NFAM3065L4BT

## NFAM3065L4BT 

## _Advance Information_ Intelligent Power Module (IPM), 650 V, 30 A 

## **General Description** 

The NFAM3065L4B is a fully-integrated inverter power module consisting of an independent High side gate driver, LVIC, six IGBT’s and a temperature sensor (VTS or Thermistor (T)), suitable for driving permanent magnet synchronous (PMSM) motors, brushless DC (BLDC) motors and AC asynchronous motors. The IGBT’s are configured in a three-phase bridge with separate emitter connections for the lower legs for maximum flexibility in the choice of control algorithm. 

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The power stage has undervoltage lockout protection (UVP). Internal boost diodes are provided for high side gate boost drive. 

## **Features** 

- Three-phase 650 V, 30 A IGBT Module with Independent Drivers 

- Active Logic Interface 

- Built-in Undervoltage Protection (UVP) 

- Integrated Bootstrap Diodes and Resistors 

- Separate Low-side IGBT Emitter Connections for Individual Current Sensing of Each Phase 

## **DIP39 54.5 x 31.0 CASE MODGC** 

## **MARKING DIAGRAM** 

- Temperature Sensor (VTS or Thermistor (T)) 

- UL: E339285 

- This is a Pb-Free Device 

## **Typical Applications** 

- Industrial Drives 

- Industrial Pumps 

- Industrial Fans 

- Industrial Automation 

Device marking is on package top side 

NFAM3065L4BT = Specific Device Code ZZZ = Assembly Input Ordering Code AT = Assembly Site= Test Site T = Test Site Y = Year Code WW = Work Week 

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RTH VTH P U V W<br>ZZZ  = Assembly Input Ordering Code<br>VDD(UH)VS(U)VB(U) High SideHVIC1 HS1 AT  = Assembly Site= Test Site<br>HIN(U) Y  = Year Code<br>VDD(VH)VS(V)VB(V) High SideHVIC2 HS2 HS1 HS2 HS3 WW  = Work Week<br>HIN(V)<br>VDD(WH)VS(W)VB(W) am High SideHVIC3 e HS3 anaes ORDERING INFORMATION<br>HIN(W)<br>VTS LS1 LS2 LS3 Device Package Shipping<br>LIN(U)<br>LIN(V) Low Side LS1 NFAM3065L4BT DIP39  90 / Box<br>LIN(W)CFODVFOCIN ProtectionLVICwith LS2LS3 54.5 x 31.0(Pb-Free)<br>VSS<br>VDD(L) a 4 4 4 | SSE<br>NU NV NW<br>**----- End of picture text -----**<br>


**Figure 1. Application Schematic** 

This document contains information on a new product. Specifications and information herein are subject to change without notice. 

Publication Order Number: **NFAM3065L4BT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2019 **April, 2019 − Rev. P1** 

**NFAM3065L4BT** 

## **APPLICATION SCHEMATIC** 

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5V line<br>RTH (39)<br>* NTC Thermistor<br>VB(U) (3) VTH (38)<br>VS(U) (1) P (37)<br>CS + C1<br>VB<br>HIN(U) (6) HIN HOUT<br>VDD(UH) (4) VDD HVIC1<br>U (36)<br>VSS VS<br>VB(V) (9)<br>VS(V) (7)<br>VB<br>HIN(V) (12) HIN HOUT<br>VDD(VH) (10) VDD HVIC2<br>V (35)<br>VSS VS Motor<br>VB(W) (15)<br>VS(W) (13)<br>MCU VB<br>HIN(W) (18) HIN HOUT<br>VDD(WH) (16) VDD HVIC3<br>W (34)<br>VSS VS<br>VTS (20) VTS<br>LIN(U) (21) LIN(U) OUT(U)<br>LIN(V) (22) LIN(V) NU (33)<br>LIN(W) (23)<br>LIN(W)<br>5V line<br>LVIC<br>VFO (24) VFO OUT(V)<br>CFOD (25) CFOD NV (32)<br>CIN (26) CIN<br>15V line<br>VDD(L) (28) VDD<br>VSS (27) VSS OUT(W)<br>NW (31)<br>Signal for over current trip<br>Phase current<br>**----- End of picture text -----**<br>


