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MW6S004NT1
RF MOSFET, N CHANNEL, 68V, 466-03, FULL REEL
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NXP
- Product type: RF FETs
- No. of Pins: 4Pins
- Channel Type: N Channel
- RF Transistor Case: PLD-1.5
- Transistor Mounting: Surface Mount
- Transistor Case Style: PLD-1.5
- Operating Frequency Max: 2GHz
- Operating Frequency Min: 1MHz
- Drain Source Voltage Vds: 68V
- Operating Temperature Max: 150°C
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 10.56 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Document Number: MW6S004N Rev. 4, 6/2009
**Freescale Semiconductor** Technical Data
## **RF Power Field Effect Transistor**
## N-Channel Enhancement-Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
## **MW6S004NT1**
- Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP
Power Gain — 18 dB Drain Efficiency — 33% IMD — -34 dBc
**1-2000 MHz, 4 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET**
- Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain — 19 dB Drain Efficiency — 33% IMD — -39 dBc
- Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power
## **Features**
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- On-Chip RF Feedback for Broadband Stability
**CASE 466-03, STYLE 1 PLD 1.5 PLASTIC**
- Integrated ESD Protection
- RoHS Compliant
- In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
## **Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Drain-Source Voltage|VDSS|-0.5, +68|Vdc|
|Gate-Source Voltage|VGS|-0.5, +12|Vdc|
|Storage Temperature Range|Tstg|- 65 to +150|°C|
|Operating Junction Temperature|TJ|150|°C|
|**Table 2. Thermal Characteristics**||||
|**Characteristic**|**Symbol**|**Value (1,2)**|**Unit**|
|Thermal Resistance, Junction to Case|RθJC||°C/W|
|Case Temperature 76°C, 4 W PEP, Two-Tone||8.8||
|Case Temperature 79°C, 4 W CW||8.5||
## **Table 2. Thermal Characteristics**
## **Table 3. ESD Protection Characteristics**
|**Table 3. ESD Protection Characteristics**||
|---|---|
|**Test Methodology**|**Class**|
|Human Body Model (per JESD22-A114)|1C (Minimum)|
|Machine Model (per EIA/JESD22-A115)|A (Minimum)|
|Charge Device Model (per JESD22-C101)|IV (Minimum)|
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
2. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007, 2009. All rights reserved. **MW6S004NT1** ~~a 2* treescale’~~
**MW6S004NT1**
RF Device Data Freescale Semiconductor
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## **Table 4. Moisture Sensitivity Level**
|**Table 4. Moisture Sensitivity Level**|||
|---|---|---|
|**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**|**Unit**||
|Per JESD 22-A113, IPC/JEDEC J-STD-020<br>3<br>260|°C||
|**Table 5. Electrical Characteristics**(TA= 25°C unless otherwise noted)|||
