MW6S010GNR1

Document Number: MW6S010N Rev. 5, 6/2009 VRoHS 

**Freescale Semiconductor** Technical Data 

## **RF Power Field Effect Transistors** 

## N-Channel Enhancement-Mode Lateral MOSFETs 

Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. 

## **MW6S010NR1 MW6S010GNR1** 

- Typical Two-Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP 

Power Gain — 18 dB Drain Efficiency — 32% IMD — -37 dBc 

**450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs** 

- Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power 

## **Features** 

- Characterized with Series Equivalent Large-Signal Impedance Parameters 

- On-Chip RF Feedback for Broadband Stability 

- Qualified Up to a Maximum of 32 VDD Operation 

- Integrated ESD Protection 

- 225 ° C Capable Plastic Package 

- RoHS Compliant 

- In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. 

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CASE 1265-09, STYLE 1<br>TO-270-2<br>PLASTIC<br>MW6S010NR1<br>CASE 1265A-03, STYLE 1<br>TO-270-2 GULL<br>PLASTIC<br>MW6S010GNR1<br>**----- End of picture text -----**<br>


**Table 1. Maximum Ratings** 

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|||||||
|---|---|---|---|---|---|
|Rating|Symbol|Value|Unit|
|Drain-Source Voltage|VDSS|-0.5, +68|Vdc|
|Gate-Source Voltage|VGS|-0.5, +12|Vdc|
|Storage Temperature Range|Tstg|- 65 to +150|°|C|
|Case Operating Temperature|TC|150|°|C|
|Operating Junction Temperature|[(1,2)]|TJ|225|°|C|
|Table 2. Thermal Characteristics|
|Characteristic|Symbol|Value|[(2,3)]|Unit|
|Thermal Resistance, Junction to Case|R|θ|JC|°|C/W|
|Case Temperature 80|°|C, 10 W PEP|2.85|

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**Table 2. Thermal Characteristics** 

1. Continuous use at maximum temperature will affect MTTF. 

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 

3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 

© Freescale Semiconductor, Inc., 2005-2006, 2008-2009. All rights reserved. ~~as~~ RF Device Data Freescale Semiconductor 

**MW6S010NR1 MW6S010GNR1** ~~free seale”~~ 

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|**Table 3. ESD Protection Characteristics**||
|---|---|
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22-A114)<br>1A<br>Machine Model (per EIA/JESD22-A115)<br>A<br>Charge Device Model (per JESD22-C101)<br>III<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22-A113, IPC/JEDEC J-STD-020<br>3<br>260<br>°C<br>~~——~~||
|**Table 5. Electrical Characteristics**(TA= 25°C unless otherwise noted)||
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**|**Unit**|
|**Off Characteristics**||
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 68 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>μAdc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 28 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>1<br>μAdc<br>Gate-Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>1<br>μAdc<br>~~—~~||
|**On Characteristics**||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 100μAdc)<br>VGS(th)<br>1.5<br>2.3<br>3<br>Vdc<br>Gate Quiescent Voltage<br>(VDD= 28 Vdc, ID= 125 mAdc, Measured in Functional Test)<br>VGS(Q)<br>2<br>3.1<br>4<br>Vdc<br>Drain-Source On-Voltage<br>(VGS= 10 Vdc, ID= 0.3 Adc)<br>VDS(on)<br>—<br>0.27<br>0.35<br>Vdc<br>**Dynamic Characteristics**<br>Reverse Transfer Capacitance<br>(VDS= 28 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Crss<br>—<br>0.32<br>—<br>pF<br>Output Capacitance<br>(VDS= 28 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Coss<br>—<br>10<br>—<br>pF<br>Input Capacitance<br>(VDS= 28 Vdc, VGS= 0 Vdc±30 mV(rms)ac @ 1 MHz)<br>Ciss<br>—<br>23<br>—<br>pF<br>**Functional Tests**(In Freescale Test Fixture, 50 ohm system) VDD= 28 Vdc, IDQ= 125 mA, Pout= 10 W PEP, f = 960 MHz, Two-Tone Test,<br>100 kHz Tone Spacing<br>Power Gain<br>Gps<br>17.5<br>18<br>20.5<br>dB<br>Drain Efficiency<br>ηD<br>31<br>32<br>—<br>%<br>Intermodulation Distortion<br>IMD<br>—<br>-37<br>-33<br>dBc<br>Input Return Loss<br>IRL<br>—<br>-18<br>-10<br>dB<br>~~——~~<br>~~— EE~~<br>~~—————~~||
|**Typical Performances**(In Freescale 450 MHz Demo Board, 50οhm system) VDD= 28 Vdc, IDQ= 150 mA, Pout= 10 W PEP, 420-470 MHz,||
|Two-Tone Test, 100 kHz Tone Spacing||
|Power Gain<br>Gps<br>—<br>20<br>—<br>dB<br>Drain Efficiency<br>ηD<br>—<br>33<br>—<br>%<br>Intermodulation Distortion<br>IMD<br>—<br>-40<br>—<br>dBc<br>Input Return Loss<br>IRL<br>—<br>-10<br>—<br>dB<br>~~——_——~~||



