Image not available
Illustrative purposes only
NCV8402ADDR2G
Power MOSFET, N Channel, SOIC
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:42V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.62W
- Power Dissipation P Channel: 1.62W
- Drain Source Voltage Vds N Channel: 42V
- Drain Source Voltage Vds P Channel: 42V
- Continuous Drain Current Id N Channel: 2A
- Continuous Drain Current Id P Channel: 2A
- Drain Source On State Resistance N Channel: 0.165ohm
- Drain Source On State Resistance P Channel: 0.165ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.554 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## NCV8402D, NCV8402AD ## Dual Self-Protected Low-Side Driver with Temperature and Current Limit NCV8402D/AD is a dual protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. ## **Features** - Short−Circuit Protection - Thermal Shutdown with Automatic Restart - Overvoltage Protection - Integrated Clamp for Inductive Switching - ESD Protection - dV/dt Robustness - Analog Drive Capability (Logic Level Input) - NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Typical Applications** - Switch a Variety of Resistive, Inductive and Capacitive Loads - Can Replace Electromechanical Relays and Discrete Circuits - Automotive / Industrial ## **www.onsemi.com** **==> picture [190 x 58] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br>(Clamped) RDS(ON) TYP ID MAX<br>42 V 165 m @ 10 V 2.0 A*<br>1<br>*Max current limit value is dependent on input<br>condition.<br>**----- End of picture text -----**<br> **==> picture [171 x 149] intentionally omitted <==** **----- Start of picture text -----**<br> Drain<br>Overvoltage<br>Gate Protection<br>Input<br>ESD Protection<br>Temperature Current Current<br>Limit Limit Sense<br>Source<br>**----- End of picture text -----**<br> **==> picture [174 x 126] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING DIAGRAM<br>8<br>SO−8 xxxxxx<br>8 CASE 751 ALYW<br>1 STYLE 11<br>1 Le<br>xxxxxx = V8402D or 8402AD<br>A = Assembly Location<br>L = Wafer Lot<br>Y = Year<br>W = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br> ## **PIN ASSIGNMENT** **==> picture [115 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> 1 8<br>Source 1 Drain 1<br>Gate 1 Drain 1<br>Source 2 Drain 2<br>Gate 2 i z : Drain 2<br>**----- End of picture text -----**<br> **ORDERING INFORMATION** **Device Package Shipping**[†] NCV8402DDR2G SOIC−8 2500/Tape & Reel NCV8402ADDR2G (Pb−Free) ~~—~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **NCV8402D/D** **1** © Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 3** **NCV8402D, NCV8402AD** ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Drain−to−Source Voltage Internally Clamped|VDSS|42|V| |Drain−to−Gate Voltage Internally Clamped<br>(RG= 1.0 M�)|VDGR|42|V| |Gate−to−Source Voltage|VGS|�14|V| |Continuous Drain Current|ID|Internally Limited|| |Power Dissipation<br>@ TA= 25°C (Note 1)<br>@ TA= 25°C (Note 2)|PD|0.8<br>1.62|W| |Maximum Continuous Drain Current<br>@ TA= 25°C (Note 1)<br>@ TA= 25°C (Note 2)|ID|2.02<br>2.88|A| |Thermal Resistance<br>Junction−to−Ambient Steady