**Figure 2. Application Schematic − Adjustable Option** 

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**2** 

**NFAM3065L4BT** 

## **BLOCK DIAGRAM** 

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RTH (39)<br>* NTC Thermistor<br>VTH (38)<br>VS(U) (1)<br>P (37)<br>VB(U) (3)<br>VB<br>VDD(UH) (4) VDD HOUT<br>HVIC1<br>HIN(U) (6) HIN<br>VSS VS U (36)<br>VS(V) (7)<br>VB(V)(9)<br>VB<br>VDD(VH) (10) VDD HOUT<br>HVIC2<br>HIN(V) (12) HIN<br>VSS VS V (35)<br>VS(W) (13)<br>VB(W) (15)<br>VB<br>VDD(WH) (16) VDD HOUT<br>HVIC3<br>HIN(W) (18) HIN<br>VSS VS W (34)<br>VTS (20) VTS OUT(U)<br>LIN(U) (21) LIN(U)<br>NU (33)<br>LIN(V) (22) LIN(V)<br>LIN(W) (23) LIN(W)<br>VFO (24) VFO OUT(V)<br>LVIC<br>CFOD (25) CFOD<br>NV (32)<br>CIN (26) CIN<br>VSS (27) VSS<br>VDD(L) (28) VDD OUT(W)<br>NW (31)<br>**----- End of picture text -----**<br>


**Figure 3. Equivalent Block Diagram** 

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**3** 

**NFAM3065L4BT** 

## **PIN FUNCTION DESCRIPTION** 

|**Pin**|**Name**|**Description**|
|---|---|---|
|1|VS(U)|High-Side Bias Voltage GND for U phase IGBT Driving|
|(2)|−|Dummy|
|3|VB(U)|High-Side Bias Voltage for U phase IGBT Driving|
|4|VDD(UH)|High-Side Bias Voltage for U phase IC|
|(5)|−|Dummy|
|6|HIN(U)|Signal Input for High-Side U Phase|
|7|VS(V)|High-Side Bias Voltage GND for V phase IGBT Driving|
|(8)|−|Dummy|
|9|VB(V)|High-Side Bias Voltage for V phase IGBT Driving|
|10|VDD(VH)|High-Side Bias Voltage for V phase IC|
|(11)|−|Dummy|
|12|HIN(V)|Signal Input for High-Side V Phase|
|13|VS(W)|High-Side Bias Voltage GND for W phase IGBT Driving|
|(14)|−|Dummy|
|15|VB(W)|High-Side Bias Voltage for W phase IGBT Driving|
|16|VDD(WH)|High-Side Bias Voltage for W phase IC|
|(17)|−|Dummy|
|18|HIN(W)|Signal Input for High-Side W Phase|
|(19)|−|Dummy|
|20|VTS|Voltage Output for LVIC Temperature Sensing Unit|
|21|LIN(U)|Signal Input for Low-Side U Phase|
|22|LIN(V)|Signal Input for Low-Side V Phase|
|23|LIN(W)|Signal Input for Low-Side W Phase|
|24|VFO|Fault Output|
|25|CFOD|Capacitor for Fault Output Duration Selection|
|26|CIN|Input for Current Protection|
|27|VSS|Low-Side Common Supply Ground|
|28|VDD(L)|Low-Side Bias Voltage for IC and IGBTs Driving|
|(29)|−|Dummy|
|(30)|−|Dummy|
|31|NW|Negative DC-Link Input for U Phase|
|32|NV|Negative DC-Link Input for V Phase|
|33|NU|Negative DC-Link Input for W Phase|
|34|W|Output for U Phase|
|35|V|Output for V Phase|
|36|U|Output for W Phase|
|37|P|Positive DC-Link Input|
|38|VTH|Thermistor Bias Voltage (T) / Not connection|
|39|RTH|Series Resister for Thermistor (Temperature Detection) *optional for T|