**MW6S010NR1 MW6S010GNR1** 

RF Device Data Freescale Semiconductor 

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B1 C11<br>VBIAS + + + + + VSUPPLY<br>C12<br>C2 C3 C4 C6 C7 C15 C16 C18 C19<br>C10<br>C13<br>L1<br>RF<br>RF R1 DUT Z5 Z6 Z7 OUTPUT<br>INPUT Z1 Z2 Z3 Z4<br>C20<br>C14 C17<br>C1<br>C5 C8 C9<br>baie<br>Z1 0.073 ″  x 0.223 ″  Microstrip Z5 0.313 ″  x 0.902 ″  Microstrip<br>Z2 0.112 ″  x 0.070 ″  Microstrip Z6 0.073 ″  x 1.080 ″  Microstrip<br>Z3 0.213 ″  x 0.500 ″  Microstrip Z7 0.073 ″  x 0.314 ″  Microstrip<br>Z4 0.313 ″  x 1.503 ″  Microstrip PCB Rogers ULTRALAM 2000, 0.031 ″ ,  ε r = 2.55<br>**----- End of picture text -----**<br>


**Figure 1. MW6S010NR1(GNR1) Test Circuit Schematic — 900 MHz** 

**Table 6. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 900 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1|Ferrite Bead|2743019447|Fair-Rite|
|C1, C6, C11, C20|47 pF Chip Capacitors|ATC100B470JT500XT|ATC|
|C2, C18, C19|22μF, 35 V Tantalum Capacitors|T491D226K035AT|Kemet|
|C3, C16|220μF, 63 V Electrolytic Capacitors, Radial|2222-136-68221|Vishay|
|C4, C15|0.1μF Chip Capacitors|CDR33BX104AKWS|Kemet|
|C5, C8, C17|0.8-8.0 pF Variable Capacitors, Gigatrim|272915L|Johanson|
|C7, C12|24 pF Chip Capacitors|ATC100B240JT500XT|ATC|
|C9, C10, C13|6.8 pF Chip Capacitors|ATC100B6R8JT500XT|ATC|
|C14|7.5 pF Chip Capacitor|ATC100B7R5JT500XT|ATC|
|L1|12.5 nH Inductor|A04T-5|Coilcraft|
|R1|1 kΩ,1/4 W ChipResistor|CRCW12061001FKEA|Vishay|



**MW6S010NR1 MW6S010GNR1** 

RF Device Data Freescale Semiconductor 

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**Figure 2. MW6S010NR1(GNR1) Test Circuit Component Layout — 900 MHz** 

**MW6S010NR1 MW6S010GNR1** 

RF Device Data Freescale Semiconductor 

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**TYPICAL CHARACTERISTICS — 900 MHz** 