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Off Characteristics**<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 68 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>μAdc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 28 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>μAdc<br>Gate-Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>500<br>nAdc<br>**On Characteristics**<br>Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 50 mAdc)<br>VGS(th)<br>1.2<br>2<br>2.7<br>Vdc<br>Gate Quiescent Voltage<br>(VDS= 28 Vdc, ID= 50 mAdc)<br>VGS(Q)<br>—<br>2.7<br>—<br>Vdc<br>Fixture Gate Quiescent Voltage(1)<br>(VDD= 28 Vdc, ID= 50 mAdc, Measured in Functional Test)<br>VGG(Q)<br>2.2<br>3<br>4.2<br>Vdc<br>Drain-Source On-Voltage<br>(VGS= 10 Vdc, ID= 50 mAdc)<br>VDS(on)<br>—<br>0.27<br>0.37<br>Vdc<br>~~—~~<br>~~EE~~<br>~~eee~~|||
|**Dynamic Characteristics**|||
|Reverse Transfer Capacitance<br>(VDS= 28 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Crss<br>—<br>21<br>—<br>pF<br>Output Capacitance<br>(VDS= 28 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Coss<br>—<br>25<br>—<br>pF<br>Input Capacitance<br>(VDS= 28 Vdc, VGS= 0 Vdc±30 mV(rms)ac @ 1 MHz)<br>Ciss<br>—<br>30<br>—<br>pF<br>~~EE~~|||
|**Functional Tests**(In Freescale Test Fixture, 50 ohm system) VDD= 28 Vdc, IDQ= 50 mA, Pout= 4 W PEP, f1 = 1960 MHz,|||
|f2 = 1960.1 MHz, Two-Tone Test|||
|Power Gain<br>Gps<br>16.5<br>18<br>20<br>dB<br>Drain Efficiency<br>ηD<br>28<br>33<br>—<br>%<br>Intermodulation Distortion<br>IMD<br>—<br>-34<br>-28<br>dBc<br>Input Return Loss<br>IRL<br>—<br>-12<br>-10<br>dB<br>~~Sea~~|||
|**Typical Performance**(In Freescale 900 MHz Demo Board, 50 ohm system) VDD= 28 Vdc, IDQ= 50 mA, Pout= 4 W PEP,|||
|f = 900 MHz, Two-Tone Test, 100 kHz Tone Spacing|||
|Power Gain<br>Gps<br>—<br>19<br>—<br>dB<br>Drain Efficiency<br>ηD<br>—<br>33<br>—<br>%<br>Intermodulation Distortion<br>IMD<br>—<br>-39<br>—<br>dBc<br>Input Return Loss<br>IRL<br>—<br>-12<br>—<br>dB<br>~~EE~~|||
|1. VGG=11/10x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.|||
|Refer to Test Circuit Schematic.|||
**MW6S004NT1**
RF Device Data Freescale Semiconductor
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**Figure 1. MW6S004NT1 Test Circuit Schematic**
**Table 6. MW6S004NT1 Test Circuit Component Designations and Values**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1|100 nF Chip Capacitor|CDR33BX104AKYS|Kemet|
|C2, C3, C6, C7|9.1 pF Chip Capacitors|ATC100B9R1CT500XT|ATC|
|C4, C5|10μF, 50 V ChipCapacitors|GRM55DR61H106KA88B|Murata|
|C8|10μF, 35 V Tantalum Chip Capacitor|T490D106K035AT|Kemet|
|R1|1 kΩ, 1/4 W Chip Resistor|CRCW12061001FKEA|Vishay|
|R2|10 kΩ, 1/4 W Chip Resistor|CRCW12061002FKEA|Vishay|
|R3|10Ω, 1/4 W ChipResistor|CRCW120610R0FKEA|Vishay|
**MW6S004NT1**
RF Device Data Freescale Semiconductor
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**Figure 2. MW6S004NT1 Test Circuit Component Layout**
**MW6S004NT1**
RF Device Data Freescale Semiconductor
4
**TYPICAL CHARACTERISTICS**
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18.4 34<br>18.2 ae 33<br>η D<br>18 — a~ e 32<br>17.8 S N 31<br>17.6 _— Gps 30<br>17.417.2 _a= VIDQDD = 50 mA, 100 kHz Tone Spacing = 28 Vdc, Pout = 2 W (Avg.) — −30−31 −8−12<br>17 IRL −32 −16<br>16.8 a ee −33 −20<br>16.6 −34 −24<br>IM3<br>16.4 c e −35 −28<br>ee<br>1930 1940 1950 1960 1970 1980 1990<br>f, FREQUENCY (MHz)<br>Figure 3. Two-Tone Wideband Performance<br>@ Pout = 2 Watts Avg.