State (Note 1)<br>Junction−to−Ambient Steady State (Note 2)|R�JA<br>R�JA|157<br>77|°C/W| |Single Pulse Drain−to−Source Avalanche Energy<br>(VDD= 32 V, VG= 5.0 V, IPK= 1.0 A, L = 300 mH, RG(ext)= 25�)|EAS|150|mJ| |Load Dump Voltage<br>(VGS= 0 and 10 V, RI= 2.0�, RL= 9.0�, td= 400 ms)|VLD|55|V| |Operating Junction and Storage Temperature|TJ, Tstg|−55 to 150|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted onto min pad FR4 PCB, (Cu area = 40 sq. mm, 1 oz.). 2. Surface−mounted onto 1 ″ sq. FR4 board (Cu area = 625 sq. mm, 2 oz.). **==> picture [289 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> +<br>ID<br>DRAIN<br>IG<br>VDS<br>+ GATE<br>SOURCE<br>VGS<br>− −<br>**----- End of picture text -----**<br> **Figure 1. Voltage and Current Convention** **www.onsemi.com** **2** ## **NCV8402D, NCV8402AD** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**Parameter**|**Test Condition**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**||||||| |Drain−to−Source Breakdown Voltage<br>(Note 3)|VGS= 0 V, ID= 10 mA, TJ= 25°C|V(BR)DSS|42|46|55|V| ||VGS= 0 V, ID= 10 mA, TJ= 150°C<br>(Note 5)||40|45|55|| |Zero Gate Voltage Drain Current|VGS= 0 V, VDS= 32 V, TJ= 25°C|IDSS||0.25|4.0|�A| ||VGS= 0 V, VDS= 32 V, TJ= 150°C<br>(Note 5)|||1.1|20|| |Gate Input Current|VDS= 0 V, VGS= 5.0 V|IGSSF||50|100|�A| |**ON CHARACTERISTICS**(Note 3)||||||| |Gate Threshold Voltage|VGS= VDS, ID= 150�A|VGS(th)|1.3|1.8|2.2|V| |Gate Threshold Temperature Coefficient||VGS(th)/TJ||4.0|6.0|−mV/°C| |Static Drain−to−Source On−Resistance|VGS= 10 V, ID= 1.7 A, TJ= 25°C|RDS(on)||165|200|m�| ||VGS= 10 V, ID= 1.7 A, TJ= 150°C<br>(Note 5)|||305|400|| ||VGS= 5.0 V, ID= 1.7 A, TJ= 25°C|||195|230|| ||VGS= 5.0 V, ID= 1.7 A, TJ= 150°C<br>(Note 5)|||360|460|| ||VGS= 5.0 V, ID= 0.5 A, TJ= 25°C|||190|230|| ||VGS= 5.0 V, ID= 0.5 A, TJ= 150°C<br>(Note 5)|||350|460|| |Source−Drain Forward On Voltage|VGS= 0 V, IS= 7.0 A|VSD||1.0||V| |**SWITCHING CHARACTERISTICS**(Note 5)||||||| |Turn−On Delay Time (10% VINto 90% ID)|VGS= 10 V, VDD= 12 V,<br>ID= 2.5 A, RL= 4.7�|td(on)||25|30|�s| |Turn−On Rise Time (10% IDto 90% ID)||trise||120|200|�s| |Turn−Off Delay Time (90% VINto 10% ID)||td(off)||20|25|�s| |Turn−Off Fall Time (90% IDto 10% ID)||tfall||50|70|�s| |Slew−Rate ON (70% VDSto 50% VDD)||−dVDS/dtON||0.8|1.2|V��s| |Slew−Rate OFF (50% VDSto 70% VDD)||dVDS/dtOFF||0.3|0.5|| |**SELF PROTECTION CHARACTERISTICS **(TJ= 25°C unless otherwise noted) (Note 4)||||||| |Current Limit|VDS= 10 V, VGS= 5.0 V, TJ= 25°C|ILIM|3.7|4.3|5.0|A| ||VDS= 10 V, VGS= 5.0 V, TJ= 150°C<br>(Note 5)||2.3|3.0|3.7|| ||VDS= 10 V, VGS= 10 V, TJ= 25°C||4.2|4.8|5.4|| ||VDS= 10 V, VGS= 10 V, TJ= 150°C<br>(Note 5)||2.7|3.6|4.5|| |Temperature Limit (Turn−off)|VGS= 5.0 V (Note 5)|TLIM(off)|150|175|200|°C| |Thermal Hysteresis|VGS= 5.0 V|�TLIM(on)||15||| |Temperature Limit (Turn−off)|VGS= 10 V (Note 5)|TLIM(off)|150|165|185|| |Thermal Hysteresis|VGS= 10 V|�TLIM(on)||15||| |**GATE INPUT CHARACTERISTICS**(Note 5)||||||| |Device ON Gate Input Current|VGS= 5 V ID= 1.0 A|IGON||50||�A| ||VGS= 10 V ID= 1.0 A|||400||| |Current Limit Gate Input Current|VGS= 5 