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−8<br>48<br>r η D e −10<br>44<br>———— −12<br>40 IRL a −14<br>a<br>36<br>VDD = 28 Vdc, Pout = 10 W (Avg.) aa −16<br>32 IDQ = 125 mA, 100 kHz Tone Spacing −18<br>28 e e<br>a eseea ae −20<br>24 IMD<br>P|———a ——eee eee eee −22<br>20 oea ——————a a Gps a −24<br>16<br>= e −26<br>910 920 930 940 950 960 970<br>f, FREQUENCY (MHz)<br>Figure 3. Two-Tone Wideband Performance<br>@ Pout = 10 Watts<br>20 −10<br>IDQ = 190 mA VDD = 28 Vdc, IDQ = 125 mA 3rd Order<br>f = 945 MHz, Two−Tone Measurements<br>−20<br>19 100 kHz Tone Spacing<br>BarnPeau 125 mA O|T | I Ia Y 5th Order<br>−30<br>18 “ 90 mA tr E E N | TI Ht<br>LT T  NN })<br>−40<br>17 merit MN ST Ht 7th Order<br>−50<br>16 VDD = 28 Vdc, f = 945 MHz<br>−60<br>Two−Tone Measurements<br>100 kHz Tone Spacing<br>15 —LTT LL −70 B52eelPy,<br>ETI FLT<br>0.1 1 10 100 0.1 1 10 100<br>Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 4. Two-Tone Power Gain versus Figure 5. Intermodulation Distortion Products<br>Output Power versus Output Power<br>−15 48<br>VDD = 28 Vdc, Pout = 10 W (Avg.)  Ideal<br>−20 IDQ = 125 mA, Two−Tone Measurements<br>(f1+f2)/2 = Center Frequency = 945 MHz 46 P3dB = 43.14 dBm (20.61 W)<br>pT TEEPE t ye<br>−25<br>a N ee<br>−30 44 P1dB = 42.23 dBm (16.71 W)<br>−35 3rd Order Sail oT  pe<br>Actual<br>−40 }____}__{_}_}_ =a aT | | a 42 GS aa<br>C H L = ERE<br>−45 5th Order<br>40 VDD = 28 Vdc, IDQ = 125 mA<br>−50 a es 7th Order eel e Pulsed CW, 8  e μsec(on), 1 msec(off)<br>−55 erm le [EL] 38 ann f = 945 MHz<br>0.1 SI 1 10 E 100 = 19 ER 21 23 25 27 29<br>TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm)<br>, POWER GAIN (dB)<br>ps<br>IRL, INPUT RETURN LOSS (dB)<br>IMD, INTERMODULATION DISTORTION (dBc)<br>, DRAIN EFFICIENCY (%), G<br>D<br>η<br>, POWER GAIN (dB)<br>ps<br>G<br>IMD, INTERMODULATION DISTORTION (dBc)<br>, OUTPUT POWER (dBm)<br>out<br>P<br>IMD, INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br>


**Figure 6. Intermodulation Distortion Products versus Tone Spacing** 

**Figure 7. Pulse CW Output Power versus Input Power** 

**MW6S010NR1 MW6S010GNR1** 

RF Device Data Freescale Semiconductor 

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**TYPICAL CHARACTERISTICS — 900 MHz** 

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50 −10<br>VDD = 28 Vdc<br>40 IDQ = 125 mA −20<br>f = 945 MHz<br>pe<br>30 −30<br>HNP<br>20 Gps −40<br>S T et<br>η D<br>10 −50<br>Ba P<br>ACPR<br>0 et e LH!ail −60<br>0.1 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 8. Single-Carrier CDMA ACPR, Power<br>Gain and Power Added Efficiency<br>versus Output Power<br>20 50<br>−30 C 25 C<br>TC = −30 C 85 C<br>19 Gps η D 40<br>18 e 25 C n ae 30<br>TN<br>85 C<br>17 a ren 20<br>16 VDD = 28 Vdc 10<br>C EM ili, \MI| IDQ = 125 mA<br>f = 945 MHz<br>15 tll | 0<br>0.1 1 10 100<br>Pout, OUTPUT POWER (WATTS) CW<br>Figure 9. Power Gain and Power Added<br>Efficiency versus Output Power<br>19 24 5<br>IDQ = 125 mA<br>— — a f = 945 MHz 20 TTT S21 Tee 0<br>18<br>16 −5<br>T A RA ES S E<br>17 12 −10<br>AKA ERAT A<br>8 −15<br>ONAN ho<br>16 VDD = 24 V 28 V 32 V , 4 VPDDout = 10 W CW = 28 Vdc S11 A −20<br>IDQ = 125 mA<br>15 0 −25<br>0 Eid 2 4 6 i 8 a 10 ty 12 14 16 500 e 600 700 e 800 CE 900 1000 e 1100 T 1200<br>Pout, OUTPUT POWER (WATTS) CW f, FREQUENCY (MHz)<br>Figure 10. Power Gain versus Output Power Figure 11. Broadband Frequency Response<br>, POWER GAIN (dB)<br>ps ACPR (dBc)<br>, DRAIN EFFICIENCY (%), G<br>D<br>η<br>, POWER GAIN (dB)<br>ps<br>G DRAIN EFFICIENCY (%)<br>,<br>D<br>η<br>S21 (dB) S11 (dB)<br>, POWER GAIN (dB)<br>ps<br>G<br>**----- End of picture text -----**<br>