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**4** 

**NFAM3065L4BT** 

## **ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C) (Note 1) 

|**ABSOLUTE M**|**AXIMUM RATINGS**(TC= 25°C) (Note|1)|||
|---|---|---|---|---|
|**Symbol**|**Rating**|**Conditions**|**Value**|**Unit**|
|VPN|Supply Voltage|P−NU, NV, NW|450|V|
|VPN(surge)|Supply Voltage (Surge)|P−NU, NV, NW (Note 2)|500|V|
|VPN(PROT)|Self Protection Supply Voltage Limit<br>(Short-Circuit Protection Capability)|VDD = VBS = 13.5 V to 16.5 V,<br>Tj = 150°C, VCES < 650 V,<br>Non-Repetitive, < 2�s|400|V|
|Vces|Collector-emitter Voltage||650|V|
|VRRM|Maximum Repetitive Revers Voltage||650|V|
|±Ic|Each IGBT Collector Current||±30|A|
|±Icp|Each IGBT Collector Current (Peak)|Under 1ms Pulse Width|±60|A|
|VDD|Control Supply Voltage|VDD(H), VDD(L)−VSS|−0.3 to 20|V|
|VBS|High-Side Control Bias voltage|VB(U)−VS(U), VB(V)−VS(V),<br>VB(W)−VS(W)|−0.3 to 20|V|
|VIN|Input Signal Voltage|HIN(U), HIN(V), HIN(W), LIN(U), LIN(V),<br>LIN(W)–VSS|−0.3 to VDD|V|
|VFO|Fault Output Supply Voltage|VFO–VSS|−0.3 to VDD|V|
|IFO|Fault Output Current|Sink Current at VFO pin|2|mA|
|VCIN|Current Sensing Input Voltage|CIN–VSS|−0.3 to VDD|V|
|Pc|Corrector Dissipation|Per One Chip|113|W|
|Tj|Operating Junction Temperature||−40 to +150|°C|
|Tstg|Storage Temperature||−40 to +125|°C|
|Tc|Module Case Operation<br>Temperature||−40 to +125|°C|
|Viso|Isolation Voltage|60 Hz, Sinusoidal, AC 1 minute,<br>Connection Pins to Heat Sink Plate|2500|V rms|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 

2. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Rating**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|Rth(j-c)Q|Junction-to-Case Thermal<br>Resistance|Inverter IGBT Part (per 1/6 module)|−|−|1.1|°C/W|
|Rth(j-c)F||Inverter FWD Part (per 1/6 module)|−|−|2.2|°C/W|



3. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 

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**5** 

**NFAM3065L4BT** 

## **RECOMMENDED OPERATING CONDITIONS** 

|**Symbol**|**Rating**|**Conditions**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|VPN|Supply Voltage|P to NU, NV, NW||0|−|400|V|
|VDD|Gate Driver Supply<br>Voltages|VDD(HU,HV,HW), VDD(L) to VSS||13.5|15|16.5|V|
|VBS||VB(U) to VS(U), VB(V) to VS(V),<br>VB(W) to VS(W)||13.0|15|18.5|V|
|dVDD / dt,<br>dVBS / dt|Supply Voltage Variation|||−1|−|1|V/�s|
|fPWM|PWM Frequency|||1|−|20|kHz|
|DT|Dead Time|Turn-off to Turn-on (external)||1.5|−|−|�s|
|Io|Allowable r.m.s. Current|VCC = 300 V,<br>VD = 15 V,<br>P.F. = 0.8<br>Tc≤100°C,<br>Tj≤150°C<br>(Note 5)|fPWM= 5 kHz|−|25.7|−|A rms|
||||fPWM=  15 kHz|−|18.8|−||
|PWIN (on)|Allowable Input Pulse<br>Width|VCC = 450 V, VD = 18.5 V<br>Ic = 30 A, Tc = 100°C||0.7|−|−|�s|
|PWIN (off)||||1.5|−|−||
||Package Mounting Torque|M3 type screw||0.6|0.7|0.9|Nm|



Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 

4. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 

5. Allowable r.m.s current depends on the actual conditions. 

6. Flatness tolerance of the heatsink should be within −50 � m to +100 � m. 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C, VD = 15 V, VDB = 15 V, unless otherwise specified.) (Note 7) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25|**CHARACTERISTICS**(TC= 25|°C, VD = 15 V, VDB = 15 V, unless otherwise specif|ied.) (Not|e 7)|||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**INVERTER SECTION**||||||||
|Ices|Collector-Emitter Leakage<br>Current||Vce = Vces, Tj = 25°C|−|−|1|mA|
||||Vce = Vces, Tj = 150°C|−|−|10|mA|
|VCE(sat)|Collector-Emitter Saturation<br>Voltage||VDD = VBS = 15 V, IN = 5 V<br>Ic = 30 A, Tj = 25°C|−|1.60|2.30|V|
||||VDD = VBS = 15 V, IN = 5 V<br>Ic = 30 A, Tj = 150°C|−|1.80|−|V|
|VF|FWDi Forward Voltage||IN = 0 V, Ic = 30 A, Tj = 25°C|−|2.00|2.40|V|
||||IN = 0 V, Ic = 30 A, Tj = 150°C|−|2.00|−|V|
|ton|Switching Times|High Side|VPN = 300 V, VDD(H) = VDD(L) = 15 V<br>Ic = 30 A, Tj = 25°C, IN = 0⇔5 V<br>Inductive Load|0.80|1.25|1.85|�s|
|tc(on)||||−|0.25|0.65|�s|
|toff||||−|1.60|2.20|�s|
|tc(off)||||−|0.25|0.75|�s|
|trr||||−|0.15|−|�s|
|ton||Low Side|VPN = 300 V, VDD(H) = VDD(L) = 15 V<br>Ic = 30 A, Tj = 25°C, IN = 0⇔5 V<br>Inductive Load|0.80|1.40|2.00|�s|
|tc(on)||||−|0.25|0.55|�s|
|toff||||−|1.60|2.20|�s|
|tc(off)||||−|0.25|0.75|�s|
|trr||||−|0.10|−|�s|



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**6** 

## **NFAM3065L4BT** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C, VD = 15 V, VDB = 15 V, unless otherwise specified.) (Note 7) (continued) 