V, VDS= 10 V|IGCL||0.05||mA| ||VGS= 10 V, VDS= 10 V|||0.4||| |Thermal Limit Fault Gate Input Current|VGS= 5 V, VDS= 10 V|IGTL||0.15||mA| ||VGS= 10 V, VDS= 10 V|||0.7||| |**ESD ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise noted) (Note 5)||||||| |Electro−Static Discharge Capability|Human Body Model (HBM)|ESD|4000|||V| ||Machine Model (MM)||400|||| 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. **www.onsemi.com** **3** **NCV8402D, NCV8402AD** 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. **www.onsemi.com** **4** **NCV8402D, NCV8402AD** ## **TYPICAL PERFORMANCE CURVES** **==> picture [238 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TJstart = 25 ° C<br>TJstart = 150 ° C<br>1<br>10 100<br> (A)<br>IL(max)<br>**----- End of picture text -----**<br> **==> picture [26 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> L (mH)<br>**----- End of picture text -----**<br> **Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance** **==> picture [246 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100 TJstart = 25 ° C<br>TJstart = 150 ° C<br>10<br>10 100<br>L (mH)<br> (mJ)<br>max<br>E<br>**----- End of picture text -----**<br> **Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance** **==> picture [235 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TJstart = 25 ° C<br>1 TJstart = 150 ° C<br>0.1<br>1 10<br>TIME IN CLAMP (ms)<br> (A)<br>IL(max)<br>**----- End of picture text -----**<br> **Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp** **==> picture [243 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>TJstart = 25 ° C<br>100<br>TJstart = 150 ° C<br>10<br>1 10<br>TIME IN CLAMP (ms)<br> (mJ)<br>max<br>E<br>**----- End of picture text -----**<br> **Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp** **==> picture [232 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>TA = 25 ° C 8 V 10 V<br>7<br>6 V<br>6<br>5 V 4 V<br>5<br>4 3.5 V<br>3<br>3 V<br>2<br>1 V GS = 2.5 V<br>0<br>0 1 2 3 4 5<br>VDS (V)<br> (A)<br>ID<br>**----- End of picture text -----**<br> **Figure 6. On−state Output Characteristics** **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>VDS = 10 V −40 ° C<br>4 25 ° C<br>100 ° C<br>3<br>150 ° C<br>2<br>1<br>0<br>1 2 3 4 5<br>VGS (V)<br> (A)<br>ID<br>**----- End of picture text -----**<br> **Figure 7. Transfer Characteristics** **www.onsemi.com** **5** **NCV8402D, NCV8402AD** ## **TYPICAL PERFORMANCE CURVES** **==> picture [489 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 400 350<br>150 ° C, ID = 0.5 A 150 ° C, VGS = 5 V<br>300<br>300 150 ° C, I D = 1.7 A 150 ° C, VGS = 10 V<br>250<br>200 100 ° C, ID = 0.5 A 100 ° C, ID = 1.7 A 200 100 ° C, VGS = 5 V 100 ° C, VGS = 10 V<br>25 ° C, ID = 1.7 A 25 ° C, ID = 0.5 A 25 ° C, VGS = 5 V<br>150 °<br>25 C, V GS = 10 V<br>100<br>−40 ° C, ID = 1.7 A −40 ° C, ID = 0.5 A 100 −40 ° C, VGS = 5 V<br>−40 ° C, VGS = 10 V<br>0 50<br>4 5 6 7 8 9 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>VGS (V) ID (A)<br>) � ) �<br> (m (m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br> **Figure 8. RDS(on) vs. Gate−Source Voltage** **Figure 