**MW6S010NR1 MW6S010GNR1** 

RF Device Data Freescale Semiconductor 

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## **TYPICAL CHARACTERISTICS** 

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**Figure 12. MTTF Factor versus Junction Temperature** 

**MW6S010NR1 MW6S010GNR1** 

RF Device Data Freescale Semiconductor 

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|---|---|---|---|
|f = 800 MHz<br>f = 980 MHz<br>Zo= 25Ω<br>f = 800 MHz<br>f = 980 MHz<br>Zload<br>Zsource<br>AES.XX ‘1 Sanne<br>Swe<br>éESO COOLLAL xD<br>e/a<br>Oe<br>teeeaanPoTAL KAAS<br>LY HL<br>RER<br>LEERE<br>SOS<br>EK Oe sesaars<br>LERID<br>ZB REEL ~~K~~A erasers maar LESde<br>®LROEEEOL LSA ISEER aetus FATT RD<br>g<br>QRRSKY<br>erate gOetenitaTARA<br>SE/s, PERRET<br>SSLSSETTR<br>o/$ f<br>LyLR rrZR<br>TT EA TERRES<br>/ E~~SS~~<br>IT<br>oo es sce ||A<br>of |<br>LYS ~~TE~~T OR SRNR<br>HHS<br>els ~~ge~~<br>~~s~~ee cee ee<br>Hes ~~ee~~<br>ee ere<br>StS<br>gel<br>eh<br>TER RLPORE ET<br>°<br>aeSEBATRey<br>SLEEK PLE,LLYSCRE 4<br>eps]<br>|FAS<br>if aia ameemanees“isiamy EPAEEPY oe SE<br>ef<br>PBB:<br>fae ieeedeit mnaaeeSEEDTOES Sees<br>8}<br>fe sipaipiszi;istiteitameeen ageassds<br>FE<br>elTEE ACEP<br>OES<br>ale<br>seessceae! sri:sisaeaee Reh<br>PTH<br>A TTLT Hes<br>| ores<br>‘1° a<br>meres encrtrseeecrier: | fir,<br>ES apesetesaniecieiszr pemerceeaceeeeresEEE Ee as<br>i" **S**eistame**e**rierenter ea CCAOSS<br>eeeeater titstiiszi<br>waRReCESeSeeer<br>aug<br>ES)<br>HE EEECEE EE||||
||||VDD= 28 Vdc, IDQ= 125 mA, Pout= 10 W PEP|
||||**f**<br>**Zsource**<br>**Zload**|
||||**MHz**<br>Ω<br>Ω|
||||800<br>3.1 + j1.9<br>10.1 + j2.3|
||||820<br>2.8 + j1.7<br>8.3 + j2.5|
||||840<br>2.7 + j2.2<br>8.2 + j3.3|
||||860<br>3.1 + j3.4<br>9.8 + j4.8|
||||880<br>3.3 + j3.8<br>10.6 + j5.6|
||||900<br>2.9 + j3.7<br>9.5 + j5.5|
||||920<br>2.8 + j4.4<br>10.1 + j5.9|
||||940<br>3.0 + j4.7<br>11.0 + j6.4|
||||960<br>3.2 + j4.9<br>11.8 + j6.6|
||||980<br>3.6 + j5.2<br>12.1 + j7.1|



Zsource = Test circuit impedance as measured from gate to ground. 

