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MW7IC930NBR1
RF FET Transistor, 65 V, 728 MHz, 960 MHz, TO-272WB
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- Manufacturer: NXP
- Product type: RF FETs
- Channel Type: N Channel
- Transistor Mounting: Flange
- Transistor Case Style: TO-272WB
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 44.7 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor** Technical Data Document Number: MW7IC930N Rev. 1, 10/2010 ## **RF LDMOS Wideband Integrated Power Amplifiers** The MW7IC930N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation. ## **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** ## **Driver Application — 900 MHz** - Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ||Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%<br>Probability on CCDF.|Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%| |---|---|---| |•|**Frequency (1)**<br>**Gps**<br>**(dB)**<br>**PAE**<br>**(%)**<br>**ACPR**<br>**(dBc)**<br>920 MHz<br>36.6<br>16.1<br>--48.0<br>940 MHz<br>36.8<br>16.7<br>--48.7<br>960 MHz<br>36.6<br>17.3<br>--48.6<br>Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 Watts CW<br>~~——~~|| ||Output Power (3 dB Input Overdrive from Rated Pout)|| |•|Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 30 Watts|| ||CW Pout.|| - Typical Pout @ 1 dB Compression Point ≃ 31 Watts CW, IDQ1 = 40 mA, IDQ2 = 340 mA ## **Driver Application — 700 MHz** **728--768 MHz, 920--960 MHz, 3.2 W AVG., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS** **==> picture [147 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> CASE 1886--01<br>TO--270 WB--16<br>PLASTIC<br>MW7IC930NR1<br>CASE 1887--01<br>TO--270 WB--16 GULL<br>PLASTIC<br>MW7IC930GNR1<br>**----- End of picture text -----**<br> - Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. |Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%<br>Probability on CCDF.|Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%|Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%|Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%| |---|---|---|---| |**Frequency**|**Gps**<br>**(dB)**|**PAE**<br>**(%)**|**ACPR**<br>**(dBc)**| |728 MHz|36.4|16.1|--47.7| |748 MHz|36.4|16.1|--47.8| |768 MHz|36.4|16.0|--47.9| **==> picture [63 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> CASE 1329--09<br>TO--272 WB--16<br>PLASTIC<br>MW7IC930NBR1<br>**----- End of picture text -----**<br> ## **Features** - Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters - On--Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) - Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function **[(2)]** - Integrated ESD Protection - 225°C Capable Plastic Package - RoHS Compliant - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. **==> picture [286 x 79] intentionally omitted <==** **----- Start of picture text -----**<br> VDS1<br>RFin Fo RFout/VDS2<br>VGS1 Quiescent Current<br>VGS2 Temperature Compensation [(2)]<br>**----- End of picture text -----**<br> **Figure 1. Functional Block Diagram** **==> picture [155 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> GND i 1 | re | 16 I GND<br>VDS1NCNC cy= 234 ||LE| 15 NC<br>GND | 5 |<br>RFin 6 14 RFout/VDS2<br>| | ye |<br>GND cy 7 | |<br>VVGS1GS2 = 98 | |<br>NC =cae- 10 13 NC<br>GND CL] 11 12 GND<br>(Top View)<br>Note: Exposed backside of the package is<br>CI | ne | |<br>the source terminal for the transistors.<br>Figure 2. Pin Connections<br>**----- End of picture text -----**<br> 1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application test fixture. See Fig. 7. 