|**ELECTRICAL**|**CHARACTERISTICS**(TC= 25|°C, VD = 15 V, VDB = 15 V, unless otherwise specif|°C, VD = 15 V, VDB = 15 V, unless otherwise specif|ied.) (Not|e 7) (cont|inued)||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|**DRIVER SECTION**||||||||
|IQDDH|Quiescent VDD Supply<br>Current|VDD(UH,VH,WH) = 15 V,<br>HIN(U,V,W) = 0 V|VDD(UH)−VSS<br>VDD(VH)−VSS<br>VDD(WH)−VSS|−|−|0.30|mA|
|IQDDL||VDD(L) = 15 V,<br>LIN(U,V,W) = 0 V|VDD(L)−VSS|−|−|3.50|mA|
|IPDDH|Operating VCC Supply<br>Current|VDD(UH,VH,WH) = 15 V,<br>fPWM= 20 kHz, Duty = 50%,<br>Applied to one PWM Signal<br>Input for High-Side|VDD(UH)−VSS<br>VDD(VH)−VSS<br>VDD(WH)−VSS|−|−|0.40|mA|
|IPDDL||VDD(L) = 15 V,<br>fPWM= 20 kHz, Duty = 50%,<br>Applied to one PWM Signal<br>Input for Low-Side|VDD(L)−VSS|−|−|6.00|mA|
|IQBS|Quiescent VBS Supply<br>Current|VBS = 15 V,<br>HIN(U,V,W) = 0 V|VB(U)−VS(U)<br>VB(V)−VS(V)<br>VB(W)−VS(W)|−|−|0.30|mA|
|IPBS|Operating VBS Supply<br>Current|VDD = VBS = 15 V,<br>fPWM= 20 kHz, Duty = 50%,<br>Applied to one PWM Signal<br>Input for High-Side|VB(U)−VS(U)<br>VB(V)−VS(V)<br>VB(W)−VS(W)|−|−|5.00|mA|
|VIN(ON)|ON Threshold Voltage|HIN(U,V,W)−VSS, LIN(U,V,W)−VSS||−|−|2.6|V|
|VIN(OFF)|OFF Threshold Voltage|||0.8|−|−|V|
|VCS(ref)|Short Circuit Trip Level|VDD = 15 V, CIN−VSS||0.45|0.48|0.51|V|
|UVDDD|Supply Circuit<br>Under-Voltage Protection|Detection Level||10.3|−|12.5|V|
|UVDDR||Reset Level||10.8|−|13.0|V|
|UVBSD||Detection Level||10.0|−|12.0|V|
|UVBSR||Reset Level||10.5|−|12.5|V|
|VTS|Voltage Output for LVIC<br>Temperature Sensing Unit|VTS−VSS = 10 nF, Temp. = 25°C||(0.905)|(1.030)|(1.155)|V|
|VFOH|Fault Output Voltage|VDD = 0 V, CIN = 0 V,<br>VFO Circuit: 10 k�to 5 V Pull-up||4.9|−|−|V|
|VFOL||VDD = 0 V, CIN = 1 V,<br>VFO Circuit: 10 k�to 5 V Pull-up||−|−|0.95|V|
|tFOD|Fault-Output Pulse Width|CFOD = 22 nF||1.6|2.4|−|ms|
|**BOOTSTRAP SECTION**||||||||
|VF|Bootstrap Diode Forward<br>Current|If = 0.1 A||3.4|4.6|5.8|V|
|RBOOT|Built-in Limiting Resistance|||30|38|46|�|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25 � C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 8. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: tFOD = (TBD) × 106 × CFOD (s). 

9. Values based on design and/or characterization. 

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**7** 

**NFAM3065L4BT** 

## **Temperature of LVIC versus VTS Characteristics** 

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**----- Start of picture text -----**<br>
4,0<br>3,5<br>3,0<br>2,5<br>2,0<br>1,5<br>1,0<br>40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130<br>LVIC Temperature ( � C)<br>VTS Output Voltage (V)<br>**----- End of picture text -----**<br>


**Figure 4. Temperature of LVIC versus VTS Characteristics** 

**Table 1. THERMISTOR CHARACTERISTICS (INCLUDED ONLY IN NFAM3060L4BT)** 

|**Parameter**|**Symbol**|**Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|Resistance|R25|Tc = 25°C|46.530|47|47.47|k�|
|Resistance|R125|Tc = 100°C|1.344|1.406|1.471|k�|
|B-Constant (25−50°C)|−|B|4009.5|4050|4090.5|K|
|Temperature range|−|−|−40|−|+125|°C|



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10000<br>1000<br>min<br>typ<br>100 max<br>10<br>1<br>−40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>LVIC Temperature ( � C)<br>VTS Output Voltage (V)<br>**----- End of picture text -----**<br>


**Figure 5. Thermistor Resistance versus Case Temperature** 

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**8** 

**NFAM3065L4BT** 

## **PACKAGE DIMENSIONS** 

**MINI DIP39, 31.0x54.5** CASE MODGC ISSUE A 

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**9** 

**NFAM3065L4BT** 

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