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Zload = Test circuit impedance as measured<br>from drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>Zsource Zload<br>**----- End of picture text -----**<br>


**Figure 13. Series Equivalent Source and Load Impedance — 900 MHz** 

**MW6S010NR1 MW6S010GNR1** 

RF Device Data Freescale Semiconductor 

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T1<br>R1<br>VBIAS |_| +<br>C1<br>R2<br>B1<br>R5 B2<br>+ VSUPPLY<br>+<br>C13 C14 C15<br>C2 C3 C4<br>R3<br>T2<br>R4<br>a I] | R6 L1 1 [l<br>RF<br>RF DUT Z6 Z7 Z8 OUTPUT<br>INPUT Z1 Z2 Z3 Z4 Z5<br>C10<br>C12 C11<br>C9<br>C6 C5 C7 C8<br>Z1 0.540 ″  x 0.080 ″  Microstrip Z5 0.475 ″  x 0.330 ″  Microstrip<br>Z2 0.365 ″  x 0.080 ″  Microstrip Z6 0.475 ″  x 0.325 ″  Microstrip<br>Z3 0.225 ″  x 0.080 ″  Microstrip Z8 1.250 ″  x 0.080 ″  Microstrip<br>Z4, Z7 0.440 ″  x 0.080 ″  Microstrip PCB Rogers ULTRALAM 2000, 0.030 ″ ,  ε r = 2.55<br>**----- End of picture text -----**<br>


**Figure 14. MW6S010NR1(GNR1) Test Circuit Schematic — 450 MHz** 

**Table 7. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 450 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1, B2|Ferrite Bead|2743019447|Fair-Rite|
|C1|1μF, 35 V Tantalum Capacitor|T491C105K050AT|Kemet|
|C2, C15|22μF, 35 V Tantalum Capacitors|T491X226K035AT|Kemet|
|C3, C14|0.1μF Chip Capacitors|C1210C104K5RAC|Kemet|
|C4, C9, C10, C13|330 pF Chip Capacitors|ATC700A331JT150XT|ATC|
|C5|4.3 pF Chip Capacitor|ATC100B4R3JT500XT|ATC|
|C6, C11|0.6-8.0 pF Variable Capacitors|27291SL|Johanson|
|C7, C8, C12|4.7 pF Chip Capacitors|ATC100B4R7JT500XT|ATC|
|L1|39μH Chip Inductor|ISC-1210|Vishay|
|R1|10ΩChip Resistor|CRCW080510R0FKEA|Vishay|
|R2|1 kΩChip Resistor|CRCW08051001FKEA|Vishay|
|R3|1.2 kΩChip Resistor|CRCW08051201FKEA|Vishay|
|R4|2.2 kΩChip Resistor|CRCW08052201FKEA|Vishay|
|R5|5 kΩPotentiometer|1224W|Bourns|
|R6|1 kΩChip Resistor|CRCW12061001FKEA|Vishay|
|T1|5 Volt Regulator, Micro 8|LP2951CDMR2G|On Semiconductor|
|T2|NPN Transistor, SOT-23|BC847ALT1G|On Semiconductor|



**MW6S010NR1 MW6S010GNR1** 

RF Device Data Freescale Semiconductor 

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**Figure 15. MW6S010NR1(GNR1) Test Circuit Component Layout — 450 MHz** 

**MW6S010NR1 MW6S010GNR1** 

RF Device Data Freescale Semiconductor 

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**TYPICAL CHARACTERISTICS — 450 MHz** 