2. Refer to AN1977, _Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family_ and to AN1987, _Quiescent Current Control for the RF Integrated Circuit Device Family_ . Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009--2010. All rights reserved. ~~eee~~ **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** ~~Se + ogfreescale”~~ semiconductor RF Device Data Freescale Semiconductor 1 **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|||||||| |---|---|---|---|---|---|---|---| |**Rating**||**Symbol**||**Value**|||**Unit**| |Drain--Source Voltage||VDSS||--0.5, +65|||Vdc| |Gate--Source Voltage||VGS||--6.0, +10|||Vdc| |Operating Voltage||VDD||32, +0|||Vdc| |Storage Temperature Range||Tstg||--65 to +150|||°C| |Case Operating Temperature||TC||150|||°C| |Operating Junction Temperature **(1,2)**||TJ||225|||°C| |Input Power||Pin||20|||dBm| |**Table 2. Thermal Characteristics**|||||||| |**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>(Case Temperature 80°C, 3.2 W CW)<br>Stage 1, 28 Vdc, IDQ1= 106 mA<br>Stage 2, 28 Vdc, IDQ2= 285 mA<br>(Case Temperature 80°C, 30 W CW)<br>Stage 1, 28 Vdc, IDQ1= 40 mA<br>Stage 2, 28 Vdc, IDQ2= 340 mA<br>RθJC<br>5.5<br>1.6<br>5.8<br>1.2<br>°C/W<br>~~ne~~|||||||| |**Table 3. ESD Protection Characteristics**|||||||| |**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>1B (Minimum)<br>Machine Model (per EIA/JESD22--A115)<br>A (Minimum)<br>Charge Device Model (per JESD22--C101)<br>II (Minimum)<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22--A113, IPC/JEDEC J--STD--020<br>3<br>260<br>°C<br>~~a~~|||||||| |**Table 5. Electrical Characteristics** (TA= 25°C unless otherwise noted)|||||||| |**Characteristic**|**Symbol**<br>**Min**|||**Typ**|**Max**||**Unit**| |**Stage 1 — Off Characteristics**<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 65 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>μAdc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 28 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>1<br>μAdc<br>Gate--Source Leakage Current<br>(VGS= 1.5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>1<br>μAdc<br>~~See~~|||||||| |**Stage 1 — On Characteristics**|||||||| |Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 14μAdc)<br>VGS(th)<br>1.2<br>2<br>2.7<br>Vdc<br>Gate Quiescent Voltage<br>(VDS= 28 Vdc, IDQ1= 106 mA)<br>VGS(Q)<br>—<br>2.8<br>—<br>Vdc<br>Fixture Gate Quiescent Voltage **(4)**<br>(VDD= 28 Vdc, IDQ1= 106 mA, Measured in Functional Test)<br>VGG(Q)<br>6.9<br>9.4<br>11.9<br>Vdc<br>~~ers~~|||||||| |1. Continuous use at maximum temperature will affect MTTF.|||||||| |2. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access MTTF|||||||| |calculators by product.|||||||| 3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. VGG = 3.3 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. (continued) **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 2 **Table 5. Electrical Characteristics** (TA = 25°C unless otherwise noted) **(continued)** |**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**| |---| |**Stage 2 — Off Characteristics**| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 65 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>μAdc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 28 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>1<br>μAdc<br>Gate--Source Leakage Current<br>(VGS= 1.5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>1<br>μAdc<br>~~ne~~| |**Stage 2 — On Characteristics**| |Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 74μAdc)<br>VGS(th)<br>1.2<br>2<br>2.7<br>Vdc<br>Gate Quiescent Voltage<br>(VDS= 28 Vdc, IDQ2= 285 mA)<br>VGS(Q)<br>—<br>2.6<br>—<br>Vdc<br>Fixture Gate Quiescent Voltage **(1)**<br>(VDD= 28 Vdc, IDQ2= 285 mA, Measured in Functional Test)<br>VGG(Q)<br>4.2<br>5.9<br>7.6<br>Vdc<br>Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 740 mA)<br>VDS(on)<br>0.1<br>0.3<br>0.8<br>Vdc<br>~~Ee~~| |**Functional Tests (2,3)** (In Freescale Test Fixture, 50 ohm system) VDD= 28 Vdc, IDQ1= 106 mA, IDQ2= 285 mA, Pout= 3.2 W Avg.,| |f = 940 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%| |Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @±5 MHz Offset.| |Power Gain<br>Gps<br>33<br>35.9<br>38<br>dB<br>Power Added Efficiency<br>PAE<br>14<br>16.5<br>_—_<br>%<br>Adjacent Channel Power Ratio<br>ACPR<br>_—_<br>--49.5<br>--46<br>dBc<br>Input Return Loss<br>IRL<br>_—_<br>--18.7<br>--9<br>dB<br>~~see~~| |**Typical Broadband Performance — 900 MHz**(In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD= 28 Vdc, IDQ1=| |106 mA, IDQ2= 285 mA, Pout= 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability| |on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @±5 MHz Offset.| |**Frequency**<br>**Gps (dB)**<br>**PAE (%)**<br>**ACPR (dBc)**<br>**IRL (dB)**<br>920 MHz<br>36.6<br>16.1<br>--48.0<br>--19.9<br>940 MHz<br>36.8<br>16.7<br>--48.7<br>--20.8<br>960 MHz<br>36.6<br>17.3<br>--48.6<br>--19.7<br>~~———~~| |1. VGG= 2.25 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit| |schematic.| 2. Part internally matched both on input and output. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. (continued) **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 3 **Table 5. Electrical Characteristics** (TA = 25°C unless otherwise noted) **(continued)** |**Characteristic**||**Symbol**||**Min**||**Typ**|**Max**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---| |**Typical Performance — 900 MHz**(In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD= 28 Vdc, I||||||= 28 Vdc, IDQ1= 106 mA, IDQ2=|||| |285 mA, 920--960 MHz Bandwidth|||||||||| |VDD= 28 Vdc, IDQ1= 40 mA, IDQ2= 340 mA||P1dB||—||31|—||W| |Pout@ 1 dB Compression Point, CW|||||||||| |IMD Symmetry @ 25 W PEP, Poutwhere IMD Third Order||IMDsym|||||||MHz| |Intermodulation30 dBc||||—||45|—||| |(Delta IMD Third Order Intermodulation between Upper and Lower|||||||||| |Sidebands > 2 dB)|||||||||| |VBW Resonance Point||VBWres||—||80|—||MHz| |(IMD Third Order Intermodulation Inflection Point)|||||||||| |Quiescent Current Accuracy over Temperature **(1)**||∆IQT||—||0.02|—||%| |with 3 kΩGate Feed Resistors (--30 to 85°C)|||||||||| |Gain Flatness in 40 MHz Bandwidth @ Pout= 3.2 W Avg.||GF||—||0.2|—||dB| |Gain Variation over Temperature||∆G||—|0.036||—||dB/°C| |(--30°C to +85°C)|||||||||| |Output Power Variation over Temperature||∆P1dB||—||0.01|—||dBm/°C| |(--30°C to +85°C)|||||||||| |**Typical W--CDMA Broadband Performance — 700 MHz** (In Freescale 700 MHz Application Test Fixture, 50 ohm system) VDD= 28 Vdc,|||||||||| |IDQ1= 106 mA, IDQ2= 285 mA, Pout= 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%||||||= 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%||= 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%|| |Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @±5 MHz Offset.|||||||||| |**Frequency**|**Gps (dB)**|||**PAE (%)**||**ACPR (dBc)**|**ACPR (dBc)**|**IRL (dB)**|| |728 MHz||36.4||16.1||--47.7|||--17.9| |748 MHz||36.4||16.1||--47.8|||--20.7| |768 MHz||36.4||16.0||--47.9|||--21.8| 1. Refer to AN1977, _Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family_ and to AN1987, _Quiescent Current Control for the RF Integrated Circuit Device Family_ . Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 4 **==> picture [462 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> °o 080 VDD1 Qo ° o2o oo o2o °<br>° 0000<br>2$ 55 Asers ot5 ieoo 9900000000000%5SB ecsoccee oo005<br>°° 0000000co °° °° C14 C15<br>O° 6) 90000000000,° O° | ff [_~~s co R7 VDD2<br>° ° ° Be 0000000000 bod<br>°°° ° 0000000 ° °° °° ° O000000000EK— C13 00 FOTOk, O00<br>8oO °° °° omy3° rd— [o° C16 °°<br>°5Oo55 o(f)o5620Oso° C17 °olfe) S S5 ms83° C9 BD° C8 C7 °°Oo ole}282o0000000000000©000000000000000000000000000000000003000000000(4)P)occ00000de G6fe)0 °°°°8 °°°° e200oO 08<br>000000000000000000000000 SO |||S— C4K=|}|C co000000000000000©00000000000000000 eee eee 0000000<br>C11 L |<br>C18 C6 C5 C4 C12<br>000000000000000000000000 — 9200p 00000000000000000000000000000<br>°O000000 OgO00fO00000 R4 R5 R6 °520PZPO000o O°6 loOOCOOGOGOO°C C2 O C1 °°° °000005°o C10 °526OGe° °526OGo° 0°6Oo°<br>VGG1 ° C3 8 °° °°<br>000000000000000000000 ° ° °<br>5 O ° S<br>VGG2 000000000000000000000 lolo8 oO °°8 °}0 BD #&“Seos fi freescalele MW7IC930NRev 2 oO°8<br>lo clo co oloo 000 oo9 . 9900000000000(oRononononononenene)o2oo4 0 °Oo0 6 Oo oosemiconductor5 oL05 ° 6<br>zor R1 R2 R3 SG GS a an Ge<br>CUT OUT AREA<br>**----- End of picture text -----**<br> **Figure 3. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Layout — 900 MHz** **Table 6. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 900 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1, C4, C7|47 pF Chip Capacitors|ATC600F470JT250XT|ATC| |C2, C5, C8|10 nF, 50 V Chip Capacitors|C0603C103J5RAC--TU|Kemet| |C3, C6|1μF, 50 V Chip Capacitors|GRM21BR71H105KA12L|Murata| |C9, C15|10μF, 50 V Chip Capacitors|GRM55DR61H106KA88L|Murata| |C10|16 pF Chip Capacitor|ATC100B160JT500XT|ATC| |C11|6.2 pF Chip Capacitor|ATC100B6R2BT500XT|ATC| |C12|7.5 pF Chip Capacitor|ATC100B7R5CT500XT|ATC| |C13, C14|47 pF Chip Capacitors|ATC100B470JT500XT|ATC| |C16, C17|100μF, 50 V Electrolytic Capacitors|MCGPR35V337M10X16--RH|MCGPR35V337M10X16--RH<br>Multicomp| |C18|0.5 pF Chip Capacitor|ATC100B0R5BT500XT|ATC| |R1, R2, R3, R4, R5, R6|1000Ω, 1/4 W Chip Resistors|CRCW12061K00FKEA|Vishay| |R7|0Ω, 3A Chip Resistor|CRCW12060000Z0EA|Vishay| |PCB|0.020″,εr= 3.5|RF--35|Taconic| **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 5 **TYPICAL CHARACTERISTICS — 900 MHz** **==> picture [405 x 605] intentionally omitted <==** **----- Start of picture text -----**<br> 38.5 20<br>VDD = 28 Vdc, Pout = 3.2 W (Avg.), IDQ1 = 106 mA<br>38 IDQ2 = 285 mA, Single--Carrier W--CDMA PAE 18<br>37.5 oe 16<br>37 pf} te | 14<br>36.5 mE EEN Gps 12<br>36 --40 --18 0.5<br>35.5 PARC --42 --20 0<br>TN E ?<br>35 ee e S --44 --22 --0.5<br>3.84 MHz Channel Bandwidth IRL<br>34.5 Input Signal PAR = 7.5 dB @ 0.01% WN ee ae --46 --24 --1<br>ACPR<br>34 Probability on CCDF --48 --26 --1.5<br>33.5 4+| OT " | LZ --50 | --28 | --2<br>800 825 850 875 900 925 950 975 1000<br>f, FREQUENCY (MHz)<br>Figure 4. Output Peak--to--Average Ratio Compression (PARC)<br>Broadband Performance @ Pout = 3.2 Watts Avg.<br>--10<br>VDD = 28 Vdc, Pout = 25 W (PEP), IDQ1 = 106 mA<br>IDQ2 = 285 mA, Two--Tone Measurements<br>--20 (f1 + f2)/2 = Center Frequency of 940 MHz<br>IM3--U<br>ra<br>--30<br>P| LUE IM3--L FL<br>--40 IM5--U<br>BE<br>IM5--L<br>IM7--L<br>--50<br>S M e<br>IM7--U<br>--60 PE T rh(i<br>1 10 100<br>TWO--TONE SPACING (MHz)<br>Figure 5. Intermodulation Distortion Products<br>versus Two--Tone Spacing<br>37.5 1 46 --26<br>Gps<br>37 0 — 40 --30<br>PARC --1 dB = 6.41 W<br>36.5 --1 NK 34 --34<br>VDD = 28 Vdc<br>--2 dB = 8.98 W<br>IDQ1 = 106 mA<br>36 --2 IDQ2 = 285 mA 28 --38<br>f = 940 MHz --3 dB = 12.17 W<br>35.5 --3 K Z Oo 22 --42<br>PAE Single--Carrier W--CDMA<br>35 --4 LL 3.84 MHz Channel Bandwidth ~ 16 --46<br>Input Signal PAR = 7.5 dB @ 0.01%<br>34.5 --5 oo ACPR Probability on CCDF 10 --50<br>2 5 8 11 14<br>Pout, OUTPUT POWER (WATTS)<br>EFFICIENCY (%)<br>PAE, POWER ADDED<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>IMD, INTERMODULATION DISTORTION (dBc)<br>ACPR (dBc)<br>, POWER GAIN (dB)<br>ps<br>G<br>PROBABILITY ON CCDF (dB)<br>OUTPUT COMPRESSION AT 0.01% PAE, POWER ADDED EFFICIENCY (%)<br>**----- End of picture text -----**<br> **Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power** **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 6 **TYPICAL CHARACTERISTICS — 900 MHz** **==> picture [303 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 38 60 0<br>960 MHz<br>37.5 Gps 960 MHz 54 --5<br>940 MHz<br>37 Ro 920 MHz 48 --10<br>36.5 VDD = 28 Vdc 920 MHz 960 MHz 940 MHz 42 --15<br>36 IDQ1 = 106 mA, IDQ2 = 285 mA 36 --20<br>Single--Carrier W--CDMA, 3.84 MHz<br>35.5 Channel Bandwidth, Input Signal 30 --25<br>PAR = 7.5 dB @ 0.01% 920 MHz<br>35 Probability on CCDF 24 --30<br>34.5 AGN 18 --35<br>PAE<br>34 AA NW 12 --40<br>33.5 6 --45<br>Tr t ACPR ON<br>33 — a 0 --50<br>1 10 50<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 7. Single--Carrier W--CDMA Power Gain, Power Added<br>Efficiency and ACPR versus Output Power<br>40 0<br>Gain<br>35 p o p --5<br>30 --10<br>NK<br>25 --15<br>vaNeee<br>20 wa VDD = 28 Vdc IRL ae --20<br>Pin = --10 dBm<br>15 IDQ1 = 106 mA --25<br>ia IDQ2 = 285 mA \ fo \.<br>10 = \vy f}o\ --30<br>450 550 650 750 850 950 1050 1150 1250<br>f, FREQUENCY (MHz)<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G<br>PAE, POWER ADDED EFFICIENCY (%)<br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br> **Figure 8. Broadband Frequency Response** ## **W--CDMA TEST SIGNAL** **==> picture [500 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 100 a 100 Oe<br>10<br>--10<br>po | | ey S e<br>3.84 MHz<br>1 --20 Channel BW<br>PPE Input Signal PA LE --30 Pee E E<br>PPKEE) A<br>0.1<br>--40<br>0.01 p o . --50 ee<br>W--CDMA. ACPR Measured in 3.84 MHz --60 --ACPR in 3.84 MHz +ACPR in 3.84 MHz<br>0.001 Channel Bandwidth @Input Signal PAR = 7.5 dB @ 0.01% ±5 MHz Offset. Ne\ --70 Cee Integrated BW EP Integrated BW A<br>0.0001 PSS Probability on CCDF --80 Gee<br>0 1 2 3 4 5 6 7 8 9 10 --90 S T S<br>PEAK--TO--AVERAGE (dB) --100 TEE<br>Figure 9. CCDF W--CDMA IQ Magnitude --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9<br>Clipping, Single--Carrier Test Signal<br>f, FREQUENCY (MHz)<br>(dB)<br>PROBABILITY (%)<br>**----- End of picture text -----**<br> **Figure 10. Single--Carrier W--CDMA Spectrum** **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg. ||**f**|||**Zin**|||**Zload**|| |---|---|---|---|---|---|---|---|---| ||**MHz**|||Ω|||Ω|| ||820|||37.95 + j2.31|||4.70 + j0.98|| ||840|||39.95 + j2.72|||4.29 + j1.23|| ||860|||42.70 + j1.02|||3.93 + j1.67|| ||880|||44.40 -- j1.38|||3.63 + j2.15|| ||900|||46.25 -- j4.92|||3.41 + j2.61|| ||920|||45.70 -- j8.41|||3.14 + j3.05|| ||940|||45.46 -- j11.47|||2.94 + j3.48|| ||960|||45.07 -- j15.19|||2.85 + j3.90|| ||980|||43.49 -- j18.03|||2.69 + j4.32|| |Zin<br>=||Device input impedance as measured from||||||| |||gate to ground.||||||| |Zload<br>=||Test circuit impedance as measured from||||Test circuit impedance as measured from||| |||drain to ground.||||||| ||Device<br>Under Test<br>Output<br>Matching<br>Network<br>va=|||||||| ||**Zin**|||**Zload**||||| **Figure 11. Series Equivalent Input and Load Impedance — 900 MHz** **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 8 ## **ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS — 900 MHz** **==> picture [233 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pulsed CW,<br>10 μsec(on), 10% Duty Cycle<br>51<br>Ideal<br>50<br>ee ee<br>f = 960 MHz<br>49 ee<br>f = 920 MHz<br>48 NA<br>47 ne<br>Actual<br>46<br>TT Za r<br>f = 920 MHz<br>45 R r<br>f = 960 MHz<br>44 AT Lh<br>f = 940 MHz f = 940 MHz<br>43 Ao<br>42 FA<br>41 AEE<br>9 10 11 12 13 14 15 16 17 18 19<br>Pin, INPUT POWER (dBm)<br>, OUTPUT POWER (dBm)<br>out<br>P<br>**----- End of picture text -----**<br> NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V |**f**<br>**(MHz)**|**P1dB**|**P1dB**|**P3dB**|**P3dB**| |---|---|---|---|---| ||**Watts**|**dBm**|**Watts**|**dBm**| |920|43|46.3|51|47.1| |940|42|46.3|50|47| |960|42|46.3|50|47| Test Impedances per Compression Level |**f**<br>**(MHz)**||**Zsource**<br>Ω|**Zload**<br>Ω| |---|---|---|---| |920|P1dB|55.82 + j15.71|4.54 + j1.15| |940|P1dB|52.56 + j20.20|4.38 + j1.21| |960|P1dB|49.18 + j25.00|5.04 + j1.15| **Figure 12. Pulsed CW Output Power versus Input Power @ 28 V** **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 9 **==> picture [462 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> °o 020 VDD1 Qo ) o2o o2o oo °<br>° 0000<br>2 Ae 2 Ge Gy IBoosoocee oooos(<br>8 5% > 5 oo 0900000000000 5<br>°° 0000000feo} °° °° C14 C15<br>0° Oo) 0000000000,5) Psfc) | i —,~ Ico R7 VDD2<br>° ° ° G4) o O©000000000 pod<br>°°° ° 00000000000 °° °° ° OC0000000OE— C13 00 FOTO& OOO<br>°° ° ° ° °3° C68 ° —rt— fo)° C16 °©<br>° 020 C17 O C9 8 26 O00000 TW Vv Og ° °<br>O o(f)o ° 8 C8 C7 5 Q eye000000000(4) o ° ° 4<br>o Oso fe) 0 ° Po0000000000000 ° ° °<br>o ° S Sb 3 6 200000000000000000 ° © Soo00<br>5 3 8 09900000000000000 8 8<br>©00000000000000000000000 desoesossnsssessssscsssesces) | |Cy———| =K=|| PC cocXD00000000000000©0000000000000000 0900000000000<br>C10 C11<br>000000000000000000000000 C18 LI— qoBose, C6 jee—JoosTDTSTSTOO C5 A C4 — _— 9900900000000000000000000000000000|_|—— | C12<br>°<br>O 000000 R4 R5 R6 )526Oo O°6 loo00OwogOD6 C2 O C1 8 5) 5206 526 8°<br>VGG1 CoDTTey00POCCOO0XATy TTPDP 000 loloe C3 °°°° 00000555 oS °ose° °Osoo 6Oo}O5}<br>©000000000000000000000©000000000000000000000 lololo ee) fe)°}° S° ee) <2<4 MW7IC930N 83<br>VGG2 6 } °3 oPOS fi rmreesca le v Rev 2 °}<br>co olooodooo000 9. 900000000000lOCODODD0NDN0N0N0N4 0 °o 6 semiconductor5 5 3°<br>oo oX00 °o Oo oo o20 o<br>R1 R2 R3<br>CUT OUT AREA<br>**----- End of picture text -----**<br> **Figure 13. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Layout — 700 MHz** **Table 7. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 700 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1, C4, C7|47 pF Chip Capacitors|ATC600F470JT250XT|ATC| |C2, C5, C8|10 nF, 50 V Chip Capacitors|C0603C103J5RAC|Kemet| |C3, C6|1μF, 50 V Chip Capacitors|GRM21BR71H105KA12L|Murata| |C9, C15|10μF, 50 V Chip Capacitors|GRM55DR61H106KA88L|Murata| |C10|13 pF Chip Capacitor|ATC100B130JT500XT|ATC| |C11|7.5 pF Chip Capacitor|ATC100B7R5CT500XT|ATC| |C12|6.8 pF Chip Capacitor|ATC100B6R8CT500XT|ATC| |C13, C14|47 pF Chip Capacitors|ATC100B470JT500XT|ATC| |C16, C17|100μF, 50 V Electrolytic Capacitors|MCGPR35V337M10X16--RH|Multicomp| |C18|1.8 pF Chip Capacitor|ATC100B1R8BT500XT|ATC| |R1, R2, R3, R4, R5, R6|1000Ω, 1/4 W Chip Resistors|CRCW12061K00FKEA|Vishay| |R7|0Ω, 3A Chip Resistor|CRCW12060000Z0EA|Vishay| |PCB|0.020″,εr = 3.5|RF--35|Taconic| **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 10 **TYPICAL CHARACTERISTICS — 700 MHz** **==> picture [302 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 37.5 60 0<br>768 MHz<br>37 748 MHz 54 --5<br>36.5 Ceee Gps ee sae 48 --10<br>728 MHz<br>36 VDD = 28 Vdc a Ae 42 --15<br>35.5 IDQ1 = 106 mA, IDQ2 = 285 mA BSH 36 --20<br>Single--Carrier W--CDMA, 3.84 MHz<br>35 Channel Bandwidth, Input Signal PNA 30 --25<br>PAR = 7.5 dB @ 0.01%<br>34.5 Probability on CCDF D> ann 748 MHz 24 --30<br>34 SA 18 --35<br>PAE 728 MHz<br>33.5 768 MHz 12 --40<br>33 a ACPR 6 --45<br>eT ye 748 MHz SE 728 MHz<br>32.5 SS 0 --50<br>1 10 50<br>Pout, OUTPUT POWER (WATTS) AVG.<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G<br>PAE, POWER ADDED EFFICIENCY (%)<br>**----- End of picture text -----**<br> **Figure 14. Single--Carrier W--CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power — 700 MHz** VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg. ||**f**||||**Zin**|||**Zload**|| |---|---|---|---|---|---|---|---|---|---| ||**MHz**||||Ω|||Ω|| ||710||||25.21 -- j1.21|||8.57 + j2.52|| ||720||||33.76 + j5.36|||8.52 + j2.46|| ||730||||38.78 + j1.40|||8.44 + j2.34|| ||740||||40.14 -- j0.76|||8.36 + j2.16|| ||750||||35.46 -- j1.15|||8.30 + j2.00|| ||760||||34.65 -- j0.53|||8.32 + j1.90|| ||770||||34.75 -- j0.43|||8.31 + j1.86|| ||780||||36.20 + j0.81|||8.27 + j1.98|| ||790||||36.18 + j1.33|||8.23 + j2.12|| |Zin<br>=||Device input impedance as measured from|||||||| |||gate to ground.|||||||| |Zload<br>=||Test circuit impedance as measured from|||||Test circuit impedance as measured from||| |||drain to ground.|||||||| ||||||Device|||Output|| ||||||Under Test|||Matching|| |||||||||Network|| ||r”||||[”||||| ||**Zin**||||**Zload**||||| **Figure 15. Series Equivalent Input and Load Impedance — 700 MHz** **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 11 ## **PACKAGE DIMENSIONS** **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 12 **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 13 **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 14 **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 15 **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 16 **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 17 **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 18 **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 19 **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 20 ## **PRODUCT DOCUMENTATION AND SOFTWARE** Refer to the following documents, tools and software to aid your design process. ## **Application Notes** - AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages - AN1955: Thermal Measurement Methodology of RF Power Amplifiers - AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family - AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family - AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages - AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|Aug. 2009|•<br>Initial Release of Data Sheet| |1|Oct. 2010|•<br>Table 1, Maximum Ratings, increased Input Power from 4.7 dBm to 20 dBm to reflect the true capability of<br>the device, p. 2| **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor 21 ## _**How to Reach Us:**_ **Home Page:** www.freescale.com ## **Web Support:** http://www.freescale.com/support **USA/Europe or Locations Not Listed:** Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support ## **Europe, Middle East, and Africa:** Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support ## **Japan:** Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com ## **Asia/Pacific:** Freescale Semiconductor China Ltd. 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Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale t and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009--2010. All rights reserved. **MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1** RF Device Data Freescale Semiconductor Document Number: MW7IC930N 22Rev. 1, 10/2010
Updated at February 9, 2023
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