<br>20 −10<br>IDQ = 75 mA VDD = 28 Vdc, IDQ = 50 mA<br>−20 f1 = 1960 MHz, f2 = 1960.1 MHz<br>19<br>Two−Tone Measurements<br>62.5 mA<br>ere II ELT −30 pL<br>18 i i ANE EA<br>50 mA<br>T n −40 LE<br>17<br>37.5 mA 3rd Order<br>−50<br>16 = i TL<br>−60<br>25 mA 5th Order<br>15 ea itl <— VDD = 28 Vdc AN),in a I n im Aaeeseme<br>f1 = 1960 MHz, f2 = 1960.1 MHz −70<br>Two−Tone Measurements 7th Order<br>14 alll m eMh| −80 iiTd LTTnTTT<br>eee l l<br>0.01 0.1 1 10 20 0.01 0.1 1 10<br>Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP<br>Figure 4. Two-Tone Power Gain versus Figure 5. Intermodulation Distortion Products<br>Output Power versus Output Power<br>, DRAIN<br>D<br>η<br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>IM3 (dBc)<br>IRL, INPUT RETURN LOSS (dB)<br>, POWER GAIN (dB)<br>ps<br>G<br>IMD, INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br>
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−25 47<br>VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ = 50 mA P6dB = 38.73 dBm (7.465 W) Ideal<br>−30 (f1 + f2)/2 = Center Frequency of 1960 MHz 45<br>P3dB = 38.22 dBm (6.637 W)<br>−35 o yoytaril 43 Se re yy ayoi<br>3rd Order<br>−40 | tA 41 er<br> e i KEEN P1dB = 37.61 dBm (5.768 W) S e<br>−45 39<br>Al Se<br>Actual<br>−50 Sa 5th Order 37 ASN<br>eeemsrie al HE sea A<br>VDD = 28 Vdc, IDQ = 50 mA<br>−55 35 Pulsed CW, 8 μsec(on), 1 msec(off)<br>7th Order<br>f = 1960 MHz<br>−60 T T A 33 ar e<br>0.1 1 10 100 14 16 18 20 22 24 26<br>TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm)<br>Figure 6. Intermodulation Distortion Products Figure 7. Pulsed CW Output Power versus<br>versus Tone Spacing Input Power<br>, OUTPUT POWER (dBm)<br>out<br>P<br>IMD, INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br>
**MW6S004NT1**
RF Device Data Freescale Semiconductor
5
**TYPICAL CHARACTERISTICS**
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50 −20<br>VDD = 28 Vdc, IDQ = 50 mA<br>f = 1960 MHz, N−CDMA IS−95 (Pilot, Sync,<br>40 Paging, Traffic Codes 8 Through 13) −30<br>30 hil −40<br>20 CUT Gps Pill −50<br>TT<br>10 ACPR −60<br>T η D M<br>0 rT ATTIEa −70<br>0.01 0.1 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 8. Single-Carrier CDMA ACPR, Power Gain<br>and Drain Efficiency versus Output Power<br>20 60<br>−30 C<br>19 TC = −30 C Gps 50<br>Cr<br>25 C<br>85 C<br>18 40<br>TY 85 C<br>17 He SIAN 30<br>16 VDD = 28 Vdc 20<br>IDQ = 50 mA<br>f = 1960 MHz η D<br>15 an 10<br>MtLeen<br>14 eT EL 0<br>0.01 0.1 1 10<br>Pout, OUTPUT POWER (WATTS) CW<br>, POWER GAIN (dB)<br>ps ACPR (dB)<br>, DRAIN EFFICIENCY (%), G<br>D<br>η<br>, POWER GAIN (dB)<br>Gps DRAIN EFFICIENCY (%)D,<br>η<br>**----- End of picture text -----**<br>
**Figure 9. Power Gain and Drain Efficiency versus CW Output Power**
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19 22 0<br>18.5 ee IDQ = 50 mA<br>f = 1960 MHz<br>20 −5<br>18 R e<br>17.5 MS S SSV FF 18 | Ky! S21 OY) −10<br>17<br>O S 16 ay ee −15<br>16.5 FTA AN, ZK | TSN<br>16<br>14 VDD = 28 Vdc −20<br>15.5 or AY Pout = 2 W CW S11<br>VDD = 24 V 28 V 32 V IDQ = 50 mA<br>15 N NA 12 A Lf Stft −25<br>0 1 2 3 4 5 6 7 8 1800 1850 1900 1950 2000 2050 2100<br>Pout, OUTPUT POWER (WATTS) CW f, FREQUENCY (MHz)<br>S21 (dB) S11 (dB)<br>, POWER GAIN (dB)<br>ps<br>G<br>**----- End of picture text -----**<br>
**Figure 10. Power Gain versus Output Power**
**Figure 11. Broadband Frequency Response**
**MW6S004NT1**
RF Device Data Freescale Semiconductor
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## **TYPICAL CHARACTERISTICS**
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10 [7]<br>=== ====_—==———<br>ee<br>Pi {| KET T TT tT tt tT et te<br>10 [6] OPN<br>PN<br>10 [5]<br>SS<br>a<br>Pt [| | [| | | | | | [| | ft ft ft ft<br>10 [4] FEET TTT ETT Tey tty<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (°C)<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>
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This above graph displays calculated MTTF in hours when the device<br>is operated at VDD = 28 Vdc, Pout = 4 W PEP, and ηD = 33%.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>**----- End of picture text -----**<br>
**Figure 12. MTTF versus Junction Temperature**
**MW6S004NT1**
RF Device Data Freescale Semiconductor
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eLYs a|]<br>f = 1990 MHz<br>va/9f oo n See<br>Zload<br>Tet bd<br>Sf ii[2{Ts EY/§ sTREATPLPef RE a, Zo = 10 zs Ω ERLEPeeSeee ieeRo eSQ f = 1930 MHz XESS S SOES<br>VRRP ER BB a cectenecen<br>hctorengerntes<br>bi LEER EES. OSE:<br>o LER SSS<br>ef “/o Behl ty Lee rename TA LOLI DIRE LKR<br>i TEP IN LT LT) LT LRT QB<br>He/ef |I Afy 2ee e an e rnse RTL<br>hSesitenritfiar 2 mueeeseeaeetis ictS geaeeeatatedlae Be e<br>[2 efi[eee reeeuleriieeOR CONDUCeananreeTANCEBeausiiraweanCOMPONENT( Pat etal Hsieh<br>sts tsb LEE<br>ce | naar means LT CA<br>eric Hei eee =) MBeneetei emanate<br>e| | Be Deatecaertaey LI maetsest1 v\ peneSKSSS<br>ee<br>! (ee<br>OD SORT<br>3 8 Se<br> (Se<br>lect — = =]<br>“teS\a\ ERE3oo See<br>\c\2 \ aFasoe FAs nenssss Aveta e rORse SESSA A p e eranen e tnngS S RSSSoR R COATESaa,waeATH HECl<br>OW \ Vg (SSS<br>“\3\ \ f = 1990 MHz A<br>Zsource AT EEE A<br>VAS ee eae<br>AN SS S Soe ALITA<br>SSS f = 1930 MHz PT aaa<br>WAR one COREEAR ATEEA LS<br>RNAS LSS wefan LAD<br>ARSEWABERKBNCAwane,TT a HST+4 CLAS KS<br><0 ~ oan 06-<br>= we 3<br>VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP<br>f Zsource Zload<br>MHz<br>1930 1.96 - j5.34 8.78 + j6.96<br>1960 1.89 - j5.10 8.93 + j7.46<br>1990 1.82 - j4.85 9.11 + j7.97<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 13. Series Equivalent Source and Load Impedance**
**MW6S004NT1**
RF Device Data Freescale Semiconductor
8
## **Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system)**
|~~a~~|~~ee~~<br>~~ees ees~~|~~ee~~<br>~~ees ees~~|**IDQ = 50 mA**<br>~~ees ee~~|**IDQ = 50 mA**<br>~~ees ee~~|~~esee~~|~~esee~~|~~ee~~|~~ee~~|
|---|---|---|---|---|---|---|---|---|
|**f**<br>**MH**<br>**z**<br>~~a~~|**S11**<br>~~ee~~<br>~~ees ees~~||**S21**<br>~~ees ee~~||**S12**<br>~~esee~~||**S22**<br>~~ee~~||
||**|S11|**<br>~~ee~~|∠φ<br>~~ees ees~~|**|S21|**<br>~~ees ee~~|∠φ<br>~~ee~~|**|S12|**<br>~~es~~|∠φ<br>~~ee~~|**|S22|**<br>~~ee~~|∠φ<br>~~ee~~|
|500<br>~~a~~<br>~~a~~|0.649<br>~~ee~~<br>|-116.340<br>~~ees ees~~<br>|7.902<br>~~ees ee~~<br>|105.420<br>~~ee~~<br>|0.056<br>~~es ~~<br>|-73.750<br> ~~ee ~~<br>|0.548<br> ~~ee~~<br>|-33.570<br>~~ee~~<br>|
|550<br>~~aee~~|0.695<br>~~ee~~|-121.680<br>~~ee~~|7.502<br>~~ee~~|98.790<br>~~ee~~|0.053<br>~~ee~~|-80.570<br>~~ee~~|0.593<br>~~ee~~|-41.480<br>~~ee~~|
|600<br>~~a~~<br>~~a~~|0.733<br>|-126.560<br>|7.111<br>|92.380<br>|0.049<br>|-87.010<br><br>~~GO~~|0.632<br><br>~~GO~~|-48.890<br>|
|650<br>~~GG~~<br>~~a~~|0.770<br>~~GG~~|-131.340<br>~~GG~~|6.699<br>~~GG~~|86.290<br>~~GG~~|0.045<br>~~GG~~|-93.280<br>~~GG~~<br>~~GO~~|0.669<br>~~GG~~<br>~~GO~~|-56.000<br>~~GG~~|
|700<br>~~GG~~<br>~~a~~<br>~~a~~|0.800<br>~~GG~~<br>~~a~~<br>|-135.740<br>~~GG~~<br>|6.302<br>~~GG~~<br>|80.450<br>~~GG~~<br>|0.041<br>~~GG~~<br>|-99.120<br>~~GG~~<br>~~GO~~<br>~~GO~~|0.701<br>~~GG~~<br>~~GO~~<br>~~GO~~|-62.810<br>~~GG~~|
|750<br>~~GG~~<br>~~a~~|0.827<br>~~GG~~<br>|-140.030<br>~~GG~~<br>|5.922<br>~~GG~~<br>|74.850<br>~~GG~~<br>|0.038<br>~~GG~~<br>|-104.850<br>~~GG~~<br>~~GO~~|0.727<br>~~GG~~<br>~~GO~~|-69.290<br>~~GG~~|
|800<br>~~GG~~<br>~~aRe~~|0.848<br>~~GG~~<br>~~Re Ce~~|-143.950<br>~~GG~~<br>~~Ce~~|5.552<br>~~GG~~<br>~~GG~~|69.630<br>~~GG~~<br>~~GG~~|0.035<br>~~GG~~<br>~~GG~~|-110.110<br>~~GG~~<br>~~GO~~<br>~~CO~~|0.750<br>~~GG~~<br>~~GO~~<br>~~CO~~|-75.350<br>~~GG~~|
|850<br>~~Re~~<br>~~a~~|0.866<br>~~Re Ce~~|-147.690<br>~~Ce~~|5.220<br>~~GG~~|64.580<br>~~GG~~|0.032<br>~~GG~~|-115.220<br>~~CO~~|0.770<br>~~CO~~|-81.130|
|900<br>~~Re~~<br>~~a~~|0.882<br>~~Re Ce~~|-151.140<br>~~Ce ~~|4.891<br> ~~GG~~|59.970<br>~~GG~~|0.029<br>~~GG~~|-119.960<br>~~CO~~|0.786<br>~~CO~~|-86.570|
|950<br>~~a~~<br>~~a~~<br>~~a~~|0.895<br>|-154.560<br>|4.597<br>|55.490<br>|0.026<br>|-124.790<br><br>~~GO~~|0.800<br><br>~~GO~~|-91.730<br>|
|1000<br>~~OG~~<br>~~a~~|0.907<br>~~OG~~|-157.590<br>~~OG~~|4.315<br>~~OG~~|51.240<br>~~OG~~|0.024<br>~~OG~~|-129.090<br>~~OG~~<br>~~GO~~|0.813<br>~~OG~~<br>~~GO~~|-96.660<br>~~OG~~|
|1050<br>~~OG~~<br>~~a~~<br>~~a~~|0.916<br>~~OG~~<br>~~a~~<br>|-160.540<br>~~OG~~<br>|4.060<br>~~OG~~<br>|47.170<br>~~OG~~<br>|0.022<br>~~OG~~<br>|-133.370<br>~~OG~~<br>~~GO~~<br>~~GO~~|0.824<br>~~OG~~<br>~~GO~~<br>~~GO~~|-101.340<br>~~OG~~|
|1100<br>~~GG~~<br>~~a~~|0.923<br>~~GG~~<br>|-163.310<br>~~GG~~<br>|3.819<br>~~GG~~<br>|43.340<br>~~GG~~<br>|0.020<br>~~GG~~<br>|-137.460<br>~~GG~~<br>~~GO~~|0.833<br>~~GG~~<br>~~GO~~|-105.790<br>~~GG~~|
|1150<br>~~GG~~<br>~~aRe~~|0.929<br>~~GG~~<br>~~Re Ce~~|-165.930<br>~~GG~~<br>~~Ce~~|3.601<br>~~GG~~<br>~~GG~~|39.650<br>~~GG~~<br>~~GG~~|0.018<br>~~GG~~<br>~~GG~~|-141.440<br>~~GG~~<br>~~GO~~<br>~~CO~~|0.840<br>~~GG~~<br>~~GO~~<br>~~CO~~|-110.050<br>~~GG~~|
|1200<br>~~Re~~<br>~~a~~|0.935<br>~~Re Ce~~|-168.430<br>~~Ce~~|3.398<br>~~GG~~|36.110<br>~~GG~~|0.017<br>~~GG~~|-145.330<br>~~CO~~|0.847<br>~~CO~~|-114.170|
|1250<br>~~Re~~<br>~~a~~|0.938<br>~~Re Ce~~|-170.770<br>~~Ce ~~|3.210<br> ~~GG~~|32.740<br>~~GG~~|0.015<br>~~GG~~|-149.540<br>~~CO~~|0.851<br>~~CO~~|-118.060|
|1300<br>~~a~~<br>~~a~~<br>~~a~~|0.942<br><br>|-173.030<br><br>|3.036<br><br>|29.490<br><br>|0.014<br><br>|-153.430<br><br>~~GO~~<br>|0.856<br><br>~~GO~~<br>|-121.880<br><br>|
|1350<br>~~GG~~<br>~~a~~|0.945<br>~~GG~~<br>|-175.140<br>~~GG~~<br>|2.875<br>~~GG~~<br>|26.360<br>~~GG~~<br>|0.013<br>~~GG~~<br>|-157.460<br>~~GG~~<br>~~GO~~<br>|0.859<br>~~GG~~<br>~~GO~~<br>|-125.520<br>~~GG~~<br>|
|1400<br>~~GG~~<br>~~a~~<br>~~a~~|0.948<br>~~GG~~<br><br>|-177.170<br>~~GG~~<br><br>|2.728<br>~~GG~~<br><br>|23.330<br>~~GG~~<br><br>|0.012<br>~~GG~~<br><br>|-161.910<br>~~GG~~<br>~~GO~~<br><br>~~GO~~|0.863<br>~~GG~~<br>~~GO~~<br><br>~~GO~~|-129.020<br>~~GG~~<br>|
|1450<br>~~GG~~<br>~~a~~|0.951<br>~~GG~~<br>|-179.090<br>~~GG~~<br>|2.590<br>~~GG~~<br>|20.440<br>~~GG~~<br>|0.011<br>~~GG~~<br>|-166.180<br>~~GG~~<br>~~GO~~|0.866<br>~~GG~~<br>~~GO~~|-132.390<br>~~GG~~|
|1500<br>~~GG~~<br>~~aRe~~|0.953<br>~~GG~~<br>~~Re Ce~~|179.030<br>~~GG~~<br>~~Ce~~|2.464<br>~~GG~~<br>~~GG~~|17.640<br>~~GG~~<br>~~GG~~|0.010<br>~~GG~~<br>~~GG~~|-170.630<br>~~GG~~<br>~~GO~~<br>~~CO~~|0.869<br>~~GG~~<br>~~GO~~<br>~~CO~~|-135.650<br>~~GG~~|
|1550<br>~~Re~~<br>~~a~~|0.954<br>~~Re Ce~~|177.270<br>~~Ce~~|2.347<br>~~GG~~|14.920<br>~~GG~~|0.009<br>~~GG~~|-174.890<br>~~CO~~|0.872<br>~~CO~~|-138.760|
|1600<br>~~Re~~<br>~~a~~|0.955<br>~~Re Ce~~|175.570<br>~~Ce ~~|2.240<br> ~~GG~~|12.320<br>~~GG~~|0.008<br>~~GG~~|179.950<br>~~CO~~|0.875<br>~~CO~~|-141.750|
|1650<br>~~a~~<br>~~a~~<br>~~I~~|0.956<br><br>|173.980<br><br>|2.139<br><br>|9.740<br><br>|0.008<br><br>|173.920<br><br>~~GO~~<br>|0.877<br><br>~~GO~~<br>|-144.650<br><br>|
|1700<br>~~GG~~<br>~~I~~|0.957<br>~~GG~~<br>|172.350<br>~~GG~~<br>|2.047<br>~~GG~~<br>|7.250<br>~~GG~~<br>|0.007<br>~~GG~~<br>|167.710<br>~~GG~~<br>~~GO~~<br>|0.880<br>~~GG~~<br>~~GO~~<br>|-147.480<br>~~GG~~<br>|
|1750<br>~~GG~~<br>~~I~~<br>~~ee~~|0.957<br>~~GG~~<br><br>~~ee~~|170.800<br>~~GG~~<br>|1.958<br>~~GG~~<br>|4.810<br>~~GG~~<br>|0.007<br>~~GG~~<br>|161.810<br>~~GG~~<br>~~GO~~<br><br>~~GO~~|0.882<br>~~GG~~<br>~~GO~~<br><br>~~GO~~|-150.180<br>~~GG~~<br>|
|1800<br>~~eG~~<br>~~ee~~|0.958<br>~~eG~~<br>~~ee~~|169.340<br>~~eG~~|1.879<br>~~eG~~|2.440<br>~~eG~~|0.006<br>~~eG~~|155.370<br>~~eG~~<br>~~GO~~|0.884<br>~~eG~~<br>~~GO~~|-152.760<br>~~eG~~|
|1850<br>~~eG~~<br>~~ee~~<br>~~Re~~|0.959<br>~~eG~~<br>~~ee~~<br>~~Re Ce~~|167.920<br>~~eG~~<br>~~Ce~~|1.806<br>~~eG~~<br>~~GG~~|0.260<br>~~eG~~<br>~~GG~~|0.006<br>~~eG~~<br>~~GG~~|148.940<br>~~eG~~<br>~~GO~~<br>~~CO~~|0.886<br>~~eG~~<br>~~GO~~<br>~~CO~~|-155.230<br>~~eG~~|
|1900<br>~~ee~~<br>~~Re~~<br>~~a~~|0.959<br>~~ee~~<br>~~Re Ce~~|166.510<br>~~Ce~~|1.736<br>~~GG~~|-1.980<br>~~GG~~|0.005<br>~~GG~~|142.630<br>~~GO~~<br>~~CO~~|0.887<br>~~GO~~<br>~~CO~~|-157.580|
|1950<br>~~Re~~<br>~~a~~|0.960<br>~~Re Ce~~|165.200<br>~~Ce ~~|1.668<br> ~~GG~~|-4.310<br>~~GG~~|0.005<br>~~GG~~|136.740<br>~~CO~~|0.888<br>~~CO~~|-160.050|
|2000<br>~~a~~<br>~~a~~<br>~~a~~|0.959<br><br>|163.800<br><br>|1.611<br><br>|-6.240<br><br>|0.005<br><br>|129.910<br><br>~~GO~~<br>|0.890<br><br>~~GO~~<br>|-162.070<br><br>|
|2050<br>~~GG~~<br>~~a~~|0.959<br>~~GG~~<br>|162.420<br>~~GG~~<br>|1.555<br>~~GG~~<br>|-8.290<br>~~GG~~<br>|0.005<br>~~GG~~<br>|123.810<br>~~GG~~<br>~~GO~~<br>|0.891<br>~~GG~~<br>~~GO~~<br>|-164.190<br>~~GG~~<br>|
|2100<br>~~GG~~<br>~~a~~<br>~~a~~|0.958<br>~~GG~~<br><br>|161.170<br>~~GG~~<br><br>|1.504<br>~~GG~~<br><br>|-10.270<br>~~GG~~<br><br>|0.005<br>~~GG~~<br><br>|118.200<br>~~GG~~<br>~~GO~~<br><br>~~GO~~|0.892<br>~~GG~~<br>~~GO~~<br><br>~~GO~~|-166.140<br>~~GG~~<br>|
|2150<br>~~GG~~<br>~~a~~|0.958<br>~~GG~~<br>|159.840<br>~~GG~~<br>|1.456<br>~~GG~~<br>|-12.210<br>~~GG~~<br>|0.005<br>~~GG~~<br>|112.740<br>~~GG~~<br>~~GO~~|0.893<br>~~GG~~<br>~~GO~~|-168.060<br>~~GG~~|
|2200<br>~~GG~~<br>~~aRe~~|0.957<br>~~GG~~<br>~~Re Ce~~|158.560<br>~~GG~~<br>~~Ce~~|1.412<br>~~GG~~<br>~~GG~~|-14.130<br>~~GG~~<br>~~GG~~|0.005<br>~~GG~~<br>~~GG~~|108.460<br>~~GG~~<br>~~GO~~<br>~~CO~~|0.894<br>~~GG~~<br>~~GO~~<br>~~CO~~|-169.840<br>~~GG~~|
|2250<br>~~Re~~<br>~~a~~|0.957<br>~~Re Ce~~|157.160<br>~~Ce~~|1.372<br>~~GG~~|-16.010<br>~~GG~~|0.005<br>~~GG~~|103.840<br>~~CO~~|0.896<br>~~CO~~|-171.610|
|2300<br>~~Re~~<br>~~a~~|0.955<br>~~Re Ce~~|155.870<br>~~Ce ~~|1.334<br> ~~GG~~|-17.870<br>~~GG~~|0.005<br>~~GG~~|99.310<br>~~CO~~|0.896<br>~~CO~~|-173.260|
|2350<br>~~a~~<br>~~a~~<br>~~a~~|0.954<br>|154.510<br>|1.300<br>|-19.700<br>|0.005<br>|95.360<br><br>~~GO~~|0.897<br><br>~~GO~~|-174.830<br>|
|2400<br>~~GG~~<br>~~a~~|0.953<br>~~GG~~|153.120<br>~~GG~~|1.268<br>~~GG~~|-21.510<br>~~GG~~|0.005<br>~~GG~~|91.030<br>~~GG~~<br>~~GO~~|0.898<br>~~GG~~<br>~~GO~~|-176.390<br>~~GG~~|
|2450<br>~~GG~~<br>~~a~~|0.953<br>~~GG~~|151.730<br>~~GG~~|1.238<br>~~GG~~|-23.250<br>~~GG~~|0.005<br>~~GG~~|87.460<br>~~GG~~<br>~~GO~~|0.899<br>~~GG~~<br>~~GO~~|-177.840<br>~~GG~~|
**MW6S004NT1**
RF Device Data Freescale Semiconductor
9
## **Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) (continued)**
|~~ee~~|~~eeees~~|~~eeees~~|**IDQ = 50 mA**<br>~~ee ee~~|**IDQ = 50 mA**<br>~~ee ee~~|~~eesee~~|~~eesee~~|~~ee~~|~~ee~~|
|---|---|---|---|---|---|---|---|---|
|**f**<br>**MH**<br>**z**<br>~~ee~~|**S11**<br>~~eeees~~||**S21**<br>~~ee ee~~||**S12**<br>~~eesee~~||**S22**<br>~~ee~~||
||**|S11|**<br>~~ee~~|∠φ<br>~~ees~~|**|S21|**<br>~~ee ee~~|∠φ<br>~~ee~~|**|S12|**<br>~~ees~~|∠φ<br>~~ee~~|**|S22|**<br>~~ee~~|∠φ|
|2500<br>~~ee ~~<br>~~aee~~|0.952<br> ~~ee ~~<br>~~ee~~|150.340<br> ~~ees ~~|1.211<br> ~~ee ee~~|-25.120<br>~~ee~~|0.006<br>~~ees ~~|84.160<br> ~~ee ~~|0.899<br> ~~ee~~|-179.270|
|2550<br>~~aee~~|0.950<br>~~ee~~|149.010|1.187|-26.920|0.006|80.780|0.897|179.420|
|2600<br>~~ee~~<br>~~I~~<br>~~Pp~~|0.949<br>~~ee~~<br>|147.380<br>|1.166<br>|-28.650<br>|0.006<br>|77.880<br>|0.897<br>|178.120<br>|
|2650<br>~~Pp~~|0.948<br>|145.920<br>|1.144<br>|-30.420<br>|0.007<br>|74.670<br>|0.898<br>|176.840<br>|
|2700<br>~~Ppa~~|0.944<br>|144.200<br>|1.121<br>|-32.310<br>|0.007<br>|71.360<br>|0.896<br>|175.480<br>|
|2750<br>~~PE~~|0.944<br>~~PE~~|142.790<br>~~PE~~|1.105<br>~~PE~~|-34.230<br>~~PE~~|0.007<br>~~PE~~|67.980<br>~~PE~~|0.897<br>~~PE~~|174.060<br>~~PE~~|
|2800<br>~~PE~~<br>~~a~~<br>~~po~~|0.943<br>~~PE~~|141.020<br>~~PE~~|1.088<br>~~PE~~|-36.000<br>~~PE~~|0.007<br>~~PE~~|63.950<br>~~PE~~|0.897<br>~~PE~~|172.930<br>~~PE~~|
|2850<br>~~po~~|0.941|139.410|1.073|-37.870|0.007|61.230|0.896|171.630|
|2900<br>~~po~~<br>~~ee~~|0.940<br>~~ee~~|137.640|1.058|-39.760|0.008|59.810|0.896|170.330|
|2950<br>~~a~~|0.938|135.900|1.045|-41.680|0.008|58.280|0.896|169.040|
|3000<br>~~a~~|0.937|133.860|1.032|-43.610|0.008|56.740|0.895|167.510|
**MW6S004NT1**
RF Device Data Freescale Semiconductor
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**==> picture [465 x 383] intentionally omitted <==**
**----- Start of picture text -----**<br>
PACKAGE DIMENSIONS<br>A<br>F<br>3<br>B D 1 2 R L<br>NOTES:<br>1. INTERPRET DIMENSIONS AND TOLERANCES<br>PER ASME Y14.5M, 1984.<br>2. CONTROLLING DIMENSION: INCH<br>3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,<br>4 AND X.<br>N INCHES MILLIMETERS<br>K 0.35 (0.89) X 45 5 DIM MIN MAX MIN MAX<br>A 0.255 0.265 6.48 6.73<br>ao Q 10 DRAFT B 0.225 0.235 5.72 5.97<br>U C 0.065 0.072 1.65 1.83<br>D 0.130 0.150 3.30 3.81<br>ZONE V H P E 0.021 0.026 0.53 0.66<br>F 0.026 0.044 0.66 1.12<br>4<br>C G 0.050 0.070 1.27 1.78<br>Y Y E H 0.045 0.063 1.14 1.60<br>ÉÉ ÉÉ ÉÉ J 0.160 0.180 4.06 4.57<br>K 0.273 0.285 6.93 7.24<br>ZONE W ÉÉ ÉÉ ÉÉ L 0.245 0.255 6.22 6.48<br>1 2 N 0.230 0.240 5.84 6.10<br>ÉÉ ÉÉ ÉÉ P 0.000 0.008 0.00 0.20<br>Q 0.055 0.063 1.40 1.60<br>ÉÉ ÉÉ ÉÉ STYLE 1: R 0.200 0.210 5.08 5.33<br>PIN 1. DRAIN S 0.006 0.012 0.15 0.31<br>ÉÉ É 3 É ÉÉ 2. 3. GATESOURCE ZONE VU 0.0060.000 0.0120.021 0.150.00 0.310.53<br>S 4. SOURCE ZONE W 0.000 0.010 0.00 0.25<br>a G ZONE X a ZONE X 0.000 0.010 0.00 0.25<br>VIEW Y-Y CASE 466-03<br>ISSUE D<br>PLD 1.5<br>PLASTIC<br>**----- End of picture text -----**<br>
**MW6S004NT1**
RF Device Data Freescale Semiconductor
11
## **PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE**
Refer to the following documents to aid your design process.
## **Application Notes**
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
## **REVISION HISTORY**
The following table summarizes revisions to this document.
|**Revision**|**Date**|**Description**|
|---|---|---|
|2|Feb. 2007|•<br>Corrected MSL Rating from 3 to 1 in Table 4, Moisture Sensitivity Level, p. 2<br>•<br>Updated VGS(th)and VGS(Q)to reflect tighter HV6 windows and added Fixture Gate Quiescent VGG(Q)to On<br>Characteristics table to account for test fixture resistor divider network, p. 2<br>•<br>Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part<br>numbers, p. 3<br>•<br>Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture<br>limitations, p. 6<br>•<br>Replaced Figure 12, MTTF versus Junction Temperature with updated graph. Removed Amps2and listed<br>operating characteristics and location of MTTF calculator for device, p. 7<br>•<br>Added Product Documentation and Revision History section, p. 12|
|3|Apr. 2009|•<br>Corrected ESD structures to reflect current testing results. Changed HBM from 1A to 1C and CDM from III<br>to IV, p. 1<br>•<br>Corrected Cisstest condition to indicate AC stimulus on the VGSconnection versus the VDSconnection,<br>Dynamic Characteristics table, p. 2<br>•<br>Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3<br>•<br>Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part<br>numbers, p. 3|
|4|June 2009|•<br>Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing<br>process as described in Product and Process Change Notification number, PCN13516, p. 2<br>•<br>Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,<br>Tools and Software, p. 12|
**MW6S004NT1**
RF Device Data Freescale Semiconductor
12
## _**How to Reach Us:**_
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Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007, 2009. All rights reserved.
**MW6S004NT1** ~~+" freescale”~~
RF Device DataDocument Number: MW6S004N Freescale SemiconductorRev. 4, 6/2009
13
Updated at February 9, 2023
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