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20.4 37<br>20.2 Gps 34<br>20 e e e 31<br>19.8 28<br>η D<br>pp AN<br>19.6 a, VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA XE 25<br>2−Carrier W−CDMA, 10 MHz Carrier Spacing,<br>19.4 | ly 3.84 MHz Channel Bandwidth, PAR = 8.5 dB  KI −40 −6<br>@ 0.01% Probability (CCDF)<br>19.2 −45 −9<br>19 o IRL S ACPR −50 −12<br>18.8 −55 −15<br>CO Se r<br>18.6 ALT1 −60 −18<br>18.4 a pot tT tT −65 −21<br>400 410 420 430 440 450 460 470 480 490 500<br>f, FREQUENCY (MHz)<br>Figure 16. 2-Carrier W-CDMA Broadband Performance @ Pout = 3 Watts Avg.<br>19 55<br>18.8 Gps 50<br>18.5 eS BS 45<br>po] [pe]<br>η D<br>18.3 P|vera| d B 40<br>18 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing, VDD = 28 Vdc, Pout = 7.5 W (Avg.), I | DQ = 150 mA tL NN \ 35<br>3.84 MHz Channel Bandwidth, PAR = 8.5 dB<br>17.817.5 LZa @ 0.01% Probability (CCDF) ee\E −30−35 −4−6<br>ACPR<br>17.3 i −40 −8<br>IRL<br>17 a Ne e eee a −45 −10<br>16.8 ALT1 −50 −12<br>a aaaD<br>16.5 e e −55 −14<br>400 410 420 430 440 450 460 470 480 490 500<br>f, FREQUENCY (MHz)<br>Figure 17. 2-Carrier W-CDMA Broadband Performance @ Pout = 7.5 Watts Avg.<br>30 0 −10<br>VDD = 28 Vdc, IDQ = 150 mA,<br>f = 450 MHz, N−CDMA IS−95 Pilot, −20<br>25 −5<br>NEL S11 LET ELL Sync, Paging, Traffic Codes 8 Se<br>Through 13 −30<br>ACPR<br>20 N r A −10 A<br>−40<br>S21<br>pp e none ALT1<br>15 L P P ae −15 a −50<br>AUPN | EE ee<br>ALT2<br>−60<br>10 VDD = 28 Vdc e e −20 e<br>Pout = 10 W −70<br>IDQ = 150 mA<br>5 Saenenne −25 TTIPATTI −80<br>50 100 150 200 250 300 350 400 450 500 550 600 650 0.1 1 10<br>f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) AVG.<br>, DRAIN<br>D<br>η<br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc), ALT1 (dBc)<br>IRL, INPUT RETURN LOSS (dB)<br>, DRAIN<br>D<br>η<br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc), ALT1 (dBc)<br>IRL, INPUT RETURN LOSS (dB)<br>S21 S11<br>ALT1 & ALT2, CHANNEL POWER (dBc)<br>ACPR, ADJACENT CHANNEL POWER RATIO (dBc)<br>**----- End of picture text -----**<br>


**Figure 18. Broadband Frequency Response** 

**==> picture [204 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 19. Single-Carrier N-CDMA ACPR, ALT1<br>and ALT2 versus Output Power<br>**----- End of picture text -----**<br>


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|f = 400 MHz<br>Zo= 25Ω<br>Zload<br>Zsource<br>f = 500 MHz<br>f = 400 MHz<br>f = 500 MHz<br>Se<br>ATA<br>LED<br>KOGNER<br>SD<br>TIES<br>SES POETS<br>J<br>AK SS<br>A<br>OA<br>SRelnane, [RO<br>OM KvOOK PSKCOAEH ARDS<br>hf ~~—~~ VOSAey eae Od<br>aks<br>S.LR**R**KERESV7 Ss CNX ‘A \\ CEH Tt SAY<br>OSSKKK SSSASISS<br>EEE<br>TARR<br>KILRERLRROK KS<br>SCE Ts<br>S¥e/p<br>fyLOL<br>REO<br>SS Ss SHEe<br>Th<br>LyeLEEPER K ~~EE~~SOSELs<br>/ STEERSORL ~~S~~OSSSL LTRS<br>¢ =A<br>Carats Ok<br>reretceerecneespes:<br>oh LEE<br>PR<br>AoC SSSSSATT<br>Shs ~~**a**~~<br>~~ee~~e ee<br>f/f<br>~~ee~~e ee<br>of || sie EGT~~ER~~RPERO SSE TTX<br>sle/ |Aepee epee Oe PRR<br>SAE<br>7s] feeee areeaoe See aya i TTTROE<br>le]<br>]RSS ~~cof~~ SEAT PLEEa Keo<br>ale<br>secceiiiiiitieritt/eumemae an seesprirmeaeereremmnerie<br>Bee ge:<br>s[°<br>Sesesiaiiitiaa-(iit wegeeeeaa<br>3<br>13 Patera | sttehCO<br>T|] FREES aisrnceste ci SCEESrEAC SSS<br>3<br>Baseseeeen,<br>rl|
|---|
|VDD= 28 Vdc, IDQ= 150 mA, Pout= 10 W PEP|
|**f**<br>**Zsource**<br>**Zload**|
|**MHz**<br>Ω<br>Ω|
|400<br>9.0 + j3.8<br>15.0 + j1.4|
|420<br>8.8 + j5.4<br>14.3 + j3.3|
|440<br>9.6 + j6.6<br>15.0 + j4.7|
|460<br>10.6 + j9.5<br>16.3 + j7.3|
|480<br>10.7 + j12.6<br>16.4 + j11.1|
|500<br>11.5 + j13.9<br>16.9 + j12.7|