9. RDS(on) vs. Drain Current** **==> picture [492 x 393] intentionally omitted <==** **----- Start of picture text -----**<br> 2 8<br>ID = 1.7 A −40 ° C<br>1.75 7<br>1.5 VGS = 5 V 6 25 ° C<br>1.25 5<br>100 ° C<br>1 VGS = 10 V 4 150 ° C<br>0.75 3<br>VDS = 10 V<br>0.5 2<br>−40 −20 0 20 40 60 80 100 120 140 5 6 7 8 9 10<br>T ( ° C) VGS (V)<br>Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source<br>Voltage<br>8 10<br>VGS = 0 V<br>7 150 ° C<br>1<br>6 VGS = 10 V<br>0.1<br>5 100 ° C<br>0.01<br>4<br>VGS = 5 V 25 ° C −40 ° C<br>0.001<br>3<br>VDS = 10 V<br>2 0.0001<br>−40 −20 0 20 40 60 80 100 120 140 10 15 20 25 30 35 40<br>TJ ( ° C) VDS (V)<br> (A)<br>ILIM<br> (NORMALIZED)<br>DS(on)<br>R<br>A)<br>�<br> (A) (<br>ILIM IDSS<br>**----- End of picture text -----**<br> **Figure 12. Current Limit vs. Junction Temperature** **Figure 13. Drain−to−Source Leakage Current** **www.onsemi.com** **6** **NCV8402D, NCV8402AD** ## **TYPICAL PERFORMANCE CURVES** **==> picture [232 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>ID = 150 � A<br>1.1 VGS = VDS<br>1<br>0.9<br>0.8<br>0.7<br>0.6<br>−40 −20 0 20 40 60 80 100 120 140<br>T ( ° C)<br> (V)<br>GS(th)<br>NORMALIZED V<br>**----- End of picture text -----**<br> **Figure 14. Normalized Threshold Voltage vs. Temperature** **==> picture [244 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1.1<br>1 −40 ° C<br>0.9 25 ° C<br>0.8 100 ° C<br>0.7<br>150 ° C<br>0.6<br>VGS = 0 V<br>0.5<br>1 2 3 4 5 6 7 8 9 10<br>IS (A)<br> (V)<br>SD<br>V<br>**----- End of picture text -----**<br> **Figure 15. Source−Drain Diode Forward Characteristics** **==> picture [237 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>ID = 2.5 A<br>VDD = 12 V<br>RG = 0 �<br>150<br>100<br>td(off)<br>50 tf<br>tr<br>td(on)<br>0<br>3 4 5 6 7 8 9 10<br>VGS (V)<br>Figure 16. Resistive Load Switching Time vs.<br>Gate−Source Voltage<br>s)<br>�<br>TIME (<br>**----- End of picture text -----**<br> ## **==> picture [225 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>ID = 2.5 A<br>VDD = 12 V<br>0.8 RG = 0 �<br>0.6 −dVDS/dt(on)<br>0.4<br>dVDS/dt(off)<br>0.2<br>0<br>3 4 5 6 7 8 9 10<br>VGS (V)<br>**----- End of picture text -----**<br> **Figure 17. Resistive Load Switching Drain−Source Voltage Slope vs. Gate−Source Voltage** **==> picture [240 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>ID = 2.5 A<br>V DD = 12 V<br>td(off), (VGS = 10 V)<br>75<br>tr, (VGS = 5 V)<br>50 tf, (VGS = 10 V) tf, (VGS = 5 V)<br>t d(off) , (V GS = 5 V)<br>25 tr, (VGS = 10 V)<br>t d(on) , (V GS = 5 V)<br>0 td(on), (VGS = 10 V)<br>0 400 800 1200 1600 2000<br>RG ( � )<br>s)<br>�<br>TIME (<br>**----- End of picture text -----**<br> **Figure 18. Resistive Load Switching Time vs. Gate Resistance** **==> picture [244 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.8 −dVDS/dt(on), VGS = 10 V<br>0.6<br>0.4<br>dVDS/dt(off), VGS = 5 V dVDS/dt(off), VGS = 10 V<br>0.2<br>−dVDS/dt(on), VGS = 5 V ID = 2.5 A<br>VDD = 12 V<br>0<br>0 500 1000 1500 2000<br>RG ( � )<br>s)<br>�<br>DRAIN−SOURCE VOLTAGE SLOPE (V/<br>**----- End of picture text -----**<br> **Figure 19. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance** **www.onsemi.com** **7** **NCV8402D, NCV8402AD** ## **TYPICAL PERFORMANCE CURVES** **==> picture [491 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Duty Cycle = 50%<br>100<br>20%<br>10 10%<br>5%<br>2%<br>1 1%<br>0.1<br>Single Pulse<br>0.01<br>0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE WIDTH (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br> **Figure 20. Transient Thermal Resistance** **www.onsemi.com** **8** **NCV8402D, NCV8402AD** ## **TEST CIRCUITS AND WAVEFORMS** **==> picture [207 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> RL<br>VIN<br>D +<br>RG VDD<br>G DUT −<br>S<br>IDS<br>**----- End of picture text -----**<br> **Figure 21. Resistive Load Switching Test Circuit** **==> picture [332 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 90%<br>10%<br>VIN<br>td(ON) tr<br>td(OFF)<br>tf<br>90%<br>10%<br>IDS<br>**----- End of picture text -----**<br> **Figure 22. Resistive Load Switching Waveforms** **www.onsemi.com** **9** **NCV8402D, NCV8402AD** ## **TEST CIRCUITS AND WAVEFORMS** **==> picture [252 x 223] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>VDS<br>VIN<br>D +<br>RG<br>VDD<br>G DUT −<br>S<br>tp<br>IDS<br>**----- End of picture text -----**<br> **Figure 23. Inductive Load Switching Test Circuit** **==> picture [326 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> 5 V<br>VIN 0 V<br>Tav<br>T<br>p<br>V(BR)DSS<br>Ipk<br>VDD<br>VDS<br>VDS(on)<br>IDS<br>0<br>**----- End of picture text -----**<br> **Figure 24. Inductive Load Switching Waveforms** **www.onsemi.com** **10** **NCV8402D, NCV8402AD** ## **PACKAGE DIMENSIONS** **SOIC−8** CASE 751−07 ISSUE AK **==> picture [468 x 440] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>−X− 1. DIMENSIONING AND TOLERANCING PER<br>ANSI Y14.5M, 1982.<br>A 2. CONTROLLING DIMENSION: MILLIMETER.<br>3. DIMENSION A AND B DO NOT INCLUDE<br>MOLD PROTRUSION.<br>4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)<br>8 5 PER SIDE.<br>pa 5. DIMENSION D DOES NOT INCLUDE DAMBAR<br>B S 0.25 (0.010) M Y M PROTRUSION. ALLOWABLE DAMBAR<br>PROTRUSION SHALL BE 0.127 (0.005) TOTAL<br>1 IN EXCESS OF THE D DIMENSION AT<br>4 MAXIMUM MATERIAL CONDITION.<br>−Y− K 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW<br>STANDARD IS 751−07.<br>G MILLIMETERS INCHES<br>DIM MIN MAX MIN MAX<br>A 4.80 5.00 0.189 0.197<br>C N X 45 B 3.80 4.00 0.150 0.157<br>SEATING C 1.35 1.75 0.053 0.069<br>PLANE D 0.33 0.51 0.013 0.020<br>−Z− G 1.27 BSC 0.050 BSC<br>H 0.10 0.25 0.004 0.010<br>0.10 (0.004) J 0.19 0.25 0.007 0.010<br>H D M J K 0.40 1.27 0.016 0.050<br>M 0 8 0 8<br>N 0.25 0.50 0.010 0.020<br>0.25 (0.010) M Z Y S X S S 5.80 6.20 0.228 0.244<br>STYLE 11:<br>SOLDERING FOOTPRINT* PIN 1. SOURCE 1<br>2. GATE 1<br>3. SOURCE 2<br>4. GATE 2<br>5. DRAIN 2<br>1.52 6. DRAIN 2<br>0.060 7. DRAIN 1<br>8. DRAIN 1<br>p ane<br>7.0 4.0<br>0.275 mal 0.155<br>0.6 1.270<br>0.024 gone 0.050<br>SCALE 6:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **www.onsemi.com** **NCV8402D/D** **11**
Updated at March 21, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →