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NCV1413BDR2G
Bipolar Transistor Array, Dual NPN, 50 V, 500 mA
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:-; DC Collector Current:500mA; DC Current Gain hFE:1000hFE; Transistor Case Style:SOIC; No. of
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 16Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- Power Dissipation NPN: -
- Power Dissipation PNP: -
- Transistor Case Style: SOIC
- Transition Frequency NPN: -
- Transition Frequency PNP: -
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 1000hFE
- DC Current Gain hFE Min PNP: -
- Continuous Collector Current NPN: 500mA
- Continuous Collector Current PNP: -
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage Max PNP: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.223 € |
| Current stock | 50+ |
| Lead time | 7 days |
Datasheet
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Updated at March 18, 2026