Zsource = Test circuit impedance as measured from gate to ground. 

**==> picture [189 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Zload = Test circuit impedance as measured<br>from drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>Zsource Zload<br>**----- End of picture text -----**<br>


**Figure 20. Series Equivalent Source and Load Impedance — 450 MHz** 

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## **PACKAGE DIMENSIONS** 

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## **PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE** 

Refer to the following documents to aid your design process. 

## **Application Notes** 

- AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages 

- AN1949: Mounting Method for the MHVIC910HR2 (PFP-16) and Similar Surface Mount Packages 

- AN1955: Thermal Measurement Methodology of RF Power Amplifiers 

- AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 

## **Engineering Bulletins** 

- EB212: Using Data Sheet Impedances for RF LDMOS Devices 

## **Software** 

- Electromigration MTTF Calculator 

- RF High Power Model 

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. 

## **REVISION HISTORY** 

The following table summarizes revisions to this document. 

|**Revision**|**Date**|**Description**|
|---|---|---|
|4|Dec. 2008|•<br>Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for<br>standardization across products, p. 1<br>•<br>Removed Total Device Dissipation from Max Ratings table as data was redundant (information already<br>provided in Thermal Characteristics table), p. 1<br>•<br>Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1<br>•<br>Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related<br>“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in<br>Capable Plastic Package bullet, p. 1<br>•<br>Corrected VDSto VDDin the RF test condition voltage callout for VGS(Q)and added “Measured in Functional<br>Test”, On Characteristics table, p. 2<br>•<br>Corrected Cisstest condition to indicate AC stimulus on the VGSconnection versus the VDSconnection,<br>Dynamic Characteristics table, p. 2<br>•<br>Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part<br>numbers, p. 3, 9<br>•<br>Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture<br>limitations, p. 6<br>•<br>Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2and listed<br>operating characteristics and location of MTTF calculator for device, p. 7<br>•<br>Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 13-15. Corrected cross hatch pattern in<br>bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed<br>from Min-Max .290-.320 to .290 Min; E3 changed from Min-Max .150-.180 to .150 Min). Added JEDEC<br>Standard Package Number.<br>•<br>Replaced Case Outline 1265A-02 with 1265A-03, Issue C, p. 1, 16-18. Corrected cross hatch pattern and<br>its dimensions (D2 and E2) on source contact (D2 changed from Min-Max .290-.320 to .290 Min; E3<br>changed from Min-Max .150-.180 to .150 Min). Added pin numbers. Corrected mm dimension L for<br>gull-wing foot from 4.90-5.06 Min-Max to 0.46-0.61 Min-Max. Added JEDEC Standard Package Number.<br>•<br>Added Product Documentation and Revision History, p. 19|
|5|June 2009|•<br>Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing<br>process as described in Product and Process Change Notification number, PCN13516, p. 2<br>•<br>Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to<br>Product Documentation, Application Notes, p. 19<br>•<br>Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 19|



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## **MW6S010NR1 MW6S010GNR1** 

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Document Number: MW6S010N 20Rev. 5, 6/2009