerance of the heatsink should be within −50 � m to +100 � m. 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C, VDD = 15 V, VBS = 15 V, unless otherwise specified.) (Note 7) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25|**CHARACTERISTICS**(TC= 25|°C, VDD = 15 V, VBS = 15 V, unless otherwise spe|cified.) (N|ote 7)|||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**INVERTERSECTION**||||||||
|Ices|Collector-Emitter Leakage<br>Current||Vce = Vces, TJ= 25°C|−|−|1|mA|
||||Vce = Vces, TJ= 150°C|−|−|10|mA|
|VCE(sat)|Collector-Emitter Saturation<br>Voltage||VDD = VBS = 15 V, IN = 5 V<br>Ic = 50 A, TJ= 25°C|−|1.65|2.30|V|
||||VDD = VBS = 15 V, IN = 5 V<br>Ic = 50 A, TJ= 150°C|−|1.85|−|V|
|VF|FWDi Forward Voltage||IN = 0 V, Ic = 50 A, TJ= 25°C|−|2.00|2.40|V|
||||IN = 0 V, Ic = 50 A, TJ= 150°C|−|2.00|−|V|
|ton|Switching Times|High Side|VPN = 300 V, VDD(H) = VDD(L) = 15 V<br>Ic = 50 A, TJ= 25°C, IN = 0⇔5 V<br>Inductive Load|1.05|1.65|2.25|�s|
|tc(on)||||−|0.40|0.90|�s|
|toff||||−|1.80|2.40|�s|
|tc(off)||||−|0.25|0.75|�s|
|trr||||−|0.25|−|�s|
|ton||Low Side|VPN = 300 V, VDD(H) = VDD(L) = 15 V<br>Ic = 50 A, TJ= 25°C, IN = 0⇔5 V<br>Inductive Load|1.25|1.85|2.45|�s|
|tc(on)||||−|0.50|1.00|�s|
|toff||||−|1.70|2.30|�s|
|tc(off)||||−|0.25|0.75|�s|
|trr||||−|0.25|−|�s|



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**6** 

## **NFAM5065L4BL** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C, VDD = 15 V, VBS = 15 V, unless otherwise specified.) (Note 7) (continued) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25|°C, VDD = 15 V, VBS = 15 V, unless otherwise spe|°C, VDD = 15 V, VBS = 15 V, unless otherwise spe|cified.) (N|ote 7) (co|ntinued)||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|**DRIVER SECTION**||||||||
|IQDDH|Quiescent VDD Supply<br>Current|VDD(UH,VH,WH) = 15 V,<br>HIN(U,V,W) = 0 V|VDD(UH)−VSS<br>VDD(VH)−VSS<br>VDD(WH)−VSS|−|−|0.30|mA|
|IQDDL||VDD(L) = 15 V,<br>LIN(U,V,W) = 0 V|VDD(L)−VSS|−|−|3.50|mA|
|IPDDH|Operating VCC Supply<br>Current|VDD(UH,VH,WH) = 15 V,<br>fPWM= 20 kHz, Duty = 50%,<br>Applied to one PWM Signal<br>Input for High-Side|VDD(UH)−VSS<br>VDD(VH)−VSS<br>VDD(WH)−VSS|−|−|0.40|mA|
|IPDDL||VDD(L) = 15 V,<br>fPWM= 20 kHz, Duty = 50%,<br>Applied to one PWM Signal<br>Input for Low-Side|VDD(L)−VSS|−|−|6.00|mA|
|IQBS|Quiescent VBS Supply<br>Current|VBS = 15 V,<br>HIN(U,V,W) = 0 V|VB(U)−VS(U)<br>VB(V)−VS(V)<br>VB(W)−VS(W)|−|−|0.30|mA|
|IPBS|Operating VBS Supply<br>Current|VDD = VBS = 15 V,<br>fPWM= 20 kHz, Duty = 50%,<br>Applied to one PWM Signal<br>Input for High-Side|VB(U)−VS(U)<br>VB(V)−VS(V)<br>VB(W)−VS(W)|−|−|5.00|mA|
|VIN(ON)|ON Threshold Voltage|HIN(U,V,W)−VSS, LIN(U,V,W)−VSS||−|−|2.6|V|
|VIN(OFF)|OFF Threshold Voltage|||0.8|−|−|V|
|VCIN(ref)|Short Circuit Trip Level|VDD = 15 V, CIN−VSS||0.46|0.48|0.50|V|
|UVDDD|Supply Circuit<br>Under-Voltage Protection|Detection Level||10.3|−|12.5|V|
|UVDDR||Reset Level||10.8|−|13.0|V|
|UVBSD||Detection Level||10.0|−|12.0|V|
|UVBSR||Reset Level||10.5|−|12.5|V|
|VTS|Voltage Output for LVIC<br>Temperature Sensing Unit|VTS−VSS = 10 nF, Temp. = 25°C||0.905|1.030|1.155|V|
|VFOH|Fault Output Voltage|VDD = 0 V, CIN = 0 V,<br>VFO Circuit: 10 k�to 5 V Pull-up||4.9|−|−|V|
|VFOL||VDD = 0 V, CIN = 1 V,<br>VFO Circuit: 10 k�to 5 V Pull-up||−|−|0.95|V|
|tFOD|Fault-Output Pulse Width|CFOD = 22 nF||1.6|2.4|−|ms|
|**BOOTSTRAP SECTION**||||||||
|VF|Bootstrap Diode Forward<br>Voltage|If = 0.1 A||3.4|4.6|5.8|V|
|RBOOT|Built-in Limiting Resistance|||30|38|46|�|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25 � C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 8. The fault−out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: tFOD = 0.1 × 10[6] × CFOD (s). 

9. Values based on design and/or characterization. 

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**7** 

**NFAM5065L4BL** 

## **Temperature of LVIC versus VTS Characteristics** 

**==> picture [361 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130<br>LVIC Temperature ( � C)<br>VTS Output Voltage (V)<br>**----- End of picture text -----**<br>


**Figure 4. Temperature of LVIC versus VTS Characteristics** 

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**8** 

**NFAM5065L4BL** 

## **PACKAGE DIMENSIONS** 

**DIP39, 54.5x31.0 EP−2** CASE MODGX ISSUE O 

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**9** 

**NFAM5065L4BL** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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